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51. 发明申请

US20110244660A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体基板的制造方法和半导体器件的制造方法
公开(公告)号：US20110244660A1
公开(公告)日：2011-10-06
申请号：US13072150
申请日：2011-03-25
申请人： Junichi KOEZUKA
发明人： Junichi KOEZUKA
IPC分类号： H01L21/322
CPC分类号： H01L21/26506 , H01L21/268 , H01L21/76254 , H01L21/84 , H01L27/1203
摘要： An object is to provide a manufacturing method of a semiconductor substrate provided with a single crystal semiconductor layer with a surface having a high degree of flatness. Another object is to manufacture a semiconductor device with high reliability by using the semiconductor substrate provided with a single crystal semiconductor layer with a high degree of flatness. In a manufacturing process of a semiconductor substrate, a thin embrittled region containing a large crystal defect is formed in a single crystal semiconductor substrate at a predetermined depth by subjecting the single crystal semiconductor substrate to a rare gas ion irradiation step, a laser irradiation step, and a hydrogen ion irradiation step. Then, by performing a separation heating step, a single crystal semiconductor layer that is on a surface side than the embrittled region is transferred to a base substrate.
摘要翻译：本发明的目的是提供具有平坦度高的表面的具有单晶半导体层的半导体衬底的制造方法。另一个目的是通过使用具有高度平坦度的单晶半导体层的半导体衬底来制造具有高可靠性的半导体器件。在半导体衬底的制造工艺中，通过对单晶半导体衬底进行稀有气体离子照射步骤，激光照射步骤，在单晶半导体衬底中以预定深度形成含有大晶体缺陷的薄脆化区域，和氢离子照射步骤。然后，通过进行分离加热工序，将表面侧的脆性区域的单晶半导体层转移到基板。

52. 发明申请

US20110070722A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110070722A1
公开(公告)日：2011-03-24
申请号：US12957631
申请日：2010-12-01
申请人： Junichi KOEZUKA , Hiroshi OHKI , Taku HASEGAWA , Mami GOTO
发明人： Junichi KOEZUKA , Hiroshi OHKI , Taku HASEGAWA , Mami GOTO
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/302 , H01J37/32357 , H01J37/32412 , H01J37/3266 , H01J2237/006 , H01J2237/08 , H01L21/2236 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78621
摘要： Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.
摘要翻译：即使在具有灯丝的离子掺杂装置的各种条件下进行掺杂的情况下，也可以进行具有抑制的丝状劣化的掺杂。离子掺杂完成后，停止供给原料气体，并保持供给氢或稀有气体。之后，灯丝的电流降低，灯丝温度降低。因此，在降低灯丝温度时，灯丝周围的原料气体被氢气或稀有气体置换。

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