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    • 51. 发明授权
    • Broadband radio transceiver with optical transform
    • 带光变换的宽带无线电收发器
    • US08600237B2
    • 2013-12-03
    • US12976099
    • 2010-12-22
    • Evan R. GreenMario J. PanicciaSean M. KoehlRichard JonesGuy S. Anthony
    • Evan R. GreenMario J. PanicciaSean M. KoehlRichard JonesGuy S. Anthony
    • H04B10/00
    • H04B10/2575H04B1/71635H04B1/71637H04B2210/006H04L27/2096H04L27/223H04L27/2601
    • A broadband receiving apparatus includes an antenna to receive a radio signal having a plurality of modulation frequencies. An amplifier drives a laser source from the broadband radio signal to produce an optical signal having a plurality of spectral components. A diffraction grating transforms the optical signal into its spectral components. An array of photo-detectors converts the spectral components into electronic signals corresponding to the plurality of modulation frequencies. A transmitting apparatus includes an array of coherent laser emitters driven by electronic signals corresponding to a plurality of modulation frequencies to produce optical signals corresponding to a plurality of spectral components. A diffraction grating inverse transforms the spectral components into a composite optical signal. A photo-detector converts the composite optical signal into a composite electronic signal including the plurality of modulation frequencies. An amplifier amplifies the composite electronic signal for transmission as a broadband radio signal.
    • 宽带接收装置包括用于接收具有多个调制频率的无线电信号的天线。 放大器从宽带无线电信号驱动激光源以产生具有多个频谱分量的光信号。 衍射光栅将光信号转换成其光谱分量。 光检测器阵列将光谱分量转换成对应于多个调制频率的电子信号。 发送装置包括由对应于多个调制频率的电子信号驱动的相干激光发射器的阵列,以产生对应于多个频谱分量的光信号。 衍射光栅将光谱分量逆变换成复合光信号。 光检测器将复合光信号转换成包括多个调制频率的复合电子信号。 放大器放大复合电子信号作为宽带无线电信号进行传输。
    • 54. 发明授权
    • Digital signal regeneration, reshaping and wavelength conversion using an optical bistable silicon raman laser
    • 使用光学双稳态硅拉曼激光器进行数字信号再生,整形和波长转换
    • US07508576B2
    • 2009-03-24
    • US11040238
    • 2005-01-20
    • Ansheng LiuMario J. Paniccia
    • Ansheng LiuMario J. Paniccia
    • H01S3/00
    • H01S3/30H01S3/063H01S3/0637H01S5/32
    • An optical bistable silicon Raman laser is disclosed, which provides digital signal regeneration, reshaping and wavelength conversion. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. First and second reflectors are disposed in the optical waveguide. The first and second reflectors define a cavity in the optical waveguide. The cavity is to receive a first optical beam having a first wavelength. A power level of the first optical beam received by the cavity rising above a second power level results in emission of a second optical beam of a second wavelength from the cavity until the power level of the first optical beam received by the cavity falls below a first power level. The first power level is less than the second power level.
    • 公开了一种光学双稳态硅拉曼激光器,其提供数字信号再生,整形和波长转换。 根据本发明的方面的装置包括设置在半导体材料中的光波导。 第一和第二反射器设置在光波导中。 第一和第二反射器限定光波导中的空腔。 腔体将接收具有第一波长的第一光束。 由空腔接收的第一光束的功率电平升高到高于第二功率电平,导致从空腔发射第二波长的第二光束,直到由空腔接收的第一光束的功率电平落在第一 能量等级。 第一功率电平小于第二功率电平。
    • 59. 发明授权
    • Method and apparatus for optically modulating light through the back side of an integrated circuit die along the side walls of junctions
    • 用于沿着结的侧壁通过集成电路管芯的背面光学调制光的方法和装置
    • US06480641B1
    • 2002-11-12
    • US09434866
    • 1999-11-04
    • Yi DingMario J. PanicciaTimothy J. Maloney
    • Yi DingMario J. PanicciaTimothy J. Maloney
    • G02B612
    • G02F1/218G02B2006/12107G02B2006/12142G02F2001/0152G02F2201/307
    • An optical modulator that modulates light through the back side of a flip chip packaged integrated circuit die. In one embodiment, an optical modulator includes a p-n junction having a side wall that is substantially vertical or perpendicular relative to a surface of the integrated circuit die. A charged region is generated at the p-n junction and is modulated in response to an electrical signal of the integrated circuit die. An optical beam is directed through the back side, of the semiconductor substrate and through the charged region along the side wall p-n junction. The optical beam is deflected off a deflector back through the charged region along the side wall back out the back side. In one embodiment, the side wall p-n junction is provided with a metal oxide semiconductor (MOS) gate structure. In another embodiment, the side wall p-n junction is provided by an n− (or p−) well in a p− (or n−) epitaxy layer of the semiconductor substrate. In one embodiment, the well is a well ring structure. In another embodiment, there are a plurality of wells periodically located in the epitaxy layer of the semiconductor substrate. In one embodiment, the well or plurality of wells are surrounded with an optical beam confinement structure.
    • 一种光调制器,其通过倒装芯片封装的集成电路管芯的背面调制光。 在一个实施例中,光调制器包括具有相对于集成电路管芯的表面基本垂直或垂直的侧壁的p-n结。 在p-n结处产生带电区域,并且响应于集成电路管芯的电信号进行调制。 光束被引导通过半导体衬底的背面,并沿着侧壁p-n结通过带电区域。 光束从背面向后偏转穿过穿过带电区域的偏转器。 在一个实施例中,侧壁p-n结设置有金属氧化物半导体(MOS)栅极结构。 在另一个实施例中,侧壁p-n结由半导体衬底的p-(或n-)外延层中的n-(或p-)阱提供。 在一个实施例中,井是井环结构。 在另一个实施例中,存在周期性地位于半导体衬底的外延层中的多个阱。 在一个实施例中,阱或多个阱被光束约束结构包围。
    • 60. 发明授权
    • Method and apparatus for switching an optical beam in an integrated circuit die
    • 用于切换集成电路管芯中的光束的方法和装置
    • US06421473B1
    • 2002-07-16
    • US09676297
    • 2000-09-28
    • Mario J. PanicciaYi DingDmitri E. Nikonov
    • Mario J. PanicciaYi DingDmitri E. Nikonov
    • G02B612
    • G02F1/025G02B2006/12145G02F1/313
    • A device for confining an optical beam in an optical switch. In one embodiment, the disclosed optical switch includes an optical switching device disposed between an optical input port and an optical output port in a semiconductor substrate layer of an integrated circuit die. The semiconductor substrate layer is disposed between a plurality of optical confinement layers such that an optical beam is confined to remain within the semiconductor substrate layer until exiting through the optical output port. In one embodiment, a plurality of semiconductor substrate layers are included in the optical switch. Each of the semiconductor substrate layers is disposed between optical confinement layers such that optical beams passing through the semiconductor substrate layers are confined to remain within the semiconductor substrate layers until exiting through respective optical output ports. In one embodiment, at least one optical switching device is disposed in each of the plurality of semiconductor substrate layers. In one embodiment, integrated circuitry such as driver circuitry, controller circuitry, logic circuitry, coder-decoder circuitry, microprocessor circuitry or the like is included in at least one of the semiconductor substrate layers.
    • 用于将光束限制在光开关中的装置。 在一个实施例中,所公开的光开关包括设置在集成电路管芯的半导体衬底层中的光输入端口和光输出端口之间的光开关器件。 半导体衬底层设置在多个光学限制层之间,使得光束被限制为保持在半导体衬底层内,直到通过光学输出端口离开。 在一个实施例中,光开关中包括多个半导体衬底层。 每个半导体衬底层设置在光学限制层之间,使得通过半导体衬底层的光束被限制为保留在半导体衬底层内,直到通过相应的光学输出端口离开。 在一个实施例中,至少一个光学开关器件设置在多个半导体衬底层的每一个中。 在一个实施例中,诸如驱动器电路,控制器电路,逻辑电路,编码器 - 解码器电路,微处理器电路等的集成电路被包括在至少一个半导体衬底层中。