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51. 发明授权

US08421102B2 Semiconductor light-emitting device having a member in a periphery made of a material whose color, transparency or adhesiveness changes overtime due to light or heat emission from the emitting element 有权
标题翻译：半导体发光器件具有由周边部件构成的材料，其颜色，透明度或粘合性由于来自发光元件的光或热发射而随时间变化
公开(公告)号：US08421102B2
公开(公告)日：2013-04-16
申请号：US12618043
申请日：2009-11-13
申请人： Toshio Hata , Nobuaki Aoki
发明人： Toshio Hata , Nobuaki Aoki
IPC分类号： H01L29/267
CPC分类号： H01L33/44 , F21K9/232 , F21K9/64 , F21S8/02 , F21V3/02 , F21V3/04 , F21Y2115/10 , H01L2224/48091 , H01L2924/00014
摘要： A light-emitting device in accordance with an embodiment of the present invention includes a semiconductor light-emitting element, and a member in the periphery of the semiconductor light-emitting element is made of a material whose color, transparency or adhesiveness changes over time as it is subjected to light or heat emitted by the semiconductor light-emitting element.
摘要翻译：根据本发明实施例的发光器件包括半导体发光元件，并且半导体发光元件周围的部件由颜色，透明度或粘合性随时间而变化的材料制成它受到由半导体发光元件发出的光或热。

52. 发明申请

US20110244606A1 CHIP-TYPE LED AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：芯片型LED及其制造方法
公开(公告)号：US20110244606A1
公开(公告)日：2011-10-06
申请号：US13162295
申请日：2011-06-16
申请人： Makoto MATSUDA , Toshio Hata
发明人： Makoto MATSUDA , Toshio Hata
IPC分类号： H01L33/52
CPC分类号： H01L33/486 , H01L33/508 , H01L33/54 , H01L33/62 , H01L2224/45144 , H01L2224/48227 , H01L2224/48228 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： In a chip-type LED according to an embodiment of the present invention, a first recess hole for mounting an LED chip and a second recess hole for connecting a fine metal wire are formed in an insulating substrate, a metal sheet serving as a first wiring pattern is formed at a portion that includes the first recess hole, a metal sheet serving as a second wiring pattern is formed at a portion that includes the second recess hole, an LED chip is mounted on the metal sheet within the first recess hole, the LED chip is electrically connected to the metal sheet within the second recess hole via a fine metal wire, the LED chip including the first recess hole and the fine metal wire including the second recess hole are encapsulated in a first transparent resin that contains a fluorescent material, a surface of the insulating substrate including the first transparent resin is encapsulated in a second transparent resin.
摘要翻译：在根据本发明的实施例的芯片型LED中，在绝缘基板中形成用于安装LED芯片的第一凹部孔和用于连接细金属丝的第二凹部孔，用作第一布线在包括第一凹槽的部分形成图案，在包括第二凹槽的部分形成用作第二布线图案的金属片，在第一凹槽内的金属片上安装LED芯片， LED芯片通过细金属线电连接到第二凹槽内的金属片，包括第一凹部孔和包括第二凹部孔的细金属线的LED芯片封装在包含荧光材料的第一透明树脂中包含第一透明树脂的绝缘基板的表面被封装在第二透明树脂中。

53. 发明申请

US20110180817A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110180817A1
公开(公告)日：2011-07-28
申请号：US13011124
申请日：2011-01-21
申请人： Shinya ISHIZAKI , Makoto Agatani , Tomokazu Nada , Toshio Hata
发明人： Shinya ISHIZAKI , Makoto Agatani , Tomokazu Nada , Toshio Hata
IPC分类号： H01L27/15
CPC分类号： H01L25/0753 , F21K9/232 , F21K9/238 , F21V3/00 , F21V5/048 , F21V23/005 , F21V29/74 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , H01L25/167 , H01L27/15 , H01L27/156 , H01L33/38 , H01L33/483 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01L2224/48137 , H01L2924/3011 , H01L2924/00
摘要： A light emitting device includes: a ceramic substrate; a plurality of LED chips; a printed resistor(s) connected in parallel with the plurality of LED chips; a dam resin made of a resin having a low optical transmittance; a fluorescent-material-containing resin layer; and an anode-side electrode and a cathode-side electrode, (a) which are provided on a primary surface of the ceramic substrate so as to face each other along a first direction on the primary surface and (b) which are disposed below at least one of the dam resin and the fluorescent-material-containing resin layer. With the configuration in which a plurality of LEDs, which are connected in a series-parallel connection, are provided on a substrate, it is possible to provide a light emitting device which can achieve restraining of luminance unevenness and an improvement in luminous efficiency.
摘要翻译：发光器件包括：陶瓷衬底; 多个LED芯片; 与所述多个LED芯片并联连接的印刷电阻器; 由透光率低的树脂制成的树脂树脂; 含荧光材料的树脂层; 以及阳极侧电极和阴极侧电极（a），其设置在所述陶瓷基板的主面上，以在所述主面上沿着第一方向彼此面对，以及（b）设置在所述主表面的下方至少一个坝树脂和含荧光材料的树脂层。通过在基板上设置串联并联连接的多个LED的结构，可以提供能够实现亮度不均匀性的抑制和发光效率的提高的发光装置。

54. 发明申请

US20100133571A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100133571A1
公开(公告)日：2010-06-03
申请号：US12625993
申请日：2009-11-25
申请人： Osamu Kawasaki , Toshio Hata
发明人： Osamu Kawasaki , Toshio Hata
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L33/50 , H01L33/56 , H01L33/60 , H01L2224/48227 , H01L2224/48465 , H01L2924/13091 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： To provide a light emitting device easy to produce and extracting light to its outside with high efficiency, the light-emitting device 70 of the present invention includes an insulating base 10; a light-emitting element 1 mounted on a side of the base 10; and a protection element 2 mounted on the side and protecting the light-emitting element 1. The element 2 is covered with a light-reflecting filler-containing resin 5, which is prepared by causing a flexible silicone resin to contain, before being cured, light-reflecting or light-scattering fillers 5a having a particle diameter larger than the wavelength of light emitted by the element 1. This causes light emitted from the element 1 to be reflected by the resin 5, instead of being absorbed by the element 2, so that such light is released to the outside of the light-emitting device 70. This allows the device 70 to extract light to the outside with high efficiency, and also allows for easy formation of the resin 5 having a desired pattern and position.
摘要翻译：本发明的发光装置70为了提供容易产生高效率地向其外部产生光的发光装置，具有绝缘基座10，安装在基座10一侧的发光元件1; 以及安装在侧面并保护发光元件1的保护元件2.元件2被含有光反射填料的树脂5覆盖，该树脂5通过使柔性硅树脂在固化之前包含，光反射或光散射填料5a，其粒径大于由元件1发射的光的波长。这使得从元件1发射的光被树脂5反射，而不是被元件2吸收，使得这样的光被释放到发光装置70的外部。这允许装置70以高效率将光提取到外部，并且还允许容易地形成具有期望的图案和位置的树脂5。

55. 发明申请

US20060226434A1 Nitride-based semiconductor light emitting device and manufacturing method thereof 审中-公开
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US20060226434A1
公开(公告)日：2006-10-12
申请号：US11403511
申请日：2006-04-12
申请人： Toshio Hata
发明人： Toshio Hata
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/20
摘要： A present nitride-based semiconductor light emitting device includes: a pattern surface formed on a conductive substrate; a multilayered metal layer formed on the pattern surface; and a multilayered semiconductor layer formed on the multilayered metal layer, and characterized in that main surfaces of the multilayered metal layer and the multilayered semiconductor layer have smaller area than the pattern surface has, and the multilayered semiconductor layer includes a p type nitride-based semiconductor layer, a light emitting layer and an n type nitride-based semiconductor layer. Thus, a highly reliable nitride-based semiconductor light emitting device with excellent adhesion between a nitride-based semiconductor layer and a conductive substrate, and a manufacturing method thereof are provided.
摘要翻译：本发明的氮化物系半导体发光元件包括：形成在导电性基板上的图案表面; 形成在图案表面上的多层金属层; 以及形成在所述多层金属层上的多层半导体层，其特征在于，所述多层金属层和所述多层半导体层的主表面的面积比所述图案表面的面积小，并且所述多层半导体层包括p型氮化物系半导体层，发光层和n型氮化物系半导体层。因此，提供了一种在氮化物系半导体层和导电性基板之间具有优异的粘附性的高度可靠的氮化物系半导体发光元件及其制造方法。

56. 发明授权

US06887311B2 Method of forming ohmic electrode 有权
标题翻译：形成欧姆电极的方法
公开(公告)号：US06887311B2
公开(公告)日：2005-05-03
申请号：US10283371
申请日：2002-10-30
申请人： Mayuko Fudeta , Toshio Hata
发明人： Mayuko Fudeta , Toshio Hata
IPC分类号： H01L21/28 , H01L21/285 , H01L29/20 , H01L29/45 , H01L33/32 , H01L33/42 , H01L33/62 , H01S5/042 , H01S5/323 , H01S5/343 , C30B1/10
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32
摘要： There is provided a method of forming an ohmic electrode, including the steps of: forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm; forming an aluminum layer on the hafnium layer; and annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together.
摘要翻译：提供一种形成欧姆电极的方法，包括以下步骤：在n型氮化物基化合物半导体层的表面上形成具有1至15nm厚度的铪层; 在铪层上形成铝层; 并且将铪层和铝层退火以形成由铪和铝组成的层。

57. 发明申请

US20050017253A1 Nitride-based compound semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系化合物半导体发光元件及其制造方法
公开(公告)号：US20050017253A1
公开(公告)日：2005-01-27
申请号：US10897548
申请日：2004-07-23
申请人： Toshio Hata
发明人： Toshio Hata
IPC分类号： H01L27/15 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/38 , H01L33/42 , H01S5/00
CPC分类号： H01L33/24 , H01L33/0079 , H01L33/32 , H01L33/385 , H01L33/405 , H01L2933/0016
摘要： A nitride-based compound semiconductor light-emitting device comprising a holding electrode partially formed on a first main surface of a semiconductor laminate including nitride-based compound semiconductor layers including at an emission layer. A method of fabricating a nitride-based compound semiconductor light-emitting device, comprising steps of forming a semiconductor laminate by stacking nitride-based compound semiconductor layers at least partially on a substrate to include an emission layer, forming a holding electrode partially on a main surface of the semiconductor laminate located oppositely to the substrate and removing the substrate. Thus, a nitride-based compound semiconductor light-emitting device having high external luminous efficiency with no wafer breakage or cracking and a method of fabricating the same can be proposed.
摘要翻译：一种氮化物系化合物半导体发光器件，包括部分地形成在包括发光层的氮化物类化合物半导体层的半导体层叠体的第一主表面上的保持电极。一种制造氮化物基化合物半导体发光器件的方法，包括以下步骤：至少部分地将氮化物基化合物半导体层堆叠在衬底上以形成半导体层叠体，以包括发射层，部分地在主体上形成保持电极所述半导体层叠体的表面与所述基板相对设置并且移除所述基板。因此，可以提出具有高的外部发光效率而没有晶片破裂或破裂的氮化物基化合物半导体发光器件及其制造方法。

58. 发明申请

US20050006660A1 Nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20050006660A1
公开(公告)日：2005-01-13
申请号：US10912294
申请日：2004-08-04
申请人： Toshio Hata , Mayuko Fudeta , Daigaku Kimura
发明人： Toshio Hata , Mayuko Fudeta , Daigaku Kimura
IPC分类号： H01L33/00 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/34 , H01L33/38 , H01L33/42
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0079
摘要： The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.
摘要翻译：发光器件包括从Si衬底侧依次层叠在Si（硅）衬底上的p型氮化物半导体层，发光层和n型氮化物半导体层。部分去除Si衬底以暴露p型氮化物半导体层的一部分。在p型氮化物半导体层的露出区域上形成p型电极。

59. 发明授权

US5970080A Gallium nitride compound semiconductor light emitting element and method for fabricating the same 失效
标题翻译：氮化镓化合物半导体发光元件及其制造方法
公开(公告)号：US5970080A
公开(公告)日：1999-10-19
申请号：US810574
申请日：1997-03-03
申请人： Toshio Hata
发明人： Toshio Hata
IPC分类号： H01S5/02 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32341 , H01S2304/04 , H01S5/0213 , H01S5/0422 , H01S5/209 , H01S5/22 , H01S5/2231
摘要： The gallium nitride compound semiconductor light emitting element includes: a substrate; a first semiconductor multilayer structure including, at least, an active layer, a first cladding layer of a first conductivity type, and a second cladding layer of a second conductivity type, the first and second cladding layers sandwiching the active layer therebetween; a dry etching stop layer of the second conductivity type formed on the first semiconductor multilayer structure; and a second semiconductor multilayer structure formed on the dry etching stop layer.
摘要翻译：氮化镓化合物半导体发光元件包括：基板; 至少包括有源层，第一导电类型的第一包层和第二导电类型的第二包层的第一半导体多层结构，所述第一和第二覆层在其间夹着有源层; 形成在第一半导体多层结构上的第二导电类型的干蚀刻停止层; 以及形成在所述干蚀刻停止层上的第二半导体多层结构。

60. 发明授权

US5581584A PLL circuit 失效
标题翻译： PLL电路
公开(公告)号：US5581584A
公开(公告)日：1996-12-03
申请号：US277951
申请日：1994-07-20
申请人： Atsushi Inoue , Toshio Hata , Osamu Tamakoshi , Takayasu Komaki
发明人： Atsushi Inoue , Toshio Hata , Osamu Tamakoshi , Takayasu Komaki
IPC分类号： H03L7/06 , H03B1/00 , H03B7/02 , H03B7/06 , H03L7/099 , H03D3/24
CPC分类号： H03B7/02 , H03L7/099 , H03B2201/02 , H03B7/06
摘要： A PLL circuit includes a PLLic formed into an integrated circuit; a loop filter for receiving an output signal from the PLLic; a voltage-controlled oscillator having an oscillation frequency which is controlled according to an output signal of the loop filter for applying a controlled oscillation output signal to the PLLic, the voltage-controlled oscillator including a resonator and a negative resistor circuit; wherein a buffer amplifier functioning as a part of the voltage-controlled oscillator is incorporated into the PLLic, and the resonator and the negative resistor circuit of the voltage-controlled oscillator are disposed outside of the PLLic.
摘要翻译： PLL电路包括形成为集成电路的PLL; 用于接收来自PLL的输出信号的环路滤波器; 压控振荡器，其具有根据所述环路滤波器的输出信号控制的振荡频率，用于向所述PLL提供受控振荡输出信号，所述压控振荡器包括谐振器和负电阻电路; 其中用作压控振荡器的一部分的缓冲放大器被并入到PLL中，并且压控振荡器的谐振器和负电阻电路设置在PLL的外部。

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