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51. 发明授权

US07863911B2 Test device and method for measurement of tunneling magnetoresistance properties of a manufacturable wafer by the current-in-plane-tunneling technique 有权
标题翻译：用于通过平面内隧道技术测量可制造晶片的隧道磁阻特性的测试装置和方法
公开(公告)号：US07863911B2
公开(公告)日：2011-01-04
申请号：US12006322
申请日：2007-12-31
申请人： Ying Hong , Wipul P. Jayasekara , Daniele Mauri , David J. Seagle
发明人： Ying Hong , Wipul P. Jayasekara , Daniele Mauri , David J. Seagle
IPC分类号： G01R27/08 , G01R31/08 , G01R31/02
CPC分类号： G11B5/3166 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3173 , G11B5/3906 , G11B5/3909
摘要： A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.
摘要翻译：用于测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性的组合制造晶片和测试装置。组合的可制造晶片和测试装置包括设置在基板上的隧道 - 磁阻，传感器层结构。组合的可制造晶片和测试装置还包括多个部分制造的隧道 - 磁阻传感器; 部分制造的隧道 - 磁阻传感器中的至少一个设置在多个第一位置中的一个位置。测试装置在不同于多个第一位置的第二位置处设置在基板上。测试装置允许使用平面内隧道技术测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性。

52. 发明申请

US20090165286A1 METHOD FOR MANUFACTURING AN ULTRA NARROW GAP MAGNETORESISTIVE SENSOR 有权
标题翻译：制造超窄带隙磁传感器的方法
公开(公告)号：US20090165286A1
公开(公告)日：2009-07-02
申请号：US11966106
申请日：2007-12-28
申请人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
发明人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.
摘要翻译：一种降低传感器堆叠高度的磁阻传感器的制造方法。该方法包括形成传感器结构，其顶部具有在Ru层上的Ru层和Ta层。执行退火处理以设置传感器结构的钉扎层的磁化。在完成退火处理并且不再需要Ta层之后，执行离子铣削处理以去除Ta层。

53. 发明申请

US20080285182A1 ENHANCED ANTI-PARALLEL-PINNED SENSOR USING THIN RUTHENIUM SPACER AND HIGH MAGNETIC FIELD ANNEALING 有权
标题翻译：使用薄型间隔器和高磁场退火的增强型抗并联型传感器
公开(公告)号：US20080285182A1
公开(公告)日：2008-11-20
申请号：US12172134
申请日：2008-07-11
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

54. 发明申请

US20080257714A1 METHOD OF MAKING A TMR SENSOR HAVING A TUNNEL BARRIER WITH GRADED OXYGEN CONTENT 审中-公开
标题翻译：制造具有分级氧含量的隧道式障碍物的TMR传感器的方法
公开(公告)号：US20080257714A1
公开(公告)日：2008-10-23
申请号：US11737705
申请日：2007-04-19
申请人： Tsann Lin , Daniele Mauri , Alexander M. Zeltser
发明人： Tsann Lin , Daniele Mauri , Alexander M. Zeltser
IPC分类号： C23C14/00
CPC分类号： C23C14/081 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/0042 , C23C14/025 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/307 , H01L43/12
摘要： A method for manufacturing a tunnel junction magnetoresistive sensor having improved magnetic performance and reliability. The method includes depositing a Mg—O barrier layer in a sputter deposition tool in a chamber having an oxygen concentration that changes. For example, the sputter deposition could be initiated with a first oxygen concentration in the chamber, and then, during the deposition of the barrier layer the oxygen concentration can be reduced.
摘要翻译：一种具有改进的磁性能和可靠性的隧道结磁阻传感器的制造方法。该方法包括在具有改变的氧浓度的室中的溅射沉积工具中沉积Mg-O阻挡层。例如，可以在室中以第一氧浓度开始溅射沉积，然后在阻挡层的沉积期间可以减少氧浓度。

55. 发明授权

US07239489B2 Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process 有权
标题翻译：具有通过多层工艺形成的氧化镁阻挡层的隧道磁阻（TMR）传感器
公开(公告)号：US07239489B2
公开(公告)日：2007-07-03
申请号：US10900487
申请日：2004-07-28
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/06 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/40 , H01F10/3254 , H01F10/3268 , H01F41/18 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A tunneling magnetoresistive (TMR) sensor includes a first ferromagnetic (FM) layer (e.g. a sense or reference layer), a barrier layer formed over the first FM layer, and a second FM layer (e.g. a sense or reference layer) formed over the barrier layer. The barrier layer is made of magnesium-oxide (Mg—O). The sense and reference layers of the TMR sensor exhibit controlled magnetic properties, the barrier layer provides a low junction resistance-area product, and the TMR sensor exhibits a high TMR coefficient. The junction resistance is sufficiently low so as to prevent electrostatic discharge (ESD) damage to submicron-sized TMR sensors used for magnetic recording at ultrahigh densities.
摘要翻译：隧道磁阻（TMR）传感器包括第一铁磁（FM）层（例如感测或参考层），形成在第一FM层上的阻挡层，以及形成在第一FM层上的第二FM层（例如，感测层或参考层）阻挡层。阻挡层由氧化镁（Mg-O）制成。 TMR传感器的感测和参考层表现出受控的磁性能，阻挡层提供低结电阻面积积，TMR传感器表现出高TMR系数。结电阻足够低，以防止用于超高密度磁记录的亚微米尺寸TMR传感器的静电放电（ESD）损坏。

56. 发明授权

US07228617B2 Method for fabricating a GMR read head portion of a magnetic head 失效
标题翻译：用于制造磁头的GMR读头部分的方法
公开(公告)号：US07228617B2
公开(公告)日：2007-06-12
申请号：US10672809
申请日：2003-09-29
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/127 , H01R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3903 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The GMR read head includes a GMR read sensor and a longitudinal bias (LB) stack in a read region, and the GMR read sensor, the LB stack and a first conductor layer in two overlay regions. In its fabrication process, the GMR read sensor, the LB stack and the first conductor layer are sequentially deposited on a bottom gap layer. A monolayer photoresist is deposited, exposed and developed in order to open a read trench region for the definition of a read width, and RIE is then applied to remove the first conductor layer in the read trench region. After liftoff of the monolayer photoresist, bilayer photoresists are deposited, exposed and developed in order to mask the read and overlay regions, and a second conductor layer is deposited in two unmasked side regions. As a result, side reading is eliminated and a read width is sharply defined by RIE.
摘要翻译： GMR读取头包括读取区域中的GMR读取传感器和纵向偏置（LB）堆栈，并且GMR读取传感器，LB堆叠和两个覆盖区域中的第一导体层。在其制造过程中，GMR读取传感器，LB叠层和第一导体层依次沉积在底部间隙层上。沉积，曝光和显影单层光致抗蚀剂以便打开用于定义读取宽度的读取沟槽区域，然后施加RIE以去除读取沟槽区域中的第一导体层。在剥离单层光致抗蚀剂之后，将双层光致抗蚀剂沉积，曝光和显影以掩盖读取和覆盖区域，并且将第二导体层沉积在两个未掩模的侧面区域中。结果，消除了侧读，并且通过RIE清晰地定义了读宽度。

57. 发明授权

US07133264B2 High resistance sense current perpendicular-to-plane (CPP) giant magnetoresistive (GMR) head 有权
标题翻译：高电阻感应电流垂直平面（CPP）巨磁阻（GMR）头
公开(公告)号：US07133264B2
公开(公告)日：2006-11-07
申请号：US10242956
申请日：2002-09-13
申请人： Daniele Mauri , Tsann Lin
发明人： Daniele Mauri , Tsann Lin
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/0008 , Y10T29/49032
摘要： A current-perpendicular-to-plane (CPP) spin valve (SV) sensor and fabrication method with a contiguous junction type geometry that increases sensor resistance by up to two orders of magnitude over conventional CPP GMR geometry for a particular track read-width. The superior CPP GMR coefficient (δr/R) is implemented at an increased sensor resistance by using two small self-aligned SV stacks disposed with the sense current flowing perpendicular thereto when also flowing parallel to the free layer deposition plane. With the CPP geometry of this invention, thicker conductive spacer layers may be used without unacceptable sense current shunting, so the two self-aligned SV stacks may be completed following the free-layer track-mill step. The two SV stacks may be connected in parallel or back-to-back in series to provide different sense voltages.
摘要翻译：电流垂直平面（CPP）自旋阀（SV）传感器和具有连续结型几何的制造方法，其传感器电阻比传统的CPP GMR几何尺寸提高了特定轨道读宽度两个数量级。当平行于自由层沉积平面流动时，通过使用两个小的自对准SV堆叠设置有垂直于其的感应电流，通过使用两个小的自对准SV堆叠，以增加的传感器电阻来实现优越的CPP GMR系数（deltar / R）。利用本发明的CPP几何形状，可以使用较厚的导电间隔层，而不会有不可接受的感测电流分流，因此可以在自由层跟踪磨阶段之后完成两个自对准的SV堆叠。两个SV堆叠可以串联连接或背靠背连接以提供不同的感测电压。

58. 发明授权

US07020951B2 Method of making a merged magnetic read head and write head 失效
标题翻译：合并磁读头和写头的方法
公开(公告)号：US07020951B2
公开(公告)日：2006-04-04
申请号：US10704455
申请日：2003-11-07
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/313 , G11B5/3173 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49067
摘要： An antiferromagnetic stabilization scheme is employed in a magnetic head for magnetically stabilizing a free layer of a spin valve. This is accomplished by utilizing an antiferromagnetic oxide film below a spin valve sensor in a read region and first and second lead layers in end regions and a ferromagnetic film in each of the lead layers that exchange couples to the antiferromagnetic oxide film in the end regions. The ferromagnetic films are pinned with their magnetic moments oriented parallel to an air bearing surface (ABS) of the magnetic head. The ferromagnetic film magnetostatically couples to the free layer which causes the free layer to be in a single magnetic domain state. Accordingly, when the free layer is subjected to magnetic incursions from a rotating disk in a disk drive, the free layer maintains a stable magnetic condition so that resistance changes of the free layer are not altered by differing magnetic conditions of the free layer.
摘要翻译：在磁头中采用反铁磁稳定方案，用于使自旋阀的自由层磁稳定。这通过在读取区域中的自旋阀传感器下方的反铁磁性氧化物膜和端部区域中的第一和第二引线层以及在每个引线层中的铁磁膜将端子区域中的反铁磁性氧化物膜交换而实现。铁磁膜以与磁头的空气轴承表面（ABS）平行的磁矩定向固定。铁磁膜静电耦合到自由层，这使得自由层处于单个磁畴状态。因此，当自由层受到来自盘驱动器中的旋转盘的磁性侵入时，自由层保持稳定的磁条件，使得自由层的电阻变化不会因自由层的不同磁条件而改变。

59. 发明申请

US20050180112A1 Depositing a pinned layer structure in a self-pinned spin valve 有权
标题翻译：在自锁自旋阀中沉积钉扎层结构
公开(公告)号：US20050180112A1
公开(公告)日：2005-08-18
申请号：US10782208
申请日：2004-02-18
申请人： Daniele Mauri , Alexander Zeltser
发明人： Daniele Mauri , Alexander Zeltser
IPC分类号： G11B5/39 , H05K7/20
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： The pinned layer structure in a self-pinned spin valve is deposited using a DC aligning field. The deposition of each of the Reference and Keeper layer in the pinned layer occurs within two different polarity DC aligning fields. Thus, a first portion of the Reference layer is deposited with a DC alignment field of a first polarity, i.e., either positive or negative, and a second portion of the Reference layer is deposited in a DC alignment field of opposite polarity. The Keeper layer is similarly deposited, with a first portion of the Keeper layer deposited in a first polarity DC alignment field and the second portion deposited in the opposite polarity DC alignment field. By splitting the deposition of the Reference and Keeper layers into portions using DC aligning fields the pinned layer structure is highly repeatable while providing a good thickness uniformity of the structure.
摘要翻译：使用直流对准场沉积自锁自旋阀中的钉扎层结构。参考和守护层中的每一个在被钉扎层中的沉积发生在两个不同极性的直流对准场内。因此，参考层的第一部分被沉积有第一极性的DC对准场，即正或负，并且参考层的第二部分沉积在相反极性的DC对准场中。 Keeper层类似地沉积，Keeper层的第一部分沉积在第一极性DC对准场中，而第二部分沉积在相反极性的DC对准场中。通过使用直流对准场将参考和守恒分层的沉积分裂成部分，钉扎层结构是高度可重复的，同时提供了良好的结构厚度均匀性。

60. 发明授权

US06920021B2 Sunken electrical lead defined narrow track width magnetic head 失效
标题翻译：凹陷电线定义窄轨宽磁头
公开(公告)号：US06920021B2
公开(公告)日：2005-07-19
申请号：US10229248
申请日：2002-08-26
申请人： Daniele Mauri , Tao Pan
发明人： Daniele Mauri , Tao Pan
IPC分类号： G11B5/012 , G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3116 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： In fabricating the magnetic head, a first magnetic shield layer (S1) is fabricated upon a substrate base, followed by a thin first insulation layer (G1). A photoresist mask is fabricated upon the G1 layer and electrical lead recesses are milled through the G1 layer and into the S1 layer. An insulation layer is deposited into the electrical lead recesses, followed by the fabrication of electrical leads within the recesses. The photoresist is removed and a magnetoresistive (MR) sensor is subsequently fabricated on top of the G1 layer, such that portions of the MR sensor are fabricated on top of portions of the electrical leads. Hard bias elements are then fabricated at outboard edges of the MR sensor. A thin second insulation layer (G2) is fabricated on top of the MR sensor and hard bias elements, and a second magnetic shield layer (S2) is fabricated on top of the G2 layer.
摘要翻译：在制造磁头时，在衬底基底上制造第一磁屏蔽层（S1），随后是薄的第一绝缘层（G 1）。在G 1层上制造光致抗蚀剂掩模，并且将电引线凹槽通过G 1层研磨并进入S1层。绝缘层沉积到电引线凹槽中，随后在凹槽内制造电引线。去除光致抗蚀剂，随后在G 1层的顶部上制造磁阻（MR）传感器，使得MR传感器的部分制造在电引线的部分的顶部。然后在MR传感器的外侧边缘处制造硬偏置元件。在MR传感器和硬偏置元件的顶部制造薄的第二绝缘层（G 2），并且在G 2层的顶部上制造第二磁屏蔽层（S 2）。

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