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51. 发明申请

US20100188890A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20100188890A1
公开(公告)日：2010-07-29
申请号：US12665773
申请日：2008-06-16
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01L27/228
摘要： A magnetoresistance effect element includes: a magnetization free layer; a spacer layer provided adjacent to the magnetization free layer; a first magnetization fixed layer provided adjacent to the spacer layer on a side opposite to the magnetization free layer; and at least two second magnetization fixed layers provided adjacent to the magnetization free layer. The magnetization free layer, the first magnetization fixed layer, and the second magnetization free layers respectively have magnetization components in a direction substantially perpendicular to film surfaces thereof. The magnetization free layer includes: two magnetization fixed portions; and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetizations of the two magnetization fixed portions constituting the magnetization free layer are fixed substantially antiparallel to each other in directions substantially perpendicular to the film surface. The domain wall motion portion is provided with magnetic anisotropy in a direction perpendicular to the film surface.
摘要翻译：磁阻效应元件包括：无磁化层; 邻近无磁化层设置的间隔层; 在与所述磁化自由层相反的一侧与所述间隔层相邻设置的第一磁化固定层; 以及与无磁化层相邻设置的至少两个第二磁化固定层。磁化自由层，第一磁化固定层和第二磁化自由层分别在基本垂直于其膜表面的方向上具有磁化分量。无磁化层包括：两个磁化固定部分; 以及布置在两个磁化固定部分之间的畴壁运动部分。构成无磁化层的两个磁化固定部分的磁化在基本上垂直于膜表面的方向上彼此基本上反平行地固定。畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。

52. 发明授权

US09799822B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09799822B2
公开(公告)日：2017-10-24
申请号：US14118093
申请日：2012-04-19
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
IPC分类号： H01L29/82 , H01L43/02 , H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08
摘要： A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

53. 发明授权

US09083336B2 Non-volatile logic operation device 有权
标题翻译：非易失性逻辑运算器件
公开(公告)号：US09083336B2
公开(公告)日：2015-07-14
申请号：US13996522
申请日：2012-01-05
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： H01L25/00 , G11C11/00 , H03K19/16 , H01L43/08 , H03K19/177
CPC分类号： H03K19/16 , H01L43/08 , H03K19/17724 , H03K19/17728
摘要： A non-volatile logic operation device includes an operation unit that is connected to a first input terminal, a second input terminal, and an output terminal, includes an operation layer, a first non-magnetic layer, and a reference layer, and outputs from the output terminal a result of a logic operation on signals applied at the first input terminal and the second input terminal, and a control unit that is connected to a third input terminal, and includes a control layer. The control unit is arranged in the vicinity of the operation unit.
摘要翻译：非易失性逻辑运算装置包括连接到第一输入端，第二输入端和输出端的操作单元，包括操作层，第一非磁性层和参考层，并从所述输出端子对在所述第一输入端子和所述第二输入端子处施加的信号进行逻辑运算的结果，以及连接到第三输入端子的控制单元，并且包括控制层。控制单元布置在操作单元的附近。

54. 发明申请

US20130285700A1 NON-VOLATILE LOGIC OPERATION DEVICE 有权
标题翻译：非易失性逻辑操作装置
公开(公告)号：US20130285700A1
公开(公告)日：2013-10-31
申请号：US13996522
申请日：2012-01-05
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： H03K19/16
CPC分类号： H03K19/16 , H01L43/08 , H03K19/17724 , H03K19/17728
摘要： A non-volatile logic operation device includes an operation unit that is connected to a first input terminal, a second input terminal, and an output terminal, includes an operation layer, a first non-magnetic layer, and a reference layer, and outputs from the output terminal a result of a logic operation on signals applied at the first input terminal and the second input terminal, and a control unit that is connected to a third input terminal, and includes a control layer. The control unit is arranged in the vicinity of the operation unit.
摘要翻译：非易失性逻辑运算装置包括连接到第一输入端，第二输入端和输出端的操作单元，包括操作层，第一非磁性层和参考层，并从所述输出端子对在所述第一输入端子和所述第二输入端子处施加的信号进行逻辑运算的结果，以及连接到第三输入端子的控制单元，并且包括控制层。控制单元布置在操作单元的附近。

55. 发明授权

US08416611B2 Magnetoresistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08416611B2
公开(公告)日：2013-04-09
申请号：US12665773
申请日：2008-06-16
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： G11C11/00 , G11C11/14 , H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01L27/228
摘要： A magnetoresistance effect element includes: a magnetization free layer; a spacer layer provided adjacent to the magnetization free layer; a first magnetization fixed layer provided adjacent to the spacer layer on a side opposite to the magnetization free layer; and at least two second magnetization fixed layers provided adjacent to the magnetization free layer. The magnetization free layer, the first magnetization fixed layer, and the second magnetization free layers respectively have magnetization components in a direction substantially perpendicular to film surfaces thereof. The magnetization free layer includes: two magnetization fixed portions; and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetizations of the two magnetization fixed portions constituting the magnetization free layer are fixed substantially antiparallel to each other in directions substantially perpendicular to the film surface. The domain wall motion portion is provided with magnetic anisotropy in a direction perpendicular to the film surface.
摘要翻译：磁阻效应元件包括：无磁化层; 邻近无磁化层设置的间隔层; 在与所述磁化自由层相反的一侧与所述间隔层相邻设置的第一磁化固定层; 以及与无磁化层相邻设置的至少两个第二磁化固定层。磁化自由层，第一磁化固定层和第二磁化自由层分别在基本垂直于其膜表面的方向上具有磁化分量。无磁化层包括：两个磁化固定部分; 以及布置在两个磁化固定部分之间的畴壁运动部分。构成无磁化层的两个磁化固定部分的磁化在基本上垂直于膜表面的方向上彼此基本上反平行地固定。畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。

56. 发明授权

US07848137B2 MRAM and data read/write method for MRAM 有权
标题翻译： MRAM和MRAM的数据读/写方法
公开(公告)号：US07848137B2
公开(公告)日：2010-12-07
申请号：US12294397
申请日：2007-03-20
申请人： Shunsuke Fukami , Naoki Kasai
发明人： Shunsuke Fukami , Naoki Kasai
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： An MRAM according to the present invention is provided with a magnetic recording layer being a ferromagnetic layer and a pinned layer connected to the magnetic recording layer through a nonmagnetic layer. The magnetic recording layer includes a magnetization switching region, a first magnetization fixed region and a second magnetization fixed region. The magnetization switching region has reversible magnetization and overlaps with the pinned layer. The first magnetization fixed region and the second magnetization fixed region are both connected to the same one end of the magnetization switching region. Also, the first magnetization fixed region and the second magnetization fixed region respectively have first fixed magnetization and second fixed magnetization whose directions are fixed. One of the first fixed magnetization and the second fixed magnetization is fixed in a direction toward the above-mentioned one end, and the other is fixed in a direction away from the above-mentioned one end.
摘要翻译：根据本发明的MRAM具有铁磁层的磁记录层和通过非磁性层连接到磁记录层的钉扎层。磁记录层包括磁化切换区，第一磁化固定区和第二磁化固定区。磁化开关区具有可逆磁化并与被钉扎层重叠。第一磁化固定区域和第二磁化固定区域都连接到磁化转换区域的相同的一端。此外，第一磁化固定区域和第二磁化固定区域分别具有固定方向的第一固定磁化强度和第二固定磁化强度。第一固定磁化和第二固定磁化中的一个固定在朝向上述一端的方向上，另一个固定在远离上述一端的方向上。

57. 发明申请

US20100091555A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20100091555A1
公开(公告)日：2010-04-15
申请号：US12526994
申请日：2008-01-10
申请人： Shunsuke Fukami
发明人： Shunsuke Fukami
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory has a laminating structure including: a magnetization free layer; an insulating layer; and a magnetization fixed layer. The magnetization free layer includes: a sense layer; a first bonding layer being adjacent to the sense layer; and a storage layer being adjacent to the first bonding layer on an opposite side to the sense layer. At least a part of the sense layer and the storage layer is magnetically coupled to one another through the first bonding layer. A magnetic anisotropy of the storage layer is larger than that of the sense layer. A product of a saturation magnetization and a volume of the sense layer is larger than that of the storage layer. According to such a structure, a magnetic random access memory can be provided in which a current for writing is reduced while enough thermal stability is maintained.
摘要翻译：磁性随机存取存储器具有层叠结构，包括：无磁化层; 绝缘层; 和磁化固定层。无磁化层包括：感应层; 与感应层相邻的第一结合层; 以及与感测层相反的一侧与第一结合层相邻的存储层。感测层和存储层的至少一部分通过第一粘合层彼此磁耦合。存储层的磁各向异性大于感应层的磁各向异性。感应层的饱和磁化强度和体积的乘积大于存储层的乘积。根据这样的结构，可以提供磁性随机存取存储器，其中在保持足够的热稳定性的同时降低写入电流。

58. 发明授权

US09105831B2 Nonvolatile magnetic element and nonvolatile magnetic device 有权
标题翻译：非易失磁性元件和非易失磁性元件
公开(公告)号：US09105831B2
公开(公告)日：2015-08-11
申请号：US14234547
申请日：2012-06-13
申请人： Shunsuke Fukami , Daichi Chiba
发明人： Shunsuke Fukami , Daichi Chiba
IPC分类号： H01L29/82 , H01L43/02 , H01L43/08 , H01L27/22 , G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/82 , H01L43/08
摘要： Provided is a nonvolatile magnetic device that is capable of realizing low power consumption by performing writing with a voltage and is also excellent in retention characteristics. The nonvolatile magnetic device includes a nonvolatile magnetic element. The nonvolatile magnetic element includes: a first free layer made of a ferromagnetic substance; a first insulating layer made of an insulator, the first insulating layer being provided to be connected to the first free layer; a charged layer provided adjacent to the first insulating layer; a second insulating layer made of an insulator, the second insulating layer being provided adjacent to the charged layer; and an injection layer provided adjacent to the second insulating layer. The charged layer is smaller in electric resistivity than both of the first insulating layer and the second insulating layer. The injection layer is smaller in electric resistivity than the second insulating layer.
摘要翻译：提供一种能够通过进行电压写入而实现低功耗并且保持特性也优异的非易失性磁性装置。非易失性磁性器件包括非易失性磁性元件。非挥发性磁性元件包括：由铁磁性物质制成的第一自由层; 由绝缘体制成的第一绝缘层，所述第一绝缘层设置成连接到所述第一自由层; 设置在所述第一绝缘层附近的带电层; 由绝缘体制成的第二绝缘层，所述第二绝缘层邻近所述带电层设置; 以及与第二绝缘层相邻设置的注入层。带电层的电阻率比第一绝缘层和第二绝缘层都要小。注入层的电阻率比第二绝缘层小。

59. 发明授权

US08023315B2 Magnetoresistive effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08023315B2
公开(公告)日：2011-09-20
申请号：US12526994
申请日：2008-01-10
申请人： Shunsuke Fukami
发明人： Shunsuke Fukami
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01L27/228 , H01L43/08
摘要： A magnetic random access memory has a laminating structure including: a magnetization free layer; an insulating layer; and a magnetization fixed layer. The magnetization free layer includes: a sense layer; a first bonding layer being adjacent to the sense layer; and a storage layer being adjacent to the first bonding layer on an opposite side to the sense layer. At least a part of the sense layer and the storage layer is magnetically coupled to one another through the first bonding layer. A magnetic anisotropy of the storage layer is larger than that of the sense layer. A product of a saturation magnetization and a volume of the sense layer is larger than that of the storage layer. According to such a structure, a magnetic random access memory can be provided in which a current for writing is reduced while enough thermal stability is maintained.
摘要翻译：磁性随机存取存储器具有层叠结构，包括：无磁化层; 绝缘层; 和磁化固定层。无磁化层包括：感应层; 与感应层相邻的第一结合层; 以及与感测层相反的一侧与第一结合层相邻的存储层。感测层和存储层的至少一部分通过第一粘合层彼此磁耦合。存储层的磁各向异性大于感应层的磁各向异性。感应层的饱和磁化强度和体积的乘积大于存储层的乘积。根据这样的结构，可以提供磁性随机存取存储器，其中在保持足够的热稳定性的同时降低写入电流。

60. 发明授权

US07936627B2 Magnetoresistance effect element and MRAM 有权
标题翻译：磁阻效应元件和MRAM
公开(公告)号：US07936627B2
公开(公告)日：2011-05-03
申请号：US12518532
申请日：2007-10-22
申请人： Shunsuke Fukami
发明人： Shunsuke Fukami
IPC分类号： G11C7/02
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C2213/74 , H01L43/08
摘要： A magnetoresistance effect element according to the present invention comprises a magnetization free layer 1 and a magnetization fixed layer 3 connected to the magnetization free layer 1 through a nonmagnetic layer 2. The magnetization free layer 1 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 having reversible magnetization overlaps with the magnetization fixed layer 3. The first magnetization fixed region 11 having first fixed magnetization is connected to one end 13a of the magnetization switching region 13. The second magnetization fixed region 12 having second fixed magnetization is connected to the other end 13b of the magnetization switching region 13. The first magnetization fixed region 11 and the magnetization switching region 13 form a three-way intersection, and the second magnetization fixed region 12 and the magnetization switching region 13 form another three-way intersection.
摘要翻译：根据本发明的磁阻效应元件包括通过非磁性层2连接到无磁化层1的无磁化层1和磁化固定层3。无磁化层1包括磁化转换区域13，第一磁化固定区域11和第二磁化固定区域12.具有可逆磁化的磁化开关区域13与磁化固定层3重叠。具有第一固定磁化强度的第一磁化固定区域11连接到磁化转换区域13的一端13a。具有第二固定磁化强度的第二磁化固定区域12连接到磁化转换区域13的另一端13b。第一磁化固定区域11和磁化开关区域13形成三路交叉，第二磁化固定区域12和磁化切换区域13形成另一个三通十字路口。

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