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    • 52. 发明授权
    • System and method for receiving broad-band signals
    • 用于接收宽带信号的系统和方法
    • US07266345B2
    • 2007-09-04
    • US10222542
    • 2002-08-16
    • Jeong-Ho Park
    • Jeong-Ho Park
    • H04B17/00H04B1/00H04B1/03
    • H04B1/0092H04B1/406
    • A system and a method for receiving and processing broad-band signals in a software defined radio (SDR) terminal are provided. The system comprises first and second frequency pass units and an analog to digital signal converter (A/D converter). The first frequency pass unit converts an analog radio frequency (RF) signal into a direct current (DC) level signals and removes noise and DC components from the analog RF signal, if the RF signal is a high frequency signal. Otherwise, the second frequency pass unit removes noise and DC components from the analog RF signal, if the RF signal is a low frequency signal. The A/D converter converts the RF signal into a digital RF signal after the DC components are removed.
    • 提供了一种用于在软件定义无线电(SDR)终端中接收和处理宽带信号的系统和方法。 该系统包括第一和第二频率单元和模数转换器(A / D转换器)。 如果RF信号是高频信号,则第一频率单元将模拟射频(RF)信号转换为直流(DC)电平信号并从模拟RF信号中去除噪声和DC分量。 否则,如果RF信号是低频信号,则第二频率单元从模拟RF信号中去除噪声和DC分量。 在去除直流分量之后,A / D转换器将RF信号转换成数字RF信号。
    • 53. 发明申请
    • METHOD OF FABRICATING A TRANSISTOR
    • 制造晶体管的方法
    • US20070158735A1
    • 2007-07-12
    • US11615791
    • 2006-12-22
    • Jeong-Ho Park
    • Jeong-Ho Park
    • H01L29/788
    • H01L29/0847H01L29/0657H01L29/66659H01L29/7835
    • A method of forming a transistor reduces leakage current and hot carrier effects, and therefore improves current performance. The method of forming a transistor includes selectively etching the semiconductor substrate to form a substrate protrusion and expose a buried source/drain implant region. A gate insulating layer covers the substrate protrusion and the first source/drain region. A gate conductor layer is selectively etched to form a gate pattern covering the sidewalls of the substrate protrusion and a portion of the semiconductor substrate adjacent to the sidewalls of the substrate protrusion. A second source/drain region is stacked over the top of the substrate protrusion. Contacts connected to the gate pattern and the first and second source/drain regions.
    • 形成晶体管的方法减少了泄漏电流和热载流子效应,从而提高了电流性能。 形成晶体管的方法包括选择性地蚀刻半导体衬底以形成衬底突起并暴露埋入的源极/漏极注入区域。 栅极绝缘层覆盖基板突起和第一源极/漏极区域。 选择性地蚀刻栅极导体层以形成覆盖基板突起的侧壁和邻近基板突起的侧壁的半导体基板的一部分的栅极图案。 第二源极/漏极区域堆叠在衬底突起的顶部上。 连接到栅极图案和第一和第二源极/漏极区域的触点。
    • 56. 发明授权
    • Method of preparing N,N′-disubstituted-3,3′-dithiodipropionamide and method of preparing substituted 3-isothiazolone by using the same
    • 制备N,N'-二取代-3,3'-二硫代二丙酰胺的方法及其制备取代的3-异噻唑酮的方法
    • US06506904B1
    • 2003-01-14
    • US10152118
    • 2002-05-21
    • Seung-Hwan KimJeong-Ho ParkJin-Man KimSoon-Jong HahnKi-Seong ChoiMyung-Ho Cho
    • Seung-Hwan KimJeong-Ho ParkJin-Man KimSoon-Jong HahnKi-Seong ChoiMyung-Ho Cho
    • C07D27503
    • C07D275/03C07C319/20C07C319/24C07C323/60
    • A method of preparing N,N-disubstituted 3,3′-dithiodipropionamide of formula (2) is provided. In the method, 3-mercaptopropi-onamide of formula (4) reacts with an aqueous solution of amine to prepare N-substituted-3-mercaptopropionamide of formula (3) and N-substituted-3-mercaptopropionamide reacts with an aqueous solution of hydrogen peroxide. In addition, a method of preparing substituted 3-isothiazolone is provided. In the method, the produced N,N-disubstituted-3,3′-dithiodipropionamide reacts with a halogenating agent, wherein X and Z are same or different and each selected from the group consisting of hydrogen or a lower alkyl group; Y is selected from the group consisting of hydrogen, an alkyl group of 1 to 18 carbon atoms, a cycloalkyl group of up to 10 carbon atoms, an aralkyl group of up to 10 carbon atoms, an alkyl group of up to 10 carbon atoms, a halogen-, lower alkyl- or lower alkoxy-substituted aryl group, cyano alkyl group, a carboalkoxyalkyl group, a haloalkyl group, an alkoxyalkyl group, an aryloxyalkyl group of up to 12 carbon atoms, an aralkoxyalkyl group of up to 12 carbon atoms, a dialkylaminoalkyl group, an alkylacyl group of up to 8 carbon atoms, a lower alkylsulfonyl group, an arylsulfonyl group of up to 10 carbon atoms, a cyano group and a carbamoyl group.
    • 提供了制备式(2)的N,N-二取代的3,3'-二硫代二丙酰胺的方法。 在该方法中,式(4)的3-巯基丙酰胺与胺水溶液反应制备式(3)的N-取代-3-巯基丙酰胺,N-取代-3-巯基丙酰胺与过氧化氢水溶液 。 此外,提供了制备取代的3-异噻唑酮的方法。 在该方法中,所制备的N,N-二取代-3,3'-二硫代二丙酰胺与卤化剂反应,其中X和Z相同或不同,各自选自氢或低级烷基; Y选自氢,1至18个碳原子的烷基,至多10个碳原子的环烷基,至多10个碳原子的芳烷基,至多10个碳原子的烷基, 卤素,低级烷基或低级烷氧基取代的芳基,氰基烷基,碳烷氧基烷基,卤代烷基,烷氧基烷基,至多12个碳原子的芳氧基烷基,至多12个碳原子的芳烷氧基烷基 ,二烷基氨基烷基,至多8个碳原子的烷基酰基,低级烷基磺酰基,至多10个碳原子的芳基磺酰基,氰基和氨基甲酰基。