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51. 发明授权

US08425016B2 Method of manufacturing a light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US08425016B2
公开(公告)日：2013-04-23
申请号：US13477096
申请日：2012-05-22
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： B41J2/17
CPC分类号： B41J2/17596 , B41J3/407 , H01L27/3211 , H01L27/3244 , H01L27/3281 , H01L27/3283 , H01L51/0005 , H01L51/56
摘要： A printing apparatus including an ink head having a pathway in which an ink in a liquid state is capable of flowing, the pathway being provided in the ink head and having a first end point and a second end point; a discharge port for discharging the ink, the discharge port being provided at the first end point; and a needle valve provided in the pathway and over the discharge port so that an outer surface of a needle portion of the needle valve is configured to be in contact with the ink.
摘要翻译：一种打印装置，包括具有液体状态的墨水能够流动的路径的墨头，该墨水通道设置在墨水头中并具有第一端点和第二端点; 用于排出墨的排出口，排出口设置在第一端点处; 以及设置在所述通路中并在所述排出口上方的针阀，使得所述针阀的针部的外表面与所述墨接触。

52. 发明授权

US08415231B2 Photovoltaic device and method for manufacturing the same 有权
标题翻译：光伏器件及其制造方法
公开(公告)号：US08415231B2
公开(公告)日：2013-04-09
申请号：US13213636
申请日：2011-08-19
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L31/18 , H01L31/0392 , H01L31/068 , Y02E10/547
摘要： A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.
摘要翻译：光电器件使用与单晶或多晶半导体衬底分离的单晶或多晶半导体层作为光电转换层，并具有其中半导体层与具有绝缘表面的衬底或绝缘衬底接合的SOI结构。作为单晶半导体基板的分离表面层部分并被转印的单晶半导体层被用作光电转换层，并且包括在光入射表面上或在相对的位置上添加氢或卤素的杂质半导体层表面。半导体层被固定到具有绝缘表面的基板或绝缘基板。

53. 发明授权

US08368083B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08368083B2
公开(公告)日：2013-02-05
申请号：US12700756
申请日：2010-02-05
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L31/0312
CPC分类号： H01L29/66068 , H01L21/76254 , H01L29/0696 , H01L29/0882 , H01L29/1608 , H01L29/165 , H01L29/7395 , H01L29/7802 , H01L29/7809 , H01L29/7824
摘要： At least part of a semiconductor layer or a semiconductor substrate includes a semiconductor region having a large energy gap. The semiconductor region having a large energy gap is preferably formed from silicon carbide and is provided in a position at least overlapping with a gate electrode provided with an insulating layer between the semiconductor region and the gate electrode. By making a structure in which the semiconductor region is included in a channel formation region, a dielectric breakdown voltage is improved.
摘要翻译：半导体层或半导体衬底的至少一部分包括具有大能隙的半导体区域。具有大能隙的半导体区域优选由碳化硅形成，并且设置在与半导体区域和栅电极之间设置有绝缘层的栅电极至少重叠的位置。通过形成半导体区域包括在沟道形成区域中的结构，提高了介电击穿电压。

54. 发明授权

US08322847B2 Liquid droplet ejection system and control program of ejection condition of compositions 有权
标题翻译：液滴喷射系统和组合物喷射条件控制程序
公开(公告)号：US08322847B2
公开(公告)日：2012-12-04
申请号：US13049078
申请日：2011-03-16
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Shinji Maekawa , Yohei Kanno
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Shinji Maekawa , Yohei Kanno
IPC分类号： B41J2/01 , B05B7/06 , H01L21/36
CPC分类号： H01L51/0004 , H01L51/56 , H05K1/0269 , H05K3/0008 , H05K3/1241
摘要： When using a liquid droplet ejection method, a conventional photomask is not required, however, it is required instead that a moving path of a nozzle or a substrate is controlled with accuracy at least in ejecting liquid droplets. According to the characteristics of compositions to be ejected or their pattern, such ejection conditions are desirably set as the moving rate of a nozzle or a substrate, ejection quantity, ejection distance and ejection rate of compositions, atmosphere of the space that the compositions are ejected, the temperature and moisture of the space, and heating temperature of the substrate. A liquid droplet ejection system in accordance with the invention comprises an input means for inputting data of a thin film pattern, a set means for setting a nozzle for a ejecting a composition containing a material for forming the thin film or setting a moving path of the substrate to which the composition is ejected, an image pick-up means for detecting an alignment marker formed on a substrate and a control means for controlling the moving path of the nozzle or the substrate.
摘要翻译：当使用液滴喷射方法时，不需要常规的光掩模，然而，需要至少在喷射液滴时精确地控制喷嘴或基板的移动路径。根据要喷射的组合物或其图案的特征，这种喷射条件期望设置为喷嘴或基底的移动速率，喷射量，喷射距离和组合物的喷射速率，组合物喷出的空间的气氛，空间的温度和湿度，以及基板的加热温度。根据本发明的液滴喷射系统包括用于输入薄膜图案的数据的输入装置，用于设置用于喷射包含用于形成薄膜的材料的组合物的喷嘴的设定装置或设置该薄膜图案的移动路径用于检测形成在基板上的取向标记的图像拾取装置和用于控制喷嘴或基板的移动路径的控制装置。

55. 发明授权

US08305509B2 Liquid crystal display device, electronic device having the same, and manufacturing method of the same 有权
标题翻译：液晶显示装置，具有该液晶显示装置的电子装置及其制造方法
公开(公告)号：US08305509B2
公开(公告)日：2012-11-06
申请号：US12908243
申请日：2010-10-20
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Yasuko Watanabe
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Yasuko Watanabe
IPC分类号： G02F1/136 , G02F1/1345
CPC分类号： G02F1/1345 , G02F2202/104 , H01L2224/45144 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.
摘要翻译：一种提高生产率的液晶显示装置及其制造方法。根据本发明的液晶显示装置包括在扫描线和数据线彼此相交的区域中，第一基板包括使用非晶半导体或用于沟道部分的有机半导体的第一薄膜晶体管，第二基板，介于第一基板和第二基板之间的液晶层，以及包括使用晶体半导体用于沟道部分的第二薄膜晶体管的第三基板。在本发明的液晶显示装置中，晶体半导体中的晶体晶界沿着第二薄膜晶体管中的电子或空穴的流动延伸，第一基板被附着到第二基板，使得第一基板被暴露，形成第二薄膜晶体管的第一区域和用于形成输入端子的第二区域和输出端子形成在第三基板上，并且第三基板的短边长度为1〜6mm，短边长度为第一区域为0.5至1mm。

56. 发明授权

US08300201B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08300201B2
公开(公告)日：2012-10-30
申请号：US13205029
申请日：2011-08-08
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Hideaki Kuwabara
IPC分类号： G02F1/1345
CPC分类号： H01L29/786 , G02F1/13452 , H01L27/1237 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675 , H01L29/78678 , H01L2029/7863
摘要： A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.
摘要翻译：形成在像素区域中的像素TFT通过沟道蚀刻型反交错型TFT形成在第一衬底上，并且源极区域和漏极区域的图案化，并且通过相同的光掩模进行像素电极的图案化。通过使用具有晶体半导体层的TFT和依赖于驱动电路的输入输出端子形成的驱动电路被作为一个单元。在第三基板上形成多个单元，之后将第三基板分割成单独的单元，并将所获得的棒驱动器安装在第一基板上。

57. 发明授权

US08236633B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08236633B2
公开(公告)日：2012-08-07
申请号：US12059652
申请日：2008-03-31
申请人： Keiichi Sekiguchi , Junichi Koezuka , Yasuyuki Arai , Shunpei Yamazaki
发明人： Keiichi Sekiguchi , Junichi Koezuka , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L21/84
CPC分类号： H01L27/1214 , H01L27/1203 , H01L27/127 , H01L29/78624 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2224/05599 , H01L2224/05099
摘要： The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region.
摘要翻译：本发明提供了一种制造半导体器件的方法，通过该方法，提供了包括有源层，与有源层接触的栅极绝缘膜和与有源层重叠的栅极与其间的栅极绝缘膜的晶体管。在有源层和第二区域之间，与栅电极重叠的第一区域的一部分添加杂质，而通过从有源层向一个倾斜方向添加杂质，而在有源层中添加杂质 ; 并且第二区域相对于第一区域位于一个方向上。

58. 发明授权

US08207010B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08207010B2
公开(公告)日：2012-06-26
申请号：US12153721
申请日：2008-05-23
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L21/00
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/511 , H01L21/0237 , H01L21/02532 , H01L21/0262 , H01L21/02678 , H01L21/67207 , H01L27/14632 , H01L31/022425 , H01L31/022466 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/0745 , H01L31/075 , H01L31/18 , H01L31/1884 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： It is an object to form a high-quality crystalline semiconductor layer directly over a large-sized substrate with high productivity without reducing the deposition rate and to provide a photoelectric conversion device in which the crystalline semiconductor layer is used as a photoelectric conversion layer. A photoelectric conversion layer formed of a semi-amorphous semiconductor is formed over a substrate as follows: a reaction gas is introduced into a treatment chamber where the substrate is placed; and a microwave is introduced into the treatment chamber through a slit provided for a waveguide that is disposed in approximately parallel to and opposed to the substrate, thereby generating plasma. By forming a photoelectric conversion layer using such a semi-amorphous semiconductor, a rate of deterioration in characteristics by light deterioration is decreased from one-fifth to one-tenth, and thus a photoelectric conversion device that has almost no problems for practical use can be obtained.
摘要翻译：本发明的目的是在不降低沉积速率的情况下以高生产率直接在大尺寸基板上形成高质量的结晶半导体层，并提供其中使用晶体半导体层作为光电转换层的光电转换装置。在半导体基板上形成由半非晶半导体形成的光电转换层，反应气体被引入放置基板的处理室内，并且通过设置在与基板大致平行并相对设置的波导的狭缝上，将微波引入处理室，从而产生等离子体。通过使用这样的半非晶半导体形成光电转换层，通过光劣化的特性劣化率从五分之一降低到十分之一，因此实际使用几乎没有问题的光电转换装置可以是获得。

59. 发明授权

US08178398B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US08178398B2
公开(公告)日：2012-05-15
申请号：US12219244
申请日：2008-07-18
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L21/00
CPC分类号： C23C16/511 , H01J37/32192
摘要： To improve a deposition rate of a microcrystalline semiconductor layer by using a deposition method and to improve productivity of a display device including a TFT of a microcrystalline semiconductor, a reactive gas containing helium is supplied to a treatment chamber surrounded with a plurality of juxtaposed waveguides and a wall surface; a microwave is supplied to a space which is interposed between juxtaposed waveguides to generate plasma while the pressure of the treatment chamber is held at an atmospheric pressure or a sub-atmospheric pressure typically a pressure of 1×102 Pa or more and 1×105 Pa or less; and a microcrystalline semiconductor layer is deposited over a substrate placed in the treatment chamber. High density plasma is generated by providing slits on sides of the plurality of juxtaposed waveguides which face to another waveguide and supplying a microwave into the treatment chamber through the slit.
摘要翻译：为了通过使用沉积方法提高微晶半导体层的沉积速率并提高包括微晶半导体的TFT的显示装置的生产率，将含有氦的反应气体供给到被多个并置的波导包围的处理室，墙面; 将微波提供给介于并置波导之间的空间以产生等离子体，同时处理室的压力保持在大气压或低于大气压的压力为1×102Pa以上至1×105Pa 或更少; 并且在放置在处理室中的衬底上沉积微晶半导体层。通过在与另一个波导相对的多个并置的波导的侧面上设置狭缝并通过狭缝将微波提供给处理室来产生高密度等离子体。

60. 发明授权

US08054035B2 Power storage device including an antenna 有权
标题翻译：包括天线的蓄电装置
公开(公告)号：US08054035B2
公开(公告)日：2011-11-08
申请号：US12945228
申请日：2010-11-12
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01M10/46
CPC分类号： H01L27/0629 , H01Q1/36 , H01Q1/38 , H01Q7/00 , H01Q9/285 , H02J7/025 , H02J17/00 , H02J50/10 , H02J50/27 , H02J50/50
摘要： In the field of portable electronic devices in the future, portable electronic devices will be desired, which are smaller and more lightweight and can be used for a long time period by one-time charging, as apparent from provision of one-segment partial reception service “1-seg” of terrestrial digital broadcasting that covers the mobile objects such as a cellular phone. Therefore, the need for a power storage device is increased, which is small and lightweight and capable of being charged without receiving power from commercial power. The power storage device includes an antenna for receiving an electromagnetic wave, a capacitor for storing power, and a circuit for controlling store and supply of the power. When the antenna, the capacitor, and the control circuit are integrally formed and thinned, a structural body formed of ceramics or the like is partially used. A circuit for storing power of an electromagnetic wave received at the antenna in a capacitor and a control circuit for arbitrarily discharging the stored power are provided, whereby lifetime of the power storage device can be extended.
摘要翻译：在将来的便携式电子设备领域中，期望便携式电子设备更小，更轻便，并且可以通过一次性充电长时间使用，从提供单段部分接收服务涵盖诸如蜂窝电话的移动物体的地面数字广播的“1-seg”。因此，增加对电力存储装置的需求，其小而轻，并且能够在不从商业电力接收电力的情况下进行充电。蓄电装置包括用于接收电磁波的天线，用于存储电力的电容器和用于控制电力的存储和供给的电路。当天线，电容器和控制电路整体形成和变薄时，部分地使用由陶瓷等构成的结构体。提供一种用于存储电容器中的天线接收的电磁波的电力的电路和用于任意放电所存储的电力的控制电路，由此可以延长蓄电装置的寿命。

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