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51. 发明授权

US07369376B2 Amorphous layers in a magnetic tunnel junction device 失效
标题翻译：磁性隧道结装置中的非晶层
公开(公告)号：US07369376B2
公开(公告)日：2008-05-06
申请号：US11080867
申请日：2005-03-15
申请人： Yimin Guo , Tai Min , Po-Kang Wang
发明人： Yimin Guo , Tai Min , Po-Kang Wang
IPC分类号： G11B5/39
CPC分类号： G11C11/15
摘要： An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 Å). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.
摘要翻译：公开了一种改进的TMR装置。器件的铁磁层，特别是接触介电隧穿层的铁磁层具有无定形结构以及最小厚度（约15）。用于接触电介质层的优选材料是CoFeB。公开了克服与磁致伸缩相关的问题的方法，并且描述了用于制造该装置的方法。

52. 发明申请

US20070184561A1 Magnetic random access memory array with free layer locking mechanism and method of its use 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制及其使用方法
公开(公告)号：US20070184561A1
公开(公告)日：2007-08-09
申请号：US11732073
申请日：2007-04-02
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： H01L21/00
CPC分类号： G11C11/16
摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层它实际上并没有被选中，也提供了抗热搅拌的稳定性。

53. 发明申请

US20070171571A1 Side reading reduced GMR for high track density 失效
公开(公告)号：US20070171571A1
公开(公告)日：2007-07-26
申请号：US11716869
申请日：2007-03-12
申请人： Po Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Wang , Moris Dovek , Jibin Geng , Tai Min
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.

54. 发明申请

US20070164380A1 MRAM with split read-write cell structures 失效
标题翻译：具有分割读写单元结构的MRAM
公开(公告)号：US20070164380A1
公开(公告)日：2007-07-19
申请号：US11331998
申请日：2006-01-13
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： H01L43/00
CPC分类号： H01L27/228
摘要： An MRAM cell is formed in two separate portions. A first portion, that includes a pinned layer, a tunneling barrier layer and first free layer part, is used to read the value of a stored bit of information. A second portion includes a second free layer part on which information is written and stored. The second free layer part is formed with a high aspect ratio cross-section that renders it strongly magnetically anisotropic and enables it to couple to the relatively isotropic first free layer through a magnetostatic interaction. This interaction aligns the magnetization of the first free layer part in an opposite direction to the magnetization of the second free layer part. The magnetic orientation of the first free layer part relative to that of its adjacent pinned layer determines the resistance state of the first cell portion and this resistance state can be read by passing a current through the first cell portion. Thus, in effect, the first cell portion becomes a remote sensing device for the magnetization orientation of the second free layer part
摘要翻译： MRAM单元分成两部分形成。使用包括被钉扎层，隧道势垒层和第一自由层部分的第一部分来读取存储的信息位的值。第二部分包括其上写入和存储信息的第二自由层部分。第二自由层部分形成有高纵横比的横截面，其使得其具有强烈的磁性各向异性，并使其能够通过静磁相互作用耦合到相对各向同性的第一自由层。这种相互作用使第一自由层部分的磁化方向与第二自由层部分的磁化方向相反。第一自由层部分相对于其相邻被钉扎层的磁取向确定第一单元部分的电阻状态，并且可以通过使电流通过第一单元部分来读取该电阻状态。因此，实际上，第一单元部分成为用于第二自由层部分的磁化取向的遥感装置

55. 发明授权

US07242046B2 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling 失效
标题翻译：磁性随机存取存储器设计采用静磁耦合控制磁切换机构
公开(公告)号：US07242046B2
公开(公告)日：2007-07-10
申请号：US11167852
申请日：2005-06-27
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/16 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F41/308 , H01L43/08
摘要： A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to irregularities an structural defects.
摘要翻译：形成磁性随机存取存储器（MRAM）阵列的磁性隧道结（MTJ）存储单元作为静磁耦合段的链。片段可以是圆形，椭圆形，菱形形状或其他几何形状的形状。与在单元端和未补偿的极结构处呈现卷曲的典型MTJ设计的隔离单元不同，具有磁静态耦合的段的当前多段设计在受控成核位置通过扇形模式进行磁化切换。结果，本发明的多分段电池由于不规则性而不会因结构缺陷而变化。

56. 发明申请

US20070034919A1 MRAM with super-paramagnetic sensing layer 有权
标题翻译： MRAM具有超顺磁感应层
公开(公告)号：US20070034919A1
公开(公告)日：2007-02-15
申请号：US11200380
申请日：2005-08-09
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

57. 发明申请

US20060211155A1 Magnetic random access memory array with thin conduction electrical read and write lines 失效
标题翻译：磁性随机存取存储阵列，具有薄导通电读和写线
公开(公告)号：US20060211155A1
公开(公告)日：2006-09-21
申请号：US11438179
申请日：2006-05-22
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L21/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.
摘要翻译：在厚度小于100nm的高导电性材料的超薄正交字和位线之间形成MTJ MRAM单元。该厚度的线产生在无电荷层处的开关磁场，对于给定电流，其增强约两倍。因为这些线需要更薄的沉积，所以在图案化和抛光期间不需要通过CMP去除材料。因此，线和无细胞层之间存在均匀的间隔。

58. 发明授权

US07067330B2 Magnetic random access memory array with thin conduction electrical read and write lines 失效
公开(公告)号：US07067330B2
公开(公告)日：2006-06-27
申请号：US10892668
申请日：2004-07-16
申请人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
发明人： Tai Min , Pokang Wang , Xizeng Shi , Yimin Guo
IPC分类号： H01L21/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1659
摘要： An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

59. 发明授权

US07029941B2 Magnetic random access memory designs with controlled magnetic switching mechanism 失效
标题翻译：磁性随机存取存储器设计采用受控磁切换机制
公开(公告)号：US07029941B2
公开(公告)日：2006-04-18
申请号：US10647716
申请日：2003-08-25
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L21/00
CPC分类号： G11C11/16
摘要： An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform manner across the array.
摘要翻译： MRAM阵列由MTJ单元形成，其形状使得其在细胞中间具有最窄的尺寸。优选的实施方案将细胞形成为肾或花生的形状。这种形状为每个单元提供了最窄尺寸的人造成核位点，其中施加的切换场可以以跨过阵列的有效和均匀的方式切换单元的磁化。

60. 发明申请

US20060023492A1 Vortex magnetic random access memory 失效
标题翻译：涡流磁随机存取存储器
公开(公告)号：US20060023492A1
公开(公告)日：2006-02-02
申请号：US10900943
申请日：2004-07-28
申请人： Tai Min , Yimin Guo , Pokang Wang
发明人： Tai Min , Yimin Guo , Pokang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： An MTJ is disclosed in which the free layer and reference layer have a vortex magnetization state that is formed with a clockwise or counterclockwise rotation. The MTJ has a low aspect ratio elliptical shape and the magnetic layers have a dopant that is one of C, N, B, Zr, Ta, Pt, Nb, or Hf to facilitate the flux closure configuration. The vortex magnetization is induced by applying a reverse magnetic field in a direction opposite to the remnant magnetization in a magnetic layer. An anti-ferromagnetic layer is set in an AFM phase after the vortex state is induced in the adjacent reference layer. Switching the vortex state in the free layer involves applying a first field in a first direction to break the vortex and then applying a smaller second field in a reverse direction to a critical point where a vortex of opposite spin is induced.
摘要翻译：公开了一种MTJ，其中自由层和参考层具有形成有顺时针或逆时针旋转的涡流磁化状态。 MTJ具有低纵横比的椭圆形状，并且磁性层具有作为C，N，B，Zr，Ta，Pt，Nb或Hf之一的掺杂剂，以促进磁通闭合配置。通过在与磁性层中的残余磁化相反的方向上施加反向磁场来感应涡流磁化。在相邻参考层中引起涡流状态后，将反铁磁层设置在AFM相中。在自由层中切换涡流状态包括在第一方向上施加第一场以破坏涡流，然后沿相反方向施加相对方向的较小的第二场，该临界点引起相反旋转的漩涡。

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