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51. 发明申请

US20100073828A1 TMR device with novel free layer 有权
标题翻译： TMR器件具有新颖的自由层
公开(公告)号：US20100073828A1
公开(公告)日：2010-03-25
申请号：US12284454
申请日：2008-09-22
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/33 , G11B5/3929 , G11B2005/3996 , Y10T428/1114
摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
摘要翻译：公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

52. 发明授权

US07672088B2 Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications 有权
标题翻译： Heusler合金与插入层，以降低CPP，TMR，MRAM和其他自旋电子应用的订购温度
公开(公告)号：US07672088B2
公开(公告)日：2010-03-02
申请号：US11472126
申请日：2006-06-21
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
IPC分类号： G11B5/39
CPC分类号： G11B5/3983 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/183 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer ≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.
摘要翻译：公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个另外的FeCo层，以得到由FeCo / [HA / IL] nHA，[HA / IL] nHA / FeCo或FeCo / [HA / IL] nHA / FeCo表示的构型，其中 n是整数≥1，HA是Heusler合金层，IL是插入层。任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。例如，Co2MnSi可以与Al或FeCo靶或Co2MnAl或Co2FeSi靶共溅射。

53. 发明授权

US07646568B2 Ultra thin seed layer for CPP or TMR structure 有权
标题翻译：用于CPP或TMR结构的超薄种子层
公开(公告)号：US07646568B2
公开(公告)日：2010-01-12
申请号：US11317598
申请日：2005-12-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , Y10T29/49021
摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
摘要翻译：已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

54. 发明申请

US20090161266A1 TMR device with surfactant layer on top of cofexby/cofez inner pinned layer 有权
标题翻译：具有表面活性剂层的TMR器件位于cofexby / cofez内部固定层的顶部
公开(公告)号：US20090161266A1
公开(公告)日：2009-06-25
申请号：US12321901
申请日：2009-01-27
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。结果，Hin值可以减少1/3至约32Oe。对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

55. 发明申请

US20090122450A1 TMR device with low magnetostriction free layer 审中-公开
标题翻译：具低磁致伸缩层的TMR器件
公开(公告)号：US20090122450A1
公开(公告)日：2009-05-14
申请号：US11983329
申请日：2007-11-08
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/18 , G11B5/3906 , G11B5/3912 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： A high performance TMR sensor is fabricated by employing a free layer comprised of CoBX with a λ between −5×10−6 and 0 on a MgOX tunnel barrier. Optionally, a FeCo/CoBX free layer configuration may be used where x is about 1 to 30 atomic %. Trilayer configurations represented by FeCo/CoFeB/CoBX, FeCo/CoBX/CoFeB, FeCoY/CoFeW/CoBX, or FeCoY/FeB/CoBX may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be substituted for CoBx in the aforementioned embodiments. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining a low Hc and RA
摘要翻译：通过在MgOX隧道屏障上采用包含-5×10-6和0之间的λ的CoBX自由层来制造高性能TMR传感器。可选地，可以使用Fe约为1〜30原子％的FeCo / CoBX自由层构型。还可以使用由FeCo / CoFeB / CoBX，FeCo / CoBX / CoFeB，FeCoY / CoFeW / CoBX或FeCoY / FeB / CoBX表示的三层结构。或者，在上述实施方式中，可以将CoB与分别与CoNiFe或CoNiFeM（其中M为V，Ti，Zr，Nb，Hf，Ta或Mo）共溅射而形成的CoNiFeB或CoNiFeBM代替CoBx。在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。在双层或三层实施例中，通过组合CoBx（-1）和具有正λ的一个或多个层来实现-5×10 -6和5×10 -6之间的λ。

56. 发明申请

US20080171223A1 TMR device with Hf based seed layer 有权
标题翻译：具有Hf基种子层的TMR器件
公开(公告)号：US20080171223A1
公开(公告)日：2008-07-17
申请号：US11652740
申请日：2007-01-12
申请人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
发明人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
IPC分类号： B32B15/20 , B05D5/12
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3259 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10T428/1291
摘要： A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such as CoFe and Cu may be used as the upper layer. As a result, the overlying layers in a TMR sensor will be smoother and less pin dispersion is observed. The Hex/Hc ratio is increased relative to that for a MTJ having a conventional Ta/Ru seed layer configuration. The trilayer seed configuration is especially effective when an IrMn AFM layer is grown thereon and thereby reduces Hin between the overlying pinned layer and free layer. Ni content in the NiFe or NiFeX middle layer is above 30 atomic % and preferably >80 atomic %.
摘要翻译：公开了一种MTJ结构，其中种子层由下Ta层，中Hf层和上NiFe或NiFeX层制成，其中X是Co，Cr或Cu。可选地，可以使用Zr，Cr，HfZr或HfCr作为中间层，并且可以使用具有FCC结构的诸如CoFe和Cu的材料作为上层。结果，TMR传感器中的上覆层将变得更平滑，并且观察到较少的引脚分散。相对于具有常规Ta / Ru种子层构型的MTJ，Hex / Hc比增加。当IrMn AFM层在其上生长时，三层种子构型特别有效，从而在覆盖的被钉扎层和自由层之间降低了Hin。 NiFe或NiFeX中间层的Ni含量在30原子％以上，优选为80原子％以上。

57. 发明授权

US07333306B2 Magnetoresistive spin valve sensor with tri-layer free layer 有权
标题翻译：具有三层自由层的磁阻自旋阀传感器
公开(公告)号：US07333306B2
公开(公告)日：2008-02-19
申请号：US11209231
申请日：2005-08-23
申请人： Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li
发明人： Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , Y10T29/49028 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046 , Y10T428/1121
摘要： A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.
摘要翻译： TMR传感器，CPP GMR传感器和CCP CPP GMR传感器都包括三层自由层，其形式为CoFe / CoFeB / NiFe，其中Fe的原子百分比可以在5％和90％之间变化，原子 B的百分比可以在5％和30％之间变化。这些传感器还包括SyAP钉扎层，其在GMR传感器的情况下包括层压在Cu薄层上的至少一层CoFe。在CCPCPP传感器中，在间隔层和自由层之间形成一层含氧化铝的偏析铜颗粒。所有这三种结构表现出非常好的矫顽力，面电阻，GMR比和磁致伸缩的值。

58. 发明授权

US08202572B2 TMR device with improved MgO barrier 有权
标题翻译：具有改善的MgO屏障的TMR器件
公开(公告)号：US08202572B2
公开(公告)日：2012-06-19
申请号：US12927698
申请日：2010-11-22
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： H01L21/00
CPC分类号： H01F41/307 , B82Y40/00 , G11C11/161 , H01L43/12
摘要： A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.
摘要翻译：公开了一种形成高性能磁隧道结（MTJ）的方法，其中隧道势垒包括至少三个金属氧化物层。通过沉积第一金属层，执行自然氧化（NOX）工艺，沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化，并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。在替代实施例中，在最上层金属层被沉积之前，在MOX1层上形成多个金属氧化物层。所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA，并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

59. 发明申请

US20120038012A1 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US20120038012A1
公开(公告)日：2012-02-16
申请号：US13317485
申请日：2011-10-19
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： H01L29/82
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1+10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1 + 10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。

60. 发明申请

US20110318608A1 TMR device with novel pinned layer 审中-公开
标题翻译： TMR器件具有新颖的钉扎层
公开(公告)号：US20110318608A1
公开(公告)日：2011-12-29
申请号：US12803545
申请日：2010-06-29
申请人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
发明人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
IPC分类号： G11B5/39 , B05D5/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： The invention discloses how the insertion of a layer of CoFeB serves to increase the robustness of an MTF device by smoothing the interface between the tunnel barrier and the pinned layer.
摘要翻译：本发明公开了如何通过平滑隧道势垒和被钉扎层之间的界面来增加CoFeB层的插入来增加MTF装置的鲁棒性。

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