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51. 发明授权

US4578125A Permanent magnet 失效
标题翻译：永久磁铁
公开(公告)号：US4578125A
公开(公告)日：1986-03-25
申请号：US392593
申请日：1982-06-28
申请人： Masashi Sahashi , Koichiro Inomata , Naoyuki Sori , Hideki Yamamiya
发明人： Masashi Sahashi , Koichiro Inomata , Naoyuki Sori , Hideki Yamamiya
IPC分类号： C22C19/07 , H01F1/055 , C04B35/00
CPC分类号： C22C19/07 , H01F1/0557
摘要： Disclosed is a comprising a powdered alloy composed of 23 to about 29% by weight of samarium, 0.2 to about 7% by weight of titanium, 3 to about 9% by weight of copper, 10 to about 25% by weight of iron, and the balance of cobalt principally; said powdered alloy being sintered to obtain a sintered body, followed by(a) annealing the sintered body at a cooling rate of not more than 5.degree. C./min from an annealing-initiating temperature of from 600.degree. to 900.degree. C., or(b) subjecting the sintered body to a multi-stepwise aging processing initiated from a higher temperature to a lower temperature within the temperature range of from 350.degree. to 900.degree. C.The magnet is excellent in all the magnetic properties such as residual magnetic flux density, coercive force and maximum energy product, and also excellent in antioxidation property.
摘要翻译：公开了一种粉末状合金，其包含23至29重量％的钐，0.2至约7重量％的钛，3至约9重量％的铜，10至约25重量％的铁以及钴的余量主要为所述粉末状合金被烧结以获得烧结体，然后（a）从600℃至900℃的退火起始温度以不超过5℃/分钟的冷却速率对烧结体进行退火，或（b）使烧结体在350〜900℃的温度范围内从较高的温度开始进行多步骤老化处理。该磁体具有优异的磁性能，例如残余磁性磁通密度，矫顽力和最大能量乘积，抗氧化性也优异。

52. 发明授权

US08085511B2 Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer 有权
标题翻译：具有电阻调节层和薄膜插入层的磁阻效应元件
公开(公告)号：US08085511B2
公开(公告)日：2011-12-27
申请号：US12236331
申请日：2008-09-23
申请人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
IPC分类号： G11B5/39 , H01L29/82
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).
摘要翻译：磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括具有磁性材料膜的磁性被钉扎层，该磁性材料膜的磁化方向基本上被固定在一个方向上;磁性层，具有响应于外部磁性的磁化方向变化的磁性材料膜以及位于所述被钉扎层和所述自由层之间的非磁性金属中间层。元件还包括电连接到磁阻效应膜的一对电极，以提供垂直于磁阻效应膜的膜平面的感测电流。被钉扎层和自由层中的至少一个可以包括薄膜插入层。非磁性金属中间层包括电阻调节层，其包含氧化物，氮化物和氟化物中的至少一种，薄膜插入层包括选自铁（Fe），钴（Co）和镍中的至少一种元素（Ni）。

53. 发明授权

US07897274B2 Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus 有权
标题翻译：磁阻器件，磁阻磁头和磁记录再现装置
公开(公告)号：US07897274B2
公开(公告)日：2011-03-01
申请号：US11685490
申请日：2007-03-13
申请人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译：磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括磁化钉扎层，非磁性中间层和无磁化层。磁化固定层和磁化自由层中的至少一个基本上由式FeaCobNic（其中a + b + c = 100原子％，a＆nlE; 75原子％，b＆nlE; 75在％，c＆nlE; 63at％），或由具有体心立方晶体结构的合金形成。

54. 发明授权

US07593195B2 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻效应元件，磁头，磁再现装置和磁存储器
公开(公告)号：US07593195B2
公开(公告)日：2009-09-22
申请号：US11609557
申请日：2006-12-12
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译：磁阻效应元件包括磁阻效应膜和一对电极。具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

55. 发明授权

US07561383B2 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system 失效
公开(公告)号：US07561383B2
公开(公告)日：2009-07-14
申请号：US12212162
申请日：2008-09-17
申请人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
发明人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3143 , G11B5/39 , G11B5/3903 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , Y10T428/1114
摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

56. 发明授权

US07511927B2 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再生装置
公开(公告)号：US07511927B2
公开(公告)日：2009-03-31
申请号：US11282659
申请日：2005-11-21
申请人： Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.
摘要翻译：用于垂直导电的自旋阀型磁阻效应元件包括一个磁阻效应膜，其中插入由含有不大于1022 / cm3的导电载体的材料制成的电阻调节层。因此，将自旋依赖导通变化的部分的电阻值提高到适当的值，从而增加电阻变化量。

57. 发明授权

US07463456B2 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再生装置
公开(公告)号：US07463456B2
公开(公告)日：2008-12-09
申请号：US11697885
申请日：2007-04-09
申请人： Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate valve, thereby to increase the resistance variable amount.
摘要翻译：用于垂直导电的自旋阀型磁阻效应元件包括一个磁阻效应膜，其中插入由含有不大于1022 / cm3的导电载体的材料制成的电阻调节层。因此，自旋导通的变化部分的电阻值上升到适当的阀，从而增加电阻变化量。

58. 发明授权

US07301733B1 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻效应元件，磁头，磁再现装置和磁存储器
公开(公告)号：US07301733B1
公开(公告)日：2007-11-27
申请号：US10400690
申请日：2003-03-28
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译：磁阻效应元件包括磁阻效应膜和一对电极。具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

59. 发明授权

US07218483B2 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再生装置
公开(公告)号：US07218483B2
公开(公告)日：2007-05-15
申请号：US10175960
申请日：2002-06-21
申请人： Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.
摘要翻译：用于垂直导电的自旋阀型磁阻效应元件包括磁阻效应膜，其中由含有导电载体的材料制成的电阻调节层不大于10/22/3 / >被插入。因此，将自旋依赖导通变化的部分的电阻值提高到适当的值，从而增加电阻变化量。

60. 发明授权

US07145754B2 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of oxygen 有权
标题翻译：具有具有氧的二维波动的非磁性中间层的磁阻效应元件
公开(公告)号：US07145754B2
公开(公告)日：2006-12-05
申请号：US11061635
申请日：2005-02-22
申请人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
发明人： Katsuhiko Koui , Masatoshi Yoshikawa , Masayuki Takagishi , Masashi Sahashi , Takeo Sakakubo , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01L27/224 , H01L27/228
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer, and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.
摘要翻译：磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁性钉扎层，其磁化方向基本上被固定在一个方向上，磁化方向随着外部磁场而变化的磁性层以及位于其间的非磁性中间层固定层和自由层，以及电连接到所述磁阻效应膜的一对电极，以提供垂直于所述磁阻效应膜的膜平面的感测电流。中间层具有包括电阻相对较高的第一区域和电阻相对较低的第二区域的第一层。当电流通过第一层时，感测电流优先流过第二区域。或者，第一层中的氧浓度可以具有二维波动，以及氧浓度等于或高于40原子％的第一区域和氧浓度等于或低于其的第二区域可以在第一层中设置35原子％以上。

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