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    • 51. 发明授权
    • Method of making a field effect transistor with overlay gate structure
    • 制造具有覆盖栅极结构的场效应晶体管的方法
    • US4839304A
    • 1989-06-13
    • US134123
    • 1987-12-17
    • Hiroshi Morikawa
    • Hiroshi Morikawa
    • H01L29/417H01L21/285H01L21/318H01L21/338H01L21/768H01L23/522H01L29/812
    • H01L29/66863H01L21/28587Y10S148/143
    • For reduction in parasitic capacitance of a overlay gate structure, there is disclosed a process of fabricating a MES type field effect transistor comprising the steps of (a) preparing a semi-insulating substrate with a surface having a gate forming area and a remaining area, (b) forming a gate electrode on the gate forming area of the surface of the semi-insulating substrate, the gate electrode having an upper surface and side walls, (c) forming a protection film on the upper surface and the side walls of the gate electrode and the remaining area of the surface of the semi-insulating substrate, (d) covering the protection film with a material which is different in etching rate from the protection film, (e) forming a filling layer of the material for creating a generally smooth topography by removing a part of the material over the gate electrode and a part of the protection film on the upper surface of the gate electrode, the filling layer having an upper surface substantially coplanar to the upper surface of the gate electrode, (f) forming a conductive layer on the upper surface of the gate electrode and the upper surface of the filling layer, and (g) removing the filling layer so as to cause the conductive layer to be spaced from a part of the protection film on the remaining area of the surface of the semi-insulating layer, so that the conductive layer does not contact with the filling layer, typically an insulating material.
    • 为了减小覆盖栅极结构的寄生电容,公开了一种制造MES型场效应晶体管的工艺,其包括以下步骤:(a)制备具有栅极形成区域和剩余区域的表面的半绝缘基板, (b)在半绝缘基板的表面的栅极形成区域上形成栅电极,栅电极具有上表面和侧壁,(c)在上表面和侧壁上形成保护膜 栅电极和半绝缘基板的表面的剩余面积,(d)用与保护膜的蚀刻速率不同的材料覆盖保护膜,(e)形成用于形成保护膜的材料的填充层 通过在栅电极上去除一部分材料并在栅极电极的上表面上保护膜的一部分去除一般的平滑形貌,填充层具有上表面基本上是平的 r到栅电极的上表面,(f)在栅电极的上表面和填充层的上表面上形成导电层,(g)去除填充层,以使导电层 与半绝缘层的表面的剩余区域上的保护膜的一部分隔开,使得导电层不与填充层(通常为绝缘材料)接触。
    • 60. 发明申请
    • Output apparatus and program thereof
    • 输出装置及程序
    • US20060119897A1
    • 2006-06-08
    • US10521166
    • 2004-12-08
    • Hiroshi Morikawa
    • Hiroshi Morikawa
    • H04N1/409
    • G06T3/403G06T5/002H04N1/4092
    • Output apparatus including a vectorization unit for vectorizing part of bitmap data into first vector data, a data production unit for producing bitmap data after transformation, and an output unit of outputting that bitmap data. The data production unit includes an inverse transformation unit for transforming first coordinate information of a target dot with an inverse function of a certain calculation, and a color determination unit for determining the color of a dot specified by second coordinate information based on the first vector data and the color of a dot on the bitmap data so that the color determined thereby is setup for a dot specified by first coordinate information, and a control unit for enabling the inverse transformation and the color determination to be performed on all dots on the bitmap data to be outputted. Thereby, jaggy-less bitmap data can be outputted without losing its image quality.
    • 输出装置,包括用于将位图数据的一部分矢量化为第一矢量数据的矢量化单元,用于在变换后产生位图数据的数据生成单元,以及输出该位图数据的输出单元。 数据生成单元包括:逆变换单元,用于利用一定计算的反函数变换目标点的第一坐标信息;以及颜色确定单元,用于基于第一矢量数据确定由第二坐标信息指定的点的颜色 以及位图数据上的点的颜色,使得由此确定的颜色被设置为由第一坐标信息指定的点,以及控制单元,用于对位图数据上的所有点执行逆变换和颜色确定 被输出。 因此,可以输出无锯齿位图数据而不失去其图像质量。