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51. 发明授权

US06176206B1 Device for supplying fuel to diaphragm-type carburetor 有权
标题翻译：向隔膜型化油器供油的装置
公开(公告)号：US06176206B1
公开(公告)日：2001-01-23
申请号：US09422083
申请日：1999-10-21
申请人： Hirohisa Ishikawa , Hitoshi Abe , Hideo Kurasawa
发明人： Hirohisa Ishikawa , Hitoshi Abe , Hideo Kurasawa
IPC分类号： F02B3304
CPC分类号： F02M37/20 , F02M17/04 , F02M31/04 , F02M37/046 , Y02T10/126 , Y10S123/05
摘要： A fuel supply passage leading to a fuel tank is connected to an intake side of a fuel pump of a diaphragm-type carburetor, and a fuel transfer chamber incorporated in an intermediate portion of the fuel supply passage is provided in an insulator interposed between the carburetor and an engine. The fuel pumped from the fuel tank is heated in the chamber moderately, thereby decreasing the difference in temperature between the carburetor and the fuel introduced into the carburetor. Thus, the generation of fuel vapor in the diaphragm-type carburetor can be restrained.
摘要翻译：通向燃料箱的燃料供给通路连接到隔膜式化油器的燃料泵的进气侧，并且在燃料供给通路的中间部分配置的燃料传递室设置在插入在化油器之间的绝缘体和引擎。从燃料箱泵出的燃料在室内被适度地加热，从而降低化油器和引入化油器的燃料之间的温差。因此，可以抑制隔膜型化油器中的燃料蒸气的产生。

52. 发明授权

US5693139A Growth of doped semiconductor monolayers 失效
标题翻译：掺杂半导体单层的生长
公开(公告)号：US5693139A
公开(公告)日：1997-12-02
申请号：US77119
申请日：1993-06-15
申请人： Junichi Nishizawa , Hitoshi Abe , Soubei Suzuki
发明人： Junichi Nishizawa , Hitoshi Abe , Soubei Suzuki
IPC分类号： C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/20 , H01L21/205
CPC分类号： C23C16/45525 , C23C16/455 , C23C16/45531 , C23C16/45536 , C30B25/02 , C30B25/14 , C30B29/42 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas introduction rate in a crystal growth vessel, so that a monocrystal which is dimensionally as precise as a single monolayer can grow on the substrate by making use of chemical reactions on the heated substrate surface. Doped molecular layer epitaxy of a compound semiconductor comprising individual steps of introducing and evacuating a first source gas, introducing and evacuating a second source gas, and introducing and evacuating an impurity gas which contains an impurity element. The doped impurity concentration varies almost linearly with the pressure during doping in a wide range.
摘要翻译：在适当地控制晶体生长容器中的压力，衬底温度和气体导入速率的同时，重复交替地或周期性地引入含有要形成在衬底上的化合物半导体的组分元素分子的外部气体的循环，从而使单晶通过利用加热的基底表面上的化学反应，在单个单层上的尺寸精确地可以在基底上生长。包括化合物半导体的掺杂分子层外延，其包括引入和排空第一源气体，引入和抽空第二源气体，以及引入和排出含有杂质元素的杂质气体的各个步骤。掺杂杂质浓度在宽范围内掺杂期间的压力几乎线性变化。

53. 发明授权

US5367696A Register allocation technique in a program translating apparatus 失效
标题翻译：程序翻译装置中的寄存器分配技术
公开(公告)号：US5367696A
公开(公告)日：1994-11-22
申请号：US769446
申请日：1991-10-01
申请人： Hitoshi Abe
发明人： Hitoshi Abe
IPC分类号： G06F9/45 , G06F15/20
CPC分类号： G06F8/441 , G06F8/445
摘要： A program translating apparatus includes a detection portion, a separation portion, a register allocation portion, and a register assignment portion. All ranges of existence of variables are separated at starting points and ending points, profits are calculated in cases where split regions of the ranges of existence are respectively allocated to registers, and a priority for register allocation of the respective split regions is calculated. The register allocation/assignment is performed on the basis of the obtained priority.
摘要翻译：程序转换装置包括检测部分，分离部分，寄存器分配部分和寄存器分配部分。变量存在的所有范围在起始点和终点处分开，在存在范围的分割区分别分配给寄存器的情况下计算利润，并且计算各个分割区域的寄存器分配的优先级。基于获得的优先级执行寄存器分配/分配。

54. 发明授权

US5367616A Isopleth generator for applying isopleths to digital picture data and method therefor 失效
标题翻译：用于将等值线应用于数字图像数据的等效发生器及其方法
公开(公告)号：US5367616A
公开(公告)日：1994-11-22
申请号：US730467
申请日：1991-07-16
申请人： Naozane Yoshida , Tsutomu Takagi , Nobuhiro Washiya , Hitoshi Abe , Katsutoshi Tajima
发明人： Naozane Yoshida , Tsutomu Takagi , Nobuhiro Washiya , Hitoshi Abe , Katsutoshi Tajima
IPC分类号： G06T3/00 , G06T5/00 , G06F15/62
CPC分类号： G06T7/0083
摘要： An apparatus for adding isopleths to image data includes an input device for sequentially inputting image data to be displayed on an image screen of a display device, a horizontal delay circuit for delaying the inputted data by one horizontal scanning period, a column comparator for comparing the inputted data, that is, a sample, with a delayed sample from the horizontal delay circuit to thereby generate a signal indicating a sample to be converted into isopleth data, a sample delay circuit for delaying the sample outputted from the horizontal delay circuit by one sampling period, a row comparator for comparing the sample outputted from the horizontal delay circuit with the sample outputted from the sample delay circuit to thereby generate a signal indicating a sample to be converted into isopleth data, and an isoplete data generator responsive to the output of the column and row comparators for replacing the indicated input sample by predetermined distinguishable data and for outputting the predetermined distinguishable data to the display device.
摘要翻译：用于向图像数据添加等值线的装置包括用于顺序输入要显示在显示装置的图像屏幕上的图像数据的输入装置，用于将输入数据延迟一个水平扫描周期的水平延迟电路，用于将输入数据，即样本，具有来自水平延迟电路的延迟采样，从而产生指示要转换成等值数据的采样的信号;采样延迟电路，用于将从水平延迟电路输出的采样延迟一个采样周期，一个比较器，用于将从水平延迟电路输出的采样与从采样延迟电路输出的样本进行比较，从而产生指示要转换为等时数据的样本的信号;以及响应于列和行比较器，用于通过预定的可区分数据和输出来替换指示的输入样本将预定的可区分数据传送到显示设备。

55. 发明授权

US5353404A Information processing system 失效
标题翻译：信息处理系统
公开(公告)号：US5353404A
公开(公告)日：1994-10-04
申请号：US468271
申请日：1990-01-22
申请人： Hitoshi Abe , Toshimitsu Ando , Shigeko Yazawa , Yoshio Kiriu , Yasuhiko Hatakeyama
发明人： Hitoshi Abe , Toshimitsu Ando , Shigeko Yazawa , Yoshio Kiriu , Yasuhiko Hatakeyama
IPC分类号： H04N5/262 , G06T1/60 , G06T13/20 , G06F15/62
CPC分类号： G06T1/60
摘要： Frames of digital data each representing a single picture of a video motion picture display are handled in a computer system with an extended memory operating in parallel with a computer system instruction processor and main memory to bypass the computer system input/output processor for continuously outputting the video information on a real time basis. The outputted data may be recorded continuously at a constant data rate for an entire motion picture worth of information or actually displayed on the video display on a real time basis. The extended storage has a memory larger than the main memory, where all of the frame data is stored and read out in high speed bursts to a buffer that continuously reads the data out of the buffer for outputting. At least a start command and a starting address in the extended memory are contained within the main memory to be read out and decoded by the instruction processor and computer system memory storage control, for transfer to the extended memory, where they are used to start the program, which includes extended memory control words stored in the main memory, which control words are decoded and executed in the extended memory in parallel with the computer system instruction processor. Addresses of succeeding frames are generated and decoded and used for fetching entirely within the extended memory, for memory areas according to indirect addressing. The extended memory has external data transfer and internal data transfer registers that hold command words for respective transferring programs that may be operated in parallel, with conflict between external transfer and internal transfer being decided in favor of external transfer to assure continuous data outputting.
摘要翻译：在计算机系统中处理每个表示视频运动图像显示的单个图像的数字数据帧，其中扩展存储器与计算机系统指令处理器和主存储器并行操作，以绕过计算机系统输入/输出处理器，以连续输出视频信息实时基础。输出的数据可以以恒定的数据速率连续地记录整个运动画面的信息，或实时显示在视频显示器上。扩展存储器具有大于主存储器的存储器，其中所有帧数据以高速脉冲串存储和读出到缓冲器，该缓冲器从缓冲器中连续读取数据以供输出。扩展存储器中的起始命令和起始地址至少包含在主存储器内，以由指令处理器和计算机系统存储器存储控制进行读出和解码，以传送到扩展存储器，在那里它们被用于启动程序，其包括存储在主存储器中的扩展存储器控制字，该控制字与计算机系统指令处理器并行地在扩展存储器中被解码和执行。生成并解码后续帧的地址，并将其用于根据间接寻址完全在扩展存储器内获取存储区域。扩展存储器具有外部数据传输和内部数据传输寄存器，其保存可以并行操作的相应传送程序的命令字，外部传输和内部传输之间的冲突被决定有利于外部传输以确保连续的数据输出。

56. 发明授权

US5252548A Method of forming an oxide superconductor/semiconductor junction 失效
标题翻译：形成氧化物超导体/半导体结的方法
公开(公告)号：US5252548A
公开(公告)日：1993-10-12
申请号：US815562
申请日：1991-12-26
申请人： Hitoshi Abe , Tomoyuki Yamada
发明人： Hitoshi Abe , Tomoyuki Yamada
IPC分类号： H01L39/24 , B23B9/00
CPC分类号： H01L39/2432 , H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/729 , Y10S505/73 , Y10S505/731
摘要： In a method of forming an oxide superconductor/semiconductor junction between an oxide superconductor and a semiconductor containing bismuth or thallium, an atomic layer of silver of no more than 3 atoms thickness is formed by vapor deposition of silver on the surface of the semiconductor, an atomic layer of bismuth or thallium of no more than 3 atoms thickness is formed by vapor deposition of bismuth or thallium on the silver layer, the double atomic layer consisting of silver and bismuth or of silver and thallium are heated to form a layer wherein the atoms of silver and bismuth or silver and thallium are arranged regularly on the surface of the semiconductor, and the oxide superconductor is formed to a specified thickness on the regularly arranged layer.
摘要翻译：在氧化物超导体和含有铋或铊的半导体之间形成氧化物超导体/半导体结的方法中，通过在半导体的表面上蒸镀银而形成不大于3原子厚的银的原子层，通过在银层上铋或铊的气相沉积形成不超过3个原子厚度的铋或铊的原子层，将由银和铋或银和铊组成的双原子层加热形成其中原子的银和铋或银和铊规则地排列在半导体的表面上，并且氧化物超导体在规则排列的层上形成为规定的厚度。

57. 发明授权

US5200388A Metalorganic chemical vapor deposition of superconducting films 失效
标题翻译：超导薄膜的金属有机化学气相沉积
公开(公告)号：US5200388A
公开(公告)日：1993-04-06
申请号：US542151
申请日：1990-06-22
申请人： Hitoshi Abe , Tomohiro Nakamori
发明人： Hitoshi Abe , Tomohiro Nakamori
IPC分类号： C23C16/40 , H01L39/24
CPC分类号： C23C16/408 , H01L39/2441 , Y10S505/73 , Y10S505/734
摘要： An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, whereDPM is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula:CH.sub.3 C(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3THF is tetrahydrofuran represented by the chemical formula: ##STR1## DMF is dimethylformamide represented by the chemical formula:HCON(CH.sub.3).sub.2M is an element chosen from the list:Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb and Lu,and n is any integer. The starting gas sources are introduced into a growth tank after gasification together with at least one of the gases O.sub.2, O.sub.3, or N.sub.2 O, and the oxide film being formed on a substrate placed in said growth tank.
摘要翻译：通过CVD形成氧化物超导膜。原料气源为Ba（DPM）2，Ba（DPM）2x（THF）n或Ba（DPM）2x（DMF）n; Cu（DPM）2，Cu（DPM）2（THF）n或Cu（DPM）2×（DMF）n; 和M（DPM）3，M（DPM）3x（THF）n或M（DPM）3x（DMF）n，其中DPM是由化学式表示的2,2,6,6-四甲基-3,5-庚二糖酸：CH 3 C（CH 3）2 COCHCOC（CH 3）2 CH 3 THF是由以下化学式表示的四氢呋喃：DMF是由化学式：HCON（CH 3）2表示的二甲基甲酰胺。M是选自下列的元素：Y，La，Nd ，Pm，Sm，Eu，Er，Gd，Tb，Dy，Ho，Tm，Yb和Lu，n为任意整数。将起始气体源与气体中的至少一种气体O 2，O 3或N 2 O一起气化，并且氧化膜形成在置于所述生长槽中的衬底上，并引入到生长槽中。

58. 发明授权

US5014242A Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit 失效
标题翻译：设置在芯片上的RAM的半导体器件，以便最小化逻辑电路和存储器电路之间的信号路径的距离
公开(公告)号：US5014242A
公开(公告)日：1991-05-07
申请号：US281399
申请日：1988-12-08
申请人： Kazuhiro Akimoto , Masami Usami , Katsumi Ogiue , Hiroshi Murayama , Hitoshi Abe , Masamori Kashiyama , Yoshikuni Kobayashi , Satoru Isomura , Kinya Mitsumoto
发明人： Kazuhiro Akimoto , Masami Usami , Katsumi Ogiue , Hiroshi Murayama , Hitoshi Abe , Masamori Kashiyama , Yoshikuni Kobayashi , Satoru Isomura , Kinya Mitsumoto
IPC分类号： G11C5/02 , G11C7/10 , G11C7/22 , H03K5/24
CPC分类号： G11C7/22 , G11C5/025 , G11C7/10 , H03K5/2418
摘要： Disclosed is a semiconductor integrated circuit wherein a logic circuit for exchanging signals with RAMS, with the RAMS being disposed centrally on the semiconductor chip or substrate, is divided into a plurality of logic circuits in accordance with the kind of signals and the divided logic circuits are disposed around the RAM in such a manner as to minimize the distance of signal transmission paths with the RAM and in order to attain high speed access to RAMS.
摘要翻译：公开了一种半导体集成电路，其中用于与RAMS交换信号的逻辑电路，其中RAMS被布置在半导体芯片或基板上的中心处，根据信号的种类被分成多个逻辑电路，并且分开的逻辑电路是以使得与RAM的信号传输路径的距离最小化的方式设置在RAM周围，并且为了实现对RAMS的高速访问。

59. 发明授权

US4680999A Replaceable tool 失效
标题翻译：可更换工具
公开(公告)号：US4680999A
公开(公告)日：1987-07-21
申请号：US751829
申请日：1985-07-05
申请人： Sadao Kojima , Hitoshi Abe , Fumio Ishizaki , Atusi Otani , Hidefumi Shirotori
发明人： Sadao Kojima , Hitoshi Abe , Fumio Ishizaki , Atusi Otani , Hidefumi Shirotori
IPC分类号： B23B31/26 , B23B29/00 , B23B31/10
CPC分类号： B23B31/263 , B23B2260/022 , B23B2270/20 , Y10T279/17752 , Y10T409/309464 , Y10T82/2587 , Y10T82/2589
摘要： A replaceable tool is comprised of a tool holder forming a hole providing an engageable ditch on the insert end of the shank, a fitted hole for detachably fitting the shank of this tool holder therein and a sleeve providing a plurality of locking balls to be engaged and removed from the fitted ditch of the tool holder in the fitted hole. In the interior of the fitted hole of the sleeve, the locking balls are pressed on the engageable ditch and the draw collar for applying attraction in the axial direction of the sleeve is slidably provided. When the shank of the tool holder is fitted in the fitted hole of the sleeve, the head portion end of the tool holder is designed to be pressed on the end flange portion of the fitted hole of the sleeve, and when the draw collar is pulled in the axial direction of the sleeve, the shank portion is expanded through locking balls so as to be pressed on the inner wall surface of the fitted hole of the sleeve.
摘要翻译：可替换工具包括：工具架，其形成在柄的插入端上提供可接合沟槽的孔，用于将该工具架的柄可拆卸地装配在其中的装配孔和提供多个待接合的锁定球的套筒，从安装孔中的工具架的装配沟槽中移除。在套筒的安装孔的内部，锁定球被压在可接合沟槽上，并且可滑动地设置用于在套筒的轴向施加吸引力的拉环。当工具架的柄部装配在套筒的安装孔中时，工具架的头部端部被设计成被压在套筒的嵌合孔的端部凸缘部分上，并且当拉环被拉动时在套筒的轴向上，柄部通过锁定球膨胀，以便被压在套筒的嵌合孔的内壁表面上。

60. 发明授权

US09724236B2 Ophthalmic laser treatment apparatus 有权
公开(公告)号：US09724236B2
公开(公告)日：2017-08-08
申请号：US13073256
申请日：2011-03-28
申请人： Hitoshi Abe
发明人： Hitoshi Abe
IPC分类号： A61F9/008
CPC分类号： A61F9/00821 , A61F2009/00863 , A61F2009/00897
摘要： An ophthalmic laser treatment apparatus, comprising: an emitted treatment laser beam; an emitted aiming beam; an irradiation unit including a zoom lens and a scanner for scanning in two dimensions, and being arranged to irradiate both beams to the eye; an irradiation pattern setting unit including a switch for setting an irradiation pattern in which a plurality of spots is arranged; and a controller for controlling the aiming beam based on the set pattern during aiming before irradiation of the treatment beam, the controller being configured to divide the spots in the set pattern into two or more groups and switch the positions of the spots of the aiming beam at a predetermined time interval in each group to irradiate the aiming beam so that the irradiation spots of the aiming beam in a group before switching and another group after switching are not recognized simultaneously by an operator.

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