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51. 发明授权

US06858829B2 Avalanche photodiode array biasing device and avalanche photodiode structure 有权
标题翻译：雪崩光电二极管阵列偏置装置和雪崩光电二极管结构
公开(公告)号：US06858829B2
公开(公告)日：2005-02-22
申请号：US09885906
申请日：2001-06-20
申请人： Ken A. Nishimura , Brian E. Lemoff , James N. Hollenhorst
发明人： Ken A. Nishimura , Brian E. Lemoff , James N. Hollenhorst
IPC分类号： H01L27/146 , H01L31/02 , H01L31/107 , H01J40/14
CPC分类号： H01L31/107 , H01L27/14643 , H01L31/02027
摘要： A photodiode array includes a plurality of arrayed individual diode devices. The arrayed diode devices include at least one active photodiode and at least one reference diode. A bias control circuit for the array monitors operation of the reference diode at an applied first bias voltage and adjusts that applied first bias voltage until optimal reference diode operation is reached. A second bias voltage having predetermined relationship to the first bias voltage is applied to the active photodiode to optimally configure array operation. More specifically, an operational characteristic of the reference diode at the first bias voltage is monitored and compared to a reference value. As a result of this comparison, the circuit adjusts the applied first and second bias voltage in order to drive the reference diode measured characteristic to substantially match the reference value. The operational characteristic that is measured may comprise reference diode responsivity or reference diode output current, and may be based on either electrical or optical device operation. Each avalanche photodiode semiconductor structure may have a conventional reverse biased pn junction semiconductor structure providing a high field region as is well known in the art. An enhanced semiconductor structure may also be utilized wherein a heavily doped layer that is physically separate from the pn junction is also included to provide a source of charge carriers that are swept into the high field region.
摘要翻译：光电二极管阵列包括多个排列的独立二极管器件。阵列二极管器件包括至少一个有源光电二极管和至少一个参考二极管。用于阵列的偏置控制电路监视所施加的第一偏置电压下的参考二极管的操作，并调整所施加的第一偏置电压，直到达到最佳参考二极管操作。将具有与第一偏置电压具有预定关系的第二偏置电压施加到有源光电二极管以最佳地配置阵列操作。更具体地，监视第一偏置电压下的参考二极管的工作特性并将其与参考值进行比较。作为该比较的结果，电路调整所施加的第一和第二偏置电压，以驱动参考二极管测量的特性，使其基本上与参考值相匹配。测量的操作特性可以包括参考二极管响应度或参考二极管输出电流，并且可以基于电或光器件操作。每个雪崩光电二极管半导体结构可以具有常规的反向偏置pn结半导体结构，其提供本领域公知的高场区域。还可以使用增强的半导体结构，其中与pn结物理分离的重掺杂层也被包括在内，以提供扫描到高场区域中的电荷载流子源。

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