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51. 发明申请

US20100148174A1 GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufacturing GaN Epitaxial Wafer and Semiconductor Devices 审中-公开
标题翻译： GaN外延晶片和半导体器件，以及制造GaN外延晶片和半导体器件的方法
公开(公告)号：US20100148174A1
公开(公告)日：2010-06-17
申请号：US12518884
申请日：2008-09-19
申请人： Seiji Nakahata , Kensaku Motoki
发明人： Seiji Nakahata , Kensaku Motoki
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01S5/32341 , C30B29/406 , H01L21/02387 , H01L21/02458 , H01L21/0254 , H01L21/02656 , H01S5/0042 , H01S5/2201 , H01S2301/173
摘要： Affords GaN epitaxial wafers designed to improve production yields, as well as semiconductor devices utilizing such GaN epitaxial wafers, and methods of manufacturing such GaN epitaxial wafers and semiconductor devices.A GaN epitaxial wafer manufacturing method involving the present invention includes a first GaN layer formation step of epitaxially growing a first GaN layer onto a substrate, a pit formation step, following the first GaN layer formation step, of forming pits in the front side of the substrate, and a second GaN layer formation step, following the pit-formation step, of epitaxially growing a second GaN layer onto the first GaN layer, and therefore controls cracking to a minimum and improves production yields.
摘要翻译：提供设计用于提高生产率的GaN外延晶片，以及利用这种GaN外延晶片的半导体器件，以及制造这种GaN外延晶片和半导体器件的方法。涉及本发明的GaN外延晶片制造方法包括：在基板上外延生长第一GaN层的第一GaN层形成步骤，在第一GaN层形成步骤之后的凹坑形成步骤，在第一GaN层形成步骤的前侧形成凹坑衬底和第二GaN层形成步骤，在凹坑形成步骤之后，将第二GaN层外延生长到第一GaN层上，从而将裂纹控制到最小并提高生产率。

52. 发明申请

US20060012011A1 Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method 审中-公开
标题翻译：用于加工氮化物半导体晶体表面的Mehtod和通过这种方法获得的氮化物半导体晶体
公开(公告)号：US20060012011A1
公开(公告)日：2006-01-19
申请号：US10535741
申请日：2004-06-03
申请人： Seiji Nakahata , Ryu Hirota , Keiji Ishibashi , Takatomo Sasaki , Yusuke Mori
发明人： Seiji Nakahata , Ryu Hirota , Keiji Ishibashi , Takatomo Sasaki , Yusuke Mori
IPC分类号： H01L21/28 , H01L29/20
CPC分类号： C30B29/403 , C30B29/38 , C30B33/00 , C30B33/10 , H01L21/30612
摘要： A method of processing a surface of a nitride semiconductor crystal, wherein a surface of a nitride semiconductor crystal is brought into contact with a liquid containing at least Na, Li or Ca as a processing solution. In the method, the processing solution can be a liquid containing at least Na, having an Na content of 5-95 mol %. The processing solution can be a liquid containing at least Li, having an Li content of 5-100 mol %. A nitride semiconductor crystal having a maximum depth of a surface scratch of at most 0.01 μm or an average thickness of a damaged layer of at most 2 μm. Consequently, a method of processing a surface of a nitride semiconductor crystal with a decreased depth of a surface scratch or a decreased thickness of a damaged layer, and a nitride semiconductor crystal obtained with the method can be provided.
摘要翻译：一种处理氮化物半导体晶体的表面的方法，其中使氮化物半导体晶体的表面与至少含有Na，Li或Ca的液体作为处理溶液接触。在该方法中，处理溶液可以是含有至少Na，Na含量为5-95mol％的液体。处理液可以是含有Li含量为5〜100摩尔％的至少Li的液体。具有至多0.01μm的表面划痕的最大深度或至多2μm的损伤层的平均厚度的氮化物半导体晶体。因此，可以提供一种利用该方法获得的具有降低的表面划痕深度或损伤层厚度减小的氮化物半导体晶体的表面的处理方法。

53. 发明申请

US20080283968A1 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 有权
标题翻译： III-氮化物半导体晶体及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20080283968A1
公开(公告)日：2008-11-20
申请号：US11579645
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： H01L29/20 , C03B9/00
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
摘要翻译：一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

54. 发明申请

US20080022921A1 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device 有权
标题翻译：第III族氮化物晶体及其制造方法，III族氮化物晶体基板和半导体器件
公开(公告)号：US20080022921A1
公开(公告)日：2008-01-31
申请号：US11628253
申请日：2005-04-15
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B29/38 , C30B11/06 , C30B9/10 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

55. 发明授权

US07905958B2 Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device 有权
标题翻译： III族氮化物半导体晶体及其制造方法以及III族氮化物半导体器件
公开(公告)号：US07905958B2
公开(公告)日：2011-03-15
申请号：US11579645
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B21/02
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
摘要翻译：一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

56. 发明申请

US20050164419A1 Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device 有权
标题翻译： III族氮化物晶体基板，其制造方法和III族氮化物半导体器件
公开(公告)号：US20050164419A1
公开(公告)日：2005-07-28
申请号：US10905845
申请日：2005-01-24
申请人： Ryu Hirota , Seiji Nakahata , Masaki Ueno
发明人： Ryu Hirota , Seiji Nakahata , Masaki Ueno
IPC分类号： H01L21/205 , C30B19/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/208 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： C30B9/10 , C30B7/10 , C30B19/02 , C30B25/18 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02625
摘要： Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107 dislocations/cm2.
摘要翻译：提供位错密度低且制造成本低的III族氮化物晶体基板，制造这种基板的方法，以及掺入III族氮化物晶体基板的III族氮化物半导体器件。 III族氮化物晶体衬底制造方法包括：通过液相外延将第一III族氮化物晶体（2）生长到基底衬底（1）上的步骤; 以及通过气相外延将第二III族氮化物晶体（3）生长到第一III族氮化物晶体（2）上的步骤。通过这种制造方法制造的III族氮化物晶体基板的位错密度为1×10 7位错/ cm 2。

57. 发明授权

US08002892B2 Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device 有权
标题翻译： III族氮化物晶体衬底，其制造方法和III族氮化物半导体器件
公开(公告)号：US08002892B2
公开(公告)日：2011-08-23
申请号：US10905845
申请日：2005-01-24
申请人： Ryu Hirota , Seiji Nakahata , Masaki Ueno
发明人： Ryu Hirota , Seiji Nakahata , Masaki Ueno
IPC分类号： C30B25/02
CPC分类号： C30B9/10 , C30B7/10 , C30B19/02 , C30B25/18 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02625
摘要： Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107 dislocations/cm2.
摘要翻译：提供位错密度低且制造成本低的III族氮化物晶体基板，制造这种基板的方法，以及掺入III族氮化物晶体基板的III族氮化物半导体器件。 III族氮化物晶体衬底制造方法包括：通过液相外延将第一III族氮化物晶体（2）生长到基底衬底（1）上的步骤; 以及通过气相外延将第二III族氮化物晶体（3）生长到第一III族氮化物晶体（2）上的步骤。通过这种制造方法制造的III族氮化物晶体基板的位错密度为1×10 7位错/ cm 2。

58. 发明申请

US20070296061A1 Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 审中-公开
标题翻译： III族氮化物晶体基板及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20070296061A1
公开(公告)日：2007-12-27
申请号：US11578242
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota , Seiji Nakahata
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota , Seiji Nakahata
IPC分类号： H01L29/20 , C03B17/00
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

59. 发明申请

US20050098090A1 Group III Nitride Crystal, Method of Its Manufacture, and Equipment for Manufacturing Group III Nitride Crystal 审中-公开
标题翻译： III族氮化物晶体，其制造方法，以及第III族氮化物晶体的制造设备
公开(公告)号：US20050098090A1
公开(公告)日：2005-05-12
申请号：US10904249
申请日：2004-11-01
申请人： Ryu Hirota , Seiji Nakahata
发明人： Ryu Hirota , Seiji Nakahata
IPC分类号： C30B29/38 , C30B9/00 , C30B9/12 , C30B17/00 , C30B29/40 , C30B1/00 , C30B11/00 , C30B21/02 , C30B28/06
CPC分类号： C30B9/00 , C30B29/403 , C30B29/406
摘要： Affords Group III nitride crystals whose crystal growth rate is extensive, methods of their manufacture, and equipment for manufacturing such Group III nitride crystals. The manufacturing methods include: a melt-formation step, within a reaction vessel (21), of forming around a seed crystal (2) a melt (1) containing at least a Group III element and a catalyst; and a crystal-growth step of supplying a nitrogen-containing substance (3) to the melt (1) to grow a Group III nitride crystal (4) onto the seed crystal (2); characterized in controlling temperature so that in the crystal-growth step, the temperature of the melt (1) lowers from the interface (13) between the melt (1) and the nitrogen-containing substance (3), through to the interface (12) between the melt (1) and the seed crystal (2) or to the interface (14) between the melt (1) and the Group III nitride crystal (4) having grown onto the seed crystal (2).
摘要翻译：提供其晶体生长速率广泛的III族氮化物晶体，其制造方法以及用于制造这种III族氮化物晶体的设备。制造方法包括：在反应容器（21）内形成围绕晶种（2）形成含有至少III族元素和催化剂的熔体（1）的熔融形成步骤; 以及向所述熔体（1）供给含氮物质（3）以在所述晶种（2）上生长III族氮化物晶体（4）的晶体生长步骤。其特征在于控制温度使得在晶体生长步骤中，熔体（1）的温度从熔体（1）和含氮物质（3）之间的界面（13）降低到界面（12））和熔融物（1）和生长在晶种（2）上的III族氮化物晶体（4）之间的界面（14）之间的熔融物（1）和晶种（2）之间的界面（14）。

60. 发明授权

US08038794B2 Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device 有权
标题翻译： III族氮化物晶体，其制造方法，III族氮化物晶体衬底和半导体器件
公开(公告)号：US08038794B2
公开(公告)日：2011-10-18
申请号：US11628253
申请日：2005-04-15
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B29/38
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

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