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51. 发明授权

US09029174B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09029174B2
公开(公告)日：2015-05-12
申请号：US14001454
申请日：2011-02-25
申请人： Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
发明人： Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L21/00 , H01L21/02 , H01L29/20 , H01L33/00
CPC分类号： H01L21/02365 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L2224/16225
摘要： A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate with a laser light with a wavelength by which the laser light passes through the substrate and the laser light is absorbed by the AlN layer, in a state in which the AlN layer receives compressive stress from the substrate. This allows the AlN layer to expand more than the surface of the substrate on at least an interface between the AlN layer and the substrate so as to increase the compressive stress, in order to remove the substrate from the AlN layer.
摘要翻译：一种结构包括基板，形成在基板的表面上并包括AlN层的模板层，以及通过在模板层上堆叠AlGaN半导体层而形成的器件结构部分。对于该结构，通过激光通过基板的激光的激光和激光被AlN层吸收，AlN层从靠近基板的一侧照射，其中AlN 层从基底接收压应力。这允许AlN层在AlN层和衬底之间的至少一个界面上比衬底的表面更多地膨胀，以便增加压缩应力，以便从AlN层去除衬底。

52. 发明授权

US08811473B2 Moving picture decoding device, moving picture decoding method, moving picture decoding system, integrated circuit, and program 有权
标题翻译：运动图像解码装置，运动图像解码方法，运动图像解码系统，集成电路和程序
公开(公告)号：US08811473B2
公开(公告)日：2014-08-19
申请号：US13126040
申请日：2010-06-16
申请人： Hiroshi Amano
发明人： Hiroshi Amano
IPC分类号： H04N7/28 , H04N7/36 , H04N7/26 , H04N7/68
CPC分类号： H04N19/0063 , H04N19/44 , H04N19/523 , H04N19/895
摘要： To provide a moving picture decoding device capable of continuing motion compensation even when an error is included in a filter coefficient for motion compensation. The moving picture decoding device includes: a decoding unit (1001) which decodes (i) a motion vector indicating a sub-pixel position and (ii) a filter coefficient for identifying a pixel value at the sub-pixel position, the motion vector and the filter coefficient being included in a coded stream; an error detecting unit (1002) which detects an error in the filter coefficient; a modifying unit (1010) which modifies one of the motion vector and the filter coefficient so as to enable identification of a pixel value at a pixel position for motion compensation, when the error is detected; and a motion compensation unit (1007) which performs motion compensation by identifying the pixel value at the pixel position using the modified one, when the error is detected.
摘要翻译：即使在用于运动补偿的滤波器系数中包含错误的情况下也能够提供能够继续运动补偿的运动图像解码装置。运动图像解码装置包括：解码单元（1001），其解码（i）指示子像素位置的运动矢量，以及（ii）用于识别子像素位置处的像素值的滤波器系数，运动矢量和滤波器系数包括在编码流中; 检测滤波器系数误差的误差检测单元（1002）; 修改单元（1010），其修改所述运动矢量和所述滤波器系数中的一个，以便当检测到所述误差时能够识别用于运动补偿的像素位置处的像素值; 以及运动补偿单元（1007），当检测到错误时，通过使用修改的像素位置识别像素位置来执行运动补偿。

53. 发明授权

US08574745B2 Resin composition and organic-electrolyte battery 有权
标题翻译：树脂组合物和有机电解质电池
公开(公告)号：US08574745B2
公开(公告)日：2013-11-05
申请号：US13325647
申请日：2011-12-14
申请人： Hiroshi Amano , Keiji Ogino , Kenji Hosaka , Ryouichi Senbokuya , Yoshio Shimoida , Hideaki Horie
发明人： Hiroshi Amano , Keiji Ogino , Kenji Hosaka , Ryouichi Senbokuya , Yoshio Shimoida , Hideaki Horie
IPC分类号： H01M6/42
CPC分类号： H01M2/06 , C08G59/24 , C08G59/26 , C08G59/4014 , C08G59/4021 , C08G59/50 , C08L63/00 , H01M2/08 , H01M2/30 , H01M4/661 , H01M10/05 , H01M10/052 , H01M10/0585 , C08L2666/22
摘要： Provided is a resin composition superior in the adhesiveness to a metal and having high organic solvent resistance, particularly, a resin composition preferable as a sealant for an organic electrolyte battery, which shows superior adhesiveness to a terminal or a collector made of a highly heat resistant metal such as stainless steel and nickel, does not easily develop degradation even when contacted with an organic electrolytic solution at a high temperature, and does not easily influence an electrolytic solution, and a highly reliable organic electrolyte battery wherein leaching of an electrolytic solution from an electrolyte layer is prevented by the resin composition.A resin composition containing (A) an epoxy resin containing at least (E1) an epoxy resin having an aromatic ring and an alicyclic skeleton and (B) a latent curing agent.
摘要翻译：提供一种与金属的粘合性优异且耐溶剂性高的树脂组合物，特别是优选作为有机电解质电池用密封剂的树脂组合物，该组合物对由耐高温性构成的端子或集电体表现出优异的粘附性金属如不锈钢和镍，即使在高温下与有机电解质接触时也不容易发生降解，并且不容易影响电解液，以及高可靠性的有机电解质电池，其中电解溶液从通过树脂组合物防止电解质层。一种树脂组合物，其含有（A）至少含有（E1）具有芳香环和脂环骨架的环氧树脂的环氧树脂和（B）潜伏性固化剂。

54. 发明授权

US08541292B2 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same 失效
标题翻译： III族氮化物半导体外延基板及其制造方法
公开(公告)号：US08541292B2
公开(公告)日：2013-09-24
申请号：US12866147
申请日：2009-01-28
申请人： Akira Bando , Hiroshi Amano
发明人： Akira Bando , Hiroshi Amano
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B25/02 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L31/03048 , H01L31/1844 , H01L33/0075 , H01S5/32341 , H01S2304/12 , Y02E10/544 , Y02P70/521
摘要： There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate (1) for growing an epitaxial film; and an ELO layer (4) having a composition of AlxGa1-xN (0≦x≦1) formed either on top of the substrate (1) or on top of a group III nitride layer (2) formed on top of the substrate (1), wherein the ELO layer (4) is a layer formed by using a mask pattern (3), which is composed of carbon and is formed either on top of the substrate (1) or on top of the group III nitride layer (2).
摘要翻译：提供一种III族氮化物半导体外延基板，其具有抑制的垂直方向上的穿透位错水平和优异的晶体质量，该III族氮化物半导体外延基板包括用于生长外延膜的基板（1）以及形成在基板（1）的顶部或形成在基板顶部上的III族氮化物层（2）的顶部上的Al x Ga 1-x N（0 @ x @ 1）的组成的ELO层（4） 1），其中所述ELO层（4）是通过使用由碳构成的掩模图案（3）形成的层，并且形成在所述基板（1）的顶部上或者形成在所述III族氮化物层（ 2）。

55. 发明申请

US20130089149A1 IMAGE DECODING APPARATUS, IMAGE DECODING METHOD, INTEGRATED CIRCUIT, AND PROGRAM 审中-公开
标题翻译：图像解码设备，图像解码方法，集成电路和程序
公开(公告)号：US20130089149A1
公开(公告)日：2013-04-11
申请号：US13805704
申请日：2011-06-21
申请人： Yoshiteru Hayashi , Takeshi Tanaka , Takashi Hashimoto , Satoshi Kajita , Hiroshi Amano
发明人： Yoshiteru Hayashi , Takeshi Tanaka , Takashi Hashimoto , Satoshi Kajita , Hiroshi Amano
IPC分类号： H04N7/32
CPC分类号： H04N19/51 , H04N19/107 , H04N19/176 , H04N19/44 , H04N19/52 , H04N19/61 , H04N19/86 , H04N19/96
摘要： An image decoding device is provided that decodes, without an increase in the circuit size, a coded video sequence including a large-size block. The image decoding apparatus includes: a block division unit which divides a current block that is to be decoded and is included in a picture of the coded video sequence, into sub-blocks; an image obtainment unit which obtains, for each of the sub-blocks, image data corresponding to the sub-block from a recording medium; a prediction unit which generates, for each of the sub-blocks, a predicted image of the sub-block, based on the image data obtained by the image obtainment unit; and a reconstruction unit which reconstructs each of the sub-blocks, by adding the predicted image generated for the sub-block to the sub-block.
摘要翻译：提供了一种图像解码装置，其不增加电路尺寸，对包括大尺寸块的编码视频序列进行解码。图像解码装置包括：块分割单元，将要被解码并被包括在编码视频序列的图像中的当前块划分成子块; 对于每个子块，从记录介质获取与子块相对应的图像数据的图像获取单元; 基于由所述图像获取单元获得的图像数据，对于每个所述子块生成所述子块的预测图像的预测单元; 以及重建单元，通过将对于子块生成的预测图像添加到子块中，来重构每个子块。

56. 发明申请

US20120147959A1 MOVING IMAGE DECODING APPARATUS, MOVING IMAGE CODING APPARATUS, MOVING IMAGE DECODING CIRCUIT, AND MOVING IMAGE DECODING METHOD 有权
标题翻译：移动图像解码设备，移动图像编码设备，移动图像解码电路和移动图像解码方法
公开(公告)号：US20120147959A1
公开(公告)日：2012-06-14
申请号：US13255267
申请日：2011-03-02
申请人： Hiroshi Amano , Takeshi Tanaka , Takashi Hashimoto , Yoshiteru Hayashi
发明人： Hiroshi Amano , Takeshi Tanaka , Takashi Hashimoto , Yoshiteru Hayashi
IPC分类号： H04N7/32
CPC分类号： H04N19/82 , H04N19/117 , H04N19/43 , H04N19/44 , H04N19/513 , H04N19/61
摘要： A moving image decoding apparatus which enables reduction in the memory bandwidth and the memory access latency for the motion compensation filter coefficients for use in inter-picture prediction involving motion compensation using variable coefficients includes: a decoding unit (101) which decodes, from a coded stream, a plurality of motion compensation filter coefficients; a memory (109) for holding the motion compensation filter coefficients included in the coded stream; a filter coefficient storage unit (103) for holding at least one of the motion compensation filter coefficients which is required for the motion compensation; a motion compensation unit (107) which performs motion compensation using the required motion compensation filter coefficient held in the filter coefficient storage unit; and a filter coefficient transfer control unit (102) which writes, in the memory, the motion compensation filter coefficients decoded by the decoding unit, and transfers the required motion compensation filter coefficient from the memory to the filter coefficient storage unit, only when the required coefficient is not yet stored therein.
摘要翻译：一种运动图像解码装置，其能够减少使用可变系数的运动补偿的帧间预测中使用的运动补偿滤波器系数的存储器带宽和存储器访问等待时间，包括：解码单元，流，多个运动补偿滤波器系数; 用于保持包含在编码流中的运动补偿滤波器系数的存储器（109）滤波器系数存储单元，用于保持运动补偿所需的运动补偿滤波器系数中的至少一个; 使用保持在滤波器系数存储单元中的所需运动补偿滤波器系数进行运动补偿的运动补偿单元（107）以及滤波器系数传递控制单元（102），其在存储器中写入由解码单元解码的运动补偿滤波器系数，并且将所需的运动补偿滤波器系数从存储器传送到滤波器系数存储单元，只有当所需的系数尚未存储在其中。

57. 发明申请

US20120037923A1 LIGHT EMITTING DIODE ELEMENT AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：发光二极管元件及其制造方法
公开(公告)号：US20120037923A1
公开(公告)日：2012-02-16
申请号：US13259705
申请日：2010-03-26
申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Takuya Nishimura , Fumiharu Teramae , Toshiyuki Kondo
发明人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Takuya Nishimura , Fumiharu Teramae , Toshiyuki Kondo
IPC分类号： H01L33/02
CPC分类号： H01L33/08 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/343
摘要： [PROBLEM] To provide a light emitting diode which can obtain emission at shorter wavelength side of emission range of normal 6H-type SiC doped with B and N, and a method for manufacturing the same.[MEANS FOR SOLVING] Porous layer 124 consisting of single crystal 6H-type SiC of porous state is formed on a SiC substrate 102 of a light emitting diode element 100 such that visible light which is from blue color to green color when the porous layer 124 is excited by ultra violet light emitted from nitride semiconductor layer.
摘要翻译： [问题]提供一种能够获得掺杂有B和N的正常6H型SiC的发射范围的较短波长侧的发光二极管及其制造方法。 [解决方案]由多孔状态的单晶6H型SiC构成的多孔层124形成在发光二极管元件100的SiC衬底102上，使得当多孔层124的蓝色到绿色的可见光被从氮化物半导体层发射的紫外线激发。

58. 发明申请

US20110254048A1 GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE 审中-公开
标题翻译：第III组氮化物半导体外延衬底
公开(公告)号：US20110254048A1
公开(公告)日：2011-10-20
申请号：US12671660
申请日：2008-08-06
申请人： Hiroshi Amano , Akira Bando
发明人： Hiroshi Amano , Akira Bando
IPC分类号： H01L29/20 , H01L33/30
CPC分类号： C30B29/403 , C30B25/20 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/16 , H01L33/32
摘要： An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, i.e., an AlxGa1-xN (0≦x≦1) epitaxial substrate succeeding in reducing the generation of cracking or dislocation, and enhancing the crystal quality. More specifically, an object of the present invention is to provide an AlxGa1-xN (0
摘要翻译：本发明的一个目的是提供一种III族氮化物半导体外延衬底，即Al x Ga 1-x N（0＆amp; N e; x＆nlE; 1）外延衬底，其后继续减少裂纹或位错的产生，并提高晶体质量。更具体地，本发明的目的是提供一种用于紫外线或深紫外线区域中的发光器件的Al x Ga 1-x N（0

59. 发明授权

US07985964B2 Light-emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US07985964B2
公开(公告)日：2011-07-26
申请号：US12313123
申请日：2008-11-17
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/04 , H01L33/32 , H01L33/40
摘要： The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.
摘要翻译：本发明公开了一种发光半导体器件，包括：由高反射金属制成的第一电极; 第二电极; 隧道结层，通过第一欧姆接触耦合到第一电极，并通过在第一电极和第二电极之间施加反向偏置电压来产生隧道电流; 设置在隧道结层和第二电极之间的发光层。

60. 发明申请

US20090166674A1 Ultraviolet light receiving element 审中-公开
标题翻译：紫外光接收元件
公开(公告)号：US20090166674A1
公开(公告)日：2009-07-02
申请号：US12227529
申请日：2006-05-24
申请人： Motoaki Iwaya , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
发明人： Motoaki Iwaya , Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L31/0352
CPC分类号： H01L29/2003 , H01L31/1126
摘要： In an ultraviolet light receiving element using a group III nitride semiconductor, the ultraviolet light receiving element having an enhanced light receiving sensitivity is provided. An electron is excited from a valence band to a conduction band 61 by means of a depleted layer generated by irradiating a light having energy larger than band gap energy of an undoped layer 44, and electron-hole pairs are generated. A band structure is varied by the generated electron-hole pairs, and thus a portion having an energy lower than that of a quasi-Fermi level 62 of an electron at a boundary between an undoped layer 43 and the undoped layer 44, so that a two-dimensional electron gas 63 is formed. Since the two-dimensional electron gas 63 mentioned above serves as a channel, a large current is flowed by applying a voltage between drain electrode 46-source electrode 7.
摘要翻译：在使用III族氮化物半导体的紫外光接收元件中，提供了具有增强的光接收灵敏度的紫外光接收元件。通过照射具有大于未掺杂层44的带隙能量的能量的光而产生的耗尽层，从价带向导带61激发电子，并产生电子 - 空穴对。通过产生的电子 - 空穴对，并且因此，在未掺杂层43和未掺杂层44之间的边界处，具有能量低于电子的准费米能级62的能量的部分的带结构变化，使得形成二维电子气63。由于上述二维电子束63用作沟道，所以通过在漏电极46源电极7之间施加电压而流过大电流。

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