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51. 发明授权

US08201763B2 Self-propelled crushing system 失效
标题翻译：自走式破碎系统
公开(公告)号：US08201763B2
公开(公告)日：2012-06-19
申请号：US12597552
申请日：2008-04-11
申请人： Mitsunobu Yamada , Toshimasa Kanda , Hiroyuki Umeda , Koya Iizuka , Masaru Nakamura , Masaaki Uetake
发明人： Mitsunobu Yamada , Toshimasa Kanda , Hiroyuki Umeda , Koya Iizuka , Masaru Nakamura , Masaaki Uetake
IPC分类号： B02C19/20 , B02C9/04
CPC分类号： B02C21/026 , B02C23/02
摘要： A mobile crushing system is for crushing inputted objects and dropping the crushed objects directly into an ore path. The mobile crushing system includes a crusher vehicle on which a crushing device for crushing the objects is mounted and which includes carriers, and a feeder vehicle on which a transfer device for transferring the objects to the crushing device and which includes carriers. The crusher vehicle and the feeder vehicle travel independently and include a crusher-side connecting portion and a feeder-side connecting portion that are connected to each other. During crushing operation, the ore path is interposed between the crusher vehicle and the feeder vehicle in the front-rear direction.
摘要翻译：移动破碎系统用于破碎输入物体并将破碎的物体直接放入矿石路径。移动破碎系统包括：破碎机，其上安装有用于破碎物体的破碎装置，并且包括载体;以及馈送车，其上传送装置用于将物体传送到破碎装置并包括载体。破碎机车辆和送料车辆独立地行进，并且包括彼此连接的破碎机侧连接部和进料器侧连接部。在破碎操作期间，矿石路径在前后方向插入在破碎机车辆和进料车辆之间。

52. 发明授权

US08054600B2 Switching power supply device 有权
标题翻译：开关电源装置
公开(公告)号：US08054600B2
公开(公告)日：2011-11-08
申请号：US12345042
申请日：2008-12-29
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H02H3/20
CPC分类号： H02H7/1213 , H02H3/07
摘要： A switching power supply device includes: a switching element connected through a primary winding of a transformer to an output end of an input rectifying/smoothing circuit that rectifies and smoothes an alternating current input voltage and outputs a direct current input voltage; an output rectifying/smoothing circuit that rectifies and smoothes a voltage induced in a secondary winding of the transformer and outputs a direct current output voltage; and a control circuit that controls ON and OFF of the switching element. The control circuit includes an overvoltage protection circuit that detects a voltage corresponding to the direct current output voltage and a voltage corresponding to the alternating current input voltage, outputs an overvoltage operation prohibition signal for prohibiting ON and OFF operations of the switching element when the voltage corresponding to the direct current output voltage rises to a first threshold value or more, and releases the overvoltage operation prohibition signal when the alternating current input voltage drops and the voltage corresponding to the alternating current input voltage falls down below a second threshold value.
摘要翻译：开关电源装置包括：开关元件，其通过变压器的初级绕组连接到整流和平滑交流输入电压并输出直流输入电压的输入整流/平滑电路的输出端; 输出整流/平滑电路，对变压器次级绕组中感应的电压进行整流和平滑，并输出直流输出电压; 以及控制电路，其控制开关元件的接通和断开。控制电路包括过电压保护电路，其检测对应于直流输出电压的电压和对应于交流输入电压的电压，输出用于禁止开关元件的导通和截止操作的过电压操作禁止信号，当相应的电压直流输出电压上升到第一阈值以上，并且当交流输入电压下降并且与交流输入电压相对应的电压下降到低于第二阈值时，释放过电压操作禁止信号。

53. 发明授权

US07999983B2 Lens material, optical electronic component and optical electronic device 有权
标题翻译：镜片材料，光电子元件和光电子器件
公开(公告)号：US07999983B2
公开(公告)日：2011-08-16
申请号：US10595942
申请日：2004-10-13
申请人： Makoto Kumatoriya , Shinichiro Chiku , Mikio Geho , Takashi Fujii , Kenji Kitamura , Shunji Takekawa , Masaru Nakamura
发明人： Makoto Kumatoriya , Shinichiro Chiku , Mikio Geho , Takashi Fujii , Kenji Kitamura , Shunji Takekawa , Masaru Nakamura
IPC分类号： G02B5/32 , G02B26/08 , G02B26/10 , G02B13/14 , G03H1/02 , G02F1/29
CPC分类号： G02B1/08 , C30B15/12 , C30B29/30 , G02B1/02 , G02B3/00
摘要： An optical material includes lithium tantalate, and a molar composition ratio of lithium oxide and tantalum oxide (Li2O/Ta2O5) in the lithium tantalate is in the range of 0.975 to 0.982. Since an optical material having a high refractive index is provided in an optical unit, at the same focal distance, a lens thickness can be significantly reduced. As a result, an optical electronic component and an optical electronic device including the optical material has a reduced size and thickness and is highly functional.
摘要翻译：光学材料包括钽酸锂，并且钽酸锂中的氧化锂和氧化钽（Li 2 O / Ta 2 O 5）的摩尔组成比在0.975至0.982的范围内。由于在光学单元中设置了具有高折射率的光学材料，所以在相同的焦距下，可以显着地减小透镜厚度。结果，包括光学材料的光学电子部件和光学电子器件具有减小的尺寸和厚度并且具有高功能性。

54. 发明授权

US07920453B2 Optical information recording/reproduction apparatus and recording condition adjusting method 失效
标题翻译：光信息记录/再现装置和记录条件调整方法
公开(公告)号：US07920453B2
公开(公告)日：2011-04-05
申请号：US12309032
申请日：2007-06-27
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： G11B7/00
CPC分类号： G11B20/10009 , G11B7/005 , G11B20/10037 , G11B20/10046 , G11B20/10055 , G11B20/10101 , G11B20/10111 , G11B20/1012 , G11B20/10212 , G11B20/10296 , G11B20/10425 , G11B20/14 , G11B2220/2537
摘要： An adaptive equalization circuit (105) operates for PR-equalization of the reproduced signal that is subjected to an A/D conversion by an A/D converter (103) and shaped by a waveform shaping circuit (104). An ideal-waveform generation circuit (110) generates an ideal waveform that corresponds to the reproduced signal that is binarized by a Viterbi-decoding circuit (108). A mark-length/space-length calculation circuit (112) calculates the actual mark length/space length relative to the mark length/space length to be formed, based on the equalization error that arises when the ideal waveform assumes a central reference level as calculated by an equalization-error calculation circuit (111) and the intervals of polarity inversions of binarized data detected by a 0-cross detection circuit (109). A system controller (114) adjusts the edge shift quantity of the recording waveform when forming a mark based on the calculated mark length/space length.
摘要翻译：自适应均衡电路（105）对通过A / D转换器（103）进行A / D转换的再生信号的PR均衡进行操作，并由波形整形电路（104）整形。理想波形生成电路（110）产生与由维特比解码电路（108）二值化的再现信号对应的理想波形。标记长度/空间长度计算电路（112）基于当理想波形呈现中心参考电平时出现的均衡误差来计算相对于要形成的标记长度/空格长度的实际标记长度/空格长度通过均衡误差计算电路（111）计算，以及由0交叉检测电路（109）检测的二值化数据的极性反转的间隔。系统控制器（114）根据所计算的标记长度/间隔长度，在形成标记时，调整记录波形的边沿位移量。

55. 发明授权

US07696012B2 Wafer dividing method 有权
标题翻译：晶圆分割法
公开(公告)号：US07696012B2
公开(公告)日：2010-04-13
申请号：US12379523
申请日：2009-02-24
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H01L21/301
CPC分类号： B28D5/0011 , B23K26/032 , B23K26/40 , B23K26/53 , B23K2103/50 , H01L21/78 , Y10S438/94
摘要： A method of dividing a wafer having a plurality of streets, which are formed in a lattice pattern on the front surface, and having devices, which are formed in a plurality of areas sectioned by the plurality of streets, into individual devices along the streets, comprising: a protective member-affixing step for affixing a protective member for protecting devices onto the front surface of the wafer; a deteriorated layer-forming step for applying a laser beam of a wavelength having permeability for the wafer from the rear surface side of the wafer along the streets to form a deteriorated layer along the streets in an area where it does not reach the final thickness of each device from the front surface of the wafer and the rear surface of the wafer in the inside of the wafer; a groove-forming step for cutting areas corresponding to the streets from the rear surface side of the wafer where the deteriorated layer has been formed along the streets to form a groove reaching the deteriorated layer; a dividing the wafer into individual devices along the streets where the deteriorated layer and the groove have been formed by exerting external force to the wafer; and a grinding the rear surface of the wafer which has been divided into individual devices until the final thickness of each device is achieved.
摘要翻译：一种分割具有多个街道的晶片的方法，所述多个街道在前表面上形成为格子图案，并且具有形成在由多个街道划分的多个区域中的装置沿着街道形成单独的装置，包括：保护构件固定步骤，用于将用于保护装置的保护构件固定在晶片的前表面上; 劣化的层形成步骤，用于沿着街道从晶片的后表面侧施加具有晶片渗透率的波长的激光束，以在其未达到最终厚度的区域沿街道形成劣化层每个器件从晶片的前表面和晶片的后表面在晶片的内部; 槽形成步骤，用于沿着街道从已经形成有劣化层的晶片的背面侧切割与街道相对应的区域，以形成到达劣化层的槽; 通过向晶片施加外力，将晶片分成沿着街道的各种装置，其中形成了劣化层和凹槽; 以及研磨已经被分成各个装置的晶片的后表面，直到实现每个装置的最终厚度。

56. 发明申请

US20100015784A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100015784A1
公开(公告)日：2010-01-21
申请号：US12496406
申请日：2009-07-01
申请人： Masaru Nakamura , Masatoshi Wakahara , Motoko Nakayama , Yuki Nakamura
发明人： Masaru Nakamura , Masatoshi Wakahara , Motoko Nakayama , Yuki Nakamura
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , B23K26/009 , B23K26/042 , B23K26/40 , B23K2103/172 , B23K2103/42 , B23K2103/50
摘要： In a semiconductor device manufacturing method in which a wafer formed with devices in a plurality of areas sectioned by a plurality of streets formed in a lattice-like pattern on the front surface is divided into the individual devices along the streets, when the wafer is divided into the individual devices by exposing cut grooves formed along the streets by a dicing before grinding process, a rigid plate is applied to the front surface of the wafer and an adhesive film is attached to the rear surface of the wafer. Thereafter, a separation groove forming step is performed in which a laser beam is directed to the adhesive film along the cut grooves form the dicing tape side applied with the wafer attached with the adhesive film to form separation grooves in the adhesive film along the cut grooves.
摘要翻译：在半导体器件制造方法中，将形成有在前表面上以格子状形成的多个街道的多个区域中的元件形成的晶片沿着街道划分为各个器件，当晶片被分割时通过在研磨处理之前通过切割将沿着街道形成的切割槽暴露在单个装置中，将刚性板施加到晶片的前表面，并且将粘合剂膜附着到晶片的后表面。此后，进行分离槽形成步骤，其中激光束沿着切割槽被引导到粘合膜，形成施加有粘合剂膜的晶片的切割带侧，以沿着切割槽在粘合膜中形成分离槽。

57. 发明申请

US20100003119A1 METHOD FOR PICKING UP DEVICE ATTACHED WITH ADHESIVE TAPE 审中-公开
标题翻译：用于拾取附带胶带的装置的方法
公开(公告)号：US20100003119A1
公开(公告)日：2010-01-07
申请号：US12168437
申请日：2008-07-07
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/67132 , H01L21/67144
摘要： A method for picking up a device stuck with an adhesive film includes an tape expansion step for expanding a dicing tape to increase intervals between devices and between adhesive films by pressing an area between an inner diameter of the annular frame of the dicing tape and the wafer by means of an expansion member with the annular frame held; and a picking-up step for picking up the device and the adhesive film from the dicing tape. A relative shifting rate between the expansion member and the frame holding means is set to 100 mm/second or more when the expansion member and the dicing tape are brought into abutment against each other in the tape expansion step, and the increased intervals between the devices and between the adhesive films are each set to 100 μm or more.
摘要翻译：用于拾取粘贴有粘合剂膜的装置的方法包括：带膨胀步骤，用于通过挤压切割带的环形框架的内径和晶片之间的区域来扩展切割带以增加装置之间和粘合剂膜之间的间隔借助于一个具有环形框架的膨胀件; 以及用于从切割带拾取装置和粘合剂膜的拾取步骤。当扩张构件和切割带在带膨胀步骤中彼此抵接时，膨胀构件和框架保持装置之间的相对移动速率被设定为100mm /秒以上，并且设备之间的间隔增加并且在粘合膜之间各自设定为100μm以上。

58. 发明申请

US20090262618A1 TILT ADJUSTING METHOD AND INFORMATION RECORDING/REPRODUCING APPARATUS USING THE SAME 有权
标题翻译：倾斜调整方法和信息记录/再现装置
公开(公告)号：US20090262618A1
公开(公告)日：2009-10-22
申请号：US12064215
申请日：2006-09-19
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： G11B7/00
CPC分类号： G11B7/0956 , G11B7/005 , G11B20/10009 , G11B20/10111 , G11B20/1012 , G11B20/10296 , G11B20/10481 , G11B2220/2537
摘要： [Problems] To effectively perform optimal tilt adjustment. [Means for Solving the Problems] A tilt adjusting method adjusts a tilt angle of an actual incident light and reflected light with respect to an incident light and a reflected light under optimal tilt when recording and reproducing data onto/from an information recording medium. Two or more output signals having a balance between a signal component and a noise component changing with respect to a parameter of a correction object are extracted from the reproduction signal of the information recording medium and the signal component and the noise component are evaluated for performing signal correction, thereby calculating a first and a second coefficient. When the first coefficient is out of a set reference range, the tilt adjustment is performed by the first coefficient and when the first coefficient in the set reference range, the tilt adjustment is performed by the second coefficient.
摘要翻译： [问题]有效执行最佳倾斜调整。解决问题的方法当在信息记录介质上记录和再现数据时，倾斜调整方法调整实际入射光和反射光相对于入射光和最佳倾斜下的反射光的倾斜角。从信息记录介质的再现信号中提取具有相对于校正对象的参数改变的信号分量和噪声分量之间的平衡的两个或更多个输出信号，并且评估噪声分量以执行信号校正，从而计算第一和第二系数。当第一系数超出设定的参考范围时，通过第一系数执行倾斜调整，并且当设定的参考范围中的第一系数时，通过第二系数执行倾斜调整。

59. 发明授权

US07605058B2 Wafer dividing method 有权
标题翻译：晶圆分割法
公开(公告)号：US07605058B2
公开(公告)日：2009-10-20
申请号：US12122952
申请日：2008-05-19
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L21/67132
摘要： A wafer dividing method is provided that includes a protective plate sticking step of sticking the face of the wafer to the face of a protective plate by a pressure sensitive adhesive material whose adhesive force is decreased by an external stimulus; a degeneration layer formation step of throwing a laser beam, which permeates the wafer, along the street to the back side of the wafer, thereby forming a degeneration layer of a thickness corresponding to at least the finished thickness of the device within the wafer, the degeneration layer starting at the face of the wafer; a back grinding step of grinding the back of the wafer to form the wafer into the finished thickness of the device; a wafer support step of sticking the back of the wafer to a surface of a dicing tape mounted on an annular frame; an adhesive force decreasing step of imparting an external stimulus to the pressure sensitive adhesive material, thereby decreasing the adhesive force of the pressure sensitive adhesive material; a protective plate peeling step of peeling the protective plate from the face of the wafer; and a wafer rupture step of imparting an external force to the wafer, thereby rupturing the wafer along the street.
摘要翻译：提供了一种晶片分割方法，其包括通过外部刺激使粘合力降低的压敏粘合剂将保护板的表面粘贴在晶片的表面上的保护板粘贴步骤; 沿着街道向晶片的背面投射透过晶片的激光束的退化层形成步骤，从而形成厚度对应于晶片内的器件的最终厚度的至少一层的退化层，退化层从晶片的表面开始; 背面研磨步骤，研磨晶片的背面，以将晶片形成装置的成品厚度; 晶片支撑步骤，将晶片的背面粘贴到安装在环形框架上的切割带的表面; 赋予压敏粘合剂材料外部刺激的粘合力降低步骤，从而降低压敏粘合剂材料的粘合力; 保护板剥离步骤，从所述晶片的表面剥离所述保护板; 以及向晶片施加外力的晶片断裂步骤，从而沿着街道破裂晶片。

60. 发明申请

US20090142906A1 METHOD OF DIVIDING WAFER 有权
标题翻译：分割方法
公开(公告)号：US20090142906A1
公开(公告)日：2009-06-04
申请号：US12272320
申请日：2008-11-17
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H01L21/302
CPC分类号： H01L21/67132 , H01L21/78
摘要： A method of dividing a wafer includes: a denatured layer forming step of forming a denatured layer in the inside of the wafer along streets; a first feeding step in which the whole area of the wafer's back-side surface is suction held, and the wafer is mounted on a support base of a tape adhering unit, with the wafer's back-side surface on the upper side; a dicing tape adhering step of adhering a dicing tape to the wafer's back-side surface and an annular frame; a wafer reversing step of reversing the wafer and the annular frame face side back; a second feeding step of feeding said wafer and said annular frame to a tape expanding unit whole holding them by suction; a protective tape peeling step of peeling off a protective tape adhered to the wafer's face-side surface; and a wafer dividing step of expanding the dicing tape so as to divide the wafer along the streets along which the denatured layer has been formed.
摘要翻译：分割晶片的方法包括：变性层形成步骤，沿着街道在晶片内部形成变性层; 将晶片背面的整个区域吸引保持的第一供给工序，将晶片安装在带状粘接单元的支撑基板上，将晶片的背面设置在上侧; 将切割带粘附到晶片的背面表面的切割胶粘合步骤和环形框架; 将晶片和环形框架面侧反转的晶片倒转步骤; 第二馈送步骤，将所述晶片和所述环形框架馈送到整个通过抽吸保持它们的带扩展单元; 保护带剥离步骤，剥离粘附到晶片的表面侧的保护带; 以及晶片分割步骤，使切割带扩展，以沿着形成有变性层的街道划分晶片。

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