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    • 53. 发明申请
    • Three-dimensional shape-measuring device
    • 三维形状测量装置
    • US20060239538A1
    • 2006-10-26
    • US10560048
    • 2004-06-03
    • Isao SatoHirooki AokiMasato NakajimaKazuhiro MimuraYasuhiro TakemuraKei KatouToshiharu Takesue
    • Isao SatoHirooki AokiMasato NakajimaKazuhiro MimuraYasuhiro TakemuraKei KatouToshiharu Takesue
    • H04N13/00G06K9/00G06T15/00
    • A61B5/1135A61B5/0064A61B5/1075A61B5/1127A61B5/1128A61B2562/0233G01B11/25
    • A 3-D shape measurement apparatus for grasping the state of an object with ease and accuracy is provided. The 3-D shape measurement apparatus includes: a first 3-D sensor 10a having a projecting device 11 for projecting a light pattern on a target area, and a (first) image capturing apparatus 12a placed at a first interval d1 from the projecting device 11 to capture an image of the target area on which the light pattern is projected; a second 3-D sensor 10b having a projecting device 11, and a (second) image capturing apparatus 12b placed at a second interval d2 longer than the first interval d1 from the projecting device 11 to capture an image of the target area on which the light pattern is projected; 3-D information computing means 22 for obtaining external shape information on an object 2 based on the shift of the pattern on the image acquired with the first 3-D sensor 10a; variation information computing means 23 for obtaining variation information on the object 2 based on the shift of the pattern on the image acquired with the second 3-D sensor 10b; and information composing means 24 for composing the external shape information and the variation information.
    • 提供一种用于简单且准确地掌握物体的状态的3-D形状测量装置。 3维形状测量装置包括:具有用于将目标区域上的光图案投射的投影装置11的第一3D传感器10a和以第一间隔d 1放置的第一图像拍摄装置12a, 投影装置11,用于捕获其上投影有光图案的目标区域的图像; 具有投影装置11的第二3-D传感器10b和从投影装置11以比第一间隔d 1长的第二间隔d 2放置的第二图像拍摄装置12b,以捕获目标的图像 投射光图案的区域; 3-D信息计算装置22,用于基于由第一3-D传感器10a获取的图像上的图案的移动来获得关于对象2的外部形状信息; 变化信息计算装置23,用于基于利用第二3-D传感器10b获取的图像上的图案的移动来获得关于对象2的变化信息; 以及用于构成外部形状信息和变化信息的信息组合装置24。
    • 59. 发明授权
    • Nonvolatile semiconductor memory device
    • 非易失性半导体存储器件
    • US4831592A
    • 1989-05-16
    • US68521
    • 1987-07-01
    • Hiroto NakaiHiroshi IwahashiMasamichi AsanoIsao SatoShigeru KumagaiKazuto Suzuki
    • Hiroto NakaiHiroshi IwahashiMasamichi AsanoIsao SatoShigeru KumagaiKazuto Suzuki
    • G11C16/30G11C16/32
    • G11C16/32G11C16/30
    • A nonvolatile semiconductor memory device includes a pulse signal generator for applying a pulse signal to a capacitor, a first diode connected at an anode to the capacitor, a charging circuit for charging the capacitor in a programming mode, a voltage limiter for preventing a potential at the output node from increasing above a predetermined level, memory cells of nonvolatile MOS transistors, a load MOS transistor connected to a high-voltage terminal, a row decoder for selecting a set of memory cells arranged in one row, column gate MOS transistors connected between respective sets of memory cells arranged in one column and the load MOS transistor, a data generator responsive to the voltage at the output node to turn on or off the load MOS transistor, and a column decoder responsive to the voltage at the output node to selectively energize the column gate MOS transistors. It further comprises a second diode connected between the cathode of the first diode and the output node, and a discharging circuit for discharging the cathode of the first diode to a reference voltage level during a time other than a programming mode.
    • 一种非易失性半导体存储器件,包括用于向电容器施加脉冲信号的脉冲信号发生器,连接到电容器的阳极的第一二极管,以编程模式对电容器充电的充电电路,用于防止电位 输出节点从预定电平上升,非易失性MOS晶体管的存储单元,连接到高电压端子的负载MOS晶体管,用于选择排列成一行的一组存储单元的行解码器,连接在 设置在一列中的各组存储单元和负载MOS晶体管,响应于输出节点处的电压以打开或关闭负载MOS晶体管的数据发生器,以及响应于输出节点处的电压以选择性地 激励列栅极MOS晶体管。 其还包括连接在第一二极管的阴极和输出节点之间的第二二极管和用于在编程模式之外的时间期间将第一二极管的阴极放电到参考电压电平的放电电路。