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51. 发明申请

US20080206950A1 Methods of forming a plurality of capacitors 有权
标题翻译：形成多个电容器的方法
公开(公告)号：US20080206950A1
公开(公告)日：2008-08-28
申请号：US11711232
申请日：2007-02-26
申请人： Vishwanath Bhat , Kevin R. Shea
发明人： Vishwanath Bhat , Kevin R. Shea
IPC分类号： H01L21/20
CPC分类号： H01L28/91
摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.
摘要翻译：形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。中间区域包括沟槽。导电的含金属氮化物的材料形成在开口内并抵靠沟槽的侧壁部分以小于完全填充沟槽。沟槽内的导电材料的内侧壁在含氮气氛中退火。用液体蚀刻溶液蚀刻阵列区域内的绝缘材料，有效地暴露阵列区域内的导电材料的外侧壁部分。阵列区域内的导电材料被并入多个电容器中。

52. 发明授权

US07276455B2 Methods of etching an aluminum oxide comprising substrate, and methods of forming a capacitor 失效
标题翻译：蚀刻含有氧化铝的基板的方法，以及形成电容器的方法
公开(公告)号：US07276455B2
公开(公告)日：2007-10-02
申请号：US11476391
申请日：2006-06-27
申请人： Kevin R. Shea
发明人： Kevin R. Shea
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31111 , H01L28/92
摘要： This invention methods of etching an aluminum oxide comprising substrate, and methods of forming capacitors. In one implementation, a method of etching an aluminum oxide comprising substrate includes flowing water and ozone to aluminum oxide on the substrate, with at least one of the water and the ozone being at a temperature of at least 65° C. at the aluminum oxide effective to etch aluminum oxide from the substrate. In one implementation, aspects of the method are utilized in forming a capacitor.
摘要翻译：本发明的蚀刻包含基底的氧化铝的方法，以及形成电容器的方法。在一个实施方案中，蚀刻包含基底的氧化铝的方法包括将水和臭氧流入基底上的氧化铝，至少一种水和臭氧在氧化铝处于至少65℃的温度有效地从基底上蚀刻氧化铝。在一个实施方案中，该方法的方面用于形成电容器。

53. 发明授权

US07244682B2 Methods of removing metal-containing materials 失效
标题翻译：去除含金属材料的方法
公开(公告)号：US07244682B2
公开(公告)日：2007-07-17
申请号：US10841706
申请日：2004-05-06
申请人： Kevin R. Shea , Niraj B. Rana
发明人： Kevin R. Shea , Niraj B. Rana
IPC分类号： H01L21/302
CPC分类号： H01L21/32134 , H01L28/90
摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.
摘要翻译：在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法比例结构具有高蚀刻速率。蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

54. 发明授权

US07122422B2 Methods of forming capacitors 失效
标题翻译：形成电容器的方法
公开(公告)号：US07122422B2
公开(公告)日：2006-10-17
申请号：US10895481
申请日：2004-07-20
申请人： Garo J. Derderian , Kevin R. Shea
发明人： Garo J. Derderian , Kevin R. Shea
IPC分类号： H01L21/8242
CPC分类号： H01L21/02178 , H01L21/0206 , H01L21/0214 , H01L21/0217 , H01L21/022 , H01L21/3105 , H01L21/3144 , H01L21/31616 , H01L28/40 , H01L28/56
摘要： This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silicon and nitrogen comprising material on the first capacitor electrode material. The dielectric silicon and nitrogen comprising material is exposed to an aqueous fluid comprising a base and an oxidizer. The aqueous fluid has a pH greater than 7.0. After the exposing to the aqueous fluid, an aluminum oxide comprising capacitor dielectric material is deposited over the first capacitor electrode material. A second capacitor electrode material is formed over the aluminum oxide comprising capacitor dielectric material. Other aspects and implementations are contemplated.
摘要翻译：本发明包括形成电容器的方法。在一个实施方案中，在衬底上形成第一电容器电极材料。将第一电容器电极材料暴露于含氮气氛中，有效地在第一电容器电极材料上形成电介质硅和氮的材料。介电硅和氮的材料暴露于包含碱和氧化剂的含水流体。含水流体的pH值大于7.0。在暴露于含水流体之后，将包含电容器介电材料的氧化铝沉积在第一电容器电极材料上。在包含电容器电介质材料的氧化铝上形成第二电容器电极材料。考虑了其他方面和实现。

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