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    • 58. 发明授权
    • Electron emission device
    • 电子发射装置
    • US07777420B2
    • 2010-08-17
    • US11347329
    • 2006-02-03
    • Sang-Ho JeonByong-Gon LeeSang-Jo Lee
    • Sang-Ho JeonByong-Gon LeeSang-Jo Lee
    • G09G3/10H01J1/62
    • H01J29/467H01J31/127H01J2329/4613
    • An electron emission device includes a first substrate, a second substrate facing the first substrate, a scan electrode formed on the first substrate and having a width Sv, and a data electrode formed on the first substrate perpendicular to and crossing the scan electrode at a crossed region. A unit pixel is disposed in an area of the crossed region and has a pitch Pv. An insulating layer is disposed between the scan electrodes and the data electrodes. An electron emission region is electrically coupled the scan electrode or the data electrode, and the scan electrode and the unit pixel satisfy the following condition: 0.5≦Sv/Pv≦0.95.
    • 电子发射器件包括第一衬底,面对第一衬底的第二衬底,形成在第一衬底上并具有宽度Sv的扫描电极,以及形成在第一衬底上的数据电极,其垂直于并交叉扫描电极 地区。 单位像素设置在交叉区域的区域中并具有间距Pv。 绝缘层设置在扫描电极和数据电极之间。 电子发射区电连接扫描电极或数据电极,扫描电极和单位像素满足以下条件:0.5≦̸ Sv / Pv≦̸ 0.95。
    • 59. 发明授权
    • Method for crystallizing a silicon substrate
    • 硅衬底结晶方法
    • US09087697B2
    • 2015-07-21
    • US13890476
    • 2013-05-09
    • Sung-Ho KimMin-Hwan ChoiMin-Ji BaekSang-Kyung LeeSang-Ho JeonJong-Moo Huh
    • Sung-Ho KimMin-Hwan ChoiMin-Ji BaekSang-Kyung LeeSang-Ho JeonJong-Moo Huh
    • H01L21/02H01L21/66
    • H01L21/02686H01L21/02532H01L22/12H01L22/20
    • A method for crystallizing a silicon substrate includes manufacturing a crystallized silicon test substrate that is crystallized by scanning excimer laser annealing beams with different energy densities on respective areas of an amorphous silicon test substrate, irradiating a surface of the crystallized silicon test substrate using a light source, and measuring reflectivity corresponding to the respective areas of the crystallized silicon test substrate in a visible light wavelength range, extracting average reflectivities of the respective areas of the crystallized silicon test substrate in wavelength ranges corresponding to respective colors, calculating an optimum energy density (OPED) index per energy density by using a value acquired by subtracting average reflectivity of red-based colors from average reflectivity of blue-based colors, selecting an optimal energy density, and crystallizing an amorphous silicon substrate using the optimal energy density.
    • 一种硅衬底的结晶方法包括:制造结晶硅测试衬底,其通过在非晶硅测试衬底的各个区域上扫描具有不同能量密度的准分子激光退火光束而被结晶,使用光源照射结晶硅测试衬底的表面 ,并且在可见光波长范围内测量对应于结晶硅测试衬底的各个区域的反射率,提取结晶硅测试衬底的各个区域的平均反射率,其对应于各种颜色的波长范围,计算最佳能量密度(OPED )通过使用通过从基于蓝色的颜色的平均反射率减去红色颜色的平均反射率而获得的值,选择最佳能量密度,并使用最佳能量密度结晶非晶硅衬底而获得的值。
    • 60. 发明申请
    • Electron emission device
    • 电子发射装置
    • US20060113917A1
    • 2006-06-01
    • US11291256
    • 2005-11-30
    • Byong-Gon LeeSang-Ho Jeon
    • Byong-Gon LeeSang-Ho Jeon
    • G09G3/10
    • H01J29/467G09G3/22H01J31/127H01J63/02
    • An electron emission device is provided including a first substrate and a second substrate facing each other and separated from each other by a predetermined distance. An electron emission unit is disposed on the first substrate, and a light emission unit is disposed on a surface of the second substrate facing the first substrate. A grid electrode is disposed between the first substrate and the second substrate, and has a hole region with a plurality of electron beam-guide holes and a no-hole region surrounding the hole region. The first substrate has a first active area and a first outer portion. The second substrate has a second active area and a second outer portion. The grid electrode has a larger area than the first active area and the second active area, and the no-hole region is disposed corresponding to the first outer portion.
    • 提供一种电子发射装置,包括彼此面对并且彼此分开预定距离的第一基板和第二基板。 电子发射单元设置在第一基板上,并且发光单元设置在与第一基板相对的第二基板的表面上。 栅格电极设置在第一基板和第二基板之间,并且具有多个电子束引导孔和围绕孔区域的无孔区域的孔区域。 第一基板具有第一有源区和第一外部。 第二基板具有第二有源区和第二外部。 格栅电极具有比第一有源区域和第二有源区域大的面积,并且对应于第一外部部分设置无孔区域。