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51. 发明授权

US5894325A Solid image pickup unit and video camera employing same 失效
标题翻译：固体摄像单元和采用相机的摄像机
公开(公告)号：US5894325A
公开(公告)日：1999-04-13
申请号：US659311
申请日：1996-06-06
申请人： Kazuya Yonemoto
发明人： Kazuya Yonemoto
IPC分类号： H04N5/232 , H04N5/335 , H04N5/341 , H04N5/345 , H04N5/351 , H04N5/353 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/376
CPC分类号： H04N5/23248 , H04N3/1562 , H04N5/23258 , H04N5/23274 , H04N5/3454
摘要： A solid image pickup unit is provided which is capable of preventing the brightness of a reproduced screen from changing (a change in a storage time) due to hand shake correction and which is thus able to obtain a natural photographed image. An X-Y address-type solid image pickup unit having a hand shake correction function includes a reading vertical scanner for reading in sequence pixel information for each scanning line while performing vertical scanning and for determining the position of an image pickup area in the vertical direction within a photoreceiving surface on the basis of hand shake information, an electronic shutter scanner for resetting the pixel transistors in correspondence with the position of the image pickup area in the vertical direction when a predetermined storage time is reached whose upper limit is set to be shorter than the time corresponding one field, and a timing generator for supplying scanning clocks .phi.VCK and .phi.SCK and start pulses .phi.VS and .phi.SS to these scanners and for controlling the generation timing of the start pulses .phi.VS and .phi.SS on the basis of the hand shake information from an acceleration sensor.
摘要翻译：提供了能够防止再现画面的亮度由于手抖动校正而改变（存储时间的改变）并且因此能够获得自然拍摄图像的固体图像拾取单元。具有手抖校正功能的XY地址型固体摄像单元包括读取垂直扫描器，用于在执行垂直扫描期间按顺序读取每条扫描线的像素信息，并用于确定在垂直方向上的图像拾取区域的位置基于手抖信息的光接收表面;电子快门扫描器，用于在达到预定的存储时间时将像素晶体管与垂直方向上的图像拾取区域的位置相对应地复位，其上限被设置为短于时间对应的一个场，以及定时发生器，用于向这些扫描器提供扫描时钟phi VCK和phi SCK以及开始脉冲phi VS和phi SS，并且用于基于手来控制开始脉冲phi VS和phi SS的生成定时从加速度传感器抖动信息。

52. 发明授权

US5796431A Solid-state image pickup device and driving method thereof 失效
标题翻译：固体摄像装置及其驱动方法
公开(公告)号：US5796431A
公开(公告)日：1998-08-18
申请号：US687998
申请日：1996-07-29
申请人： Kazuya Yonemoto
发明人： Kazuya Yonemoto
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/369 , H04N5/372 , H04N5/374 , H04N3/14
CPC分类号： H04N5/378 , H04N5/3658 , H04N5/3745
摘要： To provide a solid-state image pickup device and a driving method thereof with which it is possible to remove fixed pattern noise without making the scale of circuits around the device large. First and second load capacitors 16a and 16b having the same capacitance are provided, MOS transistors 15a, 15b, which are first and second operating switches, are connected between a vertical signal line 13 and first ends of the first and second load capacitors 16a and 16b, a MOS transistor 18, which is a common operating switch, is connected between second ends of the first and second load capacitors 16a and 16b and a reference potential point (in this example, ground) and MOS transistors 17a and 17b, which are first and second horizontal switches, are connected between the second ends of the first and second load capacitors 16a and 16b and a horizontal signal line 19 and a bias line 20 at a predetermined potential.
摘要翻译：为了提供固态图像拾取装置及其驱动方法，可以在不使装置周围的电路规模变大的情况下去除固定图案噪声。提供具有相同电容的第一和第二负载电容器16a和16b，作为第一和第二操作开关的MOS晶体管15a，15b连接在垂直信号线13和第一和第二负载电容器16a和16b的第一端之间，作为公共操作开关的MOS晶体管18连接在第一和第二负载电容器16a和16b的第二端和作为第一和第二负载电容器16a和16b的参考电位点（在该示例中为接地）和MOS晶体管17a和17b之间和第二水平开关连接在第一和第二负载电容器16a和16b的第二端以及预定电位的水平信号线19和偏置线20之间。

53. 发明授权

US5473183A Semiconductor device of a first conductivity type which has a first well of a second conductivity type formed therein and a second well of the first conductivity type formed in the first well and a pair of MOSFET formed in the first and second wells 失效
标题翻译：第一导电类型的半导体器件，其具有形成在其中的第二导电类型的第一阱和形成在第一阱中的第一导电类型的第二阱和形成在第一阱和第二阱中的一对MOSFET
公开(公告)号：US5473183A
公开(公告)日：1995-12-05
申请号：US301980
申请日：1994-09-07
申请人： Kazuya Yonemoto
发明人： Kazuya Yonemoto
IPC分类号： H01L27/092 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L27/0928 , Y10S257/901
摘要： The present invention is directed to a CMOS inverter in which an N-FET (Qn) formed of an N-type source region (2S), a drain region (2D) and a gate electrode (2G) and a P-FET (Qp) formed of a P-type source region (3S), a drain region (3D) and a gate electrode (3G) are formed on an N-type silicon substrate (1n). A first well region (4p) is formed under the N-FET (Qn) and P-FET (Qp). Further, an N-type well region (5n) is formed on the P-FET (Qp) within the first well region (4p). Thus, an influence exerted by a back-gate effect from the substrate can be prevented completely, whereby a phase displacement relative to a pulse response to a CMOS peripheral logic circuit and a malfunction can be avoided.
摘要翻译：本发明涉及一种CMOS反相器，其中由N型源极区（2S），漏极区（2D）和栅电极（2G）和P-FET（Qp）形成的N-FET（Qn））形成在P型源极区（3S），漏极区（3D）和栅极（3G）上。在N-FET（Qn）和P-FET（Qp）之下形成第一阱区（4p）。此外，在第一阱区（4p）内的P-FET（Qp）上形成有N型阱区（5n）。因此，可以完全防止来自基板的背栅效应的影响，从而可以避免相对于对CMOS外围逻辑电路的脉冲响应的相移和故障。

54. 发明授权

US5270531A Source follower circuit for image sensor 失效
标题翻译：图像传感器源跟踪器电路
公开(公告)号：US5270531A
公开(公告)日：1993-12-14
申请号：US996146
申请日：1992-12-23
申请人： Kazuya Yonemoto
发明人： Kazuya Yonemoto
IPC分类号： H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/378 , H01J40/14
CPC分类号： H04N3/155 , H04N3/1512
摘要： The present invention is directed to a solid state image sensing device which can reduce a consumed amount of an electric power.During a horizontal blanking period, a vertical scanning pulse of 5 V is supplied to a vertical selection line (2A) from a vertical scanning circuit (3). In synchronism therewith, a voltage (.phi.I) is changed from 5 V to 0 V and a voltage (.phi.VGG) is changed from 0 V to 5 V. Thus, a source switch transistor (6) is turned off and a load transistor (9) is turned on, whereby a source follower circuit formed by a pixel transistor (12) and the load transistor (9) of a unit pixel (1) is set in the operable state to read an electrical signal accumulated in the unit pixel (1). According to the present invention, the load transistor (9) is turned on by the application of the voltage (.phi.VGG) only during the electrical signal read-out period and the dark signal read-out period of the unit pixel within the horizontal blanking period. Since a current is flowed to the pixel transistor (12) by a power supply (7) only during this period, a consumed electric power can be reduced considerably as compared with the prior art.

55. 发明授权

US5233430A Solid state imager wherein the horizontal transfer is accomplished with first and second clock voltages and the cross-over point between the voltages is above the medium level between the peak values of the voltages 失效
标题翻译：在第一和第二个时钟电压下，水平传输的固态成像器和电压之间的交点超过电压峰值之间的中间电平
公开(公告)号：US5233430A
公开(公告)日：1993-08-03
申请号：US821827
申请日：1992-01-17
申请人： Yoji Takamura , Kazuya Yonemoto , Naoki Nishi , Manabu Ishibashi
发明人： Yoji Takamura , Kazuya Yonemoto , Naoki Nishi , Manabu Ishibashi
IPC分类号： G11C27/04 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/372 , H04N5/378
CPC分类号： H04N5/3591 , G11C27/04
摘要： A solid state imager is comprised of an imager unit composed of a plurality of sensitive units arrayed in the unit of pixels in a two-dimensional manner in the horizontal and vertical directions and vertical transfer units for transferring electric charges read-out from the sensitive units in the vertical direction at every vertical column, and a horizontal transfer unit formed of charge transfer unit group (8.sub.1, 8.sub.2, 8.sub.3, . . . ) of a plurality of bits in which a clock voltage (.phi..sub.H1) is applied to a first charge transfer unit group (8.sub.1, 8.sub.3. . . ) at every other bit including the charge transfer unit (8.sub.1) of a final bit and a clock voltage (.phi..sub.H2) is applied to a second charge transfer unit group (8.sub.2, 8.sub.4, . . . ) at every other bit of the remaining bit to transfer the electric charges supplied from the image unit in the horizontal direction, wherein a cross point between a leading edge of the clock voltage (.phi..sub.H1) and a trailing edge of the clock voltage (.phi..sub.H2) is set to be a level higher than an intermediate level between peak values of the clock voltages. Thus, a so-called electric charge flooding phenomenon from the final bit (final stage) of the horizontal transfer unit to the output circuit unit can be prevented and therefore the dynamic range of the final bit can be increased relatively.

56. 发明授权

US5202907A Solid-state image sensor output MOSFET amplifier with MOSFET load 失效
标题翻译：具有MOSFET负载的固态图像传感器输出MOSFET放大器
公开(公告)号：US5202907A
公开(公告)日：1993-04-13
申请号：US892930
申请日：1992-06-03
申请人： Kazuya Yonemoto
发明人： Kazuya Yonemoto
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/335 , H04N5/369 , H04N5/3728
CPC分类号： H01L29/76816 , H01L27/14831
摘要： There is provided a solid-state image sensor which can optimize the I-V characteristics of MOS transistors on drive side and load side, and which can improve the sensitivity by maximizing the small-signal AC gain of a source follower amplifier. According to one embodiment of the invention, a CCD solid-state image sensor has a floating diffusion type charge detecting amplifier composed of at least one drive side MOS transistor and at least one load side MOS transistor. In a substrate of one conductivity type, there are formed two wells of the opposite conductivity type independently. The drive side MOS transistor is formed in the first well which is deeper from the top surface of the semiconductor substrate. The load side MOS transistor is formed in the shallower second well. It is possible to further improve the AC gain by depleting or neutralizing the first well for the drive MOS transistor, and at the same time neutralizing the second well for the load MOS transistor.

57. 发明授权

US08384818B2 Solid-state imaging device including arrays of optical elements and photosensitive cells 有权
标题翻译：固态成像装置包括光学元件阵列和感光细胞
公开(公告)号：US08384818B2
公开(公告)日：2013-02-26
申请号：US12671083
申请日：2009-06-10
申请人： Masao Hiramoto , Kazuya Yonemoto , Seiji Nishiwaki , Masaaki Suzuki , Yoshiaki Sugitani , Shinichi Wakabayashi
发明人： Masao Hiramoto , Kazuya Yonemoto , Seiji Nishiwaki , Masaaki Suzuki , Yoshiaki Sugitani , Shinichi Wakabayashi
IPC分类号： H04N3/14 , H04N5/335 , H04N9/04 , H04N9/07 , H04N5/225
CPC分类号： H04N5/2254 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H04N5/33 , H04N9/045
摘要： Light-splitting elements are arranged in at least two columns and two rows to form two pairs 1a, 1b and 1c, 1d. Each element splits incident light into light rays and makes them fall on a portion of a photosensing section right under itself and an adjacent photosensitive cell. The element 1a splits the incident light so that a primary color ray C1 and its complementary color ray C1′ enter an adjacent cell 2b and an underlying cell 2a, respectively. The element 1b makes a primary color ray C2 and its complementary color ray C2′ enter an underlying cell 2a and an adjacent cell 2a, respectively. The element 1c does the same as the element 1b. And the element 1d makes a primary color ray C3 and its complementary color ray C3′ enter an adjacent cell 2c and an underlying cell 2d, respectively. These photosensitive cells 2 perform photoelectric conversion, thereby outputting an electrical signal representing the intensity of the incident light. By carrying out simple calculations between the outputs of these cells, a color signal and a luminance signal are generated.
摘要翻译：光分离元件以至少两列和两列排列以形成两对1a，1b和1c，1d。每个元件将入射光分成光线并使它们落在其本身正下方的光敏部分的一部分和相邻的感光单元上。元件1a分割入射光，使得原色光线C1及其互补色光线C1'分别进入相邻的单元2b和下面的单元2a。元件1b使原色光线C2和它的互补色射线C2'分别进入下面的单元2a和相邻单元2a。元件1c与元件1b相同。并且元件1d使原色光线C3和其互补色光线C3'分别进入相邻单元格2c和下面的单元格2d。这些感光单元2进行光电转换，从而输出表示入射光强度的电信号。通过在这些单元的输出之间进行简单的计算，生成彩色信号和亮度信号。

58. 发明申请

US20100182477A1 SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20100182477A1
公开(公告)日：2010-07-22
申请号：US12377764
申请日：2007-08-10
申请人： Kazuya Yonemoto
发明人： Kazuya Yonemoto
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H01L27/14812 , H01L27/14837 , H04N5/3452 , H04N5/3456 , H04N5/3595 , H04N5/37213 , H04N5/3728
摘要： In a solid-state imaging device, photodiodes (12) are classified into a plurality of fields, and each one of driving pulses (V1A, V1B, V2, V3A, V3B, V4) is applied to corresponding one of the photodiodes via a plurality of electrodes (17). Of the electrodes, a plurality of electrodes used to control readout of the signal charges from the photodiodes to the charge-coupled devices (11) are interconnected such that each one of a plurality of independent driving pulses (V1A, V1B, V3A, V3B) is applied to the corresponding one of the electrodes in accordance with the number of fields into which the photodiodes are classified.
摘要翻译：在固态成像装置中，光电二极管（12）分为多个场，并且驱动脉冲（V1A，V1B，V2，V3A，V3B，V4）中的每一个经由多个的电极（17）。在电极中，用于控制从光电二极管到电荷耦合器件（11）的信号电荷的读出的多个电极互连，使得多个独立的驱动脉冲（V1A，V1B，V3A，V3B）中的每一个根据光电二极管分类的场数，将其施加到相应的一个电极。

59. 发明授权

US07719594B2 Solid-state imaging device with OB region and camera provided with the same 有权
标题翻译：具有OB区域和相机的固态成像设备
公开(公告)号：US07719594B2
公开(公告)日：2010-05-18
申请号：US11533561
申请日：2006-09-20
申请人： Yoshiaki Kato , Kazuya Yonemoto , Tsuyoshi Hasuka
发明人： Yoshiaki Kato , Kazuya Yonemoto , Tsuyoshi Hasuka
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H01L27/14603 , H04N5/23245
摘要： A solid-state imaging device, and a camera provided with this device, that can output high quality images at high speed are realized by preventing improper OB clamping in a solid-state imaging device that performs pixel mixing in the horizontal direction. Vertical final stages, which are the transfer stages closest to a horizontal transfer component 4, are provided with provided with independent transfer electrodes V3-1, V3-2, V3-3, V6-1, V5-2, and V5-3 that are independent of other columns in a region between the horizontal transfer component and an effective pixel region, and a common transfer electrode that is common to all of the columns in the region between the horizontal transfer component 4 and the OB region. Further, in the vertical final stages, the entire region between the OB region and the horizontal transfer component, or the region minus openings formed for the wiring of V3-1 and V5-1 in the columns closest to the effective pixel region, is covered with a light blocking film.
摘要翻译：通过防止在水平方向上执行像素混合的固态成像装置中的不正确的OB钳位，实现了可以高速输出高质量图像的固态成像装置和设置有该装置的相机。具有最靠近水平传递部件4的传送级的垂直末级设置有独立的传送电极V3-1，V3-2，V3-3，V6-1，V5-2和V5-3，在水平传送部件和有效像素区域之间的区域中的其他列独立，以及在水平传送部件4和OB区域之间的区域中的所有列共同的公共传送电极。此外，在垂直最终阶段中，覆盖OB区域和水平传递部件之间的整个区域，或者减去最靠近有效像素区域的列中V3-1和V5-1的布线形成的开口的区域具有遮光膜。

60. 发明申请

US20070222876A1 Solid-State Image Pickup Device and Sampling Circuit 审中-公开
标题翻译：固态图像拾取装置和采样电路
公开(公告)号：US20070222876A1
公开(公告)日：2007-09-27
申请号：US11631796
申请日：2005-06-07
申请人： Kazuya Yonemoto
发明人： Kazuya Yonemoto
IPC分类号： H04N5/335
CPC分类号： H04N5/3742 , H04N5/3575 , H04N5/3658
摘要： To provide a solid-state image pickup device which prevents the generation of fixed pattern noise having a correlation in a column direction (or a row direction) caused by non-uniformity of a sampling circuit itself. The solid-state image pickup device includes a sampling circuit for sampling a signal from a photodiode. The sampling circuit includes: a clamp capacitor CCL for transmitting only an AC component of the signal; a sampling capacitor CSH for holding the signal transmitted via the clamp capacitor CCL; and a sampling MOS switch M12 for transmitting the signal to the sampling capacitor CSH or blocking the transmission. A ratio between the clamp capacitor CCL capacity and the sampling capacitor CSH capacity is a fixed value determined by a capacity unique to the sampling MOS switch M12.
摘要翻译：提供一种固态图像拾取装置，其防止由采样电路本身的不均匀性引起的在列方向（或行方向）上具有相关性的固定图案噪声的产生。固态图像拾取装置包括用于对来自光电二极管的信号进行采样的采样电路。采样电路包括：用于仅发送信号的AC分量的钳位电容器C CL; 用于保持经由钳位电容器C CL发送的信号的采样电容器C 以及用于将信号发送到采样电容器C SH或阻塞发送的采样MOS开关M 12。钳位电容C SUB电容与采样电容C SUB电容之间的比是由采样MOS开关M 12所特有的电容确定的固定值。

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