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    • 54. 发明授权
    • Method for improving electrical conductivity of a metal oxide layer on a substrate utilizing high energy beam mixing
    • 利用高能量束混合改善衬底上的金属氧化物层的导电性的方法
    • US06599580B2
    • 2003-07-29
    • US08847946
    • 1997-05-01
    • Barry C. MuffolettoAshish ShahDonald H. Stephenson
    • Barry C. MuffolettoAshish ShahDonald H. Stephenson
    • B05D300
    • H01G4/008C23C14/5833C23C14/5893C23C16/56C23C26/00C23C26/02H01G9/042H01M4/661Y10S148/90Y10S428/926Y10S428/931Y10T428/8305
    • A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu and then directing a high energy beam onto the substrate to cause an intermixing of the deposited material with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from electrically insulating to electrically conductive. The step of depositing can be carried out, for example, by ion beam assisted deposition, electron beam deposition, chemical vapor deposition, physical vapor deposition, plasma assisted, low pressure plasma and plasma spray deposition and the like. The high energy beam can be an ion beam from a high energy ion source or it can be a laser beam. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.
    • 1.一种用于改善金属,金属合金或金属氧化物的基底的导电性的方法,包括从ⅦA族金属(Fe,Ru,Os,Co,Rh,Ir,Ni,Pd等)中沉积少量或少量的金属或金属, Pt)或VA族金属(V,Nb,Ta)的金属,金属合金和/或金属氧化物的基底上的IA族金属(Cu,Ag,Au) 将VIA金属(Cr,Mo,W)和Al,Mn,Ni和Cu组合,然后将高能束引导到衬底上,以使沉积材料与衬底金属或金属合金的天然氧化物混合。 天然氧化物层由电绝缘转变为导电。 沉积步骤可以例如通过离子束辅助沉积,电子束沉积,化学气相沉积,物理气相沉积,等离子体辅助,低压等离子体和等离子体喷涂沉积等进行。 高能束可以是来自高能离子源的离子束,也可以是激光束。 沉积可以在处理的或未处理的基底上进行。 具有导电性的自然氧化物层的衬底可用于制造诸如电容器和电池的器件的电极。
    • 55. 发明授权
    • One step ultrasonically coated substrate for use in a capacitor
    • 用于电容器的一步超声波涂覆的基板
    • US06224985B1
    • 2001-05-01
    • US09304706
    • 1999-05-04
    • Ashish ShahBarry C. Muffoletto
    • Ashish ShahBarry C. Muffoletto
    • B32B700
    • H01G9/04Y10T428/31678
    • A deposition process for coating a substrate with an ultrasonically generated aerosol spray of a pseudocapacitive material, or a precursor thereof, contacted to a substrate heated to a temperature to instantaneously solidify the pseudocapacitive material or convert the precursor to a solidified pseudocapacitive metal compound, is described. The ultrasonic aerosol droplets are much smaller in size than those produced by conventional processes and the heated substrate minimizes the possibility of contamination, thereby providing the present coating having an increased surface area. When the coated substrate is an electrode in a capacitor, a greater surface area results in an increased electrode capacitance.
    • 描述了用超声波生成的假电容材料或其前体的气溶胶喷雾剂涂覆基底的沉积工艺,其接触加热到温度以瞬时固化假电容材料或将前体转化为固化的假电容性金属化合物的基底 。 超声波气溶胶液滴的尺寸比常规方法的尺寸要小得多,并且加热的基底使污染的可能性最小化,从而使得本涂层具有增加的表面积。 当涂覆的基底是电容器中的电极时,更大的表面积导致电极电容增加。
    • 59. 发明授权
    • Dual-facing camera assembly
    • 双面相机组合
    • US08497536B2
    • 2013-07-30
    • US13235121
    • 2011-09-16
    • Gang ChenAshish ShahDuli MaoHsin-Chih TaiHoward E. Rhodes
    • Gang ChenAshish ShahDuli MaoHsin-Chih TaiHoward E. Rhodes
    • H01L31/062H01L31/113
    • H01L27/14645H01L27/14605H01L27/1462H01L27/14621H01L27/14627H01L27/14634H01L27/14636H01L27/1464H01L27/1469
    • Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate).In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.
    • 本发明的实施例涉及一种照相机组件,其包括背面照相机和可操作地耦合在一起的例如相机(例如,粘合的,堆叠在公共衬底上)的前置照相机。 在本发明的一些实施例中,具有前侧照明(FSI)成像像素阵列的系统被结合到具有背面照明(BSI)成像像素阵列的系统,从而产生具有最小尺寸的照相机组件(例如,减小的 厚度与现有技术的解决方案相比)。 可以使用FSI图像传感器晶片作为BSI图像传感器晶片的处理晶片,当其变薄时,从而减小整个相机模块的厚度。 根据本发明的其它实施例,两个封装管芯,一个BSI图像传感器,另一个是FSI图像传感器,堆叠在诸如印刷电路板的公共基板上,并且通过再分配层可操作地耦合在一起。