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51. 发明授权

US06392864B1 Electrical driver circuit for direct acting cantilever solenoid valve 失效
标题翻译：直动悬臂电磁阀电驱动电路
公开(公告)号：US06392864B1
公开(公告)日：2002-05-21
申请号：US09393540
申请日：1999-09-10
申请人： Jing Tang , Jeff White
发明人： Jing Tang , Jeff White
IPC分类号： H01H4700
CPC分类号： B60T8/36 , B60T8/362 , H01F7/1872
摘要： An electrical driver circuit for a cantilever solenoid valve includes first and second electrical switching devices for converting logical control input signals into respective control outputs. Third and fourth electrical switching devices are controlled as a function of the control output produced by the first switching device. Fifth and sixth electrical switching devices are controlled as a function of the control output produced by the second switching device. A voltage potential difference is created between a first electrically common point, defined between the third and fourth switching devices, and a second electrically common point, defined between the fifth and sixth switching devices, as a function of the logical signals received into the first and second switching devices.
摘要翻译：用于悬臂电磁阀的电驱动器电路包括用于将逻辑控制输入信号转换成相应控制输出的第一和第二电开关装置。第三和第四电气开关装置被控制为由第一开关装置产生的控制输出的函数。第五和第六电气开关装置被控制为由第二开关装置产生的控制输出的函数。在第三和第四开关装置之间限定的第一电气公共点和第五和第六开关装置之间限定的第二电气公共点之间产生电压电位差，作为接收到第一和第二开关装置的逻辑信号的函数第二开关装置。

52. 发明授权

US09096796B2 Luminescent element, preparation method thereof and luminescence method 有权
标题翻译：发光元件及其制备方法和发光方法
公开(公告)号：US09096796B2
公开(公告)日：2015-08-04
申请号：US13392398
申请日：2009-08-26
申请人： Mingjie Zhou , Wenbo Ma , Yugang Liu , Jing Tang , Chaopu Shi , Qingtao Li
发明人： Mingjie Zhou , Wenbo Ma , Yugang Liu , Jing Tang , Chaopu Shi , Qingtao Li
IPC分类号： H01J23/34 , C09K11/57 , C03C14/00 , C03C17/06 , C09K11/02 , H01J63/04
CPC分类号： C09K11/574 , C03C14/004 , C03C17/06 , C03C2214/04 , C03C2217/251 , C09K11/02 , H01J63/04 , Y10T428/26 , Y10T428/31678
摘要： A luminescent element comprises: a luminescent substrate; and a metal layer with a metal microstructure formed on a surface of the luminescent substrate; the luminescent substrate comprises luminescent materials with a chemical composition of Zn2SiO4:Mn. A preparation method of a luminescent element and a luminescence method are also provided. The luminescent element has good luminescence homogeneity, high luminescence efficiency, good luminescence stability and simple structure, and can be used in luminescent device with ultrahigh brightness.
摘要翻译：发光元件包括：发光基板; 以及在所述发光基板的表面上形成有金属微观结构的金属层; 发光基板包括化学组成为Zn2SiO4：Mn的发光材料。还提供了发光元件的制备方法和发光方法。发光元件具有良好的发光均匀性，发光效率高，发光稳定性好，结构简单，可用于超高亮度发光装置。

53. 发明授权

US08670813B2 Systems and methods for analysis and treatment of an occluded body lumen 失效
标题翻译：用于分析和治疗闭塞体腔的系统和方法
公开(公告)号：US08670813B2
公开(公告)日：2014-03-11
申请号：US13600718
申请日：2012-08-31
申请人： Jing Tang
发明人： Jing Tang
IPC分类号： A61B5/00 , A61B6/00
CPC分类号： A61B5/0071 , A61B5/0075 , A61B5/0084 , A61B5/1459 , A61B17/3207 , A61B2017/00061 , A61B2017/00066 , A61B2017/003 , A61B2017/22038 , A61B2017/22042 , A61M25/104
摘要： Systems and methods are provided for probing an occluded body lumen, including a flexible conduit insertable into the body lumen, at least one delivery waveguide and at least one collection waveguide integrated with the flexible conduit and arranged to deliver and collect radiation about a distal end of said flexible conduit, at least one radiation source connected to a transmission input of the at least one delivery waveguide, at least one optical detector connected to a transmission output of at least one collection waveguide, a spectrometer connected with the at least one optical detector, and constructed and arranged to scan radiation and perform spectroscopy, and a controller programmed to process data from said spectrometer and provide information for directing said flexible conduit through obstacles within the occluded body lumen.
摘要翻译：提供了系统和方法，用于探测闭塞的体腔，包括可插入体腔的柔性导管，至少一个输送波导和与柔性导管集成的至少一个收集波导，并布置成递送和收集围绕远端的辐射所述柔性管道，连接到所述至少一个传送波导的传输输入的至少一个辐射源，连接到至少一个收集波导的传输输出的至少一个光学检测器，与所述至少一个光学检测器连接的光谱仪，并构造和布置成扫描辐射并执行光谱学，以及被编程为处理来自所述光谱仪的数据并提供用于引导所述柔性导管通过封闭体腔内的障碍物的信息的控制器。

54. 发明授权

US08649784B2 System and method for remote household appliance control based on mobile communication network 有权
标题翻译：基于移动通信网络的远程家电控制系统和方法
公开(公告)号：US08649784B2
公开(公告)日：2014-02-11
申请号：US13634293
申请日：2010-08-24
申请人： Lei Gao , Yonghua Luo , Jing Tang
发明人： Lei Gao , Yonghua Luo , Jing Tang
IPC分类号： H04W4/14
CPC分类号： H04W4/14 , G08C2201/42 , G08C2201/93 , H04L12/2818 , H04M11/007 , H04W4/80
摘要： A system and a method for remote household appliance control based on a mobile communication network are provided. The system includes: a remote control access device and a remote control executor. The method includes: saving a first corresponding relationship between an infrared code type and identification information of a corresponding controlled household appliance and an operation act; and after receiving an unstructured supplementary service data (USSD) session request from a mobile terminal, sending a locally stored USSD menu to the mobile terminal and starting a USSD session with the mobile terminal; after receiving a USSD session content related to performing an operation act on a household appliance from the mobile terminal, transmitting an infrared control signal according to the corresponding infrared code type searched out according to the first corresponding relationship. The remote control of household appliance is realized conveniently by combining USSD and infrared remote control technologies.
摘要翻译：提供了一种基于移动通信网络进行远程家用电器控制的系统和方法。该系统包括：远程控制访问设备和远程控制执行器。该方法包括：保存红外线代码类型和对应受控家用电器的识别信息与操作动作之间的第一对应关系; 并且在从移动终端接收到非结构化补充业务数据（USSD）会话请求之后，向所述移动终端发送本地存储的USSD菜单并开始与所述移动终端的USSD会话; 在从移动终端接收到与在家用电器上执行操作动作有关的USSD会话内容之后，根据第一对应关系搜索到的相应的红外线代码类型发送红外控制信号。通过结合USSD和红外遥控技术，方便实现家用电器遥控。

55. 发明申请

US20130292806A1 Methods For Manganese Nitride Integration 有权
标题翻译：锰氮化一体化方法
公开(公告)号：US20130292806A1
公开(公告)日：2013-11-07
申请号：US13905932
申请日：2013-05-30
申请人： Paul F. Ma , Jennifer Meng Tseng , Mei Chang , Annamalai Lakshmanan , Jing Tang
发明人： Paul F. Ma , Jennifer Meng Tseng , Mei Chang , Annamalai Lakshmanan , Jing Tang
IPC分类号： H01L29/06 , H01L21/02
CPC分类号： H01L29/06 , C23C16/34 , C23C16/45525 , H01L21/02104 , H01L21/28556 , H01L21/28562 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76867 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.
摘要翻译：描述了形成半导体器件的方法。某些方法包括在电介质上沉积包含氮化锰的膜; 在该膜上沉积铜种子层; 以及在铜种子层上沉积铜填充层。还描述了半导体器件。某些半导体器件包括低k电介质层; 覆盖低k电介质层的氮化锰层; 选自铜籽晶层或覆盖氮化锰层的电化学沉积种子层的晶种层; 覆铜层的铜层。

56. 发明申请

US20130273733A1 Methods for Depositing Manganese and Manganese Nitrides 有权
标题翻译：锰和锰氮化物的沉积方法
公开(公告)号：US20130273733A1
公开(公告)日：2013-10-17
申请号：US13860618
申请日：2013-04-11
申请人： Jing Tang , Zhefeng Li , Paul F. Ma , David Thompson
发明人： Jing Tang , Zhefeng Li , Paul F. Ma , David Thompson
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76867 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film.
摘要翻译：描述的是含锰膜，以及提供含锰膜的方法。具有Co，Mn，Ru，Ta，Al，Mg，Cr，Nb，Ti或V的掺杂含锰膜能够提高含锰膜的铜屏障性能。还描述了提供具有包含硅酸锰的第一层和包含含锰膜的第二层的膜的方法。

57. 发明授权

US08501629B2 Smooth SiConi etch for silicon-containing films 有权
标题翻译：对含硅膜进行平滑SiConi蚀刻
公开(公告)号：US08501629B2
公开(公告)日：2013-08-06
申请号：US12646030
申请日：2009-12-23
申请人： Jing Tang , Nitin Ingle , Dongqing Yang
发明人： Jing Tang , Nitin Ingle , Dongqing Yang
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32357 , H01J2237/3341
摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.
摘要翻译：描述了一种蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有比氟更大或更小的氢流量比的SiConi TM蚀刻。已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率差异。降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，维持相对高的衬底温度并以多个步骤执行SiConi TM。单独或组合的这些方法中的每一种用于通过限制固体残留物颗粒尺寸来减少蚀刻表面的粗糙度。

58. 发明授权

US08445884B2 Memristor with nanostructure electrodes 有权
标题翻译：忆阻器与纳米结构电极
公开(公告)号：US08445884B2
公开(公告)日：2013-05-21
申请号：US13130830
申请日：2009-01-15
申请人： Qiangfei Xia , Jing Tang
发明人： Qiangfei Xia , Jing Tang
IPC分类号： H01L29/02
CPC分类号： G11C13/0009 , B82Y10/00 , G11C13/0002 , G11C13/025 , G11C2213/33 , G11C2213/77 , G11C2213/81 , H01L27/101 , H01L27/2472 , H01L45/08 , H01L45/1226 , H01L45/1233 , H01L45/1273 , H01L45/146
摘要： A memristor having an active region includes a first electrode. The first electrode comprises a nanostructure formed of at least one metallic single walled nanotube. The memristor also includes a second electrode formed of at least one metallic single walled nanotube. The second electrode is positioned in a crossed relationship with respect to the first electrode. The memristor further includes a switching material positioned between the first electrode and the second electrode, in which the active region is configured to form in the switching material at a cross point of the first electrode and the second electrode.
摘要翻译：具有有源区的忆阻器包括第一电极。第一电极包括由至少一个金属单壁纳米管形成的纳米结构。忆阻器还包括由至少一个金属单壁纳米管形成的第二电极。第二电极相对于第一电极以交叉的关系定位。忆阻器还包括位于第一电极和第二电极之间的开关材料，其中有源区被配置为在开关材料中在第一电极和第二电极的交叉点处形成。

59. 发明授权

US08435902B2 Invertable pattern loading with dry etch 有权
标题翻译：用干蚀刻反转图案加载
公开(公告)号：US08435902B2
公开(公告)日：2013-05-07
申请号：US12959155
申请日：2010-12-02
申请人： Jing Tang , Nitin Ingle , Dongqing Yang , Shankar Venkataraman
发明人： Jing Tang , Nitin Ingle , Dongqing Yang , Shankar Venkataraman
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311 , C23F3/00
CPC分类号： H01L21/31116 , H01J37/32091
摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.
摘要翻译：描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。该方法包括两个干蚀刻循环。第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。

60. 发明申请

US20120187467A1 FLOATING GATES AND METHODS OF FORMATION 有权
标题翻译：浮动门和形成方法
公开(公告)号：US20120187467A1
公开(公告)日：2012-07-26
申请号：US13193573
申请日：2011-07-28
申请人： Matthew Scott Rogers , Po-Ta Chen , Jing Tang
发明人： Matthew Scott Rogers , Po-Ta Chen , Jing Tang
IPC分类号： H01L29/788 , H01L21/31
CPC分类号： H01L21/28273 , H01L21/31116 , H01L21/32105 , H01L21/3211 , H01L21/32137 , H01L27/11521 , H01L29/42324
摘要： The present invention generally relates to a floating gate structure and method of forming the same. The floating gate structure has an upper portion which is wider than a middle portion of the floating gate structure. The upper portion may have a flared, rounded or bulbous shape instead of being pointed or having sharp corners. The reduction in pointed or sharp features of the upper portion reduces the electric field intensity near the upper portion, which decreases current leakage through the interpoly dielectric. The method includes forming a nitride cap on the upper surface of the floating gate structure to assist in shaping the floating gate. The floating gate is then formed using multiple selective oxidation and etching processes.
摘要翻译：本发明一般涉及浮栅结构及其形成方法。浮栅结构具有比浮栅结构的中间部分宽的上部。上部可以具有喇叭形，圆形或球形形状，而不是尖的或具有尖角。上部的尖锐或尖锐特征的减小减小了上部附近的电场强度，这减少了通过多晶硅电介质的电流泄漏。该方法包括在浮动栅极结构的上表面上形成氮化物盖，以帮助浮动栅极成形。然后使用多个选择性氧化和蚀刻工艺形成浮栅。

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