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51. 发明授权

US06228673B1 Method of fabricating a surface coupled InGaAs photodetector 有权
标题翻译：制造表面耦合的InGaAs光电探测器的方法
公开(公告)号：US06228673B1
公开(公告)日：2001-05-08
申请号：US09311673
申请日：1999-05-13
申请人： Robert Y. Loo , Adele E. Schmitz , Julia J. Brown
发明人： Robert Y. Loo , Adele E. Schmitz , Julia J. Brown
IPC分类号： H01L21302
CPC分类号： H01L31/1035 , H01L21/28575 , H01L29/452 , H01L31/02363 , H01L31/1844 , Y02E10/544
摘要： A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate, an n+ InP contact layer overlying the InP substrate, an undoped InGaAs absorbing layer overlying the n+ InP contact layer, and a p+ doped InGaAs layer overlying the undoped InGaAs absorbing layer. A gold-beryllium p-contact dot is deposited onto the p+ doped InGaAs layer of the multilayer structure. A mesa structure is etched with a citric acid-based etchant into the multilayer structure. The mesa structure includes the metal p-contact dot, the p+ doped InGaAs layer, and the undoped InGaAs absorbing layer. The n+ InP contact layer is patterned, and a passive metallic n-contact layer is deposited onto the patterned n+ InP contact layer. A polyimide insulator layer overlying a portion of the structure is deposited and patterned, so that the polyimide insulator layer does not cover the passive metal p-contact dot and the metallic n-contact layer. The patterned organic polymer insulator layer is cured and the device is passivated by heating it in a nitrogen atmosphere. Thick metallic gold contract traces are deposited, with one trace extending to the gold-beryllium p-contact dot and the other trace extending to the metallic n-contact layer.
摘要翻译：以具有半绝缘InP衬底，覆盖InP衬底的n + InP接触层，覆盖n + InP接触层的未掺杂InGaAs吸收层和覆盖未掺杂的InGaAs吸收层的p +掺杂InGaAs层制成多层结构的光电检测器。金 - 铍p接触点沉积到多层结构的p +掺杂的InGaAs层上。用基于柠檬酸的蚀刻剂蚀刻台面结构到多层结构中。台面结构包括金属p接触点，p +掺杂的InGaAs层和未掺杂的InGaAs吸收层。图案化n + InP接触层，并且将钝性金属n接触层沉积到图案化的n + InP接触层上。沉积并图案化覆盖在结构的一部分上的聚酰亚胺绝缘体层，使得聚酰亚胺绝缘体层不覆盖被动金属p接触点和金属n-接触层。图案化的有机聚合物绝缘体层被固化，并且通过在氮气气氛中加热来钝化该装置。沉积厚金属金合金痕迹，一条迹线延伸到金 - 铍p接触点，另一条迹线延伸到金属n-接触层。

52. 发明申请

US20140065750A1 PATTERNING METHOD FOR OLEDS 有权
标题翻译： OLED的绘图方法
公开(公告)号：US20140065750A1
公开(公告)日：2014-03-06
申请号：US13600444
申请日：2012-08-31
申请人： Siddharth Harikrishna Mohan , Paul E. Burrows , Julia J. Brown
发明人： Siddharth Harikrishna Mohan , Paul E. Burrows , Julia J. Brown
IPC分类号： H01L51/56
CPC分类号： H01L51/0005 , H01L27/3206 , H01L27/3209 , H01L27/3211 , H01L51/0008 , H01L51/5004 , H01L51/5016 , H01L51/5036 , H01L51/5056 , H01L51/5064 , H01L51/5072 , H01L51/508 , H01L51/5088 , H01L51/525 , H01L51/5253 , H01L51/5265 , H01L51/56 , H01L2227/323 , H01L2251/558
摘要： Methods of fabricating a device having laterally patterned first and second sub-devices, such as subpixels of an OLED, are provided. Exemplary methods may include depositing via organic vapor jet printing (OVJP) a first organic layer of the first sub-device and a first organic layer of the second sub-device. The first organic layer of the first sub-device and the first organic layer of the second sub-device are both the same type of layer, but have different thicknesses. The type of layer is selected from an ETL, an HTL, an HIL, a spacer and a capping layer.
摘要翻译：提供了制造具有横向图案化的第一和第二子装置（例如OLED的子像素）的装置的方法。示例性方法可以包括通过有机蒸汽喷射印刷（OVJP）沉积第一子装置的第一有机层和第二子装置的第一有机层。第一子装置的第一有机层和第二子装置的第一有机层是相同类型的层，但具有不同的厚度。层的类型选自ETL，HTL，HIL，间隔物和覆盖层。

53. 发明授权

US08592253B2 Hybrid layers for use in coatings on electronic devices or other articles 有权
标题翻译：用于电子设备或其他物品上的涂料的混合层
公开(公告)号：US08592253B2
公开(公告)日：2013-11-26
申请号：US12990860
申请日：2009-05-05
申请人： Prashant Mandlik , Sigurd Wagner , Jeffrey A. Silvernail , Ruiqing Ma , Julia J. Brown , Lin Han
发明人： Prashant Mandlik , Sigurd Wagner , Jeffrey A. Silvernail , Ruiqing Ma , Julia J. Brown , Lin Han
IPC分类号： H01L21/44 , H01L21/48
CPC分类号： H01L51/5253 , C23C16/02 , C23C16/0272 , C23C16/04 , C23C16/22 , C23C16/30 , C23C16/40 , C23C16/45523 , C23C16/505 , C23C16/517 , C23C16/52 , C23C30/00 , H01L51/5203 , H01L51/5259 , H01L51/56 , H01L2251/301 , H01L2251/303 , H01L2251/566
摘要： A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.
摘要翻译：一种用于保护包括有机器件本体的电子器件的方法。该方法涉及使用通过化学气相沉积沉积的混合层。混合层包括聚合材料和非聚合材料的混合物，其中聚合物与非聚合材料的重量比在95:5至5:95的范围内，其中聚合材料和非聚合材料聚合物材料由相同的前体材料源产生。还公开了用于阻止环境污染物的横向扩散的技术。

54. 发明授权

US07683536B2 OLEDs utilizing direct injection to the triplet state 有权
标题翻译：利用直接注入三重态的OLED
公开(公告)号：US07683536B2
公开(公告)日：2010-03-23
申请号：US11274091
申请日：2005-11-16
申请人： Stephen Forrest , Julia J. Brown , Mark E. Thompson
发明人： Stephen Forrest , Julia J. Brown , Mark E. Thompson
IPC分类号： H05B33/00 , H01L51/50
CPC分类号： H01L51/5004 , H01L51/5016 , H01L51/5056 , H01L51/5072 , H01L2251/552 , Y10T428/24942
摘要： The present invention relates to OLEDs utilizing direct injection to the triplet state. The present invention also relates to OLEDs utilizing resonant injection and/or stepped energy levels.
摘要翻译：本发明涉及利用直接注入三重态的OLED。本发明还涉及利用谐振注入和/或阶梯能级的OLED。

55. 发明授权

US06897474B2 Protected organic electronic devices and methods for making the same 有权
标题翻译：受保护的有机电子器件及其制造方法
公开(公告)号：US06897474B2
公开(公告)日：2005-05-24
申请号：US10407820
申请日：2003-04-04
申请人： Julia J. Brown , Michael Stuart Weaver , Min-Hao Michael Lu
发明人： Julia J. Brown , Michael Stuart Weaver , Min-Hao Michael Lu
IPC分类号： H01L51/52 , H01L35/24
CPC分类号： H01L51/5246 , H01L51/5256 , H01L51/5259 , H01L51/5265 , H01L2251/5338
摘要： An organic electronic device structure and a method of making the same. According to a first aspect of the invention, an organic electronic device structure is provided, which comprises: (a) a substrate layer; (b) an organic electronic region disposed over the substrate layer; (c) an adhesive layer disposed over the organic electronic device; and (d) a barrier layer disposed over the adhesive layer. According to a second aspect of the present invention, an organic electronic device structure is provided, which comprises: (a) a substrate layer; (b) an organic electronic region disposed over the substrate layer; (c) a barrier layer disposed over the organic electronic region; (d) an adhesive layer disposed over the substrate layer and over the barrier layer; and (e) an additional layer disposed over the adhesive layer. According to yet another aspect of the invention, a method for providing an organic electronic device structure of provided. The method comprises: (1) providing a first region comprising (a) a substrate layer and (b) an organic electronic region provided over the substrate layer; (2) providing a second region comprising at least one additional layer; and (3) adhering the first region to the second region using a pressure sensitive adhesive layer. In many preferred embodiments, the organic electronic device region is an OLED region.
摘要翻译：一种有机电子器件结构及其制造方法。根据本发明的第一方面，提供了一种有机电子器件结构，其包括：（a）衬底层; （b）设置在所述衬底层上的有机电子区域; （c）设置在有机电子装置上方的粘合剂层; 和（d）设置在粘合剂层上的阻挡层。根据本发明的第二方面，提供一种有机电子器件结构，其包括：（a）衬底层; （b）设置在所述衬底层上的有机电子区域; （c）设置在有机电子区域上的阻挡层; （d）设置在所述衬底层上方并在所述阻挡层上方的粘合剂层; 和（e）设置在粘合剂层上的附加层。根据本发明的另一方面，提供一种提供有机电子器件结构的方法。该方法包括：（1）提供第一区域，其包含（a）基底层和（b）设置在基底层上的有机电子区域; （2）提供包括至少一个附加层的第二区域; 和（3）使用压敏粘合剂层将第一区域粘合到第二区域。在许多优选实施例中，有机电子器件区域是OLED区域。

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