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51. 发明授权

US07314785B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07314785B2
公开(公告)日：2008-01-01
申请号：US10968240
申请日：2004-10-20
申请人： Shunpei Yamazaki , Osamu Nakamura , Aki Yamamiti , Naoto Yamade
发明人： Shunpei Yamazaki , Osamu Nakamura , Aki Yamamiti , Naoto Yamade
IPC分类号： H01L21/336 , H01L21/00 , H01L21/84
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3272 , H01L51/5206 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L2251/5323 , H01L2251/552
摘要： A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.
摘要翻译：一种可靠性提高的显示装置及其制造方法，其产率提高。根据本发明的显示装置包括显示区域，包括第一电极，覆盖第一电极的边缘的绝缘层，形成在第一电极上的含有机化合物的层和第二电极。第一电极和绝缘层掺杂有一种导电性的杂质元素。

52. 发明申请

US20070099440A1 Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus 有权
标题翻译：半导体器件，半导体器件和激光照射设备的制造方法
公开(公告)号：US20070099440A1
公开(公告)日：2007-05-03
申请号：US11637914
申请日：2006-12-13
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C30B1/023 , C30B1/08 , C30B29/06 , H01L21/02683 , H01L21/2026
摘要： [Object]It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method. [Solution]A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀的同时，均匀地结晶半导体膜。本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件方法。 [解决方案]一种半导体器件的制造方法，其特征在于，包括以下步骤：通过离子掺杂法将形成在绝缘表面上的半导体膜添加第一稀有气体，并将其中添加有激光的第一稀土气体照射到半导体膜第二惰性气体的气氛，其中当照射激光时，将第一稀有气体施加到半导体膜上。

53. 发明授权

US07209306B2 Recording medium, recording method, and recording/reproducing device 有权
标题翻译：记录介质，记录方法和记录/再现装置
公开(公告)号：US07209306B2
公开(公告)日：2007-04-24
申请号：US10477916
申请日：2003-03-12
申请人： Osamu Nakamura
发明人： Osamu Nakamura
IPC分类号： G11B5/09
CPC分类号： G11B20/1883 , G11B5/00813 , G11B5/0086 , G11B15/087 , G11B20/10 , G11B20/1208 , G11B27/107 , G11B27/11 , G11B27/3027 , G11B27/3063 , G11B2220/655 , G11B2220/90
摘要： As a tape recording format, tracks are formed by a succession of block units, and a data unit called a group is formed by data of size equivalent to a predetermined plurality of tracks. Using this format, a base group number indicating the group to which the current track physically belongs is recorded in the ID information for a track, and the lower four bits or similar of a group number indicating the group to which the current block logically belongs is recorded within a block. By this means, even if rewriting is performed in block units and a recorded state results in which the blocks of a plurality of groups are intermixed within a track, the group to which each block belongs can be correctly identified during reproduction.
摘要翻译：作为磁带记录格式，通过一系列块单元形成轨迹，并且称为组的数据单元由等同于预定多个磁道的大小的数据形成。使用该格式，表示当前轨道物理上属于的组的基组号被记录在轨道的ID信息中，并且指示当前块逻辑上属于的组的组号的低四位或类似值是记录在一个块内。通过这种方式，即使以块为单位执行重写，并且记录状态导致多个组中的块被混合在轨道内，则可以在再现期间正确地识别每个块所属的组。

54. 发明申请

US20060237397A1 Method for manufacturing semiconductor device and laser irradiation apparatus 有权
标题翻译：半导体装置及激光照射装置的制造方法
公开(公告)号：US20060237397A1
公开(公告)日：2006-10-26
申请号：US11471494
申请日：2006-06-21
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L21/36 , B23K26/00
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光来有效地防止氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

55. 发明授权

US07109684B2 Secondary cell charger and charging method 失效
标题翻译：二次电池充电器和充电方法
公开(公告)号：US07109684B2
公开(公告)日：2006-09-19
申请号：US10481691
申请日：2003-05-16
申请人： Hiromi Takaoka , Shigetomo Matsui , Yutaka Iuchi , Taneo Nishino , Osamu Nakamura
发明人： Hiromi Takaoka , Shigetomo Matsui , Yutaka Iuchi , Taneo Nishino , Osamu Nakamura
IPC分类号： H02J7/00
CPC分类号： H02J7/041 , H02J7/0029 , H02J7/0073 , H02J7/0078 , H02J7/044 , H02J2007/0037
摘要： An equipment and method for charging a secondary battery are provided to quickly and surely charge a secondary battery (secondary batteries) while preventing the secondary battery (batteries) from overcharging or insufficient charging. Special charging voltage Es is applied to a secondary battery for a predetermined time, and then the applied voltage is switched to equilibrium voltage Eeq for establishing equilibrium cell potential of the secondary battery in its fully charged condition, wherein the special charging value Es is larger than the equilibrium value Eeq. Electric current i is detected while application of the equilibrium voltage Eeq. If the detected electric current i is larger than standard electric current J for finishing charging, the above detection and charging are repeated; otherwise, charge of the secondary battery 1 is halted.
摘要翻译：提供用于对二次电池充电的设备和方法，以便在防止二次电池（电池）过度充电或充电不足的同时快速且可靠地对二次电池（二次电池）充电。将特殊的充电电压E 施加到二次电池预定时间，然后将施加的电压切换到平衡电压E eq，以建立二次电池的平衡电池电位电池处于完全充电状态，其中特殊充电值E SUB大于平衡值E eq eq。在施加平衡电压E eq的情况下检测电流i。如果检测到的电流i大于用于完成充电的标准电流J，则重复上述检测和充电; 否则，二次电池1的充电被停止。

56. 发明授权

US07085628B2 Apparatus for the correction of temperature drift for pressure sensor, pressure control apparatus and pressure-type flow rate control apparatus 有权
标题翻译：用于校正压力传感器，压力控制装置和压力型流量控制装置的温度漂移的装置
公开(公告)号：US07085628B2
公开(公告)日：2006-08-01
申请号：US10476973
申请日：2002-11-22
申请人： Tadahiro Ohmi , Tomio Uno , Osamu Nakamura , Nobukazu Ikeda , Ryousuke Dohi , Kouji Nishino , Atsushi Matsumoto , Kazuhiko Sugiyama
发明人： Tadahiro Ohmi , Tomio Uno , Osamu Nakamura , Nobukazu Ikeda , Ryousuke Dohi , Kouji Nishino , Atsushi Matsumoto , Kazuhiko Sugiyama
IPC分类号： G06D23/00
CPC分类号： G05D7/0635 , G01D3/022 , G01F1/50 , G01F15/046 , G01L9/025
摘要： A pressure sensor, a pressure control apparatus, and a flow rate control apparatus are provided to automatically correct temperature drift of the pressure sensor and accurately detect pressure despite changes in temperature. An embodiment includes an upstream side pressure sensor between an orifice and a control valve, to control flow rate through the orifice by a regulating control valve, while calculating the flow from the upstream side pressure. With a temperature sensor, a memory means, and a temperature drift correcting means which calculates drift of the upstream side pressure sensor from data in the memory means when the temperature of the fluid changes and offsets the output drift of the upstream side pressure sensor with the calculated amount of the output drift, temperature drift of the pressure sensor is automatically corrected, enabling accurate control of flow rate.
摘要翻译：提供压力传感器，压力控制装置和流量控制装置来自动校正压力传感器的温度漂移并且尽管温度变化来精确地检测压力。一个实施例包括在孔口和控制阀之间的上游侧压力传感器，用于通过调节控制阀控制通过孔口的流量，同时计算从上游侧压力的流量。利用温度传感器，存储装置和温度漂移校正装置，当流体的温度变化时，上游侧压力传感器的输出漂移与输出漂移的计算量，压力传感器的温度漂移自动校正，可以精确控制流量。

57. 发明授权

US07067403B2 Method for manufacturing a semiconductor device that includes adding noble gas to a semiconductor film and then irradiating the semiconductor film with laser light in the presence of a magnetic field 失效
公开(公告)号：US07067403B2
公开(公告)日：2006-06-27
申请号：US10700516
申请日：2003-11-05
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L21/36
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

58. 发明授权

US07026764B2 Plasma producing apparatus and doping apparatus 失效
公开(公告)号：US07026764B2
公开(公告)日：2006-04-11
申请号：US10390882
申请日：2003-03-19
申请人： Osamu Nakamura
发明人： Osamu Nakamura
IPC分类号： H01J7/24
CPC分类号： B82Y10/00 , H01J37/32009 , H01J37/3255
摘要： An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma density has to be raised in order to increase the throughput. The structure of the plasma producing apparatus of the present invention relates to a plasma producing apparatus with a plasma chamber surrounded by walls to make material gas into plasma, characterized in the plasma chamber has a cathode electrode, an anode electrode, means for introducing the material gas, and exhaust means, and that a carbon nano tube is formed on a surface of the cathode electrode and the anode electrode is formed on the surface of the cathode electrode.

59. 发明申请

US20050276912A1 Wiring substrate, semiconductor device and manufacturing method thereof 有权
标题翻译：配线基板，半导体装置及其制造方法
公开(公告)号：US20050276912A1
公开(公告)日：2005-12-15
申请号：US11151003
申请日：2005-06-13
申请人： Hiroko Yamamoto , Osamu Nakamura
发明人： Hiroko Yamamoto , Osamu Nakamura
IPC分类号： B05D3/00 , B05D5/12 , B29C71/02 , B32B3/00 , H01L21/28 , H01L21/288 , H01L21/336 , H01L21/768 , H01L21/77 , H01L29/45 , H05K1/09 , H05K3/12
CPC分类号： H01L21/76838 , H01L21/28008 , H01L21/28026 , H01L21/28079 , H01L21/28123 , H01L21/288 , H01L21/76823 , H01L21/76825 , H01L21/76894 , H01L27/1292 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L2224/4847 , H01L2924/07811 , H01L2924/12044 , H01L2924/1305 , H01L2924/13091 , H05K1/095 , H05K3/1283 , H05K2201/0215 , H05K2203/0597 , H05K2203/107 , H05K2203/1131 , Y02P70/605 , Y10T428/24917 , H01L2924/00
摘要： The present invention provides a method for forming a wiring having a minute shape on a large substrate with a small number of steps, and further a wiring substrate formed by the method. Moreover, the present invention provides a semiconductor device in which cost reduction and throughput improvement are possible due to the small number of steps and reduction of materials and which has a semiconductor element with a minute structure, and further a manufacturing method thereof. According to the present invention, a composition including metal particles and organic resin is irradiated with laser light and a part of the metal particles is baked to form a conductive layer typified by a wiring, an electrode or the like over a substrate. Further, a semiconductor device having the baked conductive layer as a wiring or an electrode is formed.
摘要翻译：本发明提供了一种在具有少量步骤的大基板上形成具有微小形状的布线的方法，并且还提供了通过该方法形成的布线基板。此外，本发明提供一种半导体器件，其中由于少量的步骤和材料的减少以及具有微小结构的半导体元件，成本降低和生产率提高是可能的，并且还提供了其制造方法。根据本发明，用激光照射包含金属颗粒和有机树脂的组合物，并且将一部分金属颗粒烘烤以形成通过基板上的布线，电极等代表的导电层。此外，形成具有烘烤的导电层作为布线或电极的半导体器件。

60. 发明申请

US20050258421A1 Semiconductor device and manufacture method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050258421A1
公开(公告)日：2005-11-24
申请号：US10406591
申请日：2003-04-04
申请人： Hiroshi Shibata , Osamu Nakamura , Shunichi Naka , Tohru Ueda
发明人： Hiroshi Shibata , Osamu Nakamura , Shunichi Naka , Tohru Ueda
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/322 , H01L21/336 , H01L21/77 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1214 , H01L27/1274 , H01L29/04 , H01L29/66757
摘要： The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.
摘要翻译：问题在于提供减少漏光电流的技术，以获得良好的显示。将选自氩，锗，硅，氦，氖，氪和氙的一种或多种元素注入晶体半导体层中，以通过均匀且适当的密度在半导体膜中分配由于上述元素注入引起的晶体缺陷，使载流子的复合中心，从而抑制光敏灵敏度而不破坏包括在晶体半导体层中的高度的载流子移动。

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