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51. 发明授权

US09018699B2 Silicon carbide semiconductor element and method for fabricating the same 有权
标题翻译：碳化硅半导体元件及其制造方法
公开(公告)号：US09018699B2
公开(公告)日：2015-04-28
申请号：US13814433
申请日：2012-09-12
申请人： Tsutomu Kiyosawa , Kazuyuki Sawada , Kunimasa Takahashi , Yuki Tomita
发明人： Tsutomu Kiyosawa , Kazuyuki Sawada , Kunimasa Takahashi , Yuki Tomita
IPC分类号： H01L29/66 , H01L21/02 , H01L29/16 , H01L21/04 , H01L29/78 , H01L29/812 , H01L29/872
CPC分类号： H01L21/02378 , H01L21/0475 , H01L21/049 , H01L29/1608 , H01L29/66068 , H01L29/7827 , H01L29/8128 , H01L29/872
摘要： A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a trench arranged in the SiC layer and having a bottom, a sidewall, and an upper corner region located between the sidewall and the upper surface of the SiC layer; a gate insulating film arranged on at least a part of the sidewall and on at least a part of the upper corner region of the trench and on at least a part of the upper surface of the SiC layer; and a gate electrode arranged on the gate insulating film. The upper corner region has a different surface from the upper surface of the SiC layer and from a surface that defines the sidewall. The gate electrode contacts with both of a first portion of the gate insulating film located on the upper corner region and a second portion of the gate insulating film located on the sidewall. The first portion of the gate insulating film is thicker than a third portion of the gate insulating film located on the upper surface of the SiC layer. And an end portion of the gate electrode is located on the upper corner region.
摘要翻译： SiC半导体元件包括：具有相对于（0001）Si平面倾斜的主表面的SiC衬底; 设置在所述基板的主表面上的SiC层; 布置在所述SiC层中并且具有位于所述SiC层的侧壁和所述上表面之间的底部，侧壁和上角区域的沟槽; 栅极绝缘膜，布置在所述沟槽的所述侧壁的至少一部分和所述上部拐角区域的至少一部分上以及所述SiC层的上表面的至少一部分上; 以及设置在栅极绝缘膜上的栅电极。上角区域具有与SiC层的上表面和限定侧壁的表面不同的表面。栅电极与位于上角区域的栅极绝缘膜的第一部分和位于侧壁上的栅极绝缘膜的第二部分接触。栅极绝缘膜的第一部分比位于SiC层的上表面上的栅极绝缘膜的第三部分厚。并且栅电极的端部位于上角区域。

52. 发明授权

US08476733B2 Semiconductor element and manufacturing method therefor 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US08476733B2
公开(公告)日：2013-07-02
申请号：US13142659
申请日：2010-11-15
申请人： Kunimasa Takahashi , Chiaki Kudou
发明人： Kunimasa Takahashi , Chiaki Kudou
IPC分类号： H01L27/092
CPC分类号： H01L29/0847 , H01L29/0696 , H01L29/1608 , H01L29/41725 , H01L29/41741 , H01L29/45 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device 100 includes: a body region 105 of a first conductivity type placed on a principal surface of a substrate 101; a silicon carbide layer 102 including a drift region 107 of a second conductivity type; a channel layer 115 of the second conductivity type formed by silicon carbide and placed on the body region 105 and the drift region 107 on a surface of the silicon carbide layer 102; a gate insulating film 111 placed on the channel layer 115; a gate electrode 113 insulated from the silicon carbide layer 102 by the gate insulating film 111; a source electrode 116 provided on the silicon carbide layer 102; and a drain electrode 114 provided on a reverse surface of the substrate 101, wherein the source electrode 116 is in contact with the body region 105 and the channel layer 115; and a second conductivity type impurity concentration on a surface of the silicon carbide layer 102 that is in contact with the source electrode 116 is less than or equal to a second conductivity type impurity concentration of the channel layer 115. Thus, it is possible to provide a silicon carbide semiconductor device having a low loss and a desirable switching characteristic.
摘要翻译：半导体器件100包括：放置在基板101的主表面上的第一导电类型的主体区域105; 包括第二导电类型的漂移区域107的碳化硅层102; 由碳化硅形成并放置在碳化硅层102的表面上的体区105和漂移区107上的第二导电类型的沟道层115; 放置在沟道层115上的栅极绝缘膜111; 通过栅极绝缘膜111与碳化硅层102绝缘的栅电极113; 设置在碳化硅层102上的源电极116; 以及设置在基板101的背面上的漏电极114，其中源电极116与主体区域105和沟道层115接触; 并且与源极116接触的碳化硅层102的表面上的第二导电型杂质浓度小于或等于沟道层115的第二导电类型杂质浓度。因此，可以提供具有低损耗和期望的开关特性的碳化硅半导体器件。

53. 发明授权

US4528087A Process for producing mesophase pitch 失效
标题翻译：生产中间相沥青的方法
公开(公告)号：US4528087A
公开(公告)日：1985-07-09
申请号：US473337
申请日：1983-03-08
申请人： Haruo Shibatani , Kunimasa Takahashi , Takashi Kameda
发明人： Haruo Shibatani , Kunimasa Takahashi , Takashi Kameda
IPC分类号： C10C3/00 , D01F9/145
CPC分类号： D01F9/145 , C10C3/002
摘要： Mesophase pitch containing quinoline soluble mesophase is produced from a pitch having a specific aromatic hydrogen content with a short heat treatment time without conducting any special treatment such as extraction.
摘要翻译：含有喹啉可溶性中间相的中间相沥青由具有特定芳香族氢含量的沥青以短的热处理时间生产，而不进行任何特殊处理如萃取。

54. 发明授权

US4239928A Process for preparing alkyl-substituted aromatic compounds 失效
标题翻译：制备烷基取代芳族化合物的方法
公开(公告)号：US4239928A
公开(公告)日：1980-12-16
申请号：US11949
申请日：1979-02-13
申请人： Kunimasa Takahashi , Takashi Yokoi
发明人： Kunimasa Takahashi , Takashi Yokoi
IPC分类号： C07C5/333 , B01J23/00 , C07C1/00 , C07C5/367 , C07C15/02 , C07C15/073 , C07C67/00 , C07C5/36
CPC分类号： C07C5/367
摘要： A process for preparing corresponding alkyl-substituted aromatic compounds by the gas phase catalytic dehydrogenation of vinylcycloalkenes in the presence of a dehydrogenation catalyst supported on a carrier, said catalytic dehydrogenation being carried out(i) in the presence of a dehydrogenation catalyst in which at least one of elements belonging to periods 5 and 6 in the group VIII of the periodic table selected from the group consisting of palladium, rhodium, platinum, iridium and ruthenium is supported on active carbon(ii) by introducing steam into the reaction system,(iii) but without introducing hydrogen into the reaction system,(iv) at conditions of temperatures ranging from 300.degree. C. to less than 350.degree. C. and pressure less than 2.5 atm (absolute pressure),wherein a liquid hourly space velocity (LHSV) is set at about 5 hr.sup.-1 or less when the catalytic dehydrogenation is effected in the presence of said catalyst in which palladium alone is supported on active carbon.
摘要翻译：一种在负载在载体上的脱氢催化剂存在下通过乙烯基环烯烃的气相催化脱氢制备相应的烷基取代芳族化合物的方法，所述催化脱氢是在脱氢催化剂存在下进行的，其中至少选自钯，铑，铂，铱和钌的元素周期表第Ⅷ族元素中的一种元素通过将蒸汽引入反应体系而负载在活性炭（ⅱ）上，（iii ），但不将氢气引入反应体系中，（iv）在温度范围为300℃至小于350℃，压力小于2.5atm（绝对压力）的条件下，其中液时空速（LHSV）当催化脱氢在催化剂存在下，其中单独钯负载在活性炭上时，设定为约5hr-1或更低。

55. 发明申请

US20130168701A1 SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：硅碳化硅半导体元件及其制造方法
公开(公告)号：US20130168701A1
公开(公告)日：2013-07-04
申请号：US13814433
申请日：2012-09-12
申请人： Tsutomu Kiyosawa , Kazuyuki Sawada , Kunimasa Takahashi , Yuki Tomita
发明人： Tsutomu Kiyosawa , Kazuyuki Sawada , Kunimasa Takahashi , Yuki Tomita
IPC分类号： H01L21/02 , H01L29/16
CPC分类号： H01L21/02378 , H01L21/0475 , H01L21/049 , H01L29/1608 , H01L29/66068 , H01L29/7827 , H01L29/8128 , H01L29/872
摘要： A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a trench arranged in the SiC layer and having a bottom, a sidewall, and an upper corner region located between the sidewall and the upper surface of the SiC layer; a gate insulating film arranged on at least a part of the sidewall and on at least a part of the upper corner region of the trench and on at least a part of the upper surface of the SiC layer; and a gate electrode arranged on the gate insulating film. The upper corner region has a different surface from the upper surface of the SiC layer and from a surface that defines the sidewall. The gate electrode contacts with both of a first portion of the gate insulating film located on the upper corner region and a second portion of the gate insulating film located on the sidewall. The first portion of the gate insulating film is thicker than a third portion of the gate insulating film located on the upper surface of the SiC layer. And an end portion of the gate electrode is located on the upper corner region.
摘要翻译： SiC半导体元件包括：具有相对于（0001）Si平面倾斜的主表面的SiC衬底; 设置在所述基板的主表面上的SiC层; 布置在所述SiC层中并且具有位于所述SiC层的侧壁和所述上表面之间的底部，侧壁和上角区域的沟槽; 栅极绝缘膜，布置在所述沟槽的所述侧壁的至少一部分和所述上部拐角区域的至少一部分上以及所述SiC层的上表面的至少一部分上; 以及设置在栅极绝缘膜上的栅电极。上角区域具有与SiC层的上表面和限定侧壁的表面不同的表面。栅电极与位于上角区域的栅极绝缘膜的第一部分和位于侧壁上的栅极绝缘膜的第二部分接触。栅极绝缘膜的第一部分比位于SiC层的上表面上的栅极绝缘膜的第三部分厚。并且栅电极的端部位于上角区域。

56. 发明申请

US20120018740A1 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20120018740A1
公开(公告)日：2012-01-26
申请号：US13142659
申请日：2010-11-15
申请人： Kunimasa Takahashi , Chiaki Kudou
发明人： Kunimasa Takahashi , Chiaki Kudou
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0847 , H01L29/0696 , H01L29/1608 , H01L29/41725 , H01L29/41741 , H01L29/45 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device 100 includes: a body region 105 of a first conductivity type placed on a principal surface of a substrate 101; a silicon carbide layer 102 including a drift region 107 of a second conductivity type; a channel layer 115 of the second conductivity type formed by silicon carbide and placed on the body region 105 and the drift region 107 on a surface of the silicon carbide layer 102; a gate insulating film 111 placed on the channel layer 115; a gate electrode 113 insulated from the silicon carbide layer 102 by the gate insulating film 111; a source electrode 116 provided on the silicon carbide layer 102; and a drain electrode 114 provided on a reverse surface of the substrate 101, wherein the source electrode 116 is in contact with the body region 105 and the channel layer 115; and a second conductivity type impurity concentration on a surface of the silicon carbide layer 102 that is in contact with the source electrode 116 is less than or equal to a second conductivity type impurity concentration of the channel layer 115. Thus, it is possible to provide a silicon carbide semiconductor device having a low loss and a desirable switching characteristic.
摘要翻译：半导体器件100包括：放置在基板101的主表面上的第一导电类型的主体区域105; 包括第二导电类型的漂移区域107的碳化硅层102; 由碳化硅形成并放置在碳化硅层102的表面上的体区105和漂移区107上的第二导电类型的沟道层115; 放置在沟道层115上的栅极绝缘膜111; 通过栅极绝缘膜111与碳化硅层102绝缘的栅电极113; 设置在碳化硅层102上的源电极116; 以及设置在基板101的背面上的漏电极114，其中源电极116与主体区域105和沟道层115接触; 并且与源极116接触的碳化硅层102的表面上的第二导电型杂质浓度小于或等于沟道层115的第二导电类型杂质浓度。因此，可以提供具有低损耗和期望的开关特性的碳化硅半导体器件。

57. 发明授权

US4985184A Production of carbonaceous powders and their granulation 失效
标题翻译：生产碳质粉末及其造粒
公开(公告)号：US4985184A
公开(公告)日：1991-01-15
申请号：US246272
申请日：1988-09-19
申请人： Kunimasa Takahashi , Takashi Kameda , Masato Yoshikawa , Teruo Teranishi
发明人： Kunimasa Takahashi , Takashi Kameda , Masato Yoshikawa , Teruo Teranishi
IPC分类号： C04B35/528 , C04B35/532
CPC分类号： C04B35/532 , C04B35/528
摘要： Manufacture of granulated self-sintering carbonaceous pulverulent body suitable for precise complicated molding in high speed productivity is conducted in the presence of a wetting agent and a binding agent in the water-pulverulent mixture by using spray drying machine in the atmosphere of the hot air kept at a temperature up to 200.degree. C. optionally in admixture with superheated steam kept at a temperature up to 200.degree. C.

58. 发明授权

US4929404A Graphitic or carbonaceous moldings and processes for producing the same 失效
标题翻译：石墨或碳质成型品及其制造方法
公开(公告)号：US4929404A
公开(公告)日：1990-05-29
申请号：US196760
申请日：1988-05-17
申请人： Kunimasa Takahashi , Takashi Kameda , Haruo Shibatani
发明人： Kunimasa Takahashi , Takashi Kameda , Haruo Shibatani
IPC分类号： C10C3/00 , C25B11/12 , H01M8/02
CPC分类号： C25B11/12 , C10C3/00 , H01M8/0213 , Y10S264/20
摘要： A graphitic or carbonaceous molding comprising graphite powder and a mesophase-containing pitch is obtained by suspending graphite powder in a tar, heating the suspension while blowing an inert gas therein to form the mesophase-containing pitch on the graphite particles to obtain carbonaceous precursors and molding/carbonizing or graphitizing the carbonaceous precursors.
摘要翻译：通过将石墨粉末悬浮在焦油中，加热悬浮液同时在其中吹入惰性气体以在石墨颗粒上形成含中间相沥青以获得碳质前体和模制物，得到包含石墨粉末和含中间相沥青的石墨或碳质模塑料碳化前体碳化或石墨化。

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