专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明专利

JP2004233954A Resist pattern forming method and resist pattern 审中-公开
公开(公告)号：JP2004233954A
公开(公告)日：2004-08-19
申请号：JP2003151574
申请日：2003-05-28
申请人： Hitachi High-Technologies Corp , Hitachi Sci Syst Ltd , Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社 , 株式会社日立サイエンスシステムズ , 株式会社日立ハイテクノロジーズ
发明人： KUBOTA NAOTAKA , ISHIKAWA KIYOSHI , SATO MITSURU , MATSUMIYA YU , FUJII KAZUHIRO , SATO KENICHI
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32 , G03F7/40 , H01L21/027
CPC分类号： G03F7/32 , G03F7/0397 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To prevent fine resist patterns from falling in a drying process after development processing in forming the resist patterns.
SOLUTION: The method for forming the resist patterns comprises applying a positive type resist composition containing a resin component (A) which is

52. 发明专利

JP2004233953A Positive type resist composition 审中-公开
公开(公告)号：JP2004233953A
公开(公告)日：2004-08-19
申请号：JP2003151573
申请日：2003-05-28
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KUBOTA NAOTAKA , ISHIKAWA KIYOSHI , SATO MITSURU , MATSUMIYA YU
IPC分类号： G03F7/039 , G03F7/32 , G03F7/40 , H01L21/027
CPC分类号： G03F7/32 , G03F7/0397 , G03F7/325 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To prevent fine resist patterns from falling in a drying process after development processing in forming the resist patterns.
SOLUTION: The positive type resist composition is used in a resist pattern forming method including a process of substituting the liquid existing on a substrate after alkaline development with a liquid for critical drying, then drying the liquid for critical drying through a critical state. The composition contains a resin component (A) which is ≤20mol% in the content of alkaline solubility, has an acid dissociative dissolution suppressing group and is increased in the alkaline solubility by the effect of an acid, an acid forming agent component (B) which generates an acid by exposure and an organic solvent (C) which dissolves the components (A) and (B). The component (A) has (a1) a constitutional unit including the acid dissociative dissolution suppressing group, (a2) a constitutional unit including a lactone unit, and (a3) a constitutional unit including an alcoholic hydroxyl group-containing polycyclic group.
COPYRIGHT: (C)2004,JPO&NCIPI

53. 发明专利

JPH10228113A BASE MATERIAL FOR LITHOGRAPHY 失效
公开(公告)号：JPH10228113A
公开(公告)日：1998-08-25
申请号：JP34343697
申请日：1997-12-12
申请人： TOKYO OHKA KOGYO CO LTD
发明人： IGUCHI ETSUKO , SATO MITSURU
IPC分类号： G03F7/004 , C08F20/10 , C09D5/00 , C09D133/04 , G03F7/11 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a base material for lithography well controlling light reflected from a substrate, having satisfactory conformability and coating performance to a rugged substrate as well as superior antireflection effect, and hard to generate a sublimate. SOLUTION: This base material for lithography contains a crosslinking agent which is a nitrogen-contg. compd. having at least two amino groups with hydroxyalkyl and/or alkoxyalkyl substd. and a polymer or copolymer obtd. using ester of at least one of bisphenylsulfone and benzophenone each having at least one hydroxyl group with acrylic acid or methacrylic acid as at least part of monomers or further contains a highly light absorbing material.

54. 发明专利

JPH10189412A METHOD OF CLEANING BY ROTATION OF SUBSTRATE 失效
公开(公告)号：JPH10189412A
公开(公告)日：1998-07-21
申请号：JP34473996
申请日：1996-12-25
申请人： TOKYO OHKA KOGYO CO LTD
发明人： IGUCHI ETSUKO , SATO MITSURU
IPC分类号： H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To suppress generation of bubbles and so on in cleaning liquid by reducing a major rotating number in a certain degree and by making an accessing time long until reaching the major rotating number when the cleaning liquid remaining on a substrate having a resist pattern film of developing liquid is cleaned by rotation. SOLUTION: A substrate 2 of a semiconductor wafer and so on is set on a spinner 1 and a lower layer reflection preventing film 3 is formed on the surface of the substrate 2. A resist pattern film 4 which is formed by a chemical amplifying negative resist having a alkaline developing property is formed on the lower reflection preventing film 3 and development is performed by supplying developing liquid 5 on the resist pattern film 4. After completion of the steps cleaning liquid 6 is supplied on the resist pattern film 4, the developing liquid 5 is cleaned and the substrate 2 is also cleaned. In this case an accessing time until reaching a major rotation number of the substrate 2 at a low speed of 2500rpm is set more than one second. Therefore generation of bubbles and so on in the cleaning liquid 6 can be suppressed.

55. 发明专利

JPH10171109A NEGATIVE CHEMICALLY AMPLIFYING RESIST COMPOSITION 失效
公开(公告)号：JPH10171109A
公开(公告)日：1998-06-26
申请号：JP32978596
申请日：1996-12-10
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , ISHIKAWA KIYOSHI , SUGATA YOSHIKI , YAMAZAKI HIROYUKI , TACHIKAWA TOSHIKAZU , KOMANO HIROSHI
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain excellent sensitivity, resolution and heat resistance by using an alkali-soluble polyhydroxystyrene resin having specified mol.wt. and an acid crosslinking material as film forming components and combining a specified photoacid producing agent and a phenol compd. with these components. SOLUTION: This compsn. contains an alkali-soluble polyhydroxystyrene resin having >=2000 weight average mol.wt.(Mw), an acid crosslinking material, a photoacid producing agent expressed by formulae I to V, and a compd. having >=4 phenol type hydroxyl groups and , R are nonarmatic groups, R is an aromatic group, R is a lower alkyl group or halogenated lower alkyl group, A is a bivalent or tervalent org. group, R is a hydrocarbon group which may have substituents, R is an inert org. group, R is an aromatic polycyclic hydrocarbon group, R is a substd. or unsubstd. bivalent satd. hydrocarbon group, and R is a substd. or unsubstd. univalent satd. hydrocarbon group.

56. 发明专利

JPH09292715A PRIMARY COATING MATERIAL FOR LITHOGRAPHY AND RESIST MATERIAL FOR LITHOGRAPHY USING THE MATERIAL 失效
公开(公告)号：JPH09292715A
公开(公告)日：1997-11-11
申请号：JP10592196
申请日：1996-04-25
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , OMORI KATSUMI , IGUCHI ETSUKO , ISHIKAWA KIYOSHI , KANEKO FUMITAKE
IPC分类号： G03F7/11 , C09K3/00 , G03F7/09 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a primary coating material for lithography capable of sufficientrily suppressing the light reflected on a substrate, and forming an accurate resist pattern for the mask pattern without causing intermixing or notching, and having large selectivity ratio, by providing a primary coat layer between the substrate and a resist layer, and to provide a resist material for lithography using the material. SOLUTION: This primary coating material for lithography contains (A) a UV-absorbent selected from benzophenone compds. having at least one amino group or alkyl-substd. amino group and azomethine compds. and (B) a crosslinking agent selected from nitrogen-contg. compds. having at least two amino groups with substitution of hydroxyalkyl groups or alkoxyalkyl groups. The component (A) and (B) are included by 1:1 to 1:10 weight ratio. The resist material is obtd. by forming the base material above described on a substrate and then forming a radiation sensitive resist layer thereon.

57. 发明专利

JPH09138503A BASE FOR RESIST COATING SOLUTION, ITS PREPARATION AND NEGATIVE RESIST COMPOSITION USING THE SAME 失效
公开(公告)号：JPH09138503A
公开(公告)日：1997-05-27
申请号：JP29557195
申请日：1995-11-14
申请人： TOKYO OHKA KOGYO CO LTD
发明人： ISHIKAWA KIYOSHI , OMORI KATSUMI , SATO MITSURU , IGUCHI ETSUKO , KANEKO FUMITAKE , NAKAYAMA TOSHIMASA
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a chemical amplification type negative resist compsn. excellent in sensitivity and resist pattern shape and less liable to the deterioration of them with the lapse of time. SOLUTION: An alkali-soluble resin having phenolic hydroxyl groups or an alkali-insoluble resin obtd. by protecting part of the hydroxyl groups with substituents inert to an acid and 1-20wt.% tert. amine based on the amt. of the resin are heated and a soln. contg. the resultant material in an org. solvent is prepd. as the objective base for a resist coating soln. The objective resist compsn. contains the base, a compd. which generates an acid by irradiation of redioactive rays and a crosslinking agent.

58. 发明专利

JPH08262721A POSITIVE TYPE RESIST COMPOSITION 失效
公开(公告)号：JPH08262721A
公开(公告)日：1996-10-11
申请号：JP9444395
申请日：1995-03-28
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , NITTA KAZUYUKI , YAMAZAKI AKIYOSHI , IGUCHI ETSUKO , SAKAI TOMOAKI , SATO KAZUFUMI , NAKAYAMA TOSHIMASA
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PURPOSE: To obtain a positive type resist compsn. having high sensitivity, high resolution and high heat resistance, excellent in aging stability and capable of forming a resist pattern excellent in profile shape. CONSTITUTION: In this resist compsn. contg. a resin component whose solubility to an aq. alkali soln. is increased by the action of an acid, a compd. which produces an acid when irradiated and an org. carboxylic acid compd., the resin component is a mixture of polyhydroxystyrene having tert-butoxycarbonyloxy groups substd. for 10-6Omol% of hydroxyl groups with polyhydroxystyrene having residues represented by the formula (where R is H or methyl, R is methyl or ethyl and R is lower alkyl) and substd. for 10-60mol% of hydroxyl groups.

59. 发明专利

JPH03158855A POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION 失效
公开(公告)号：JPH03158855A
公开(公告)日：1991-07-08
申请号：JP29766189
申请日：1989-11-17
申请人： TOKYO OHKA KOGYO CO LTD
发明人： TOKUTAKE NOBUO , SATOU YOSHIYUKI , SATO KAZUFUMI , ANDO YASUTO , SATO MITSURU
IPC分类号： G03F7/004 , G03F7/022 , H01L21/027
摘要： PURPOSE:To obtain the positive type photoresist compsn. having an excellent sensitizing effect and extremely good preservable stability, image contrast and heat resistance by compounding alpha, alpha', alpha''-tris(4-hydroxyphenyl)-1, 3, 5-triisopropyl benzene into the compsn. contg. an alkaline-soluble novolak type resin and a quinone diazide group-contg. compd. CONSTITUTION:This compsn. is formed by compounding (c) the alpha, alpha', alpha''-tris(4- hydroxyphenyl)-1, 3, 5-triisopropyl benzene is compounded into the compsn. contg. (a) the alkaline-soluble novolak type resin and (b) the quinone diazide group-contg. compd. The photosensitive component consisting of the quinone diazide group-contg. compd. is preferably the complete esterified matter or partially esterified matter of, for example, polyhydroxybenzophenone, such as 2, 3, 4-trihydroxybenzophenone, and naphthoquinone-1, 2-diazide-5-sulfonic acid. The alpha, alpha', alpha''-tris(4-hydroxyphenyl)-1, 3, 5-triisopropyl benzene has the excellent sensitizing effect and has the effect of accelerating the dissolution of exposed parts at the time of development and conversely to suppress the dissolution of unexposed parts, and therefore, has the solution selectivity with a developing soln. The resist patterns having the excellent image contrast are thus formed.

60. 发明专利

JP2012078864A Positive resist composition 有权
标题翻译：积极抵抗组成
公开(公告)号：JP2012078864A
公开(公告)日：2012-04-19
申请号：JP2011284144
申请日：2011-12-26
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： HIRAYAMA HIROSHI , HANEDA HIDEO , FUJIMURA SATOSHI , IWAI TAKESHI , SATO MITSURU , TAKASU RYOICHI , TACHIKAWA TOSHIKAZU , IWASHITA ATSUSHI , ISHIZUKA KEITA , YAMADA TOMOTAKA , TAKAYAMA JUICHI , YOSHIDA MASAAKI
IPC分类号： G03F7/039 , G03F7/26 , C08F8/12 , C08F220/28 , G03F7/038 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition which is stable to a solvent used in an immersion lithography process and has excellent sensitivity and a resist pattern profile.SOLUTION: A positive resist composition comprises: a resin component (A) in which alkali solubility is increased by action of acid; an acid generator component (B) which generates the acid by exposure; an organic solvent (C) which dissolves the (A) component and the (B) component; and a nitrogen-containing organic compound (D). The resin component (A) has (a1) a constitutional unit derived from a (meth) acrylic acid ester having an acid-dissociable dissolution inhibiting group, (a2) a constitutional unit derived from the (meth) acrylic acid ester having a lactone unit, and (a4) a constitutional unit derived from the (meth) acrylic acid ester having a polycyclic group, but does not have (a0) (a0-1) a constitutional unit containing an anhydride of dicarboxylic acid and (a0-2) a constitutional unit containing a phenolic hydroxyl group.
摘要翻译：要解决的问题：提供一种对浸渍光刻工艺中使用的溶剂稳定的抗蚀剂组合物，并且具有优异的灵敏度和抗蚀剂图案轮廓。解决方案：正性抗蚀剂组合物包括：通过酸的作用使碱溶解度增加的树脂组分（A）通过曝光产生酸的酸发生剂组分（B）; 溶解（A）成分和（B）成分的有机溶剂（C）和含氮有机化合物（D）。树脂成分（A）具有（a1）来自具有酸解离性溶解抑制基的（甲基）丙烯酸酯的结构单元，（a2）来自具有内酯单元的（甲基）丙烯酸酯的结构单元，（a4）来自具有多环基的（甲基）丙烯酸酯的结构单元，但不具有（a0）（a0-1）含有二羧酸的酸酐的结构单元和（a0-2）a 含有酚羟基的结构单元。版权所有（C）2012，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式