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    • 55. 发明授权
    • Reaction vessel and temperature control system
    • 反应容器和温度控制系统
    • US06403037B1
    • 2002-06-11
    • US09497848
    • 2000-02-04
    • Ronald ChangDouglas B. DorityLee A. ChristelKurt E. Petersen
    • Ronald ChangDouglas B. DorityLee A. ChristelKurt E. Petersen
    • G01N1506
    • B01L3/502B01L3/50825B01L7/52B01L2200/026B01L2200/0642B01L2200/0684B01L2300/0654B01L2300/14B01L2400/049B01L2400/0644G01N2035/0405Y10T436/2575
    • The invention provides a reaction vessel and temperature control system for performing heat-exchanging chemical reactions, such as nucleic acid amplification. The vessel has a body defining a reaction chamber, and a loading structure extending from the body for loading a sample into the chamber. The loading structure has a loading reservoir, an aspiration port, and respective fluid channels connecting the loading reservoir and aspiration port to the chamber. To load the sample into the vessel, the sample is first dispensed into the loading reservoir and then drawn into the chamber by application of a vacuum to the aspiration port. The vessel also includes a seal aperture extending over the outer ends of the loading reservoir and aspiration port. A plug is inserted into the aperture after loading the sample into the chamber to simultaneously seal the chamber, loading reservoir, and aspiration port from the external environment. The temperature of the sample is controlled by opposing plates positioned to contact opposite sides of the vessel. The system also,includes thermal elements for heating or cooling the plates and optics for detecting one or more analytes in the sample.
    • 本发明提供了用于进行热交换化学反应如核酸扩增的反应容器和温度控制系统。 容器具有限定反应室的主体和从主体延伸以将样品装载到室中的装载结构。 装载结构具有装载储存器,抽吸端口和将装载储存器和抽吸端口连接到室的各个流体通道。 为了将样品装载到容器中,首先将样品分配到装载容器中,然后通过向抽吸端口施加真空而将其抽吸到室中。 容器还包括在装载容器和抽吸端口的外端上延伸的密封孔。 将样品装入室后,将插头插入孔中,以同时将腔室,装载储存器和抽吸端口从外部环境密封。 样品的温度由位于容器相对侧的相对板控制。 该系统还包括用于加热或冷却板的热元件和用于检测样品中的一种或多种分析物的光学元件。
    • 59. 发明授权
    • Planar semiconductor three direction acceleration detecting device and
method of fabrication
    • 平面半导体三向加速度检测装置及其制造方法
    • US4342227A
    • 1982-08-03
    • US219685
    • 1980-12-24
    • Kurt E. PetersenAnne C. Shartel
    • Kurt E. PetersenAnne C. Shartel
    • G01P15/08G01P15/125G01P15/18H01L29/78
    • G01P15/125G01P15/0802
    • This device comprises a v-shaped cavity in a planar semiconductor substrate having a substantially thin-walled v-shaped cantilever beam inset therein. The beam is movable in directions normal to and laterally of the plane of the substrate, whereby acceleration is sensed in both of these directions. A planar substrate of n-type silicon is arranged with the major face oriented in the (100) plane. A v-shaped groove is anisotropically etched in the substrate and capacitor electrode regions are diffused into the sloping walls. An epitaxial layer is grown over this substrate, and over that a layer of insulation is added. A layer of conductive material is laid down on the insulation to define an electrode. The substrate is again subjected to an anisotropic etchant for cutting the epitaxial layer from under the cantilever beam formed of the insulating layer and the conducting layer. The electrodes form two variable capacitors which are connected in parallel or differentially to simple circuitry laid down on the same substrate for resolving the bidirectional movement of the beam. Three such devices appropriately oriented, and compatible electronic circuitry, enable all three spatial coordinates to be probed with a single substrate assembly.
    • 该装置包括在其中插入有基本上薄壁的V形悬臂梁的平面半导体衬底中的V形空腔。 梁可以在垂直于基板的平面和侧面的方向上移动,由此在两个方向上都感测到加速度。 n型硅的平面衬底被布置成主面朝向(100)面。 在基板中各向异性地蚀刻V形槽,并且电容器电极区域扩散到倾斜壁中。 在该衬底上生长外延层,并且在该层上添加绝缘层。 一层导电材料放置在绝缘体上以限定电极。 衬底再次经受各向异性蚀刻剂,用于从由绝缘层和导电层形成的悬臂梁下面切割外延层。 电极形成两个可并联或差分地连接到放置在同一衬底上的简单电路的可变电容器,用于解决光束的双向移动。 三个这样的设备适当地定向和兼容的电子电路,使得能够用单个基板组件探测所有三个空间坐标。
    • 60. 发明授权
    • Capacitive pressure transducer
    • 电容式压力传感器
    • US4332000A
    • 1982-05-25
    • US193860
    • 1980-10-03
    • Kurt E. Petersen
    • Kurt E. Petersen
    • G01L9/12G01L9/00H01L29/84H01G7/00
    • G01L9/0073
    • An integrated semiconductor pressure transducer comprises a central conducting diaphragm located between two frusto-pyramidal recesses defined by contiguous semiconductor body members of conductivity type different from that of the diaphragm. A metal membrane with communicating apertures subtends one cavity and forms a relatively fixed plate of a capacitor, the other plate of which is formed by the diaphragm. A method of making the transducer in semiconductor process steps includes provisions for normal integrated circuit device fabrication whereby a transducer and utilization circuitry are fabricated in the same process into a single integrated semiconductor device.
    • 一个集成的半导体压力传感器包括一个中心导电隔膜,位于两个截头圆锥形凹槽之间,这两个截头圆锥形凹槽由与隔膜不同的导电类型的连续半导体本体构件限定。 具有连通孔的金属膜对着一个空腔并形成电容器的相对固定的板,另一个板由隔膜形成。 在半导体工艺步骤中制造换能器的方法包括用于正常集成电路器件制造的设备,由此将换能器和利用电路以相同的工艺制造成单个集成半导体器件。