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51. 发明申请

US20070196575A1 Composite metal films and carbon nanotube fabrication 有权
标题翻译：复合金属薄膜和碳纳米管制作
公开(公告)号：US20070196575A1
公开(公告)日：2007-08-23
申请号：US11359165
申请日：2006-02-21
申请人： Juan Dominguez , Valery Dubin , Florian Gstrein , Michael Goldstein
发明人： Juan Dominguez , Valery Dubin , Florian Gstrein , Michael Goldstein
IPC分类号： C23C16/00 , C01B31/02
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , Y10S977/742
摘要： Embodiments of the present invention provide methods for the fabrication of carbon nanotubes using composite metal films. A composite metal film is fabricated to provide uniform catalytic sites to facilitate the uniform growth of carbon nanotubes. Further embodiments provide embedded nanoparticles for carbon nanotube fabrication. Embodiments of the invention are capable of maintaining the integrity of the catalytic sites at temperatures used in carbon nanotube fabrication processes, 600 to 1100° C.
摘要翻译：本发明的实施例提供了使用复合金属膜制造碳纳米管的方法。制造复合金属膜以提供均匀的催化位点以促进碳纳米管的均匀生长。另外的实施方案提供用于碳纳米管制造的嵌入式纳米颗粒。本发明的实施方案能够在碳纳米管制造工艺中使用的温度下维持催化部位的完整性，其温度为600至1100℃

52. 发明申请

US20070075427A1 Amine-free deposition of metal-nitride films 有权
标题翻译：无氮化物沉积金属氮化物膜
公开(公告)号：US20070075427A1
公开(公告)日：2007-04-05
申请号：US11240005
申请日：2005-09-30
申请人： Adrien Lavoie , Valery Dubin , Juan Dominguez , Kevin O'Brien , Steven Johnston , John Peck , David Thompson , David Peters
发明人： Adrien Lavoie , Valery Dubin , Juan Dominguez , Kevin O'Brien , Steven Johnston , John Peck , David Thompson , David Peters
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

53. 发明申请

US20060275927A1 Method and apparatus to fabricate polymer arrays on patterned wafers using electrochemical synthesis 有权
公开(公告)号：US20060275927A1
公开(公告)日：2006-12-07
申请号：US11144679
申请日：2005-06-06
申请人： Valery Dubin , Florian Gstrein , Gordon Holt , Brandon Barnett
发明人： Valery Dubin , Florian Gstrein , Gordon Holt , Brandon Barnett
IPC分类号： H01L21/00 , H01L29/74
CPC分类号： B82Y30/00 , B01J19/0046 , B01J2219/00497 , B01J2219/005 , B01J2219/00527 , B01J2219/00574 , B01J2219/00576 , B01J2219/00585 , B01J2219/00596 , B01J2219/00653 , B01J2219/00659 , B01J2219/00662 , B01J2219/00675 , B01J2219/00677 , B01J2219/00689 , B01J2219/00713 , B01J2219/00722 , B01J2219/00725
摘要： A wafer having a plurality of dies (also called array chips) on the wafer, the die having an electrode to generate a deprotecting reagent, a working electrode to electrochemically synthesize a material, a confinement electrode adjacent to the working electrode to confine reactive reagents, and a die pad, wherein die pads of the plurality of dies are interconnected on the wafer to electrochemically synthesize the material in parallel on a plurality of working electrodes is disclosed. Also, a method for wafer-scale manufacturing of a plurality of dies and a method for electrochemically synthesizing a material in parallel on a plurality of dies on a wafer are disclosed.

54. 发明申请

US20060220080A1 Polymer memory and method of its fabrication 有权
标题翻译：聚合物记忆及其制造方法
公开(公告)号：US20060220080A1
公开(公告)日：2006-10-05
申请号：US11096389
申请日：2005-03-31
申请人： Valery Dubin , Ebrahim Andideh
发明人： Valery Dubin , Ebrahim Andideh
IPC分类号： H01L29/94
CPC分类号： H01L27/10 , B82Y10/00 , B82Y30/00 , H01L29/516 , H01L29/78391 , Y10T29/435
摘要： An embodiment mitigates one or more of the limiting factors of fabricating polymer ferroelectric memory devices. For example, an embodiment reduces the degradation of the ferroelectric polymer due to the polymer's reaction with, and migration or diffusion of, adjacent metal electrode material. Further, the ferroelectric polymer is exposed to fewer potentially high temperature or high energy processes that may damage the polymer. An embodiment further incorporates an immobilized catalyst to improve the adhesion between adjacent layers, and particularly between the electrolessly plated electrodes and the ferroelectric polymer.
摘要翻译：一个实施例减轻了制造聚合物铁电存储器件的一个或多个限制因素。例如，一个实施方案由于聚合物与相邻的金属电极材料的反应和迁移或扩散而降低了铁电聚合物的劣化。此外，铁电聚合物暴露于可能损坏聚合物的较少的潜在高温或高能量过程。一个实施方案还包括固定化的催化剂以改善相邻层之间的粘合性，特别是在无电镀电极和铁电聚合物之间。

55. 发明申请

US20060205234A1 Forming a barrier layer in interconnect joints and structures formed thereby 有权
标题翻译：在互连接头和由此形成的结构中形成阻挡层
公开(公告)号：US20060205234A1
公开(公告)日：2006-09-14
申请号：US11078611
申请日：2005-03-11
申请人： Ting Zhong , Valery Dubin , Ming Fang
发明人： Ting Zhong , Valery Dubin , Ming Fang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/2885 , H01L21/7685 , H01L24/11 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05655 , H01L2224/13099 , H01L2924/00014 , H01L2924/01011 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/15747 , H01L2924/00 , H01L2224/05099
摘要： Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer.
摘要翻译：描述形成微电子结构的方法。这些方法的实施例包括在衬底上形成阻挡层，其中阻挡层包含钼; 以及在阻挡层上形成无铅互连结构。

56. 发明授权

US07087104B2 Preparation of electroless deposition solutions 失效
标题翻译：无电沉积溶液的制备
公开(公告)号：US07087104B2
公开(公告)日：2006-08-08
申请号：US10609443
申请日：2003-06-26
申请人： Hok-Kin Choi , Vani Thirumala , Valery Dubin , Chin-chang Cheng , Ting Zhong
发明人： Hok-Kin Choi , Vani Thirumala , Valery Dubin , Chin-chang Cheng , Ting Zhong
IPC分类号： C23C18/31 , B05D1/18
CPC分类号： C23C18/34 , C23C18/1632 , C23C18/1683 , C23C18/31 , C23C18/50
摘要： A system and method for storing a solution containing a subset of a group consisting of a metal ion, a complexing agent, an ammonium salt, and a strong base and then nearer to a time of use in an electroless deposition process, using the solution to form an electroless deposition solution containing the entire group. In one embodiment of the invention, the metal ion includes a cobalt ion, the complexing agent includes citric acid, the ammonium salt includes ammonium chloride, and the strong base includes tetramethylammonium hydroxide.
摘要翻译：一种用于存储包含由金属离子，络合剂，铵盐和强碱组成的组的子集，然后在无电沉积过程中更接近使用时间的组的溶液的系统和方法，形成包含整个组的无电沉积溶液。在本发明的一个实施方案中，金属离子包括钴离子，络合剂包括柠檬酸，铵盐包括氯化铵，强碱包括四甲基氢氧化铵。

57. 发明申请

US20060134902A1 Method for constructing contact formations 有权
标题翻译：构造接触层的方法
公开(公告)号：US20060134902A1
公开(公告)日：2006-06-22
申请号：US11019857
申请日：2004-12-21
申请人： Valery Dubin , Tzuen-Luh Huang , Ming Fang , Kevin Lee , Yuehai Liang , Margherita Chang
发明人： Valery Dubin , Tzuen-Luh Huang , Ming Fang , Kevin Lee , Yuehai Liang , Margherita Chang
IPC分类号： H01L21/44
CPC分类号： H01L21/2885 , C25D3/02 , C25D3/38 , C25D5/10 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1147 , H01L2224/13099 , H01L2924/01005 , H01L2924/01011 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2924/0496
摘要： According to one aspect of the invention, a method for forming contact formations is provided. A substrate may be placed in an electrolytic solution. The substrate may have an exposed conductive portion and the electrolytic solution may include a plurality of metallic ions and an accelerator. The accelerator may include at least one of bis-(sodium sulfopropyl)-disulfide and 3-mercapto-1-propanesulfonic acid-sodium salt. A voltage may be applied across the electrolytic solution and the conductive portion of the substrate to cause the metallic ions to be changed into metallic particles and deposited on the conductive portion. The electrolytic solution may also include a protonated organic additive. The electrolytic solution may also include an acid and a surfactant. The acid may include at least one of sulfuric acid, methane sulfonic acid, benzene sulfonic acid, and picryl sulfonic acid. The surfactant may include at least one of polyethylene glycol and polypropylene glycol.
摘要翻译：根据本发明的一个方面，提供了形成接触层的方法。衬底可以放置在电解溶液中。基板可以具有暴露的导电部分，电解液可以包括多个金属离子和加速器。促进剂可以包括双 - （磺基磺基丙基） - 二硫化物和3-巯基-1-丙磺酸钠盐中的至少一种。可以在电解液和基板的导电部分之间施加电压，以使金属离子变成金属颗粒并沉积在导电部分上。电解液还可以包括质子化的有机添加剂。电解液还可以包含酸和表面活性剂。酸可以包括硫酸，甲磺酸，苯磺酸和苦基磺酸中的至少一种。表面活性剂可以包括聚乙二醇和聚丙二醇中的至少一种。

58. 发明申请

US20060065536A1 Copper electroplating bath composition and a method of copper electroplating to improve gapfill 有权
标题翻译：铜电镀浴组合物和铜电镀方法，以改善填缝
公开(公告)号：US20060065536A1
公开(公告)日：2006-03-30
申请号：US10956282
申请日：2004-09-30
申请人： David Jentz , Ramesh Viswanathan , Paul McGregor , Valery Dubin , Rajiv Rastogi
发明人： David Jentz , Ramesh Viswanathan , Paul McGregor , Valery Dubin , Rajiv Rastogi
IPC分类号： C25D3/00 , C25D3/38
CPC分类号： H01L21/76877 , C25D3/38 , C25D5/18 , C25D7/123 , H01L21/2885
摘要： A copper electroplating bath composition and a method of copper electroplating to improve gapfill are provided. The method of electroplating includes providing an aqueous electroplating composition, comprising copper, at least one acid, at least one halogen ion, an additive including an accelerating agent, a suppressing agent, and a suppressing-accelerating agent, and the solution and mixture products thereof; contacting a substrate with the plating composition; and impressing a multi-step waveform potential upon the substrate, wherein the multi-step waveform potential includes an entry step, wherein the entry step includes a first sub-step applying a first current and a second sub-step applying second current, the second current being greater than the first current. The accelerating agent is provided in concentration of greater than 1.5 ml/liter, the suppressing agent is provided in concentration of greater than 15 ml/liter, and the accelerating-suppressing agent is provided in concentration of greater than 10 ml/liter.
摘要翻译：提供铜电镀浴组合物和镀铜方法以改善间隙填充。电镀方法包括提供包含铜，至少一种酸，至少一种卤素离子，包含促进剂，抑制剂和抑制促进剂的添加剂的含水电镀组合物及其溶液和混合物产物 ; 使基板与电镀组合物接触; 并且在所述基板上施加多步波形电位，其中所述多步波形电位包括入口步骤，其中所述入口步骤包括施加施加第二电流的第一电流和第二子步骤的第一子步骤，所述第二子步骤电流大于第一电流。以大于1.5ml /升的浓度提供促进剂，以大于15ml /升的浓度提供抑制剂，并且以大于10ml /升的浓度提供促进抑制剂。

59. 发明申请

US20050221473A1 Sensor array integrated circuits 审中-公开
标题翻译：传感器阵列集成电路
公开(公告)号：US20050221473A1
公开(公告)日：2005-10-06
申请号：US10814982
申请日：2004-03-30
申请人： Valery Dubin , Ken David , Andrew Berlin
发明人： Valery Dubin , Ken David , Andrew Berlin
IPC分类号： G01J3/02 , G01N33/53 , C12M1/34 , C12Q1/68
CPC分类号： B82Y30/00 , G01J3/02
摘要： An apparatus includes a condensed array addressed device; and a spectroscope optically coupled to the condensed array addressed device. A method includes determining bonding and/or lack-of-bonding of a target molecule to a condensed array addressed device by characterizing a subsequent rate of electrolysis on the condensed array addressed device. A method includes fabricating a condensed array addressed device using damascene patterning.
摘要翻译：一种装置包括一个聚光阵列寻址装置; 以及光学耦合到聚光阵列寻址装置的分光镜。一种方法包括通过表征冷凝阵列寻址装置上随后的电解速率来确定目标分子与冷凝阵列寻址装置的结合和/或缺少键合。一种方法包括使用镶嵌图案来制造聚光阵列寻址装置。

60. 发明申请

US20050163916A1 Electroless plating systems and methods 失效
标题翻译：化学镀系统和方法
公开(公告)号：US20050163916A1
公开(公告)日：2005-07-28
申请号：US10763470
申请日：2004-01-22
申请人： Valery Dubin , Arnel Fajardo , Chin-Chang Cheng
发明人： Valery Dubin , Arnel Fajardo , Chin-Chang Cheng
IPC分类号： B05D5/12 , C23C18/16 , C23C18/31 , H01L21/288
CPC分类号： H01L21/288 , C23C18/1632 , C23C18/1669 , C23C18/1676 , C23C18/1683 , C23C18/31
摘要： Electroless plating systems and methods are described herein.
摘要翻译：本文描述了化学镀系统和方法。

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