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51. 发明授权

US07491656B2 Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film 有权
标题翻译：半导体装置，氧化硅膜的形成方法以及氧化硅膜的形成装置
公开(公告)号：US07491656B2
公开(公告)日：2009-02-17
申请号：US10943841
申请日：2004-09-20
申请人： Tadahiro Ohmi
发明人： Tadahiro Ohmi
IPC分类号： H01L21/31
CPC分类号： H01L27/1214 , H01L21/28194 , H01L21/28211 , H01L21/28238 , H01L29/4908 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.
摘要翻译：用作半导体器件的栅极绝缘膜的氧化硅膜（1701）包含Kr。因此，氧化硅膜（1701）中的应力和硅与氧化硅膜之间的界面处的应力被松弛，并且氧化硅膜即使在低温下形成也具有高质量。元件隔离区域的槽（凹部）的侧壁的硅上的氧化硅膜（1701）的厚度的均匀度为30％以下。因此，氧化硅膜（1701）的特性和可靠性优于硅热氧化膜，可以使元件隔离区域变小，从而实现优选适于SOI晶体管的高性能晶体管集成电路，一个TFT。

52. 发明申请

US20090023231A1 Semiconductor Device Manufacturing Method and Method for Reducing Microroughness of Semiconductor Surface 有权
标题翻译：半导体器件的制造方法和减少半导体表面微观粗糙度的方法
公开(公告)号：US20090023231A1
公开(公告)日：2009-01-22
申请号：US12223385
申请日：2007-01-30
申请人： Tadahiro Ohmi , Hitoshi Morinaga
发明人： Tadahiro Ohmi , Hitoshi Morinaga
IPC分类号： H01L21/66 , H01L21/306 , B08B7/00
CPC分类号： H01L21/02052 , H01L21/02074
摘要： Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.
摘要翻译：用液体进行表面处理，同时将半导体表面从光屏蔽。当在诸如清洁，蚀刻和半导体表面的显影的湿法中使用该方法进行表面处理时，可以降低表面微粗糙度的增加。因此，提高了半导体器件的电特性和产量。

53. 发明授权

US07472887B2 Valve for vacuum exhaustion system 有权
标题翻译：真空排气系统阀门
公开(公告)号：US07472887B2
公开(公告)日：2009-01-06
申请号：US10545672
申请日：2004-02-09
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamaji , Masafumi Kitano , Akihiro Morimoto
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamaji , Masafumi Kitano , Akihiro Morimoto
IPC分类号： F16K7/17
CPC分类号： F16K7/14 , F16K27/003 , F16K51/02
摘要： The present invention provides a valve which makes it possible to reduce the diameter of the vacuum exhaustion pipings for making the facility for the vacuum exhaustion system small, as a result lowering the costs, and making the vacuum exhaustion time short, and also which can prevent the corrosions, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of the gas.Specifically, the aluminum passivation is applied on the piping parts, i.e. the valve and others, used in the vacuum exhaustion system to inhibit the gas decomposition caused by the temperature rise at the time of the baking so that components for the reduction in the diameter size in the vacuum exhaustion system are provided. The corrosions, cloggings and seat leakages caused by the gas decomposition are prevented.
摘要翻译：本发明提供一种阀，其能够减小用于真空排气系统的设备的真空排气管的直径，结果是降低成本，并且使真空耗尽时间短，并且还可以防止由气体分解产生的物质的积聚引起的管道系统内的腐蚀，堵塞和密封泄漏。具体地说，在真空耗尽系统中使用的管道部件即阀门等上施加铝钝化，以抑制由烘烤时的温度升高引起的气体分解，从而减小直径尺寸的部件在真空耗尽系统中提供。防止气体分解引起的腐蚀，堵塞和座椅泄漏。

54. 发明申请

US20080302406A1 Solar Cell Panel 审中-公开
标题翻译：太阳能电池板
公开(公告)号：US20080302406A1
公开(公告)日：2008-12-11
申请号：US11631285
申请日：2005-06-24
申请人： Tadahiro Ohmi , Akihiro Morimoto , Kiwamu Takehisa
发明人： Tadahiro Ohmi , Akihiro Morimoto , Kiwamu Takehisa
IPC分类号： H01L31/042
CPC分类号： H01L31/055 , H01L31/02168 , Y02E10/52
摘要： Generally, solar cell panels are black, being inferior in design. An object of the invention is to provide a transparent plate which develops color without lowering power generation efficiency; and a solar cell panel which uses such transparent plate. A solar cell panel according to the invention has a construction such that the solar cell is covered by a transparent plate which is characterized by absorbing infrared light and emitting visible light. Since the transparent plate develops color by using infrared light which does not contribute to power generation, there is obtained a solar cell panel which is superior in the viewpoint of decoration without lowering the power generation efficiency of solar cells.
摘要翻译：一般来说，太阳能电池板是黑色的，设计差。本发明的目的是提供一种在不降低发电效率的情况下显色的透明板; 以及使用这种透明板的太阳能电池板。根据本发明的太阳能电池板具有太阳能电池被透明板覆盖的结构，其特征在于吸收红外光并发出可见光。由于通过使用对发电无贡献的红外线使透明板显色，所以获得了在不降低太阳能电池的发电效率的情况下在装饰的观点上优越的太阳能电池面板。

55. 发明申请

US20080224145A1 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof 有权
公开(公告)号：US20080224145A1
公开(公告)日：2008-09-18
申请号：US11907348
申请日：2007-10-11
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
IPC分类号： H01L29/04 , H01L29/788 , H01L29/78 , H01L27/12 , H01L21/316 , H01L21/762
CPC分类号： H01L21/28185 , G11C11/16 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/28291 , H01L27/11521 , H01L27/11585 , H01L27/1159 , H01L27/1203 , H01L29/045 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/7833 , H01L29/78603 , H01L29/78612 , H01L29/7883
摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

56. 发明申请

US20080189674A1 Data Generating Method, Data Generating Device, and Program 失效
标题翻译：数据生成方法，数据生成装置和程序
公开(公告)号：US20080189674A1
公开(公告)日：2008-08-07
申请号：US11887966
申请日：2006-04-07
申请人： Yoshiyuki Taniguchi , Tatsuo Morimoto , Akira Nakada , Masae Nakada , Tadahiro Ohmi
发明人： Yoshiyuki Taniguchi , Tatsuo Morimoto , Akira Nakada , Masae Nakada , Tadahiro Ohmi
IPC分类号： G06F17/50
CPC分类号： G03F7/70291 , G03F1/68 , G03F1/78 , G03F7/70508
摘要： To provide a data generating method, device, and program that can generate drawing data for drawing the entire general design graphic data with an accuracy of about 1 to 4 nm in a drawing method or a drawing system adapted to draw gradation-controllable spotlights in a two-dimensional array.The data generating method is a method for generating, in an exposure system having a function of irradiating multigradation-controllable spotlights in a two-dimensional array onto a photosensitive film on a substrate, gradation values of the spotlights based on design graphic data. Using reference data classified by features of a graphic and describing in advance combinations of gradation values mapped to coordinate information of a graphic, the method discriminates the feature in the design graphic data near positions of the spotlights and selects the combination of the gradation values in the reference data corresponding to coordinate information of the positions of the spotlights, thereby determining the gradation values.
摘要翻译：为了提供一种数据生成方法，装置和程序，其可以在绘制方法或绘制系统中生成绘制数据，以绘制整个一般设计图形数据，精度约为1至4nm，适于在二维数组。数据生成方法是在具有将二维阵列中的多光可控聚光灯照射到基板上的感光膜上的功能的曝光系统中产生的方法，其基于设计图形数据来生成聚光灯的灰度值。使用根据图形的特征分类的参考数据，并预先描绘映射到图形的坐标信息的灰度值的组合，该方法鉴别聚光灯的位置附近的设计图形数据中的特征，并且选择对应于聚光灯的位置的坐标信息的参考数据，从而确定灰度值。

57. 发明申请

US20080135954A1 Semiconductor device and method of producing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080135954A1
公开(公告)日：2008-06-12
申请号：US11812807
申请日：2007-06-21
申请人： Tadahiro Ohmi , Akinobu Teramoto , Koutaro Tanaka
发明人： Tadahiro Ohmi , Akinobu Teramoto , Koutaro Tanaka
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L29/7802 , H01J37/32192 , H01L21/049 , H01L29/1608 , H01L29/518 , H01L29/6606 , H01L29/66068
摘要： A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020 atoms/cm3 or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.
摘要翻译：通过降低SiC衬底上的栅极绝缘膜中的碳含量，获得具有小滞后和高耐电压性的膜。具体地，将栅极绝缘膜中的碳含量设定为1×10 20原子/ cm 3以下。为此，使用等离子体处理装置，在SiC衬底上形成氧化硅膜，然后通过暴露于含有氮原子的基团将形成的氧化硅膜重整。因此，获得了电性能优异的栅极绝缘膜。

58. 发明授权

US07334769B2 Resin molding machine and member for resin molding machine having film in passive state 失效
标题翻译：树脂成型机和树脂成型机的构件，其具有被动状态的膜
公开(公告)号：US07334769B2
公开(公告)日：2008-02-26
申请号：US10547696
申请日：2004-02-26
申请人： Tadahiro Ohmi , Masafumi Kitano , Naoki Tanahashi
发明人： Tadahiro Ohmi , Masafumi Kitano , Naoki Tanahashi
IPC分类号： B29D11/00
CPC分类号： B29C33/56 , B29C33/38 , B29C45/37 , B29L2031/3475 , C23C8/10 , C23C8/14 , C23C8/18 , C23C30/00 , Y10S425/808
摘要： A member for a resin molding machine wherein it has a face contacting with a molten resin, and at least a part of the face is covered with a film of an oxide of a base material of the face or a component contained in the base material. The use of the member in the molding of a resin allows the prevention of the incorporation of a contaminant associated with the deterioration of a melt of the resin into a molded article from the resin.
摘要翻译：树脂成形机的构件，其具有与熔融树脂接触的面，并且所述面的至少一部分被所述面的基材的氧化物或所述基材中所含的成分的膜覆盖。在树脂成型中使用该部件允许防止与树脂熔融物的劣化相关联的污染物与树脂混入模制品中。

59. 发明申请

US20080003441A1 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system 审中-公开
标题翻译：在其上形成有氧化铬钝化膜的金属材料及其制造方法，以及与流体和系统接触的部件
公开(公告)号：US20080003441A1
公开(公告)日：2008-01-03
申请号：US11878976
申请日：2007-07-30
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Nobukazu Ikeda , Eiji Ideta , Akihiro Morimoto , Tetsutaro Ogushi , Takehisa Konishi
IPC分类号： B32B15/04
CPC分类号： C23C8/02 , C23C26/00 , Y10T428/24322 , Y10T428/24355 , Y10T428/31678
摘要： The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 μm
摘要翻译：本发明的目的是在不含任何金属材料的其它金属的氧化物膜的情况下，形成耐腐蚀性优异的氧化铬膜。能够廉价且短时间地形成不含有其他金属的氧化物膜的耐腐蚀性优异的氧化铬钝化膜，能够提供安全的腐蚀性难以供给流体的流体供给系统。本发明包括以下步骤：在涂覆表面的表面粗糙度（Ra）不大于1.5μm的金属材料上涂覆铬之后，在氧化气氛中进行热处理，形成由氧化铬组成的钝化膜

60. 发明申请

US20070221623A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20070221623A1
公开(公告)日：2007-09-27
申请号：US11689180
申请日：2007-03-21
申请人： Takahiro HORIGUCHI , Masaki Hirayama , Tadahiro Ohmi
发明人： Takahiro HORIGUCHI , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B44C1/22 , C23C16/00 , C23F1/00 , H05H1/24
CPC分类号： H01J37/32568 , C23C16/45572 , C23C16/45574 , C23C16/511 , H01J37/32192 , H01J37/32211
摘要： There is provided a plasma processing apparatus in which a microwave is propagated into a dielectric body disposed at a top surface of a process chamber through a plurality of slots formed in a bottom face of a rectangular waveguide to excite a predetermined gas supplied into the process chamber into plasma by electric field energy of an electromagnetic field formed on a surface of the dielectric body, to thereby generate plasma with which a substrate is processed, wherein a top face member of the rectangular waveguide is formed of a conductive, nonmagnetic material and is disposed so as to be movable up and down relative to the bottom face of the rectangular waveguide. To change a wavelength in the rectangular waveguide, the top face member of the rectangular waveguide is moved up and down relative to the bottom face of the rectangular waveguide according to conditions of the plasma processing performed in the process chamber, such as gas species, pressure, and a power of the microwave of a microwave supplier.
摘要翻译：提供了一种等离子体处理装置，其中微波通过形成在矩形波导的底面中的多个槽传播到设置在处理室的顶表面处的电介质体中，以激发供应到处理室中的预定气体通过形成在电介质体的表面上的电磁场的电场能进入等离子体，从而产生用于处理基板的等离子体，其中矩形波导的顶面部件由导电非磁性材料形成，以相对于矩形波导的底面上下移动。为了改变矩形波导中的波长，根据处理室中进行的等离子体处理（例如气体种类，压力）的条件，矩形波导的顶面构件相对于矩形波导的底面上下移动，微波炉微波炉的功率。

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