专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08860051B2 Textured phosphor conversion layer light emitting diode 有权
标题翻译：纹理磷光体转换层发光二极管
公开(公告)号：US08860051B2
公开(公告)日：2014-10-14
申请号：US11940885
申请日：2007-11-15
申请人： Natalie N. Fellows , Steven P. DenBaars , Shuji Nakamura
发明人： Natalie N. Fellows , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/22 , H01L33/58 , H01L33/50 , H01L33/44
CPC分类号： H01L33/22 , H01L33/0075 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/44 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/508 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091 , H01L2924/00014 , H01L2924/00012
摘要： This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.
摘要翻译：本发明涉及用于光电应用的LED灯提取。更具体地，本发明涉及与用于高效（Al，Ga，In）N的发光二极管应用的优化的光学器件和磷光体层组合的（Al，Ga，In）及其制造方法。进一步的扩展是与成形光学元件组合的成形高折射率光提取材料的一般组合。

52. 发明授权

US08835200B2 High light extraction efficiency nitride based light emitting diode by surface roughening 有权
标题翻译：高光提取效率氮化物基发光二极管通过表面粗糙化
公开(公告)号：US08835200B2
公开(公告)日：2014-09-16
申请号：US13349342
申请日：2012-01-12
申请人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/32 , H01L21/02
CPC分类号： H01L33/22 , H01L21/02433 , H01L21/02458 , H01L33/0075 , H01L33/10 , H01L33/18 , H01L33/20 , H01L33/32 , H01L2933/0083
摘要： A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
摘要翻译： III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光萃取。纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

53. 发明申请

US20140252396A1 HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING 审中-公开
标题翻译：通过表面粗化，高效率的基于氮化镓的发光二极管
公开(公告)号：US20140252396A1
公开(公告)日：2014-09-11
申请号：US14281535
申请日：2014-05-19
申请人： Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
发明人： Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
IPC分类号： H01L33/22 , H01L33/60 , H01L33/32
CPC分类号： H01L33/22 , H01L33/00 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54 , H01L33/60 , H01L2224/16225
摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
摘要翻译：一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

54. 发明授权

US08772758B2 Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权
标题翻译：通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加
公开(公告)号：US08772758B2
公开(公告)日：2014-07-08
申请号：US13470598
申请日：2012-05-14
申请人： Matthew T. Hardy , Po Shan Hsu , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Matthew T. Hardy , Po Shan Hsu , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02513
摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.
摘要翻译：一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷更多未掺杂的缓冲层。掺杂可以减少或防止错配位错线的形成和额外的穿线位错。缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。

55. 发明申请

US20140183579A1 MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE 审中-公开
标题翻译： MISCUT SEMICOLAR OPTOELECTRONIC DEVICE
公开(公告)号：US20140183579A1
公开(公告)日：2014-07-03
申请号：US13732532
申请日：2013-01-02
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/18 , H01L33/00
CPC分类号： H01L33/0075 , H01L33/16
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。

56. 发明授权

US08686397B2 Low droop light emitting diode structure on gallium nitride semipolar substrates 有权
标题翻译：氮化镓半极性衬底上的低垂直发光二极管结构
公开(公告)号：US08686397B2
公开(公告)日：2014-04-01
申请号：US13493430
申请日：2012-06-11
申请人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
发明人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/0062 , H01L33/0075 , H01L33/16 , H01L33/32
摘要： A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
摘要翻译：通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL）地区。本发明还包括制造这种装置的方法。

57. 发明授权

US08641823B2 Reactor designs for use in ammonothermal growth of group-III nitride crystals 有权
标题翻译：用于III族氮化物晶体的氨热生长的反应器设计
公开(公告)号：US08641823B2
公开(公告)日：2014-02-04
申请号：US13128083
申请日：2009-11-04
申请人： Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
发明人： Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
IPC分类号： C30B7/10 , C30B29/40 , B01D9/00
CPC分类号： C30B7/105 , B01D9/0013 , B01D9/0031 , C30B7/10 , C30B29/40 , C30B29/403 , H01L21/67109 , Y10T117/1096 , Y10T428/24355
摘要： Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.
摘要翻译：用于III族氮化物晶体的氨热生长的反应器设计。内部加热用于增强和/或设计流体运动，气体混合以及在用于III族氮化物晶体的氨热生长的容器内产生溶解度梯度的能力。新型挡板设计用于控制和改进用于III族氮化物晶体的氨热生长的容器内的连续流体运动。

58. 发明授权

US08624140B2 Key switch and keyboard 有权
标题翻译：钥匙开关和键盘
公开(公告)号：US08624140B2
公开(公告)日：2014-01-07
申请号：US11822840
申请日：2007-07-10
申请人： Takeshi Nishino , Junichi Maruyama , Shuji Nakamura
发明人： Takeshi Nishino , Junichi Maruyama , Shuji Nakamura
IPC分类号： H01H13/06
CPC分类号： H01H3/122 , H01H13/702 , H01H2209/082 , H01H2219/014 , H01H2219/064 , H01H2221/07 , H01H2223/002
摘要： A key switch preferably used for a keyboard as an input device in electronic equipment. The key switch includes a base section; a key top disposed above the base section; a pair of link members interlocked to each other to support and direct the key top in a vertical direction relative to the base section; a switch member including a contact section capable of opening and closing in response to a vertical movement of the key top; and a biasing member capable of applying an elastic biasing force in a vertically upward direction to the key top. The key switch further includes a protection member disposed and inserted between the base section and the key top at a position where the protection member surrounds the pair of link members, the contact section and the biasing member. The protection member is elastically deformed to follow the vertical movement of the key top, and protects the pair of link members, the contact section and the biasing member from penetration of foreign matter.
摘要翻译：一种键盘开关，优选用于键盘作为电子设备中的输入装置。钥匙开关包括基座部分; 位于基部上方的键顶; 一对连杆构件彼此互锁，以相对于基部在垂直方向上支撑和引导键顶; 开关构件，其包括响应于所述键顶的垂直移动而能够打开和关闭的接触部; 以及能够向键顶向垂直向上方向施加弹性偏压力的偏置构件。钥匙开关还包括保护构件，该保护构件设置并插入在基部和键顶之间的保护构件围绕该对连杆构件，接触部分和偏置构件的位置处。保护构件弹性变形以跟随键顶的垂直运动，并且保护一对连杆构件，接触部分和偏压构件不会渗透异物。

59. 发明授权

US08592802B2 (Al, In, Ga, B)N device structures on a patterned substrate 有权
标题翻译：（Al，In，Ga，B）N个器件结构
公开(公告)号：US08592802B2
公开(公告)日：2013-11-26
申请号：US13454321
申请日：2012-04-24
申请人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
发明人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/22
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0
摘要翻译：在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

60. 发明授权

US08541794B2 Nitride semiconductor light-emitting devices 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08541794B2
公开(公告)日：2013-09-24
申请号：US12570907
申请日：2009-09-30
申请人： Shinichi Nagahama , Masayuki Senoh , Shuji Nakamura
发明人： Shinichi Nagahama , Masayuki Senoh , Shuji Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译：包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式