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51. 发明申请

US20050157544A1 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy 有权
标题翻译：磁隧道结膜结构与工艺确定面内磁各向异性
公开(公告)号：US20050157544A1
公开(公告)日：2005-07-21
申请号：US10761003
申请日：2004-01-20
申请人： Tai Min , Cheng Horng , Po Wang
发明人： Tai Min , Cheng Horng , Po Wang
IPC分类号： H01L27/105 , G11C11/14 , G11C11/16 , H01L21/8246 , H01L27/22 , H01L31/062 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A method of forming an MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
摘要翻译：提供了形成MTJ存储器单元和/或这种单元阵列的方法，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁自由层具有磁性通过与形成在自由层上的薄的反铁磁层的磁耦合产生的各向异性。如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

52. 发明授权

US08755149B2 Shield designs with internal magnetization control for ATE improvement 有权
标题翻译：屏蔽设计具有内部磁化控制，可提高ATE
公开(公告)号：US08755149B2
公开(公告)日：2014-06-17
申请号：US13620764
申请日：2012-09-15
申请人： Suping Song , Lijie Guan , Tai Min , Yuhui Tang
发明人： Suping Song , Lijie Guan , Tai Min , Yuhui Tang
IPC分类号： G11B5/127
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A magnetic recording head is fabricated with a pole tip shielded laterally on its sides by a pair of symmetrically disposed side shields formed of porous heterogeneous material that contains non-magnetic inclusions. The non-magnetic inclusions, when properly incorporated within the magnetic matrix of the shields, promote the formation of flux loops within the shields that have portions that are parallel to the ABS and do not display locally disorganized and dynamic regions of flux during the creation of magnetic transitions within the recording medium by the magnetic pole. These flux loop portions, combine with the magnetic flux emerging from the main pole to create a net writing field that significantly reduces adjacent track erasures (ATE) and wide area erasures (WATE).
摘要翻译：制造磁记录头，其极侧通过由包含非磁性夹杂物的多孔异质材料形成的一对对称设置的侧屏蔽侧向屏蔽。当非磁性夹杂物适当地并入屏蔽体的磁矩阵中时，促进在屏蔽体内形成具有与ABS平行的部分的磁通环，并且在创建过程中不显示局部无组织和动态的磁通区域通过磁极在记录介质内的磁转变。这些磁通回路部分与从主极产生的磁通相结合，形成一个净写入场，显着地减少了相邻轨道擦除（ATE）和广域擦除（WATE）。

53. 发明授权

US08609262B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US08609262B2
公开(公告)日：2013-12-17
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , H01L43/08 , H01L29/82 , G01R33/09 , G11C11/16
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

54. 发明授权

US08498079B1 Superior performance head design with minimized ATE and WATE 有权
标题翻译：卓越的性能头设计，最小化ATE和WATE
公开(公告)号：US08498079B1
公开(公告)日：2013-07-30
申请号：US13620760
申请日：2012-09-15
申请人： Suping Song , Yuhui Tang , Tai Min , Lijie Guan
发明人： Suping Song , Yuhui Tang , Tai Min , Lijie Guan
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , G11B5/3163
摘要： A PMR writer is disclosed with an all wrap around design wherein the leading shield, side shields, and composite trailing shield are comprised of an anisotropic (−Ku) magnetic layer, and where the leading shield and side shields adjoin a gap layer. The composite shield has a first layer made of an isotropic magnetic material adjoining the write gap, and the anisotropic (−Ku) layer adjoins the first trailing shield layer on a side opposite the write gap. The main pole may have a tapered leading side and a tapered trailing side with the anisotropic (−Ku) leading shield and trailing shield layers extending a greater distance from the ABS than the ends of the tapered main pole sides. Adjacent track erasure is minimized while on-track write field and field gradient are improved.
摘要翻译：公开了一种全息环绕设计的PMR写入器，其中前屏蔽，侧屏蔽和复合拖尾屏蔽由各向异性（-Ku）磁性层组成，并且其中前屏蔽和侧屏蔽邻接间隙层。复合屏蔽具有由与写入间隙相邻的各向同性磁性材料制成的第一层，各向异性（-Ku）层与写入间隙相对的一侧与第一后屏蔽层相邻。主极可以具有锥形前缘和锥形后缘，各向异性（-Ku）前屏蔽和后屏蔽层比锥形主极侧的端部从ABS延伸更大的距离。相邻的磁道擦除最小化，同时提高了磁道写入场和磁场梯度。

55. 发明申请

US20080180865A1 CPP magnetic recording head with self-stabilizing vortex configuration 有权
标题翻译： CPP磁记录头具有自稳定涡流配置
公开(公告)号：US20080180865A1
公开(公告)日：2008-07-31
申请号：US12079470
申请日：2008-03-27
申请人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
发明人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996 , G11C11/16 , Y10T29/49043 , Y10T29/49048 , Y10T29/49053
摘要： A CPP MTJ or GMR read sensor is provided in which the free layer is self-stabilized by a magnetization in a circumferential vortex configuration. This magnetization permits the pinned layer to be magnetized in a direction parallel to the ABS plane, which thereby makes the pinned layer directionally more stable as well. The lack of lateral horizontal bias layers or in-stack biasing allows the formation of closely configured shields, thereby providing protection against side-reading. The vortex magnetization is accomplished by first magnetizing the free layer in a uniform vertical field, then applying a vertical current while the field is still present.
摘要翻译：提供了CPP MTJ或GMR读取传感器，其中自由层通过周向涡流构型中的磁化而自稳定。这种磁化允许钉扎层在平行于ABS平面的方向上被磁化，从而使钉扎层也更方向地更稳定。缺少横向水平偏置层或叠层偏压允许形成紧密配置的屏蔽，从而提供防止侧读的保护。涡流磁化是通过在均匀的垂直场中首先磁化自由层，然后在场仍然存在时施加垂直电流来实现的。

56. 发明授权

US07335961B2 Magnetic random access memory array with coupled soft adjacent magnetic layer 失效
标题翻译：具有耦合的软相邻磁性层的磁性随机存取存储器阵列
公开(公告)号：US07335961B2
公开(公告)日：2008-02-26
申请号：US11210637
申请日：2005-08-25
申请人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
发明人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.
摘要翻译：在正交字和位线之间形成MTJ元素。位线是在高导电率层下包括高导电性层和软磁性层的复合线。在操作期间，软磁性层集中了电流的磁场，并且由于其接近于自由层，它与MTJ中的自由层磁耦合。该耦合为自由层磁化提供了热稳定性，并且易于切换，并且可以通过在形成期间通过在自由层中引起形状或晶体各向异性而进一步增强耦合。

57. 发明申请

US20070171572A1 Side reading reduced GMR for high track density 失效
标题翻译：侧视读数降低了高磁轨密度的GMR
公开(公告)号：US20070171572A1
公开(公告)日：2007-07-26
申请号：US11716945
申请日：2007-03-12
申请人： Po Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Wang , Moris Dovek , Jibin Geng , Tai Min
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.
摘要翻译：随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。必须包括非磁性层以防止与硬偏置层的交换耦合。在至少一个实施例中，导电引线用于实现这一点。还描述了用于制造该装置的方法。

58. 发明申请

US20050047241A1 Magnetic random access memory designs with controlled magnetic switching mechanism 失效
标题翻译：磁性随机存取存储器设计采用受控磁切换机制
公开(公告)号：US20050047241A1
公开(公告)日：2005-03-03
申请号：US10647716
申请日：2003-08-25
申请人： Tai Min , Po Wang
发明人： Tai Min , Po Wang
IPC分类号： G11C11/15 , G11C11/16 , G11C7/00
CPC分类号： G11C11/16
摘要： An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform manner across the array.
摘要翻译： MRAM阵列由MTJ单元形成，其形状使得其在细胞中间具有最窄的尺寸。优选的实施方案将细胞形成为肾或花生的形状。这种形状为每个单元提供了最窄尺寸的人造成核位点，其中施加的切换场可以以跨过阵列的有效和均匀的方式切换单元的磁化。

59. 发明授权

US06185077B2 Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure 有权
标题翻译：具有反铁磁和静磁耦合钉扎结构的旋转阀传感器
公开(公告)号：US06185077B2
公开(公告)日：2001-02-06
申请号：US09227323
申请日：1999-01-06
申请人： Hua-Ching Tong , Tai Min , Jian-Gang Zhu , Chih-Huang Lai
发明人： Hua-Ching Tong , Tai Min , Jian-Gang Zhu , Chih-Huang Lai
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A stable pinned structure for a magnetoresistive sensor includes a pair of ferromagnetic layers sandwiched about an antiferromagnetic layer, the ferromagnetic layers having substantially opposite magnetic directions magnetostatically coupled and pinned by the antiferromagnetic layer. A free layer of ferromagnetic material has a magnetic direction that can rotate in the presence of an applied magnetic field so that the field can be sensed. A second free layer may be provided, such that the free layers are sandwiched about the pinned structure, with the sensor configured for amplifying signals and minimizing common mode noise.
摘要翻译：用于磁阻传感器的稳定的钉扎结构包括夹在反铁磁层之间的一对铁磁层，铁磁层具有基本相反的磁方向磁阻耦合并由反铁磁层固定。铁磁材料的自由层具有可以在施加的磁场的存在下旋转的磁方向，从而可以感测场。可以提供第二自由层，使得自由层围绕固定结构夹持，传感器被配置用于放大信号并最小化共模噪声。

60. 发明申请

US20130027809A1 HIGH DATA RATE MAGNETIC WRITER DESIGN 有权
标题翻译：高数据速率磁记录设计
公开(公告)号：US20130027809A1
公开(公告)日：2013-01-31
申请号：US13136182
申请日：2011-07-26
申请人： Tai Min , Lijie Guan , Min Li , Jiun-Ting Lee
发明人： Tai Min , Lijie Guan , Min Li , Jiun-Ting Lee
IPC分类号： G11B5/187 , C25D5/02
CPC分类号： C25D5/022 , G11B5/3116 , G11B5/3163
摘要： A high speed magnetic data writer containing a stitched pole tip that works in conjunction with the main pole is disclosed, together with a process for their manufacture. The material composition of each of these two sub-structures is slightly different; one sub-structure is optimized for high magnetic damping while the other sub-structure is optimized for high saturation magnetization.
摘要翻译：公开了一种包含与主极结合工作的缝合针尖的高速磁数据写入器及其制造方法。这两个子结构中的每一个的材料组成略有不同; 一个子结构被优化用于高磁阻尼，而另一个子结构被优化用于高饱和磁化强度。

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