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    • 52. 发明授权
    • Method for preparing porous SOG film
    • 多孔SOG薄膜的制备方法
    • US06919106B2
    • 2005-07-19
    • US09926671
    • 2001-04-03
    • Hirohiko MurakamiChiaki TanakaMasaaki Hirakawa
    • Hirohiko MurakamiChiaki TanakaMasaaki Hirakawa
    • H01L21/316H01L21/768H05H1/00
    • H01L21/02126H01L21/02203H01L21/02216H01L21/02282H01L21/0234H01L21/02359H01L21/02362H01L21/31695H01L21/7682H01L2221/1047
    • A porous SOG film is formed by preparing an organic silane solution containing an organic silane, water and an alcohol, subjecting the organic silane to acid hydrolysis or alkali hydrolysis and then heat-treating the resulting reaction system in the presence of a surfactant to thus form a porous SiO2 film to use for an interlayer insulating film. Alternatively, a porous SOG film is formed by repeating the foregoing step at least one time; or by forming a hydrophobic film on the porous SiO2 film prepared by the foregoing step by the CVD or sputtering technique to thus cap the surface of the porous film; or repeating the porous film-forming and capping steps at least one time. Moreover, after the preparation of the foregoing porous SiO2 film, it is subjected to either of the oxygen plasma-treatment, electron beam-irradiation treatment and UV light-irradiation treatment to remove the unreacted OH groups remaining on the porous film and to thus form a porous SOG film. Further, the foregoing heat-treatment is carried out in the following two stages: in the first stage, the porous film is treated at a temperature capable of mainly removing the water and the alcohol through evaporation thereof; and in the second stage, the porous SiO2 film is treated at a temperature (350 to 450° C.) sufficient for covering at least the inner walls of the holes with the hydrophobic moieties of the surfactant.
    • 通过制备含有有机硅烷,水和醇的有机硅烷溶液,使有机硅烷进行酸水解或碱水解,然后在表面活性剂存在下对所得反应体系进行热处理,从而形成多孔SOG膜 用于层间绝缘膜的多孔SiO 2膜。 或者,通过至少一次重复上述步骤形成多孔SOG膜; 或者通过CVD或溅射技术在上述步骤制备的多孔SiO 2膜上形成疏水膜,从而覆盖多孔膜的表面; 或至少一次重复多孔成膜和封盖步骤。 此外,在制备上述多孔SiO 2膜之后,对其进行氧等离子体处理,电子束照射处理和UV光照射处理,以除去未反应的OH基团 并在多孔膜上形成多孔的SOG膜。 此外,上述热处理在以下两个阶段进行:在第一阶段中,多孔膜在能够主要通过蒸发除去水和醇的温度下进行处理; 并且在第二阶段中,多孔SiO 2膜在足以用表面活性剂的疏水部分覆盖孔的至少内壁的温度(350-450℃)下进行处理。
    • 60. 发明授权
    • Electrophotographic photoconductor, carbonate compound for use in the
same, and intermediate compound for producing the carbonate compound
    • 用于其的电子照相感光体,碳酸酯化合物和用于制备碳酸酯化合物的中间体化合物
    • US5663407A
    • 1997-09-02
    • US422930
    • 1995-04-17
    • Tomoyuki ShimadaMasaomi SasakiChiaki Tanaka
    • Tomoyuki ShimadaMasaomi SasakiChiaki Tanaka
    • G03G5/06C07C69/96
    • G03G5/0618G03G5/0614G03G5/0616
    • An electrophotographic photoconductor having an electroconductive support and a photoconductive layer formed thereon containing as a photoconductive material at least one carbonate compound of formula (I): ##STR1## wherein R.sup.1 and R.sup.2 each is hydrogen, an alkyl group which may have a substituent, an aryl group which may have a substituent, or a condensed polycyclic group; Y is a bivalent arylene group which may have a substituent, ##STR2## in which Ar.sup.1 and Ar.sup.2 each is an arylene group which may have a substituent, R.sup.3 and R.sup.4 each Is hydrogen, an alkyl group which may have a substituent or an aryl group which may have a substituent, and 1 is an integer of 1 or 2; and R.sup.1 and R.sup.2, or R.sup.1 and Y may independently form a ring; X is an alkyl group which may have a substituent or an aryl group which may have a substituent; m is an integer of 0 or 1; and n is an integer of 0 to 6. In addition, a novel carbonate compound and a novel hydroxy compound as the intermediate material for the carbonate compound are disclosed.
    • 一种电子照相感光体,其具有形成于其上的导电性支持体和光电导层,其中含有至少一种式(I)的碳酸酯化合物作为光电导材料:其中R 1和R 2各自为氢,烷基可以具有 取代基,可具有取代基的芳基或稠合多环基团; Y是可以具有取代基的二价亚芳基,可以具有取代基的R 3和R 4各自为氢,可以具有取代基的烷基或可以具有取代基的芳基, 是1或2的整数; 且R 1和R 2,或R 1和Y可以独立地形成环; X是可以具有取代基的烷基或可以具有取代基的芳基; m为0或1的整数; n为0〜6的整数。另外,公开了作为碳酸酯化合物的中间体的新型碳酸酯化合物和新型羟基化合物。