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51. 发明授权

US4818430A 3,6-diphenylpyridazines 失效
标题翻译： 3,6-二苯基哒嗪
公开(公告)号：US4818430A
公开(公告)日：1989-04-04
申请号：US98932
申请日：1987-09-15
申请人： Shinichi Saito , Takashi Inukai , Hiromichi Inoue , Kazutoshi Miyazawa , Kouji Ohno
发明人： Shinichi Saito , Takashi Inukai , Hiromichi Inoue , Kazutoshi Miyazawa , Kouji Ohno
IPC分类号： C07D237/08 , C09K19/34 , C09K19/52 , C07D237/00 , C07D237/02
CPC分类号： C09K19/3455 , C07D237/08
摘要： A compound useful as a constituent of liquid crystal materials for ferroelectric liquid crystal display elements and a liquid crystal composition containing the same are provided, which compound is expressed by the formula ##STR1## wherein R represents a linear or branched chain alkyl group or alkoxy group each of 1 to 20 carbon atoms, R* represents an optically active group of 3 to 16 carbon atoms and X and Y each represent H or F.

52. 发明授权

US4784792A Ferroelectric pyridine compound and liquid crystal composition 失效
标题翻译：铁电吡啶化合物和液晶组成
公开(公告)号：US4784792A
公开(公告)日：1988-11-15
申请号：US942626
申请日：1986-12-16
申请人： Hiromichi Inoue , Takashi Inukai , Kouji Ohno , Kazutoshi Miyazawa , Shinichi Saito
发明人： Hiromichi Inoue , Takashi Inukai , Kouji Ohno , Kazutoshi Miyazawa , Shinichi Saito
IPC分类号： C07D213/30 , C07D309/06 , C09K19/34 , C09K19/44 , C09K19/46 , C09K19/54 , G02F1/13 , C07D211/70
CPC分类号： C07D213/30 , C09K19/3444
摘要： A ferroelectric pyridine compound suitable as a liquid crystal for display mode utilizing ferroelectric properties and exhibiting SC* phase at a temperature somewhat higher than room temperature and a liquid crystal composition are provided, which compound is expressed by the formula ##STR1## wherein n represents an integer of 0 to 8, R.sub.1 represents an alkyl group of 2 to 18 carbon atoms, R.sub.2 represents an alkyl group of 1 to 18 carbon atoms and the symbol * indicates that C having the symbol attached thereon is an optically active carbon atom.
摘要翻译：提供一种铁电吡啶化合物，其适用于利用铁电性能和在稍高于室温的温度下显示SC *相的显示模式的液晶和液晶组合物，该化合物由式（I）表示，其中式 n表示0〜8的整数，R1表示碳原子数2〜18的烷基，R2表示碳原子数为1〜18的烷基，符号*表示其上附有符号的C为光学活性碳原子。

53. 发明授权

US4676925A Liquid crystalline biphenyl derivatives and mixtures thereof 失效
标题翻译：液晶联苯衍生物及其混合物
公开(公告)号：US4676925A
公开(公告)日：1987-06-30
申请号：US853851
申请日：1986-04-21
申请人： Hiromichi Inoue , Shinichi Saito , Kanetsugu Terashima , Takashi Inukai , Kenji Furukawa
发明人： Hiromichi Inoue , Shinichi Saito , Kanetsugu Terashima , Takashi Inukai , Kenji Furukawa
IPC分类号： C07C43/205 , C07C45/00 , C07C49/84 , C07C69/773 , C09K19/12 , C09K19/20 , C07C69/76
CPC分类号： C07C43/205 , C07C43/2055 , C07C45/004 , C07C49/84 , C09K19/126 , C09K19/2021
摘要： Chiral smectic compounds having a high response rate and being superior as a ferroelectric liquid crystalline material, and chiral smectic mixtures containing the same are provided, which compounds being expressed by the formula ##STR1## wherein X represents --CH.sub.2 --, --O-- or --CO--; n represents 0, 1 or 2; when X represents --CH.sub.2 --, Y represents R--, R--CO--, ROCO--, ##STR2## wherein R represents an alkyl group having 1 to 18 carbon atoms, and when X represents --O-- or --CO--, Y represents R; and * represents a symbol indicating an optically active carbon atom.

54. 发明授权

US4614609A Liquid crystalline biphenyl derivatives and mixtures thereof 失效
标题翻译：液晶联苯衍生物及其混合物
公开(公告)号：US4614609A
公开(公告)日：1986-09-30
申请号：US613974
申请日：1984-05-24
申请人： Hiromichi Inoue , Shinichi Saito , Kanetsugu Terashima , Takashi Inukai , Kenji Furukawa
发明人： Hiromichi Inoue , Shinichi Saito , Kanetsugu Terashima , Takashi Inukai , Kenji Furukawa
IPC分类号： C07C43/205 , C07C45/00 , C07C49/84 , C07C69/773 , C09K19/12 , C09K19/20 , C09K3/34 , C07C69/88 , G02F1/13
CPC分类号： C07C43/205 , C07C43/2055 , C07C45/004 , C07C49/84 , C09K19/126 , C09K19/2021
摘要： Chiral smectic compounds having a high response rate and being superior as a ferroelectric liquid crystalline material, and chiral smectic mixtures containing the same are provided, which compounds being expressed by the formula ##STR1## wherein X represents --CH.sub.2 --, --O-- or --CO--; n represents 0, 1 or 2; when X represents --CH.sub.2 --, Y represents R--, R--CO--, ROCO--, ##STR2## wherein R represents an alkyl group having 1 to 18 carbon atoms, and when X represents --O-- or --CO--, Y represents R; and * represents a symbol indicating an optically active carbon atom.
摘要翻译：提供了具有高响应速率并且作为铁电液晶材料优异的手性近晶化合物，以及含有它们的手性近晶混合物，该化合物由式（I）表示，其中X表示-CH 2 - ， - O - 或-CO-; n表示0,1或2; 当X代表-CH2-时，Y表示R-，R-CO-，ROCO-，其中R表示碳原子数1〜18的烷基，X表示-O-或-CO-时，Y表示 R; *表示光学活性碳原子的符号。

55. 发明授权

US4596667A Liquid crystalline compounds and mixtures thereof 失效
标题翻译：液晶化合物及其混合物
公开(公告)号：US4596667A
公开(公告)日：1986-06-24
申请号：US568060
申请日：1984-01-04
申请人： Takashi Inukai , Kenji Furukawa , Kanetsugu Terashima , Shinichi Saito
发明人： Takashi Inukai , Kenji Furukawa , Kanetsugu Terashima , Shinichi Saito
IPC分类号： C07C69/773 , C09K19/20 , C09K19/30 , C07C69/74 , C07C69/76
CPC分类号： C09K19/2021 , C09K19/3068
摘要： Novel ferroelectric liquid crystalline compounds having a superior stability and chiral, smectic liquid crystalline compositions containing at least one kind of the same are provided, which compounds are expressed by the general formula ##STR1## wherein ##STR2## represents 1,4-phenylene group ##STR3## or 1,4-trans-cyclohexane group ##STR4## R*, an optically active alkyl group; m=o, 1 or 2; n=1 or 2; X, a linear chain or branched alkyl group or alkoxy group, each having 1 to 18 carbon atoms; and when ##STR5## represents ##STR6## m=1; and n=1, X represents a linear chain or branched alkyl group having 1 to 18 carbon atoms or a linear chain alkoxy group having 11 to 18 carbon atoms.
摘要翻译：提供了具有优异稳定性的新型铁电液晶化合物和含有至少一种类型的手性的近晶液晶组合物，该化合物由通式（I）表示，其中亚苯基基团或1,4-反式环己基基团，即光学活性烷基; m = o，1或2; n = 1或2; X，各自具有1至18个碳原子的直链或支链烷基或烷氧基; 当表示 m = 1时; n = 1，X表示碳原子数为1〜18的直链状或支链状的烷基或碳原子数为11〜18的直链状的烷氧基。

56. 发明申请

US20140175490A1 SILICON-GERMANIUM LIGHT-EMITTING ELEMENT 有权
标题翻译：硅锗发光元件
公开(公告)号：US20140175490A1
公开(公告)日：2014-06-26
申请号：US14127837
申请日：2012-06-12
申请人： Yuji Suwa , Shinichi Saito , Etsuko Nomoto , Makoto Takahashi
发明人： Yuji Suwa , Shinichi Saito , Etsuko Nomoto , Makoto Takahashi
IPC分类号： H01L33/36
CPC分类号： H01L33/36 , H01L33/0054 , H01L33/06 , H01L33/20 , H01L33/34 , H01S5/0424 , H01S5/1032 , H01S5/3224
摘要： Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element.
摘要翻译：提供了一种元件结构，由此可以在发光区域内产生包围注入载体的硅锗发光元件。还提供了一种制造该结构的方法。在发光区域和电极之间，为载体产生窄通道，具体地说，是一维或二维量子限制区域。由于量子限制，在该部分中带隙打开，由此形成电子和空穴的能量势垒，并且提供类似于普通III-V族半导体激光器中的双异质结构的效果。由于不使用在普通硅工艺中使用的化学元素以外的化学元素，所以可以通过简单地控制元件的形状来廉价地制造元件。

57. 发明申请

US20130341729A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体器件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20130341729A1
公开(公告)日：2013-12-26
申请号：US13812181
申请日：2011-06-20
申请人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
发明人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
IPC分类号： H01L27/06
CPC分类号： H01L27/1203 , G11C11/412 , G11C16/0408 , H01L21/8249 , H01L21/84 , H01L23/535 , H01L27/0623 , H01L27/0705 , H01L27/092 , H01L27/1025 , H01L27/1026 , H01L27/11 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0804 , H01L29/0821 , H01L29/0847 , H01L29/0895 , H01L29/1004 , H01L29/1033 , H01L29/66825 , H01L29/66833 , H01L29/7311 , H01L29/788 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.
摘要翻译：提供了与MOSFET相比具有与常规MOSFET相同的可集成性的半导体元件，即在室温下S值小于60mV /阶的优异的开关特性。组合MOSFET和具有隧道结的隧道双极晶体管配置了一个半导体元件，其相对于栅极电压的变化（S值小于60mV /次）显示出漏极电流的突然变化，即使在低电压。

58. 发明授权

US08350301B2 Semiconductor photodiode device and manufacturing method thereof 失效
标题翻译：半导体光电二极管装置及其制造方法
公开(公告)号：US08350301B2
公开(公告)日：2013-01-08
申请号：US12838444
申请日：2010-07-17
申请人： Makoto Miura , Shinichi Saito , Youngkun Lee , Katsuya Oda
发明人： Makoto Miura , Shinichi Saito , Youngkun Lee , Katsuya Oda
IPC分类号： H01L21/00
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L31/028 , H01L31/103 , H01L31/1124 , H01L31/1808 , Y02E10/547
摘要： A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.
摘要翻译：半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

59. 发明授权

US07816702B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07816702B2
公开(公告)日：2010-10-19
申请号：US12245077
申请日：2008-10-03
申请人： Shinichi Saito , Masahiro Aoki , Hiroyuki Uchiyama , Hideo Arimoto , Noriyuki Sakuma , Jiro Yamamoto
发明人： Shinichi Saito , Masahiro Aoki , Hiroyuki Uchiyama , Hideo Arimoto , Noriyuki Sakuma , Jiro Yamamoto
IPC分类号： H01L33/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0424 , H01S5/0425 , H01S5/1237 , H01S5/125 , H01S5/18341 , H01S5/3004 , H01S5/3427 , H01S2301/176 , H01S2302/00
摘要： There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.
摘要翻译：存在具有诸如硅等离子体的硅组合半导体的硅激光器装置，其等同于由硅制成的衬底上作为基本构成元件的硅等，通过使用能够容易地形成硅激光器件的方法，通用硅工艺及其制造方法。硅激光器件是一种超薄硅激光器，其包括注入电子的第一电极单元，注入空穴的第二电极单元，与第一电极单元和第二电极单元电连接的发光单元，其中发光单元由单晶硅，并且具有与第一表面相对的第一表面（顶表面）和第二表面（底表面），通过设置在发光单元附近的由第一电介质制成的波导第一表面和第二表面的方向作为表面（100），并且在垂直于第一和第二表面的方向上减薄发光单元的厚度，以及通过交替地邻接第一电介质和第二电介质而形成的反射镜。

60. 发明授权

US07595662B2 Transmission/reception apparatus for differential signals 失效
标题翻译：差分信号发送/接收装置
公开(公告)号：US07595662B2
公开(公告)日：2009-09-29
申请号：US11879933
申请日：2007-07-19
申请人： Shinichi Saito
发明人： Shinichi Saito
IPC分类号： H03K19/0175 , H03K19/20 , H03K19/094
CPC分类号： H03K17/0414 , H03K17/687 , H03K19/01707 , H04L25/0272 , H04L25/0282
摘要： A transmission device transmits differential signals that are to be output, in the form of current signals via first and second output terminals. A first switching transistor and a first output transistor are serially connected between the grounded terminal, which is set to a fixed electric potential, and the first output terminal. A second switching transistor and a second output transistor are serially connected between the grounded terminal and the second output terminal. First and second bias transistors are provided in parallel with the first and second switching transistors, and generate a predetermined bias current. A pair of differential signals, which are to be transmitted, are input to the gates of the first and second switching transistors. The gates of the first and second output transistors are biased at a predetermined first voltage.
摘要翻译：发送装置经由第一和第二输出端子以电流信号的形式发送要输出的差分信号。第一开关晶体管和第一输出晶体管串联连接在被设置为固定电位的接地端子与第一输出端子之间。第二开关晶体管和第二输出晶体管串联连接在接地端子和第二输出端子之间。第一和第二偏置晶体管与第一和第二开关晶体管并联提供，并产生预定的偏置电流。要发送的一对差分信号被输入到第一和第二开关晶体管的栅极。第一和第二输出晶体管的栅极被偏置在预定的第一电压。

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