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51. 发明申请

US20100096632A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100096632A1
公开(公告)日：2010-04-22
申请号：US12578641
申请日：2009-10-14
申请人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
摘要翻译：形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。第一线层形成为覆盖第一接触孔。在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。在第二接触孔上形成第二线层。

52. 发明授权

US07456433B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07456433B2
公开(公告)日：2008-11-25
申请号：US11590882
申请日：2006-11-01
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上，由a-Si层或细颗粒结晶p-Si层构成的前体膜并且将植入物施加到前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

53. 发明申请

US20080142803A1 Display device and manufacturing method thereof 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20080142803A1
公开(公告)日：2008-06-19
申请号：US12000403
申请日：2007-12-12
申请人： Takuo Kaitoh , Eiji Oue
发明人： Takuo Kaitoh , Eiji Oue
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L27/1222 , H01L27/1296 , H01L29/04 , H01L29/458 , H01L29/78696
摘要： With the present invention, it is possible to provide a high quality image display by suppressing such faults as malfunction of a circuit or leakage of a current due to hump caused by the characteristic of a thin film transistor at a channel edge portion.An edge portion 302 of a polysilicon layer 301 functioning as a channel layer is converted into a noncrystalline or fine crystalline area. Because a silicon semiconductor film at the channel edge portion 302 is in the fine crystalline or noncrystalline state, a current flowing there is extremely small, or a current does not flow there. Thus, even when a threshold voltage Vth at a channel central portion is different from that at a channel edge portion, performance of the entire thin film transistor film is little affected, so that display faults due to hump are prevented.
摘要翻译：通过本发明，可以通过抑制电路的故障或由沟道边缘部分的薄膜晶体管的特性引起的由于隆起引起的电流的泄漏而提供高质量的图像显示。用作沟道层的多晶硅层301的边缘部分302被转换成非结晶或细晶体区域。由于沟道边缘部302处的硅半导体膜处于微细或非结晶状态，所以流过的电流极小，或者电流不流过。因此，即使在通道中心部分的阈值电压Vth与通道边缘部分的阈值电压Vth不同时，薄膜晶体管膜整体的性能也受到很小的影响，从而防止由于突起引起的显示故障。

54. 发明授权

US09128286B2 Display device and method for manufacturing the display device 有权
标题翻译：用于制造显示装置的显示装置和方法
公开(公告)号：US09128286B2
公开(公告)日：2015-09-08
申请号：US13429470
申请日：2012-03-26
申请人： Kouhei Takahashi , Takeshi Kuriyagawa , Daisuke Sonoda , Takuo Kaitoh , Katsumi Matsumoto
发明人： Kouhei Takahashi , Takeshi Kuriyagawa , Daisuke Sonoda , Takuo Kaitoh , Katsumi Matsumoto
IPC分类号： G02B26/02 , G09G3/34 , G02B26/08
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译：金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。因此，使孔板的前表面和后表面具有不同的反射率。在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。

55. 发明授权

US08970940B2 Display device and manufacturing method of the display device 有权
标题翻译：显示装置的显示装置及制造方法
公开(公告)号：US08970940B2
公开(公告)日：2015-03-03
申请号：US13526568
申请日：2012-06-19
申请人： Takuo Kaitoh , Takeshi Kuriyagawa , Ryou Sakata , Osamu Karikome , Timothy J. Brosnihan
发明人： Takuo Kaitoh , Takeshi Kuriyagawa , Ryou Sakata , Osamu Karikome , Timothy J. Brosnihan
IPC分类号： G02B26/00 , G02B26/08 , B81B7/00
CPC分类号： G02B26/0841 , B81B7/007 , B81B2201/045 , B81C2201/0132 , B81C2201/016
摘要： The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.
摘要翻译： MEMS快门包括具有开口部分的快门，连接到快门的第一弹簧，连接到第一弹簧的第一锚杆，连接到第二弹簧的第二弹簧和第二锚固件，在挡板的表面上的绝缘膜所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在垂直于基板表面的方向上，并且所述绝缘膜不存在于所述多个端子的表面上，并且所述表面所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在与所述基板的表面平行的方向上以及在面向所述基板的所述一侧的相对侧上。

56. 发明授权

US08110833B2 Display device with impurities formed within connection regions 有权
标题翻译：在连接区域内形成杂质的显示装置
公开(公告)号：US08110833B2
公开(公告)日：2012-02-07
申请号：US12536645
申请日：2009-08-06
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L21/336 , H01L33/00
CPC分类号： H01L29/78621 , H01L29/458
摘要： A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions.
摘要翻译：显示装置包括：透明基板; 层叠在透明基板上的栅电极; 叠层在栅电极上方并与栅电极一起构成薄膜晶体管的半导体膜; 源电极和漏极形成在半导体膜上方; 堆叠在源电极和半导体膜之间以及漏电极和半导体膜之间的绝缘膜; 以及形成在绝缘膜中的接触孔，以便将源电极和漏电极与半导体膜连接。半导体膜包括至少位于接触孔下方并与源电极连接的连接区域以及至少位于接触孔下方并与漏电极连接的连接区域，并将杂质注入连接区域。

57. 发明申请

US20110101357A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20110101357A1
公开(公告)日：2011-05-05
申请号：US12912799
申请日：2010-10-27
申请人： Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L33/16
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/78621 , H01L29/78627
摘要： A display device which uses a TFT having a gate electrode film thereof arranged on a light source side can also suppress the increase of parasitic capacitance while suppressing the generation of a light leakage current. On at least one end of the TFT, between a high concentration region which constitutes a source region or a drain region and a channel region, a first low concentration region which is arranged on a high concentration region side and exhibits low impurity concentration and a second low concentration region which exhibits impurity concentration even lower than the impurity concentration of the first low concentration region are provided in this order.
摘要翻译：使用其中设置在光源侧的具有栅电极膜的TFT的显示装置也可以抑制寄生电容的增加同时抑制漏光电流的产生。在TFT的至少一端，在构成源极区域或漏极区域的高浓度区域和沟道区域之间，配置在高浓度区域侧且显示低杂质浓度的第一低浓度区域和第二按照该顺序设置表现出比第一低浓度区域的杂质浓度更低的杂质浓度的低浓度区域。

58. 发明申请

US20100096645A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20100096645A1
公开(公告)日：2010-04-22
申请号：US12579428
申请日：2009-10-15
申请人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
发明人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.
摘要翻译：提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。

59. 发明申请

US20100032681A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100032681A1
公开(公告)日：2010-02-11
申请号：US12536645
申请日：2009-08-06
申请人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L29/78621 , H01L29/458
摘要： A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions.
摘要翻译：显示装置包括：透明基板; 层叠在透明基板上的栅电极; 叠层在栅电极上方并与栅电极一起构成薄膜晶体管的半导体膜; 源电极和漏极形成在半导体膜上方; 堆叠在源电极和半导体膜之间以及漏电极和半导体膜之间的绝缘膜; 以及形成在绝缘膜中的接触孔，以便将源电极和漏极连接到半导体膜。半导体膜包括至少位于接触孔下方并与源电极连接的连接区域以及至少位于接触孔下方并与漏电极连接的连接区域，并将杂质注入连接区域。

60. 发明申请

US20090061575A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090061575A1
公开(公告)日：2009-03-05
申请号：US12285997
申请日：2008-10-17
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L21/84
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

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