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51. 发明授权

US6101232A Active pixel sensor with intra-pixel charge transfer 失效
公开(公告)号：US6101232A
公开(公告)日：2000-08-08
申请号：US558521
申请日：1995-11-16
申请人： Eric R. Fossum , Sunetra Mendis , Sabrina E. Kemeny
发明人： Eric R. Fossum , Sunetra Mendis , Sabrina E. Kemeny
IPC分类号： G11C19/28 , H01L27/146 , H01L27/148 , H01L31/0216 , H01L31/0232 , H04N5/345 , H04N5/353 , H04N5/357 , H04N5/361 , H04N5/363 , H04N5/365 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/376 , H04N5/378 , H04N9/04 , H01L27/02 , H01L27/14 , H03K5/159
CPC分类号： H01L27/1485 , G11C19/282 , G11C19/285 , H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L27/14656 , H01L27/14843 , H01L27/14887 , H04N3/155 , H04N3/1562 , H04N3/1568 , H04N5/3575 , H04N5/361 , H04N5/363 , H04N5/3658 , H04N5/374 , H04N5/3745 , H04N5/37452 , H04N5/378 , H01L31/02162 , H01L31/0232 , H04N9/045
摘要： An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

52. 发明授权

US5909026A Integrated sensor with frame memory and programmable resolution for light adaptive imaging 失效
标题翻译：具有帧存储器和可编程分辨率的集成传感器，用于光自适应成像
公开(公告)号：US5909026A
公开(公告)日：1999-06-01
申请号：US867835
申请日：1997-06-03
申请人： Zhimin Zhou , Eric R. Fossum , Bedabrata Pain
发明人： Zhimin Zhou , Eric R. Fossum , Bedabrata Pain
IPC分类号： G11C27/04 , H04N5/347 , H04N5/365 , H04N5/369 , H04N5/374 , H01J40/14
CPC分类号： H04N5/347 , G11C27/04 , H04N5/3743
摘要： An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixel patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.
摘要翻译：一种图像传感器，其可操作以根据接收的光电平改变输出空间分辨率，同时保持期望的信噪比。添加具有可调整尺寸的像素补丁中的相邻像素的信号以增加图像亮度和信噪比。一个实施例包括用于接收输入信号的传感器阵列，用于临时存储全帧的帧存储器阵列，以及用于统一的列并行信号求和的自校准列积分器的阵列。列积分器能够基本上消除固定模式噪声。

53. 发明授权

US5880691A Capacitively coupled successive approximation ultra low power analog-to-digital converter 失效
标题翻译：电容耦合逐次逼近超低功耗模数转换器
公开(公告)号：US5880691A
公开(公告)日：1999-03-09
申请号：US744957
申请日：1996-11-07
申请人： Eric R. Fossum , Zhimin Zhou , Bedabrata Pain
发明人： Eric R. Fossum , Zhimin Zhou , Bedabrata Pain
IPC分类号： H03M1/06 , H03M1/46 , H03M1/80 , H03M1/38
CPC分类号： H03M1/0682 , H03M1/466 , H03M1/804
摘要： A capacitively-coupled successive approximation analog-to-digital converter utilizes a capacitively coupled multiplying digital to analog converter to generate a succession of voltages which are compared to the input voltage to be digitized. The capacitively coupled multiplying digital to analog converter generates the required succession of analog voltage levels utilizing very low power in response to digital signals. A double-sided version of the invention processes differential inputs with improved common-non-ideality mode rejection.
摘要翻译：电容耦合逐次逼近模数转换器利用电容耦合的乘法数模转换器来产生与待数字化的输入电压相比较的一系列电压。电容耦合乘法数模转换器利用响应于数字信号的非常低的功率产生所需的连续的模拟电压电平。本发明的双面版本处理具有改进的共非理想模式拒绝的差分输入。

54. 发明授权

US5841126A CMOS active pixel sensor type imaging system on a chip 失效
标题翻译： CMOS有源像素传感器型成像系统在芯片上
公开(公告)号：US5841126A
公开(公告)日：1998-11-24
申请号：US789608
申请日：1997-01-24
申请人： Eric R. Fossum , Robert Nixon
发明人： Eric R. Fossum , Robert Nixon
IPC分类号： G11C19/28 , H01L27/146 , H01L27/148 , H01L31/0216 , H01L31/0232 , H04N3/15 , H04N9/04 , H01L27/14
CPC分类号： G11C19/282 , G11C19/285 , H01L27/14621 , H01L27/14627 , H01L27/1485 , H01L27/14887 , H04N3/155 , H04N3/1562 , H04N3/1568 , H04N5/3575 , H04N5/361 , H04N5/3658 , H04N5/3745 , H04N5/378 , H01L27/14645 , H01L31/02162 , H01L31/0232 , H04N9/045
摘要： Single substrate device is formed to have an image acquistition device and a controller. The controller on the substrate controls the system operation.
摘要翻译：单个基板装置形成为具有图像采集装置和控制器。基板上的控制器控制系统运行。

55. 发明授权

US5665959A Solid-state image sensor with focal-plane digital photon-counting pixel array 失效
标题翻译：具有焦平面数字光子计数像素阵列的固态图像传感器
公开(公告)号：US5665959A
公开(公告)日：1997-09-09
申请号：US673014
申请日：1996-07-01
申请人： Eric R. Fossum , Bedabrata Pain
发明人： Eric R. Fossum , Bedabrata Pain
IPC分类号： H01L27/146 , H01J40/14
CPC分类号： H01L27/14658 , H01L27/14609 , H01L27/14634
摘要： A solid-state focal-plane imaging system comprises an N.times.N array of high gain, low-noise unit cells, each unit cell being connected to a different one of photovoltaic detector diodes, one for each unit cell, interspersed in the array for ultralow level image detection and a plurality of digital counters coupled to the outputs of the unit cell by a multiplexer (either a separate counter for each unit cell or a row of N of counters time shared with N rows of digital counters). Each unit cell includes two self-biasing cascode amplifiers in cascade for a high charge-to-voltage conversion gain (>1 mV/e.sup.-) and an electronic switch to reset input capacitance to a reference potential in order to be able to discriminate detection of an incident photon by the photoelectron (e.sup.-) generated in the detector diode at the input of the first cascode amplifier in order to count incident photons individually in a digital counter connected to the output of the second cascode amplifier. Reseting the input capacitance and initiating self-biasing of the amplifiers occurs every clock cycle of an integratng period to enable ultralow light level image detection by the array of photovoltaic detector diodes under such ultralow light level conditions that the photon flux will statistically provide only a single photon at a time incident on any one detector diode during any clock cycle.
摘要翻译：固态焦平面成像系统包括高增益低噪声单元的NxN阵列，每个单元电池连接到不同的一个光伏检测器二极管，每个单元电池一个，散布在阵列中用于超低电平图像检测和多个数字计数器，其通过多路复用器（每个单位单元的单独计数器或与N行数字计数器共享的计数器时间的N行）耦合到单元单元的输出。每个单元单元包括两个级联级联的自偏压共源共栅放大器，用于高电荷到电压转换增益（> 1 mV / e-）和电子开关，以将输入电容复位为参考电位，以便能够区分检测通过在第一共源共栅放大器的输入端处的检测器二极管中产生的光电子（e-）来入射光子，以便在与第二共源共栅放大器的输出连接的数字计数器中单独计数入射光子。放大输入电容和启动放大器的自偏置在整个周期的每个时钟周期发生，以便在这样的超低光级条件下通过光电探测器二极管阵列实现超低光级图像检测，光子通量将统计上仅提供一个光子在任何时钟周期内一次入射到任何一个检测器二极管上。

56. 发明授权

US5471515A Active pixel sensor with intra-pixel charge transfer 失效
公开(公告)号：US5471515A
公开(公告)日：1995-11-28
申请号：US188032
申请日：1994-01-28
申请人： Eric R. Fossum , Sunetra Mendis , Sabrina E. Kemeny
发明人： Eric R. Fossum , Sunetra Mendis , Sabrina E. Kemeny
IPC分类号： G11C19/28 , H01L27/146 , H01L27/148 , H01L31/0216 , H01L31/0232 , H04N5/345 , H04N5/353 , H04N5/357 , H04N5/361 , H04N5/363 , H04N5/365 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/376 , H04N5/378 , H04N9/04 , H01L27/02 , H01L27/14 , H03K5/159
CPC分类号： H01L27/1485 , G11C19/282 , G11C19/285 , H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L27/14656 , H01L27/14843 , H01L27/14887 , H04N3/155 , H04N3/1562 , H04N3/1568 , H04N5/3575 , H04N5/361 , H04N5/363 , H04N5/3658 , H04N5/374 , H04N5/3745 , H04N5/37452 , H04N5/378 , H01L31/02162 , H01L31/0232 , H04N9/045
摘要： An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

57. 发明授权

US5386128A Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output 失效
标题翻译：具有单级CCD输出的单片In-III-V化合物半导体焦平面阵列单元
公开(公告)号：US5386128A
公开(公告)日：1995-01-31
申请号：US186185
申请日：1994-01-21
申请人： Eric R. Fossum , Thomas J. Cunningham , Timothy N. Krabach , Craig O. Staller
发明人： Eric R. Fossum , Thomas J. Cunningham , Timothy N. Krabach , Craig O. Staller
IPC分类号： H01L27/148 , H01L29/765 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14875 , H01L27/14831 , H01L29/765
摘要： A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.
摘要翻译：单片半导体成像器包括第一导电类型的铟基III-V化合物半导体单片有源层，有源层上的多个焦平面单元的阵列，每个焦平面单元包括位于该顶面上的光栅有源层，专用于包括与单片有源层单片形成的多个晶体管的焦平面单元的读出电路和与光栅和读出电路之间的有源层一体形成的单级电荷耦合器件，用于传输累积的光电荷的电荷在积分期间到读出电路的下方。光栅包括覆盖有源层的第二导电类型的薄外延半导体层和覆盖薄外延半导体层的外围部分的孔径电极，孔径电极可连接到光栅偏置电压。

58. 发明授权

US4920069A Submicron dimension compound semiconductor fabrication using thermal etching 失效
标题翻译：亚微米尺寸化学半导体制造采用热蚀刻
公开(公告)号：US4920069A
公开(公告)日：1990-04-24
申请号：US183489
申请日：1988-04-15
申请人： Eric R. Fossum , Peter D. Kirchner , George D. Pettit , Alan C. Warren , Jerry M. Woodall
发明人： Eric R. Fossum , Peter D. Kirchner , George D. Pettit , Alan C. Warren , Jerry M. Woodall
IPC分类号： H01L21/20 , H01L21/263
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02639 , Y10S148/017 , Y10S148/05 , Y10S148/065 , Y10S148/135 , Y10S148/169
摘要： Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
摘要翻译：亚微米结构的制造是通过抑制更多的挥发性元素来提供化合物晶体的蒸汽化学腐蚀来实现的，从而使挥发性较低的元件具有抗附聚和侵蚀速率限制能力，随后可以在相同的环境中随后再生长。侵蚀对晶体取向敏感。

59. 发明申请

US20120236121A1 Methods of Operating a Three-Dimensional Image Sensor Including a Plurality of Depth Pixels 审中-公开
标题翻译：包含多个深度像素的三维图像传感器的操作方法
公开(公告)号：US20120236121A1
公开(公告)日：2012-09-20
申请号：US13420862
申请日：2012-03-15
申请人： Yoon-Dong Park , Eric R. Fossum
发明人： Yoon-Dong Park , Eric R. Fossum
IPC分类号： H04N13/02
CPC分类号： H04N13/271 , H04N13/254
摘要： In a method of operating a three-dimensional image sensor according to example embodiments, modulated light is emitted to an object of interest, the modulated light that is reflected from the object of interest is detected using a plurality of depth pixels, and a plurality of pixel group outputs respectively corresponding to a plurality of pixel groups are generated based on the detected modulated light by grouping the plurality of depth pixels into the plurality of pixel groups including a first pixel group and a second pixel group that have different sizes from each other.
摘要翻译：在根据示例性实施例的操作三维图像传感器的方法中，调制光被发射到感兴趣的对象，使用多个深度像素来检测从感兴趣对象反射的调制光，并且多个通过将多个深度像素分组为包括彼此不同大小的第一像素组和第二像素组的多个像素组，基于检测到的调制光来生成分别对应于多个像素组的像素组输出。

60. 发明授权

US07916193B2 Interpolator for a CMOS image sensor using a digital register 有权
标题翻译：内置CMOS图像传感器的数字寄存器
公开(公告)号：US07916193B2
公开(公告)日：2011-03-29
申请号：US10774603
申请日：2004-02-10
申请人： Eric R. Fossum
发明人： Eric R. Fossum
IPC分类号： H04N3/14 , H04N5/335 , H04N9/04
CPC分类号： H04N5/374 , H04N9/045 , H04N2209/046
摘要： An imager has first and second photosensitive sites and an interpolator located in a semiconductor substrate. The first photosensitive site is configured to receive light having a spectral component, and the second photosensitive site is configured to measure the level of the spectral component in light received by the second photosensitive site. The interpolator is configured to estimate the level of the spectral component in the light received by the first photosensitive site based on the measurement by the second photosensitive site.
摘要翻译：成像器具有位于半导体衬底中的第一和第二光敏部位和内插器。第一感光部位被配置为接收具有光谱分量的光，并且第二感光部位被配置为测量由第二光敏部位接收的光中的光谱分量的水平。插值器被配置为基于第二感光部位的测量来估计由第一感光部位接收的光中的光谱分量的水平。

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