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51. 发明授权

US06586793B2 Ferroelectric memory and manufacturing method thereof 有权
标题翻译：铁电存储器
公开(公告)号：US06586793B2
公开(公告)日：2003-07-01
申请号：US09984518
申请日：2001-10-30
申请人： Keitaro Imai , Koji Yamakawa
发明人： Keitaro Imai , Koji Yamakawa
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/91
摘要： A ferroelectric memory includes first and second plugs respectively connected to one and the other of source/drain regions of the transistor formed on a semiconductor wafer. A first capacitor electrode is connected to the first plug and located at a position above the transistor. The first capacitor electrode includes first and second capacitor faces on the second plug side and a side reverse thereto, respectively. A ferroelectric film is disposed on the first capacitor face. A second capacitor electrode is connected to the second plug and located at a position above the transistor. The second capacitor electrode is disposed on the first capacitor face through the ferroelectric film.
摘要翻译：铁电存储器包括分别连接到形成在半导体晶片上的晶体管的源极/漏极区域中的一个和另一个的第一和第二插头。第一电容器电极连接到第一插头并且位于晶体管上方的位置处。第一电容器电极包括分别在第二插头侧的第一和第二电容器面和与其相反的一侧。铁电体膜设置在第一电容器面上。第二电容器电极连接到第二插头并且位于晶体管上方的位置。第二电容器电极通过铁电体膜设置在第一电容器面上。

52. 发明授权

US5431561A Method and apparatus for heat treating 失效
标题翻译：热处理方法和装置
公开(公告)号：US5431561A
公开(公告)日：1995-07-11
申请号：US166014
申请日：1993-12-14
申请人： Kikuo Yamabe , Keitaro Imai , Katsuya Okumura , Ken Nakao , Seikou Ueno
发明人： Kikuo Yamabe , Keitaro Imai , Katsuya Okumura , Ken Nakao , Seikou Ueno
IPC分类号： H01L21/324 , C30B31/12 , C30B31/14 , H01L21/22 , H01L21/31 , H01L21/673 , H01L21/683 , F27D5/00
CPC分类号： C30B31/12 , C30B31/14
摘要： A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.
摘要翻译：一种热处理装置中的热处理方法和装置，其特征在于，具有要加入预定气体的加热室，设置在所述加热室周围的加热器和设置在所述加热室中的夹具，用于支撑待处理的多个基板的晶片彼此并联，其中为了使热处理中要处理的基板的晶片的温度分布均匀，形成夹具以确定其尺寸和形状，其具有在根据具有预定形状确定步骤的热处理方法的梯度，使得夹具形成为环状托盘（即，支撑环），用于在周边保持要处理的基板，并且托盘的厚度等于或等于其外周侧比其内周侧厚。

53. 发明授权

US5239614A Substrate heating method utilizing heating element control to achieve horizontal temperature gradient 失效
标题翻译：基板加热方式利用加热元件控制实现水平温度梯度
公开(公告)号：US5239614A
公开(公告)日：1993-08-24
申请号：US791545
申请日：1991-11-14
申请人： Seiko Ueno , Ken Nakao , Kikuo Yamabe , Keitaro Imai
发明人： Seiko Ueno , Ken Nakao , Kikuo Yamabe , Keitaro Imai
IPC分类号： H01L21/22 , H01L21/00 , H01L21/205 , H01L21/31
CPC分类号： H01L21/67115
摘要： A heat-treating method comprising preparing a plurality of wafers parallel to one another in a process tube while keeping their surfaces to be treated substantially horizontal, arranging plural MoSi.sub.2 wire heaters along the longitudinal axis of the process tube so as to be placed around the process tube, adjusting the amount of current supplied to the heaters to form on the treated surface of each of the wafers temperature gradient extending from one side of the outer circumferential rim of each of the wafers to the other side thereof, and rotating the wafers in their surfaces.
摘要翻译：一种热处理方法，包括在处理管中彼此平行地制备多个晶片，同时保持其待处理的表面基本上水平，沿着处理管的纵向轴线布置多个MoSi2线加热器，以便围绕该工艺调节供应到加热器的电流量，以在每个晶片的每个晶片的处理表面上形成从每个晶片的外周边缘的一侧延伸到另一侧的温度梯度，并且将晶片在它们的表面。

54. 发明授权

US5189503A High dielectric capacitor having low current leakage 失效
标题翻译：高介电电容器具有低电流泄漏
公开(公告)号：US5189503A
公开(公告)日：1993-02-23
申请号：US683132
申请日：1991-04-10
申请人： Kyoichi Suguro , Keitaro Imai , Mitsutoshi Koyama , Kikuo Yamabe
发明人： Kyoichi Suguro , Keitaro Imai , Mitsutoshi Koyama , Kikuo Yamabe
IPC分类号： H01L21/02 , H01L21/316 , H01L27/108 , H01L29/92
CPC分类号： H01L27/10808 , H01L28/40 , H01L21/31604
摘要： A dielectric insulation film consists of a metal oxide and pieces of dissimilar metal element added to the metal oxide. A positive charge number under an ionized state of the dissimilar metal element is smaller by one than that of the metal oxide. An ionic charge number of the dissimilar metal element is of a predetermined one kind. The dielectric insulation film is formed as an insulation film of capacitor of each cell of a semiconductor device according to a chemical vapor deposition (CVD) method in the process of forming cells of the semiconductor device.
摘要翻译：介电绝缘膜由金属氧化物和添加到金属氧化物中的异种金属元素组成。异种金属元素的离子化状态下的正电荷数小于金属氧化物的正电荷数。异种金属元素的离子电荷数是预定的一种。在形成半导体器件的电池的工艺中，根据化学气相沉积（CVD）方法，将介电绝缘膜形成为半导体器件的每个电池的电容器的绝缘膜。

55. 发明授权

US08742661B2 Display device comprising a self-luminous light emitter and a barrier body in direct contact with a sealing material 有权
标题翻译：显示装置包括自发光发光器和与密封材料直接接触的阻挡体
公开(公告)号：US08742661B2
公开(公告)日：2014-06-03
申请号：US13274486
申请日：2011-10-17
申请人： Keitaro Imai , Aya Anzai , Yasuko Watanabe
发明人： Keitaro Imai , Aya Anzai , Yasuko Watanabe
IPC分类号： H01L51/50 , H01L51/52 , H01L27/32
CPC分类号： H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
摘要翻译：本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤设备。本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。因此，提供了一种生产具有提高的产量的显示装置的方法。

56. 发明授权

US08629442B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08629442B2
公开(公告)日：2014-01-14
申请号：US13085750
申请日：2011-04-13
申请人： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
发明人： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
IPC分类号： H01L29/04
CPC分类号： H01L33/08 , G02F1/1368 , G02F2001/136295 , H01L21/76838 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/66765 , H01L2924/0002 , Y10T428/24421 , H01L2924/00
摘要： At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like.
摘要翻译：通过能够选择性地形成图案以制造液晶的方法形成至少一个或多个形成布线或电极的导电层和制造用于形成预定图案的掩模等显示面板所需的图案显示设备。使用能够通过根据特定目的选择性地排出组合物的液滴来形成预定图案的液滴喷射方法作为能够在形成导电层，绝缘层等中选择性地形成图案的方法。

57. 发明授权

US08569753B2 Storage device comprising semiconductor elements 有权
标题翻译：存储装置包括半导体元件
公开(公告)号：US08569753B2
公开(公告)日：2013-10-29
申请号：US13117588
申请日：2011-05-27
申请人： Atsuo Isobe , Yoshinori Ieda , Keitaro Imai , Kiyoshi Kato , Yuto Yakubo , Yuki Hata
发明人： Atsuo Isobe , Yoshinori Ieda , Keitaro Imai , Kiyoshi Kato , Yuto Yakubo , Yuki Hata
IPC分类号： H01L21/02
CPC分类号： H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/1156 , H01L27/1225 , H01L28/60
摘要： The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased.
摘要翻译：提供了一种半导体器件，其中包括第一晶体管，第二晶体管和电容器的多个存储单元被布置成矩阵，并且布线（也称为位线）用于连接其中一个存储单元和另一个第一晶体管中的一个存储单元和源极或漏极区域通过导电层和设置在其间的第二晶体管中的源极或漏极电连接。利用这种结构，与第一晶体管中的源极或漏极以及第二晶体管中的源极或漏极连接到不同布线的结构相比，可以减少布线的数量。因此，可以提高半导体器件的集成度。

58. 发明授权

US08450123B2 Oxygen diffusion evaluation method of oxide film stacked body 有权
标题翻译：氧化膜层叠体的氧扩散评价方法
公开(公告)号：US08450123B2
公开(公告)日：2013-05-28
申请号：US13213458
申请日：2011-08-19
申请人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
发明人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
IPC分类号： H01L21/66
CPC分类号： G01N23/2258 , G01N2223/611
摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.
摘要翻译：经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

59. 发明申请

US20120032178A1 Display Device and Method for Manufacturing the Same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120032178A1
公开(公告)日：2012-02-09
申请号：US13274486
申请日：2011-10-17
申请人： Keitaro Imai , Aya Anzai , Yasuko Watanabe
发明人： Keitaro Imai , Aya Anzai , Yasuko Watanabe
IPC分类号： H01L27/15
CPC分类号： H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
摘要翻译：本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤设备。本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。因此，提供了一种生产具有提高的产量的显示装置的方法。

60. 发明授权

US08101467B2 Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver 有权
标题翻译：液晶显示装置及其制造方法以及液晶电视接收机
公开(公告)号：US08101467B2
公开(公告)日：2012-01-24
申请号：US10574829
申请日：2004-10-25
申请人： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
发明人： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
IPC分类号： H01L21/00
CPC分类号： H01L33/08 , G02F1/1368 , G02F2001/136295 , H01L21/76838 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/66765 , H01L2924/0002 , Y10T428/24421 , H01L2924/00
摘要： At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like.
摘要翻译：通过能够选择性地形成图案以制造液晶的方法形成至少一个或多个形成布线或电极的导电层和制造用于形成预定图案的掩模等显示面板所需的图案显示设备。使用能够通过根据特定目的选择性地排出组合物的液滴来形成预定图案的液滴喷射方法作为能够在形成导电层，绝缘层等中选择性地形成图案的方法。

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