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    • 51. 发明授权
    • High speed bus circuit system
    • 高速总线电路系统
    • US5982192A
    • 1999-11-09
    • US15942
    • 1998-01-30
    • Seiichi Saito
    • Seiichi Saito
    • G06F3/00G06F13/40H04B3/02H03K17/16H03K19/0175H01K3/08
    • G06F13/4086Y02B60/1228Y02B60/1235
    • A high speed bus circuit system according to the present invention includes a bus having alternately connected resistors and transmission lines, and integrated circuits. Each of the resistors has a predetermined resistance value. The transmission lines are mounted on print circuit boards. The bus is connected in a loop form as a whole. Each of the integrated circuits has a driver and a receiver. The driver and receiver are connected to respective one of the resistors. As a result, DC power dissipation in the terminal resistor of the bus circuit is suppressed. In addition, high speed signal transfer causing less waveform distortion is made possible.
    • 根据本发明的高速总线电路系统包括具有交替连接的电阻器和传输线以及集成电路的总线。 每个电阻器具有预定的电阻值。 传输线安装在印刷电路板上。 总线以整体的循环形式连接。 每个集成电路都有一个驱动器和一个接收器。 驱动器和接收器连接到相应的一个电阻器。 结果,总线电路的终端电阻器中的直流功率损耗被抑制。 此外,可以实现导致较少波形失真的高速信号传输。
    • 52. 发明授权
    • Er:YVO.sub.4 laser oscillator, solid-state laser material and method for
manufacturing the same
    • 呃:YVO4激光振荡器,固体激光材料及其制造方法
    • US5402434A
    • 1995-03-28
    • US132304
    • 1993-10-06
    • Shoko ManakoSeiichi SaitoYasuhiko Kuwano
    • Shoko ManakoSeiichi SaitoYasuhiko Kuwano
    • C30B15/00H01S3/06H01S3/16
    • H01S3/16C30B15/00C30B29/16H01S3/0604H01S3/1608H01S3/1673
    • An Er:YVO.sub.4 laser oscillator has an excitation light source constituted by a laser diode and a medium constituted by an Er:YVO.sub.4 crystal in which Er.sup.3+ ions are activators and YVO.sub.4 is a host material. The oscillation light is perpendicular or parallel to c-axis of the crystal. The laser operates in target wavelengths on energy transitions of the Er.sup.3+ ions, the target wavelengths being 510 nm to 590 nm, 840 nm to 870 nm, 970 nm to 1020 nm, and 1450 nm to 1700 nm. The crystal is coated with a TiO.sub.2 --SiO.sub.2 system high reflection mirror coating and a fluoride megnesium-zeolite system antireflection coating corresponding to the target wavelengths and a fluoride megnesium-zeolite system antireflection coating corresponding to the wavelength of the laser diode. These coatings together with an output mirror constitute a resonator. For manufacturing the crystal, Er.sub.2 O.sub.3, Y.sub.2 O.sub.3, and V.sub.2 O.sub.5 used as starting materials are subjected to a Czochralski growth process using a high frequency induction heating furnace with the direction of growth being in an a-axis. This is followed by a thermal treatment under a temperature in the neighborhood of a growth temperature or a thermal treatment in an oxygen atmosphere. It has been made possible to produce a single laser crystal of YVO.sub.4 with an improved quality and enhanced yield.
    • Er:YVO4激光振荡器具有由激光二极管构成的激发光源和由Er 3+离子为活化剂且YVO 4为主体的Er:YVO4晶体构成的介质。 振荡光垂直或平行于晶体的c轴。 激光器在Er3 +离子的能量跃迁上以目标波长工作,目标波长为510nm至590nm,840nm至870nm,970nm至1020nm,以及1450nm至1700nm。 该晶体涂覆有对应于目标波长的TiO 2 -SiO 2体系高反射镜涂层和氟化物晶体 - 沸石体系抗反射涂层,以及对应于激光二极管的波长的氟化物晶体 - 沸石系统抗反射涂层。 这些涂层与输出镜一起构成谐振器。 为了制造晶体,使用作为原料的Er2O3,Y2O3和V2O5使用生长方向为a轴的高频感应加热炉进行切克劳斯基生长工艺。 然后在生长温度附近的温度或氧气氛中的热处理下进行热处理。 已经可以生产YVO4的单个激光晶体,其质量提高并且产量提高。
    • 56. 发明授权
    • Analog current output circuit
    • 模拟电流输出电路
    • US08810078B2
    • 2014-08-19
    • US13141203
    • 2008-12-26
    • Seiichi SaitoHirokazu NomotoYoshihiro Akeboshi
    • Seiichi SaitoHirokazu NomotoYoshihiro Akeboshi
    • H01H9/54
    • G05F1/56H02M3/28H02M2001/0032H02M2001/0045Y02B70/16Y10T307/944
    • In the analog current output circuit according to the present invention, a rising start position and a tilt of an internal control voltage are set such that it crosses, at the maximum of an analog output current, a load end voltage obtained when the resistance of a load is the one near the center of a specification range. According to a comparison result in a comparator, a switch causes a DC/DC converter to input a high reference voltage and causes an output transistor to output a high power supply voltage when the internal control voltage is smaller than the load end voltage and causes the DC/DC converter to input a low reference voltage and causes the output transistor to output a low power supply voltage when the internal control voltage is larger than the load end voltage.
    • 在根据本发明的模拟电流输出电路中,设置内部控制电压的上升起始位置和倾斜,使得它以模拟输出电流的最大值跨过当电流为 负载是接近规格范围中心的负载。 根据比较器的比较结果,当内部控制电压小于负载端电压时,开关使DC / DC转换器输入高参考电压并使输出晶体管输出高电源电压,并且使得 DC / DC转换器输入低参考电压,并且当内部控制电压大于负载端电压时,使输出晶体管输出低电源电压。
    • 59. 发明授权
    • Semiconductor device and data processor
    • 半导体器件和数据处理器
    • US08531893B2
    • 2013-09-10
    • US13674043
    • 2012-11-11
    • Yoshihiko HottaSeiichi SaitoHiroyuki HamasakiHirotaka HaraItaru Nonomura
    • Yoshihiko HottaSeiichi SaitoHiroyuki HamasakiHirotaka HaraItaru Nonomura
    • G11C7/10
    • G06F1/3253G06F1/3237Y02D10/128Y02D10/151
    • In a data processor having a bus controller that performs timing control of access from the CPU operated in synchronization with a high-speed first clock signal to a peripheral circuit operated in synchronization with a low-speed second clock signal, a timing control circuit is provided between the peripheral circuit and the bus controller, and the bus controller causes, in response to a read instruction from the peripheral circuit, the timing control circuit to output data held by the peripheral circuit to the bus controller in synchronization with the cycle of the high-speed clock signal, causes the timing control circuit to start, in response to a write instruction directed to the peripheral circuit, writing into the peripheral circuit in synchronization with the cycle of the high-speed clock signal, and terminates the writing in synchronization with the cycle of the low-speed clock signal.
    • 在具有总线控制器的数据处理器中,总线控制器执行与高速第一时钟信号同步操作的CPU的访问定时控制到与低速第二时钟信号同步操作的外围电路,提供定时控制电路 在外围电路和总线控制器之间,并且总线控制器响应于来自外围电路的读取指令而导致定时控制电路将周边电路保持的数据与高速的周期同步地传送到总线控制器 速度时钟信号,使定时控制电路响应于指向外围电路的写指令而启动,与高速时钟信号的周期同步地写入外围电路,并且与 低速时钟信号的周期。