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51. 发明申请

US20090047627A1 Partial denture 有权
标题翻译：部分义齿
公开(公告)号：US20090047627A1
公开(公告)日：2009-02-19
申请号：US11921679
申请日：2005-06-09
申请人： Hideo Nakagawa
发明人： Hideo Nakagawa
IPC分类号： A61C13/225
CPC分类号： A61C13/267 , A61C13/01
摘要： A partial denture of a novel type excellent in feelings in use and easy to manufacture is provided. The partial denture has an artificial tooth 1, a denture base 11 holding the artificial tooth, and a clasp 25 fixed to the denture base, wherein the clasp includes a back-side arm 4b and a front-side arm 4a and does not include a rest, the back-side arm extending in a rearward bulging convex on a back side of a dentition-extended range of the denture base 11, the front-side arm extending in a forward bulging convex toward a front side of the dentition-extended range of the denture base to make a pair with the back-side arm, and wherein the back-side arm and the front-side arm extend within a height range S0 ranging from an extended plane of a top surface 1a of a crown of the artificial tooth toward the denture base side.
摘要翻译：提供了一种在使用上感觉良好且易于制造的新颖型的部分假牙。局部义齿具有人造牙齿1，保持人造牙齿的假牙基座11和固定在义齿基座上的扣环25，其中，所述扣具包括后侧臂4b和前侧臂4a，并且不包括休息，后侧臂在义齿基座11的牙列延伸范围的背侧上向后凸起延伸，前侧臂朝向牙列延伸范围的前侧朝向凸出的凸起延伸所述假牙基座与所述背侧臂成对配置，并且其中所述后侧臂和所述前侧臂在从人造牙冠顶面1a的延伸平面延伸的高度范围S0的范围内延伸齿向义齿基部侧。

52. 发明申请

US20080248328A1 Process for Preparing a Zeolite-Containing Film 审中-公开
标题翻译：制备含沸石膜的方法
公开(公告)号：US20080248328A1
公开(公告)日：2008-10-09
申请号：US12060480
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa
IPC分类号： B32B9/00 , B05D3/02 , B05D5/12
CPC分类号： H01L21/31695 , C01B33/141 , C01B33/145 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337
摘要： The invention provides a preparation process of a zeolite-containing film which can raise a zeolite component therein, control the physical properties of the surface, and provide a highly smooth film. The process for preparing a zeolite-containing film has a step of forming a precursor film containing an amorphous silicon oxide portion and a zeolite-like recurring portion by using a material having an amorphous silicon oxide portion and a material having a zeolite-like recurring portion; and a dry gel conversion step of heating the precursor film in the presence of water vapor in order to grow the zeolite-like recurring portion. In this process, the material having an amorphous silicon oxide portion and/or the material having a zeolite-like recurring portion contain(s) a silicon atom bonded to the carbon atom of an organic group containing at least one carbon group.
摘要翻译：本发明提供了一种含沸石的膜的制备方法，其可以在其中提高沸石组分，控制表面的物理性能，并提供高度光滑的膜。制备含沸石的膜的方法具有通过使用具有非晶氧化硅部分的材料和具有沸石状重复部分的材料形成含有非晶氧化硅部分和沸石状重复部分的前体膜的步骤 ; 以及干燥凝胶转化步骤，在水蒸气存在下加热前体膜，以生长沸石状重复部分。在该方法中，具有无定形氧化硅部分的材料和/或具有沸石状重复部分的材料含有与含有至少一个碳原子的有机基团的碳原子键合的硅原子。

53. 发明授权

US07402621B2 Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device 有权
标题翻译：多孔膜形成组合物，组合物的制备方法，多孔膜和半导体器件
公开(公告)号：US07402621B2
公开(公告)日：2008-07-22
申请号：US11041780
申请日：2005-01-24
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
IPC分类号： C08G77/06
CPC分类号： H01L21/02126 , C08G77/06 , C08G77/08 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.
摘要翻译：本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并加入交联性抑制剂以暂时终止交联性; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。

54. 发明授权

US07309722B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07309722B2
公开(公告)日：2007-12-18
申请号：US10703374
申请日：2003-11-07
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： C09D183/04 , C08K3/22
CPC分类号： H01L23/5222 , C08K3/34 , C08L83/02 , C09D183/04 , H01L23/53228 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/249953 , Y10T428/31663 , H01L2924/00
摘要： The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4−n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.
摘要翻译：本发明提供一种成膜用组合物，其可以形成介电性，粘合性，膜稠度和机械强度优异且容易变薄的多孔膜; 多孔膜及其形成方法，以及内部含有多孔膜的高性能和高可靠性的半导体器件。更具体地，用于形成多孔膜的组合物包括含有无定形聚合物的溶液，其通过水解和缩合由通式（R 1）2表示的至少一种硅烷化合物而获得，（OR 2）4-n N，以及通过使用氢氧化季铵形成的沸石溶胶。形成多孔膜的方法包括用于涂覆用于形成多孔膜的组合物的涂布步骤; 随后的干燥步骤; 和多孔性形成步骤。

55. 发明申请

US20070202666A1 Method for fabricating semiconductor device 审中-公开
公开(公告)号：US20070202666A1
公开(公告)日：2007-08-30
申请号：US11783131
申请日：2007-04-06
申请人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
IPC分类号： H01L21/36
CPC分类号： H01L21/76819 , H01L21/31051
摘要： After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

56. 发明申请

US20070187359A1 Dry etching method, fine structure formation method, mold and mold fabrication method 失效
标题翻译：干蚀刻法，精细结构形成法，模具和模具制造方法
公开(公告)号：US20070187359A1
公开(公告)日：2007-08-16
申请号：US11475173
申请日：2006-06-27
申请人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
发明人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
IPC分类号： C23F1/00
CPC分类号： C23F4/00 , G02B6/136
摘要： A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom and a gas including a CN bond and a hydrogen atom.
摘要翻译：通过使用等离子体蚀刻包括钨和碳的物质。等离子体由包含氟原子的气体和包含CN键和氢原子的气体的混合气体产生。

57. 发明授权

US07233052B2 Semiconductor device including fine dummy patterns 有权
标题翻译：半导体器件包括精细虚拟图案
公开(公告)号：US07233052B2
公开(公告)日：2007-06-19
申请号：US11082853
申请日：2005-03-18
申请人： Eiji Tamaoka , Hideo Nakagawa
发明人： Eiji Tamaoka , Hideo Nakagawa
IPC分类号： H01L29/00 , H01L23/48
CPC分类号： H01L21/76897 , H01L21/31053 , H01L21/76819 , H01L21/7682 , H01L23/522 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of this invention includes a first interconnect pattern formed on a semiconductor substrate and a second interconnect pattern formed above the first interconnect pattern with an interlayer insulating film sandwiched therebetween. The first interconnect pattern includes a dummy pattern insulated from the first interconnect pattern, and the dummy pattern includes a plurality of fine patterns adjacent to each other and air gaps formed between the adjacent fine patterns.
摘要翻译：本发明的半导体器件包括形成在半导体衬底上的第一互连图案和形成在第一布线图案之上的第二布线图案，夹在其间的层间绝缘膜。第一互连图案包括与第一互连图案绝缘的虚设图案，并且虚设图案包括彼此相邻的多个精细图案和形成在相邻精细图案之间的气隙。

58. 发明授权

US07205338B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 失效
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07205338B2
公开(公告)日：2007-04-17
申请号：US10796170
申请日：2004-03-09
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： C08G77/50 , C08L83/14 , C01B33/113
CPC分类号： C08G77/50 , C08J5/18 , C08J2383/04 , C09D183/14 , Y10T428/31663
摘要： Provided is a coating liquid for forming a porous film having desirably controlled thickness and having excellent dielectric and mechanical properties, using the conventional semiconductor process. Specifically, provided is a composition for forming a porous film comprising a condensation product and an organic solvent wherein the condensation product is obtained by hydrolysis and condensation, at presence of a basic catalyst, ofone or more silane compounds represented by formula (1): R1kSi(OR2)4-k,and one or more crosslinking agents represented by formula (2): {Xj(Y)3-jSi-(L)m-}nMZ4-n.Moreover, a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and heating the dried film so as to hardent the film, and others are provided.
摘要翻译：提供一种用于形成具有期望的控制厚度并且具有优异的介电和机械性能的多孔膜的涂布液，使用常规的半导体工艺。具体地，提供了一种用于形成多孔膜的组合物，其包含缩合产物和有机溶剂，其中缩合产物通过水解和缩合在碱性催化剂存在下获得

59. 发明申请

US20050221599A1 Etching method, semiconductor and fabricating method for the same 有权
标题翻译：蚀刻方法，半导体及其制造方法相同
公开(公告)号：US20050221599A1
公开(公告)日：2005-10-06
申请号：US11131180
申请日：2005-05-18
申请人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
发明人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/312 , H01L21/4763 , H01L21/768 , H01L23/522
CPC分类号： H01L21/31053 , H01L21/31116 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76804 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
摘要翻译：由Si x Si x O z（x> 0，y> = 0，z> 0）表示的有机/无机混合膜是用含氟，碳和氮的蚀刻气体进行等离子体蚀刻。在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。重整表面部分用含氟和碳的蚀刻气体进行等离子体蚀刻。

60. 发明授权

US06930393B2 Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device 失效
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US06930393B2
公开(公告)日：2005-08-16
申请号：US10807494
申请日：2004-03-23
申请人： Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： C08K5/5415 , C08L83/04 , C09D5/25 , C09D183/02 , C09D183/04 , C09D183/06 , C09D183/14 , H01L21/312 , H01L21/316 , H01L23/522 , H01L23/532 , H01L21/04
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3124 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The object of the invention is to provide a porous film having the dielectric constant of 2.2 or less and having practicable mechanical strength. This invention provides a porous film-forming composition comprising (A) and (B): (A) 100 parts by weight of a hydrolyzable silicon compound and/or a product resulting from hydrolysis condensation of silicon compound expressed by following formula (1): R1aSiZ14-a (1) wherein Z1 denotes a hydrolyzable group; R1 denotes a substituted or non-substituted monovalent hydrocarbon group; and a denotes an integer of 0 to 3; and (B) 0.1 to 20 parts by weight of a cross-linking agent comprising at least one cyclic oligomer which can generate silanol group(s) by heating and which is expressed by following formula (3): {R31(H)SiO}d{R32(Z3)SiO}e (3) wherein R31 and R32 each denotes a substituted or non-substituted monovalent hydrocarbon group; Z3 denotes a group which can generate silanol by heating; and each d and e denotes an integer of 0 to 10, and a sum of d and e is greater than or equal to three.
摘要翻译：本发明的目的是提供介电常数为2.2以下且具有可行的机械强度的多孔膜。本发明提供一种多孔成膜组合物，其包含（A）和（B）：（A）100重量份水解性硅化合物和/或由下式（1）表示的硅化合物的水解缩合得到的产物： <？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1＆lt; 1＆lt; 1＆lt; > 4-a <1> <？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z 1表示可水解基团; R 1表示取代或未取代的一价烃基; a表示0〜3的整数，和（B）0.1至20重量份的包含至少一种可通过加热产生硅烷醇基的环状低聚物并由下式（3）表示的交联剂：<β在线式描述=“在线公式”end =“lead”？> {R 30]（H）SiO} D（32）（Z （3）<？in-line-formula description =“In-line formula”end =“tail”？>其中R 31 R 32和R 32各自表示取代或未取代的一价烃基; Z 3表示可以通过加热生成硅烷醇的基团; d和e表示0〜10的整数，d与e的和大于等于3。

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