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    • 53. 发明授权
    • Directional waveguide coupler for ABS reflected light
    • ABS反射光的定向波导耦合器
    • US08238202B2
    • 2012-08-07
    • US12928678
    • 2010-12-16
    • Erhard SchreckTobias MaletzkyXuhui JinYuchen ZhouKenichi TakanoJoe Smyth
    • Erhard SchreckTobias MaletzkyXuhui JinYuchen ZhouKenichi TakanoJoe Smyth
    • G11B11/00
    • G11B5/314B82Y20/00G02B6/1226G02B6/125G02B6/2821G11B5/3189G11B2005/001G11B2005/0021
    • A waveguide structure for a TAMR head is disclosed wherein at least one detection waveguide is formed parallel to a main waveguide and located a gap distance therefrom. A light source transmits light into the main waveguide and towards an ABS/medium interface. A plasmon generator converts light from the waveguide into plasmon waves that are directed onto a magnetic medium. Back reflected light is captured by the main waveguide, partially diverted into a detection waveguide, and transmitted to a photo detector that measures light intensity (IB) which correlates closely to the plasmon wave intensity at the ABS/medium interface. A controller linked to the photo detector is employed to calculate IB as a function of ABS/medium spacing in a non-write condition and this relationship can be used to control and maintain a constant plasmon wave intensity at the ABS during a series of TAMR write processes with a plurality of media.
    • 公开了一种用于TAMR头的波导结构,其中至少一个检测波导与主波导平行地形成并且与其间的间隙距离。 光源将光传输到主波导并朝向ABS /介质接口。 等离子体激元发生器将来自波导的光转换成被引导到磁介质上的等离子体波。 后反射光被主波导捕获,部分转移到检测波导中,并传输到光检测器,该光检测器测量与ABS /介质界面处的等离子体波强度密切相关的光强度(IB)。 在非写入条件下,使用与光电检测器相关联的控制器来计算IB作为ABS /介质间隔的函数,并且该关系可用于在一系列TAMR写入期间控制和维持ABS处的恒定等离子体波强度 具有多个媒体的过程。
    • 54. 发明授权
    • Plasmon shield to shape and reduce optical spot
    • 等离子体屏蔽形状并减少光斑
    • US08036069B1
    • 2011-10-11
    • US12802096
    • 2010-05-28
    • Xuhui JinYuchen ZhouJoe SmythTobias MaletzkyKenichi TakanoErhard Schreck
    • Xuhui JinYuchen ZhouJoe SmythTobias MaletzkyKenichi TakanoErhard Schreck
    • G11B11/00
    • G11B5/314G02B6/107G11B2005/0021
    • A TAMR head is disclosed with a triangular shaped plasmon antenna covered on two sides with a plasmon layer that generates an edge plasmon mode along a vertex of the two plasmon sides formed opposite a main pole layer. A plasmon shield (PS) is formed along the ABS and opposite the vertex to confine an electric field from the edge plasmon mode within a small radius of the edge plasmon tip thereby reducing the optical spot size on the magnetic medium and enhancing writability. An end of a waveguide used to direct input electromagnetic radiation to the plasmon antenna adjoins a PS side opposite the ABS. In one embodiment, a magnetic shield may be formed along the ABS and adjoins the PS so that a first PS section terminates at the ABS and faces the vertex while a second PS section is formed between the magnetic shield and waveguide end.
    • 公开了具有三面形等离子体激元的三角形等离子体激元天线,该三角形等离子体激元天线用等离子体膜覆盖,该等离子体膜沿着与主极层相对的两个等离子体激元侧的顶点产生边缘等离子体模式。 等离子体屏蔽(PS)沿着ABS形成并与顶点相对,以将边缘等离子体激元模式的电场限制在边缘等离子体激元尖端的小半径内,从而减小磁介质上的光点尺寸并提高可写性。 用于将输入电磁辐射引导到等离子体激元天线的波导的一端与ABS相对的PS侧相邻。 在一个实施例中,可以沿着ABS形成磁屏蔽并与PS邻接,使得第一PS部分在ABS处终止并面向顶点,而在磁屏蔽和波导端之间形成第二PS部分。
    • 56. 发明授权
    • Support for virtualized unified communications clients when host server connectivity is lost
    • 当主机服务器连接丢失时,支持虚拟化统一通信客户端
    • US08621261B2
    • 2013-12-31
    • US12953706
    • 2010-11-24
    • Randall Bernard BairdJ. Steven MayerJoe Smyth
    • Randall Bernard BairdJ. Steven MayerJoe Smyth
    • G06F11/00
    • G06F11/2012G06F11/1479H04L67/08
    • Techniques are provided for establishing a Virtual Desktop Interface (VDI) connection at a virtual desktop thin client (VDTC) device, between a VDI client in the VDTC device and a VDI server in a hosted virtual desktop server (HVDS). A unified communications (UC) control connection is established between a UC protocol stack on the VDTC device and a primary call agent, where the UC control connection is configured to allow the UC protocol stack to register with the primary call agent, and to send or receive commands from the primary call agent that are based on signals from a UC control application running on the HVDS. A UC control backup application is started on the virtual desktop thin client device in a standby mode that is configured to switch to an active mode in response to a failure to establish or maintain the UC control connection, or a failure to establish or maintain the VDI connection. A user interface is launched on the virtual desktop thin client device that is configured to perform UC backup functions.
    • 提供了在虚拟桌面瘦客户机(VDTC)设备,VDTC设备中的VDI客户端和托管虚拟桌面服务器(HVDS)中的VDI服务器之间建立虚拟桌面接口(VDI)连接的技术。 在VDTC设备上的UC协议栈和主呼叫代理之间建立统一通信(UC)控制连接,其中UC控制连接被配置为允许UC协议栈向主呼叫代理注册,并且发送或 接收来自主呼叫代理的基于来自在HVDS上运行的UC控制应用的信号的命令。 在虚拟桌面瘦客户端设备上启动UC控制备份应用程序,该备用模式被配置为响应于建立或维护UC控制连接的故障而切换到活动模式,或者未能建立或维护VDI 连接。 在配置为执行UC备份功能的虚拟桌面瘦客户端设备上启动用户界面。
    • 58. 发明授权
    • Field tunable spin torque oscillator for RF signal generation
    • 用于RF信号产生的现场可调自旋转矩振荡器
    • US08203389B1
    • 2012-06-19
    • US12928194
    • 2010-12-06
    • Yuchen ZhouKunliang ZhangPokang WangJoe Smyth
    • Yuchen ZhouKunliang ZhangPokang WangJoe Smyth
    • H03L7/26
    • H03B15/006
    • A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
    • 公开了具有包括磁阻层(MRL)/间隔物/磁振荡层(MOL))构造的巨磁阻(GMR)结的自旋转移振荡器(STO)装置,以及包括感测层/结层/参考 层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性,而MOL和感测层的Mst(饱和磁化强度×厚度)值彼此在±50%以内。 当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时,产生具有一定频率的MOL振荡状态。 因此,感测层以类似的RF频率振荡,并且当低密度电流流过MR传感器时,产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。
    • 59. 发明申请
    • FIELD TUNABLE SPIN TORQUE OSCILLATOR FOR RF SIGNAL GENERATION
    • 用于RF信号发生的现场可调旋转扭矩振荡器
    • US20120139649A1
    • 2012-06-07
    • US12928194
    • 2010-12-06
    • Yuchen ZhouKunliang ZhangPokang WangJoe Smyth
    • Yuchen ZhouKunliang ZhangPokang WangJoe Smyth
    • H03B28/00
    • H03B15/006
    • A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
    • 公开了具有包括磁阻层(MRL)/间隔物/磁振荡层(MOL))构造的巨磁阻(GMR)结的自旋转移振荡器(STO)装置,以及包括感测层/结层/参考 层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性,而MOL和感测层的Mst(饱和磁化强度×厚度)值彼此在±50%以内。 当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时,产生具有一定频率的MOL振荡状态。 因此,感测层以类似的RF频率振荡,并且当低密度电流流过MR传感器时,产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。
    • 60. 发明授权
    • Perpendicular magnetic recording write head with milling defined track width
    • 垂直磁记录写头具有铣削定义的轨道宽度
    • US08477453B2
    • 2013-07-02
    • US12799927
    • 2010-05-05
    • Kenichi TakanoYuchen ZhouMin LiJoe Smyth
    • Kenichi TakanoYuchen ZhouMin LiJoe Smyth
    • G11B5/31
    • G11B5/1278G11B5/3116G11B5/314G11B5/315G11B5/3163G11B2005/0024
    • A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.
    • 描述了至少具有前导锥形和微调极尖部分的主极层。 即使对于接近50nm的窄轨道宽度,领先的锥形也增加了头部场>达15000 Oe。 对于MAMR应用,STO和后屏蔽依次形成在尾极端侧。 此外,可以添加全侧屏蔽以减少边缘场。 另一实施例涉及在极尖处包括前导锥形和后锥形两者,其中前锥度角在20°至60°之间,后锥角度为10°至45°。 提供了一种用于形成本发明的各种实施例的方法。 一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。 可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。