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51. 发明授权

US07274070B2 Complementary thin film transistor circuit, electro-optical device, and electronic apparatus 失效
标题翻译：互补薄膜晶体管电路，电光器件和电子设备
公开(公告)号：US07274070B2
公开(公告)日：2007-09-25
申请号：US10786151
申请日：2004-02-26
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： H01L27/12
CPC分类号： H01L21/02609 , H01L21/02667 , H01L21/2022 , H01L27/1281 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： To provide a highly reliable complementary thin film transistor circuit in which deviations in characteristics of a first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor can be reduced or prevented and operated stably. A first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor are formed using single crystal grains, the single crystal grains being formed substantially centered on each of a plurality of starting-point portions provided on an insulating surface of a substrate, wherein the first-conductivity-type thin film transistor and the second-conductivity-type thin film transistor are formed by equalizing their drain current directions, and are formed in the single crystal grains in which at least channel regions of the first-conductivity-type thin film transistor and the second-conductivity-type thin film transistor have the same plane orientation.
摘要翻译：为了提供一种高度可靠的互补薄膜晶体管电路，其中第一导电型薄膜晶体管和第二导电型薄膜晶体管的特性偏差可以被稳定地减小或防止和操作。第一导电型薄膜晶体管和第二导电型薄膜晶体管是使用单晶晶粒形成的，单晶晶粒基本上位于设置在绝缘表面上的多个起点部分的中心上其特征在于，所述第一导电型薄膜晶体管和所述第二导电型薄膜晶体管通过使其漏极电流方向相等而形成，并且形成在所述第一导电型薄膜晶体管和所述第二导电型薄膜晶体管的至少沟道区域中，导电型薄膜晶体管和第二导电型薄膜晶体管具有相同的平面取向。

52. 发明申请

US20060209011A1 Electrophoretic display device and driving method thereof 有权
标题翻译：电泳显示装置及其驱动方法
公开(公告)号：US20060209011A1
公开(公告)日：2006-09-21
申请号：US11330305
申请日：2006-01-11
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： G09G3/34
CPC分类号： G09G3/344 , G09G2300/0876 , G09G2320/066
摘要： An electrophoretic display device including a first substrate, a second substrate, an electrophoretic material interposed between the first substrate and the second substrate, the electrophoretic material including a positively charged particle and a negatively charged particle, a common electrode provided on the second substrate, a pixel provided at an intersection of a signal line and a scan line, the pixel provided in a plural number and arranged in matrix on the first substrate. The electrophoretic display device further including a pixel electrode provided in the pixel, a capacitor line provided in the pixel, a storage capacitor provided in the pixel, and a second electrode of the storage capacitor being coupled to a storage capacitor line and a thin film transistor (TFT) provided in the pixel, a source electrode of the TFT being coupled to a first electrode of the storage capacitor and the pixel electrode, a drain electrode of the TFT being coupled to the signal line, and a gate electrode of the TFT being coupled to the scan line. A capacitor line low select signal VSL or a capacitor line non-select signal VSC having a higher electric potential than an electric potential of the capacitor line low select signal VSL is supplied to the storage capacitor line.
摘要翻译：一种电泳显示装置，包括第一基板，第二基板，插入在第一基板和第二基板之间的电泳材料，所述电泳材料包括带正电的粒子和带负电的粒子，设置在第二基板上的公共电极，设置在信号线和扫描线的交点处的像素，所述像素被设置为多个并以矩阵形式布置在第一基板上。电泳显示装置还包括设置在像素中的像素电极，设置在像素中的电容器线，设置在像素中的存储电容器和存储电容器的第二电极耦合到辅助电容线和薄膜晶体管（TFT），所述TFT的源电极耦合到所述存储电容器的第一电极和所述像素电极，所述TFT的漏电极耦合到所述信号线，并且所述TFT的栅电极为耦合到扫描线。将具有比电容器线路低选择信号VSL的电位高的电位的电容器线路低选择信号VSL或电容器线路非选择信号VSC提供给辅助电容线。

53. 发明申请

US20060190737A1 Portable information device 审中-公开
标题翻译：便携式信息设备
公开(公告)号：US20060190737A1
公开(公告)日：2006-08-24
申请号：US11328776
申请日：2006-01-10
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： H04L9/00
CPC分类号： G07F7/1008 , G06K19/07 , G06K19/0705 , G06K19/0716 , G06K19/07345 , G06Q20/341 , G06Q20/40145
摘要： A portable information device having a central processing unit and a power source coupled to the central processing unit and driving the central processing unit, comprises: an external control system circuit provided between the power source and the central processing unit, and providing power supply from the power source to the central processing unit by an external input; and an autonomous control system circuit providing power supply from the power source to the central processing unit under control of the central processing unit; the external control system circuit and the autonomous control system circuit being coupled in parallel with each other, the external control system circuit including a mechanical switch turned on and off by an external input, and the autonomous control system circuit including a transistor switch turned on and off under control of the central processing unit.
摘要翻译：一种具有中央处理单元和耦合到中央处理单元并驱动中央处理单元的电源的便携式信息设备，包括：设置在电源和中央处理单元之间的外部控制系统电路，并且提供来自通过外部输入向中央处理单元供电; 以及在所述中央处理单元的控制下，从所述电源向所述中央处理单元提供电源的自主控制系统电路; 所述外部控制系统电路和所述自主控制系统电路彼此并联耦合，所述外部控制系统电路包括由外部输入端接通和断开的机械开关，所述自主控制系统电路包括晶体管开关导通和在中央处理单元的控制下。

54. 发明申请

US20060072355A1 Electrostatic capacitance detection device and smart card 有权
公开(公告)号：US20060072355A1
公开(公告)日：2006-04-06
申请号：US11207841
申请日：2005-08-22
申请人： Hiroaki Ebihara , Mitsutoshi Miyasaka
发明人： Hiroaki Ebihara , Mitsutoshi Miyasaka
IPC分类号： G11C11/24
CPC分类号： G07C9/00087 , G06K9/0002 , G06K19/0718 , G07C2009/00095
摘要： An electrostatic capacitance detection device for detecting electrostatic capacitance that changes in accordance with a distance from a target object to read surface contours of the target object, including electrostatic capacitance detection elements arranged in M rows and N columns, a power supply line supplying power to the electrostatic capacitance detection elements, an output line outputting a signal from the electrostatic capacitance detection elements, M row lines selecting the electrostatic capacitance detection elements disposed on a specific row, and N column lines selecting the electrostatic capacitance detection elements disposed on a specific column. The electrostatic capacitance detection elements each includes a) a signal detection element storing a charge in accordance with the electrostatic capacitance, b) a row selection element causing the electrostatic capacitance detection element to enter a selected state in response to a signal from the row line, c) a column selection element causing the electrostatic capacitance detection element to enter a selected state in response to a signal from the column line, and d) a signal amplification element amplifying a signal corresponding to the charge stored in the signal detection element. The signal detection element includes a capacitance detection electrode and a reference capacitor. The signal amplification element is a thin-film semiconductor device for signal amplification including a source electrode, a drain electrode and a gate electrode. The row selection element is a thin-film semiconductor device for row selection including a source electrode, a drain electrode and a gate electrode. The column selection element is a thin-film semiconductor device for column selection including a source electrode, a drain electrode and a gate electrode. The reference capacitor includes a reference capacitor first electrode, a reference capacitor dielectric film and a reference capacitor second electrode. The gate electrode of the thin-film semiconductor device for signal amplification, the capacitance detection electrode, and the reference capacitor second electrode are coupled to each other. The gate electrode of the thin-film semiconductor device for row selection is coupled to the row line. The gate electrode of the thin-film semiconductor device for column selection is coupled to the column line. The source electrode and the drain electrode of the thin-film semiconductor device for signal amplification, the source electrode and the drain electrode of the thin-film semiconductor device for row selection, and the source electrode and the drain electrode of the thin-film semiconductor device for column selection are coupled in series between the power supply line and the output line. On-resistance of the thin-film semiconductor device for row selection and on-resistance of the thin-film semiconductor device for column selection are smaller than on-resistance of the thin-film semiconductor device for signal amplification.

55. 发明授权

US07012302B2 Complementary thin film transistor circuit, electro-optical device, and electronic apparatus 失效
标题翻译：互补薄膜晶体管电路，电光器件和电子设备
公开(公告)号：US07012302B2
公开(公告)日：2006-03-14
申请号：US10771431
申请日：2004-02-05
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： H01L27/01
CPC分类号： H01L29/78675 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/42384 , H01L29/78603 , H01L29/78621
摘要： A first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor are formed using a plurality of single crystal grains, the plurality of single crystal grains being formed substantially centered on each of a plurality of starting-point portions disposed on an insulating surface of a substrate, the plurality of single crystal grains being composed of at least a first single crystal grain and a second single crystal grain adjacent to each other, with a crystal grain boundary therebetween, the first-conductivity-type thin film transistor includes at least a first-conductivity-type drain region formed adjacent to the crystal grain boundary in the first single crystal grain, the second-conductivity-type thin film transistor includes at least a second-conductivity-type drain region formed adjacent to the crystal grain boundary in the second single crystal grain, and a common electrode is provided on the crystal grain boundary to lead out outputs from the first-conductivity-type drain region and the second-conductivity-type drain region.
摘要翻译：使用多个单晶粒形成第一导电型薄膜晶体管和第二导电型薄膜晶体管，所述多个单晶粒基本上以多个起点部分为中心地设置，在基板的绝缘表面上，所述多个单晶粒由至少第一单晶粒和第二单晶相互相邻，其间具有晶界，所述第一导电型薄膜晶体管至少包括在第一单晶晶粒中与晶界相邻形成的第一导电型漏极区，第二导电型薄膜晶体管至少包括与第一单晶晶粒相邻形成的第二导电型漏极区在第二单晶晶粒中的晶界，并且在晶界上设置公共电极以引出来自冷杉的输出导电型漏极区域和第二导电型漏极区域。

56. 发明授权

US06972433B2 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device 失效
标题翻译：薄膜半导体器件，薄膜半导体器件本身，液晶显示器和电子器件的制造方法
公开(公告)号：US06972433B2
公开(公告)日：2005-12-06
申请号：US09885027
申请日：2001-06-21
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： F16C29/00 , G02F1/136 , G02F1/1362 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/324 , H01L21/336 , H01L29/49 , H01L29/786
CPC分类号： H01L29/66757 , F16C29/00 , F16C2360/45 , G02F1/13454 , G02F2202/104 , H01L21/0237 , H01L21/02521 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L21/28079 , H01L21/3105 , H01L29/4908 , H01L29/78675
摘要： In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450° C., and, after crystallization, keeping the maximum processing temperature at or below 350° C.In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.
摘要翻译：为了制造使用可以使用低价玻璃基板的低温工艺的高性能薄膜半导体器件，通过在低于450℃下形成硅膜制造薄膜半导体器件，并且结晶后，保持最高处理温度在350℃以下。在将本发明应用于有源矩阵液晶显示器的制造中，可以容易且可靠地制造大型，高品质的液晶显示器。此外，在将本发明应用于制造其它电子电路的同时，可以容易且可靠地制造高质量的电子电路。

57. 发明申请

US20050077911A1 Electrostatic capacitance detection device 有权
标题翻译：静电电容检测装置
公开(公告)号：US20050077911A1
公开(公告)日：2005-04-14
申请号：US10924993
申请日：2004-08-25
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： G01B7/28 , A61B5/117 , G01R27/26 , G06K9/00 , G06T1/00 , H01L21/336 , H01L21/768 , H01L29/786
CPC分类号： G06K9/0002
摘要： Aspects of the invention can provide an electrostatic capacitance detection device having M number of row lines and N number of column lines arranged in a matrix of M rows and N columns, and an electrostatic capacitance detection element formed at the intersection thereof. The electrostatic capacitance detection element can include a signal detection element, a signal amplifying element and a column selection element and a row selection element. The signal detection element can include a capacitance detecting electrode, a capacitance detecting dielectric layer, and a reference capacitor. One of a pair of electrodes in the reference capacitor is coupled to the row line. Accordingly, the invention can achieve a superior electrostatic capacitance detection device.
摘要翻译：本发明的方面可以提供一种静电电容检测装置，其具有M行行和N列列排列成M行和N列的矩阵，以及形成在其相交处的静电电容检测元件。静电电容检测元件可以包括信号检测元件，信号放大元件和列选择元件以及行选择元件。信号检测元件可以包括电容检测电极，电容检测电介质层和参考电容器。参考电容器中的一对电极中的一个耦合到行线。因此，本发明可以实现优异的静电电容检测装置。

58. 发明授权

US06808965B1 Methodology for fabricating a thin film transistor, including an LDD region, from amorphous semiconductor film deposited at 530° C. or less using low pressure chemical vapor deposition 失效
标题翻译：使用低压化学气相沉积法在530℃以下沉积的非晶半导体膜制造包括LDD区的薄膜晶体管的方法
公开(公告)号：US06808965B1
公开(公告)日：2004-10-26
申请号：US08406892
申请日：1995-03-27
申请人： Mitsutoshi Miyasaka , Yojiro Matsueda , Satoshi Takenaka
发明人： Mitsutoshi Miyasaka , Yojiro Matsueda , Satoshi Takenaka
IPC分类号： H01L2100
CPC分类号： H01L21/0262 , G02F1/13454 , G09G3/2011 , G09G3/3611 , G09G3/3648 , G09G3/3688 , G09G2310/027 , G09G2310/0283 , G09G2310/0289 , G09G2320/028 , G09G2330/021 , H01L21/0242 , H01L21/02488 , H01L21/02532 , H01L27/1214 , H01L29/66757 , H01L29/78618 , H01L29/78621 , H01L29/78627 , H01L29/78675
摘要： A high-performance thin-film semiconductor device and a simple fabrication method is provided. After a silicon film is deposited at approximately 530° C. or less and at a deposition rate of at least approximately 6 Å/minute, thermal oxidation is performed. This ensures an easy-and simple fabrication of a high-performance thin-film semiconductor device. A thin-film semiconductor device capable of low-voltage and high-speed drive is provided. The short-channel type of a TFT circuit with an LDD structure reduces a threshold voltage, increases speed, restrains the power consumption and increases a breakdown voltage. The operational speed of the thin-film semiconductor device is further increased by optimizing the maximum impurity concentration of an LDD portion, a source portion a drain portion, as well as optimizing the LDD length and the channel length. A display system is provided using these TFTs having drive signals at or below approximately the TTL level.
摘要翻译：提供了高性能的薄膜半导体器件和简单的制造方法。在约530℃或更低的沉积速率和至少约6 /分钟的沉积速率下沉积硅膜之后，进行热氧化。这确保了容易且简单地制造高性能薄膜半导体器件。提供能够进行低电压和高速驱动的薄膜半导体器件。具有LDD结构的TFT电路的短沟道类型降低阈值电压，增加速度，抑制功耗并增加击穿电压。通过优化LDD部分，源部分，漏极部分的最大杂质浓度以及优化LDD长度和沟道长度，进一步提高薄膜半导体器件的操作速度。使用具有等于或低于大约TTL电平的驱动信号的这些TFT来提供显示系统。

59. 发明授权

US06746903B2 Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and a method for fabricating solar cells and active matrix liquid crystal devices 有权
标题翻译：用于形成晶体半导体层的方法，制造薄膜晶体管的方法，以及制造太阳能电池和有源矩阵液晶器件的方法
公开(公告)号：US06746903B2
公开(公告)日：2004-06-08
申请号：US10099963
申请日：2002-03-19
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： H01L21339
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02675 , H01L21/2022 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perform a second annealing process consisting of rapid thermal annealing. This enables the formation of a high quality crystalline semiconductor film with high throughput but without subjecting the substrate to undue thermal stress. When this invention is applied to thin film transistors, good transistors having high performance are easily fabricated. When this invention is applied to solar cells, energy conversion efficiency is increased.
摘要翻译：可以通过在便宜的常规基板上形成半导体膜来形成晶体半导体层。接下来，进行第一退火处理，其中半导体膜的几乎整个表面暴露于激光照射或其他形式的照射，然后执行由快速热退火组成的第二退火工艺。这使得能够形成具有高生产能力的高质量结晶半导体膜，但不使基板受到不适当的热应力。当将本发明应用于薄膜晶体管时，容易制造具有高性能的良好晶体管。当本发明应用于太阳能电池时，能量转换效率提高。

60. 发明授权

US06673126B2 Multiple chamber fabrication equipment for thin film transistors in a display or electronic device 有权
标题翻译：用于显示器或电子设备中的薄膜晶体管的多腔室制造设备
公开(公告)号：US06673126B2
公开(公告)日：2004-01-06
申请号：US10189434
申请日：2002-07-08
申请人： Mitsutoshi Miyasaka
发明人： Mitsutoshi Miyasaka
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L21/67155 , H01L29/78681 , H01L29/78684 , Y10T29/41
摘要： TFT fabrication equipment including a first chamber for processing under oxidizing atmosphere, a second chamber for processing under reducing atmosphere, a third chamber for performing crystallization, a fourth chamber for load-locking, and a fifth chamber. A substrate is transferred from any one chamber of the first, second, third and fourth chamber to another chamber of the first, second, third and fourth chamber. The fifth chamber is connected to the first chamber via a first shutter, being connected to the second chamber via a second shutter, being connected to the third chamber via a third shutter, and being connected to the fourth chamber via a fourth shutter.
摘要翻译： TFT制造设备包括用于在氧化气氛下处理的第一室，用于在还原气氛下处理的第二室，用于进行结晶的第三室，用于装载锁定的第四室和第五室。衬底从第一，第二，第三和第四腔室的任何一个腔室转移到第一，第二，第三和第四腔室的另一腔室。第五室经由第一闸板连接到第一室，经由第二挡板连接到第二室，经由第三闸板连接到第三室，并通过第四闸板连接到第四室。

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