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51. 发明授权

US5556970A Lanolin fatty acids, a method for their fractionation, cosmetics and drugs for external use 失效
$Lanolin fatty acids, a method for their fractionation, cosmetics and drugs for external use$
标题翻译：羊毛脂脂肪酸，其分馏方法，化妆品和外用药物
公开(公告)号：US5556970A
公开(公告)日：1996-09-17
申请号：US167825
申请日：1993-12-22
申请人： Toshiyuki Kawasaki , Isao Kato , Kenji Noda , Masakatsu Osaki , Katsuhiko Miyazaki , Hidekazu Nayeshiro , Hideya Ando
发明人： Toshiyuki Kawasaki , Isao Kato , Kenji Noda , Masakatsu Osaki , Katsuhiko Miyazaki , Hidekazu Nayeshiro , Hideya Ando
IPC分类号： A61K8/30 , A61K8/00 , A61K8/36 , A61K8/365 , A61K8/92 , A61K31/20 , A61K31/23 , A61P17/00 , A61Q1/00 , A61Q1/02 , A61Q1/04 , A61Q1/06 , A61Q1/10 , A61Q1/12 , A61Q1/14 , A61Q5/00 , A61Q5/02 , A61Q5/12 , A61Q7/00 , A61Q19/00 , C07C53/126 , C07C59/01 , C11B11/00 , C11C1/00 , C11C1/10 , C11C3/00
CPC分类号： C11C3/00 , A61K8/361 , A61K8/925 , A61Q19/00 , A61Q5/02 , A61Q5/12 , C07C53/126 , C07C59/01 , C11B11/005 , C11C1/005 , C11C1/103
摘要： The invention provides a process comprising treating a lanolin fatty acid with boric acid to convert hydroxy fatty acids therein to boric acid esters, subjecting the reaction mixture to vacuum distillation to fractionate the boric acid esters of hydroxy fatty acids from non-hydroxy fatty acids, hydrolyzing the boric acid esters, and subjecting the hydrolysate to vacuum distillation to provide .alpha.-hydroxy fatty acids and .omega.-hydroxy fatty acids, the resultant respective lanolin fatty acids and esters, and cosmetic products and drug products for external use containing them.According to the invention, pale-colored, substantially odor-free lanolin fatty acids can be obtained easily and with high efficiency and these compounds can be effectively utilized in the pharmaceutical and cosmetic field.
摘要翻译： PCT No.PCT / JP93 / 00540 Sec。 371日期：1993年12月22日 102（e）日期1993年12月22日PCT提交1993年4月26日PCT公布。出版物WO93 / 22410 日本公开1993年11月11日本发明提供了一种方法，其包括用硼酸处理羊毛脂脂肪酸以将其中的羟基脂肪酸转化为硼酸酯，使反应混合物进行真空蒸馏，以将非羟基脂肪酸的硼酸酯从非 - 羟基脂肪酸，水解硼酸酯，并使水解产物进行真空蒸馏以提供α-羟基脂肪酸和ω-羟基脂肪酸，所得到的相应的羊毛脂脂肪酸和酯，以及用于外部使用的化妆品和药物产品他们。根据本发明，可以容易且高效率地获得淡色，基本上无气味的羊毛脂脂肪酸，并且这些化合物可以有效地用于制药和美容领域。

52. 发明授权

US07981072B2 Method and apparatus for supplying predetermined gas into body cavities of a patient 有权
标题翻译：用于将预定气体供应到患者的体腔中的方法和装置
公开(公告)号：US07981072B2
公开(公告)日：2011-07-19
申请号：US12650861
申请日：2009-12-31
申请人： Takefumi Uesugi , Masashi Umemura , Daisuke Sano , Kenji Noda , Atsuhiko Kasahi
发明人： Takefumi Uesugi , Masashi Umemura , Daisuke Sano , Kenji Noda , Atsuhiko Kasahi
IPC分类号： A61M37/00
CPC分类号： A61M13/003 , A61B17/3474 , A61M31/00
摘要： A gas supply apparatus measures a first pressure inside a first body cavity of a patient and a second pressure inside a second body cavity of the patient. The gas supply apparatus regulates a pressure of a predetermined gas based on the measured first and second pressures inside the first and second body cavities.
摘要翻译：气体供应装置测量患者的第一体腔内的第一压力和患者的第二体腔内的第二压力。气体供给装置基于第一和第二体腔内测量的第一和第二压力来调节预定气体的压力。

53. 发明授权

US07938779B2 Treating apparatus and treating device for treating living-body tissue 有权
标题翻译：用于治疗生物体组织的处理装置和处理装置
公开(公告)号：US07938779B2
公开(公告)日：2011-05-10
申请号：US11011899
申请日：2004-12-14
申请人： Tomohisa Sakurai , Koji Iida , Hiroyuki Takahashi , Eiji Murakami , Akihisa Ogawa , Kenji Noda , Seiichi Hosoda , Takeaki Nakamura
发明人： Tomohisa Sakurai , Koji Iida , Hiroyuki Takahashi , Eiji Murakami , Akihisa Ogawa , Kenji Noda , Seiichi Hosoda , Takeaki Nakamura
IPC分类号： A61B8/00
CPC分类号： A61B18/08 , A61B17/320068 , A61B18/085 , A61B18/1442 , A61B2017/00084 , A61B2017/2945 , A61B2018/00589 , A61B2018/00702 , A61B2018/00791 , A61B2018/1432
摘要： In a treating apparatus, a forceps body as a treating device is connected to a generator as a control device. The forceps body mainly includes a pair of handle portions, which are used for manipulation by being held by an operator, a pair of jaws provided between the handle portion and the pair of jaws, which are used to coagulate/resect by grasping living-body tissue to be treated and a pair of scissors component members. A heating member, which is a heat generating source as a heat generating portion for applying heat energy to living-body tissue, is embedded at least one of the jaws. A pair of electrode portions, which is a treating energy generator, is provided to the pair of jaws. By supplying bipolar electric surgical knife current between the pair of electrode portions, high frequency current as treating energy is applied to the grasped living-body tissue.
摘要翻译：在处理装置中，作为处理装置的镊子体与作为控制装置的发生器连接。镊子主体包括一对手柄部分，用于通过操作者握持操作，一对钳口设置在手柄部分和一对钳口之间，用于通过抓住活体来凝固/切除待处理的组织和一对剪刀组件。作为用于向生物体组织施加热能的发热部的发热源的加热部件嵌入至少一个夹爪。作为处理能量发生器的一对电极部分被提供给该对钳口。通过在一对电极部之间提供双极电刀手术电流，作为处理能量的高频电流被施加到被抓住的活体组织。

54. 发明授权

US07838185B2 Focus measurement method and method of manufacturing a semiconductor device 有权
标题翻译：聚焦测量方法和制造半导体器件的方法
公开(公告)号：US07838185B2
公开(公告)日：2010-11-23
申请号：US12358656
申请日：2009-01-23
申请人： Rimiko Ide , Kenji Noda , Hirofumi Fukumoto , Kenichi Asahi , Naohiko Ujimaru
发明人： Rimiko Ide , Kenji Noda , Hirofumi Fukumoto , Kenichi Asahi , Naohiko Ujimaru
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/70641 , Y10S430/143
摘要： In a focus measurement method and a method of manufacturing a semiconductor device relating to the present invention, a focus value is obtained by using a fluctuation where shrinkage of a resist pattern by an electron beam irradiation depends upon the focus value. In the case of obtaining the focus value, the shrinkage of the resist pattern for a focus measurement formed by exposure to be subject for a focus value measurement is measured. The focus value corresponding to the shrinkage is obtained from the pre-obtained focal dependency of the shrinkage. A focal shift length can be defined from a difference between the focus value and a predetermined best focus value.
摘要翻译：在本发明的半导体器件的焦点测量方法和制造方法中，通过使用通过电子束照射的抗蚀剂图案的收缩取决于聚焦值的波动来获得聚焦值。在获得焦点值的情况下，测量由用于聚焦值测量的曝光所形成的聚焦测量的抗蚀图案的收缩。从收缩的预先获得的焦点依赖性获得与收缩相对应的聚焦值。聚焦位移长度可以根据聚焦值和预定的最佳聚焦值之间的差定义。

55. 发明申请

US20090310428A1 MIS-TRANSISTOR-BASED NONVOLATILE MEMORY FOR MULTILEVEL DATA STORAGE 有权
标题翻译：基于MIS-TRANSISTOR的非易失性存储器，用于多种数据存储
公开(公告)号：US20090310428A1
公开(公告)日：2009-12-17
申请号：US12139550
申请日：2008-06-16
申请人： Tadahiko Horiuchi , Kenji Noda
发明人： Tadahiko Horiuchi , Kenji Noda
IPC分类号： G11C7/00
CPC分类号： G11C11/5671 , G11C2211/5642 , G11C2211/5647
摘要： A memory circuit includes a latch having a first node and a second node to store data such that a logic level of the first node is an inverse of a logic level of the second node, a MIS transistor having a gate node, a first source/drain node, and a second source/drain node, the first source/drain node coupled to the first node of the latch, and a control circuit configured to control the gate node and second source/drain node of the MIS transistor to make an upward lingering change in a threshold voltage of the MIS transistor in a first operation in response to data stored in the latch and to make a downward lingering change in the threshold voltage in a second operation in response to data stored in the latch.
摘要翻译：存储器电路包括具有第一节点和第二节点的锁存器，用于存储数据，使得第一节点的逻辑电平为第二节点的逻辑电平的倒数，具有门节点的MIS晶体管，第一源极/ 漏极节点和第二源极/漏极节点，耦合到锁存器的第一节点的第一源极/漏极节点以及控制电路，被配置为控制MIS晶体管的栅极节点和第二源极/漏极节点向上响应于存储在锁存器中的数据，在第一操作中MIS晶体管的阈值电压的持续变化，并且响应于存储在锁存器中的数据，在第二操作中使阈值电压下降。

56. 发明授权

US07630247B2 MIS-transistor-based nonvolatile memory 有权
标题翻译：基于MIS晶体管的非易失性存储器
公开(公告)号：US07630247B2
公开(公告)日：2009-12-08
申请号：US12036938
申请日：2008-02-25
申请人： Kenji Noda
发明人： Kenji Noda
IPC分类号： G11C16/04
CPC分类号： G11C14/00 , G11C14/0063
摘要： A nonvolatile semiconductor memory device includes a latch circuit including a first inverter and a second inverter cross-coupled to each other, a source node of a MIS transistor of the first inverter and a source node of a MIS transistor of the second inverter being both coupled to a plate line, and a control circuit configured to apply a first potential to the plate line in a store mode to cause a change in threshold voltage to one of the MIS transistors, and configured to apply a second potential to the plate line in a power-on mode to cause the latch circuit to latch data responsive to the change in threshold voltage generated in the store mode, such that the data latched by the latch circuit in the power-on mode is automatically output to outside the nonvolatile semiconductor memory device upon power-on thereof.
摘要翻译：一种非易失性半导体存储器件，包括：锁存电路，包括第一反相器和彼此交叉耦合的第二反相器，第一反相器的MIS晶体管的源极节点和第二反相器的MIS晶体管的源极节点都耦合以及控制电路，其被配置为在存储模式下向所述板线施加第一电位，以引起对所述MIS晶体管之一的阈值电压的改变，并且被配置为向所述板线施加第二电位电源接通模式，以使得锁存电路根据在存储模式下产生的阈值电压的变化来锁存数据，使得由电源接通模式中的锁存电路锁存的数据自动输出到非易失性半导体存储器件外部上电时。

57. 发明授权

US07483290B2 Nonvolatile memory utilizing hot-carrier effect with data reversal function 有权
标题翻译：使用具有数据反转功能的热载波效应的非易失性存储器
公开(公告)号：US07483290B2
公开(公告)日：2009-01-27
申请号：US11701958
申请日：2007-02-02
申请人： Takashi Kikuchi , Kenji Noda
发明人： Takashi Kikuchi , Kenji Noda
IPC分类号： G11C11/00
CPC分类号： G11C14/00 , G11C14/0063
摘要： A nonvolatile semiconductor memory device includes a control circuit, an inverting circuit, and memory units, each of the memory units including a latch having a first node and a second node, a plate line, a first MIS transistor having one of source/drain nodes coupled to the first node of the latch, another one of the source/drain nodes coupled to the plate line, and a gate node coupled to a word line, and a second MIS transistor having one of source/drain nodes coupled to the second node of the latch, another one of the source/drain nodes coupled to the plate line, and a gate node coupled to the word line, wherein the control circuit is configured to invert the data latched in the latch by reading the data from the latch, causing the inverting circuit to invert the read data, and writing the inverted data to the latch.
摘要翻译：非易失性半导体存储器件包括控制电路，反相电路和存储器单元，每个存储器单元包括具有第一节点和第二节点的锁存器，板线，具有源/漏节点之一的第一MIS晶体管耦合到锁存器的第一节点，耦合到板线的源极/漏极节点中的另一个以及耦合到字线的栅极节点以及耦合到第二节点的源极/漏极节点之一的第二MIS晶体管耦合到板线的源/漏节点中的另一个和耦合到字线的栅极节点，其中控制电路被配置为通过从锁存器读取数据来反转锁存在锁存器中的数据，使反相电路反转读取的数据，并将反相数据写入锁存器。

58. 发明授权

US07476213B2 Method and system for supplying gas into a body 有权
标题翻译：将气体供入体内的方法和系统
公开(公告)号：US07476213B2
公开(公告)日：2009-01-13
申请号：US11174251
申请日：2005-07-01
申请人： Takefumi Uesugi , Daisuke Sano , Yoshimine Kobayashi , Mutsumi Ohshima , Takehiro Nishiie , Atsuhiko Kasahi , Kenji Noda
发明人： Takefumi Uesugi , Daisuke Sano , Yoshimine Kobayashi , Mutsumi Ohshima , Takehiro Nishiie , Atsuhiko Kasahi , Kenji Noda
IPC分类号： A61M37/00
CPC分类号： A61M13/003 , A61B34/10
摘要： In a gas supply system, a selection unit is configured to send an instruction to select any one of first gas and second gas. In the gas supply system, a controller is operative to control at least one of a first gas supply unit for supplying the first gas and a second gas supply unit for supplying the second gas to selectively insufflate any one of the first gas and second gas into a body based on the instruction sent from the selection unit.
摘要翻译：在气体供给系统中，选择单元被配置为发送选择第一气体和第二气体中的任何一个的指令。在气体供给系统中，控制器用于控制用于供给第一气体的第一气体供给单元和用于供给第二气体的第二气体供给单元中的至少一个，以选择性地将第一气体和第二气体中的任一个吸入，基于从选择单元发送的指令的身体。

59. 发明申请

US20080062745A1 HOT-CARRIER-BASED NONVOLATILE MEMORY UTILIZING DIFFERING TRANSISTOR STRUCTURES 有权
标题翻译：基于热载体的非易失性存储器利用不同的晶体管结构
公开(公告)号：US20080062745A1
公开(公告)日：2008-03-13
申请号：US11518066
申请日：2006-09-08
申请人： Kenji Noda
发明人： Kenji Noda
IPC分类号： G11C16/04 , G11C11/00 , G11C11/34 , G11C7/10
CPC分类号： G11C11/412 , G11C16/10 , H01L29/66825 , H01L29/7881
摘要： A memory circuit includes a latch having a first node and a second node, a first MIS transistor operable to couple between the first node and a predetermined node, a second MIS transistor operable to couple between the second node and the predetermined node, and a control circuit configured to subject one of the first MIS transistor and the second MIS transistor to bias conditions that cause a lingering change in transistor characteristics thereof, wherein the MIS transistors of the latch have a lightly-doped-drain structure that includes first diffusion regions having a first impurity concentration and second diffusion regions having a second impurity concentration smaller than the first impurity concentration, and each of the first MIS transistor and the second MIS transistor has a doped diffusion region closest to a conduction channel with an impurity concentration different from the second impurity concentration.
摘要翻译：存储器电路包括具有第一节点和第二节点的锁存器，可操作以在第一节点和预定节点之间耦合的第一MIS晶体管，可操作以在第二节点和预定节点之间耦合的第二MIS晶体管，以及控制器电路，被配置为使所述第一MIS晶体管和所述第二MIS晶体管中的一个偏置导致其晶体管特性的延迟变化的条件，其中所述锁存器的所述MIS晶体管具有轻掺杂漏极结构，所述轻掺杂漏极结构包括具有第一杂质浓度和第二杂质浓度小于第一杂质浓度的第二扩散区，并且第一MIS晶体管和第二MIS晶体管中的每一个具有最靠近导电沟道的掺杂扩散区，杂质浓度不同于第二杂质浓度浓度。

60. 发明授权

US07342821B1 Hot-carrier-based nonvolatile memory utilizing differing transistor structures 有权
标题翻译：采用不同晶体管结构的基于热载波的非易失性存储器
公开(公告)号：US07342821B1
公开(公告)日：2008-03-11
申请号：US11518066
申请日：2006-09-08
申请人： Kenji Noda
发明人： Kenji Noda
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , G11C16/10 , H01L29/66825 , H01L29/7881
摘要： A memory circuit includes a latch having a first node and a second node, a first MIS transistor operable to couple between the first node and a predetermined node, a second MIS transistor operable to couple between the second node and the predetermined node, and a control circuit configured to subject one of the first MIS transistor and the second MIS transistor to bias conditions that cause a lingering change in transistor characteristics thereof, wherein the MIS transistors of the latch have a lightly-doped-drain structure that includes first diffusion regions having a first impurity concentration and second diffusion regions having a second impurity concentration smaller than the first impurity concentration, and each of the first MIS transistor and the second MIS transistor has a doped diffusion region closest to a conduction channel with an impurity concentration different from the second impurity concentration.
摘要翻译：存储器电路包括具有第一节点和第二节点的锁存器，可操作以在第一节点和预定节点之间耦合的第一MIS晶体管，可操作以在第二节点和预定节点之间耦合的第二MIS晶体管，以及控制器电路，被配置为使所述第一MIS晶体管和所述第二MIS晶体管中的一个偏置导致其晶体管特性的延迟变化的条件，其中所述锁存器的所述MIS晶体管具有轻掺杂漏极结构，所述轻掺杂漏极结构包括具有第一杂质浓度和第二杂质浓度小于第一杂质浓度的第二扩散区，并且第一MIS晶体管和第二MIS晶体管中的每一个具有最靠近导电沟道的掺杂扩散区，杂质浓度不同于第二杂质浓度浓度。

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