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51. 发明申请

US20110169000A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20110169000A1
公开(公告)日：2011-07-14
申请号：US12904507
申请日：2010-10-14
申请人： JUNG-SUK BANG , Byeong-Hoon Cho , Sung-Hoon Yang , Suk-Won Jung , Ki-Hun Jeong
发明人： JUNG-SUK BANG , Byeong-Hoon Cho , Sung-Hoon Yang , Suk-Won Jung , Ki-Hun Jeong
IPC分类号： H01L33/16 , H01L33/00
CPC分类号： G02F1/136209 , G02F2001/13312 , G02F2203/11
摘要： A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.
摘要翻译：显示基板包括形成在基底基板上的第一遮光图案，第一开关元件，形成在基底基板上的第二遮光图案和第一感测元件。第一遮光图案被配置为阻挡可见光并透射红外光。第一开关元件包括第一半导体图案，第一源极电极，第一漏极电极和第一栅极电极。第二遮光图案被配置为阻挡可见光并透射红外光。第一感测元件被配置为检测红外光，并且包括第二半导体图案，第二源电极，第二漏电极和第二栅电极。

52. 发明申请

US20070096097A1 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND ELECTRO-LUMINESCENCE DISPLAY PANEL HAVING THE SAME 失效
标题翻译：薄膜晶体管，其制造方法，具有该膜的液晶显示面板和具有该膜的电致发光显示面板
公开(公告)号：US20070096097A1
公开(公告)日：2007-05-03
申请号：US11538394
申请日：2006-10-03
申请人： Byoung-June Kim , Sung-Hoon Yang , Min-Seok Oh , Jae-HO Choi , Yong-Mo Choi
发明人： Byoung-June Kim , Sung-Hoon Yang , Min-Seok Oh , Jae-HO Choi , Yong-Mo Choi
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L29/78669 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
摘要翻译： TFT包括栅电极，有源层，源电极，漏电极和缓冲层。栅电极形成在基板上; 在栅电极上形成有源层。形成在有源层上的源电极和漏电极分开预定的距离。缓冲层形成在有源层与源极和漏极之间。缓冲层具有对应于缓冲层厚度的基本连续变化的含量比。形成缓冲层以抑制有源层的氧化，并降低接触电阻。

53. 发明授权

US07964250B2 Flexible display device having enhanced thin film semiconductive layer and method of manufacture 有权
标题翻译：柔性显示装置具有增强的薄膜半导体层及其制造方法
公开(公告)号：US07964250B2
公开(公告)日：2011-06-21
申请号：US11677353
申请日：2007-02-21
申请人： Byoung-June Kim , Sung-Hoon Yang , Jae-Ho Choi
发明人： Byoung-June Kim , Sung-Hoon Yang , Jae-Ho Choi
IPC分类号： B05D3/00
CPC分类号： C23C16/24 , C23C16/56 , G02F1/133305 , G02F1/133345 , H01L27/1214 , H01L27/1262 , H01L27/127 , H01L29/78603
摘要： A manufacturing method for a flat panel display device includes forming a barrier layer on a flexible plastic substrate by RF sputtering, forming an amorphous silicon layer on the plastic substrate, and subjecting the amorphous silicon layer to a rapid heat treatment so as to thereby improve electrical characteristics and/or homogeneity of the amorphous silicon layer.
摘要翻译：平板显示装置的制造方法包括通过RF溅射在柔性塑料基板上形成阻挡层，在塑料基板上形成非晶硅层，对非晶硅层进行快速热处理，从而改善电气非晶硅层的特性和/或均匀性。

54. 发明申请

US20070196576A1 FLEXIBLE DISPLAY DEVICE HAVING ENHANCED THIN FILM SEMICONDUCTIVE LAYER AND METHOD OF MANUFACTURE 有权
标题翻译：具有增强薄膜的柔性显示装置半导体层及其制造方法
公开(公告)号：US20070196576A1
公开(公告)日：2007-08-23
申请号：US11677353
申请日：2007-02-21
申请人： Byoung-June KIM , Sung-Hoon Yang , Jae-Ho Choi
发明人： Byoung-June KIM , Sung-Hoon Yang , Jae-Ho Choi
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C23C16/56 , G02F1/133305 , G02F1/133345 , H01L27/1214 , H01L27/1262 , H01L27/127 , H01L29/78603
摘要： A manufacturing method for a flat panel display device includes forming a barrier layer on a flexible plastic substrate by RF sputtering, forming an amorphous silicon layer on the plastic substrate, and subjecting the amorphous silicon layer to a rapid heat treatment so as to thereby improve electrical characteristics and/or homogeneity of the amorphous silicon layer.
摘要翻译：平板显示装置的制造方法包括通过RF溅射在柔性塑料基板上形成阻挡层，在塑料基板上形成非晶硅层，对非晶硅层进行快速热处理，从而改善电气非晶硅层的特性和/或均匀性。

55. 发明授权

US08088653B2 Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same 有权
标题翻译：薄膜晶体管，其制造方法，具有该薄膜晶体管的液晶显示面板和具有该薄膜晶体管的电致发光显示面板
公开(公告)号：US08088653B2
公开(公告)日：2012-01-03
申请号：US12604318
申请日：2009-10-22
申请人： Byoung-June Kim , Sung-Hoon Yang , Min-Seok Oh , Jae-Ho Choi , Yong-Mo Choi
发明人： Byoung-June Kim , Sung-Hoon Yang , Min-Seok Oh , Jae-Ho Choi , Yong-Mo Choi
IPC分类号： H01L21/00
CPC分类号： H01L29/78669 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
摘要翻译： TFT包括栅电极，有源层，源电极，漏电极和缓冲层。栅电极形成在基板上; 在栅电极上形成有源层。形成在有源层上的源电极和漏电极分开预定的距离。缓冲层形成在有源层与源极和漏极之间。缓冲层具有对应于缓冲层厚度的基本连续变化的含量比。形成缓冲层以抑制有源层的氧化，并降低接触电阻。

56. 发明申请

US20100062574A1 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND ELECTRO-LUMINESCENCE DISPLAY PANEL HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法，具有该膜的液晶显示面板和具有该膜的电致发光显示面板
公开(公告)号：US20100062574A1
公开(公告)日：2010-03-11
申请号：US12604318
申请日：2009-10-22
申请人： Byoung-June KIM , Sung-Hoon Yang , Min-Seok Oh , Jae-Ho Choi , Yong-Mo Choi
发明人： Byoung-June KIM , Sung-Hoon Yang , Min-Seok Oh , Jae-Ho Choi , Yong-Mo Choi
IPC分类号： H01L21/336
CPC分类号： H01L29/78669 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
摘要翻译： TFT包括栅电极，有源层，源电极，漏电极和缓冲层。栅电极形成在基板上; 在栅电极上形成有源层。形成在有源层上的源电极和漏电极分开预定的距离。缓冲层形成在有源层与源极和漏极之间。缓冲层具有对应于缓冲层厚度的基本连续变化的含量比。形成缓冲层以抑制有源层的氧化，并降低接触电阻。

57. 发明授权

US07615867B2 Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same 失效
标题翻译：薄膜晶体管，其制造方法，具有该薄膜晶体管的液晶显示面板和具有该薄膜晶体管的电致发光显示面板
公开(公告)号：US07615867B2
公开(公告)日：2009-11-10
申请号：US11538394
申请日：2006-10-03
申请人： Byoung-June Kim , Sung-Hoon Yang , Min-Seok Oh , Jae-Ho Choi , Yong-Mo Choi
发明人： Byoung-June Kim , Sung-Hoon Yang , Min-Seok Oh , Jae-Ho Choi , Yong-Mo Choi
IPC分类号： H01L29/417 , H01L29/49
CPC分类号： H01L29/78669 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
摘要翻译： TFT包括栅电极，有源层，源电极，漏电极和缓冲层。栅电极形成在基板上; 在栅电极上形成有源层。形成在有源层上的源电极和漏电极分开预定的距离。缓冲层形成在有源层与源极和漏极之间。缓冲层具有对应于缓冲层厚度的基本连续变化的含量比。形成缓冲层以抑制有源层的氧化，并降低接触电阻。

58. 发明授权

US08058649B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08058649B2
公开(公告)日：2011-11-15
申请号：US12399774
申请日：2009-03-06
申请人： Sung-Hoon Kim , Kwan Hee Lee , Sung-Hoon Yang , Young-Hoon Yoo
发明人： Sung-Hoon Kim , Kwan Hee Lee , Sung-Hoon Yang , Young-Hoon Yoo
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/78696
摘要： In one embodiment, a thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, first and second electrodes and a protective layer. The semiconductor pattern is formed on the gate electrode, and includes a first semiconductor layer deposited at a first deposition speed and a second semiconductor layer deposited at a second deposition speed faster than the first deposition speed. The first and second electrodes are spaced apart from each other on the semiconductor pattern. The protective layer is formed on the semiconductor pattern to cover the first and second electrodes, and makes contact with a channel region of the first semiconductor layer to form an interface with the first semiconductor layer. Thus, electrical characteristics of the TFT may be improved.
摘要翻译：在一个实施例中，薄膜晶体管（TFT）包括栅电极，半导体图案，第一和第二电极以及保护层。半导体图案形成在栅电极上，并且包括以第一沉积速度沉积的第一半导体层和以比第一沉积速度快的第二沉积速度沉积的第二半导体层。第一和第二电极在半导体图案上彼此间隔开。保护层形成在半导体图案上以覆盖第一和第二电极，并与第一半导体层的沟道区域接触以形成与第一半导体层的界面。因此，可以提高TFT的电特性。

59. 发明授权

US07843518B2 LCD aperture ratios 有权
标题翻译： LCD开口率
公开(公告)号：US07843518B2
公开(公告)日：2010-11-30
申请号：US11975968
申请日：2007-10-22
申请人： Sung-Hoon Yang , So-Woon Kim , Chong-Chul Chai , Chang-Oh Jeong , Eun-Guk Lee , Je-Hun Lee
发明人： Sung-Hoon Yang , So-Woon Kim , Chong-Chul Chai , Chang-Oh Jeong , Eun-Guk Lee , Je-Hun Lee
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/136227 , G02F2201/40
摘要： A display substrate includes respective pluralities of gate lines, data lines, switching elements, storage lines, pixel electrodes, and an organic insulation layer. The gate lines and the data lines define a plurality of unit pixels. The storage lines are respectively formed adjacent to the respective drain electrodes of the respective switching elements of respective rows of the unit pixels. The organic insulation layer has a hole that is formed within the area of each of the unit pixels and that extends from a contact area formed at a portion of the corresponding drain electrode of the pixel to a portion corresponding to the storage line thereof. This arrangement enables the marginal area needed to prevent mismatch of the hole in the areas of the contact area and the storage line to be reduced, thereby increasing the aperture ratio of the display.
摘要翻译：显示基板包括多条栅极线，数据线，开关元件，存储线，像素电极和有机绝缘层。栅极线和数据线限定多个单位像素。存储线分别形成为与各行的单位像素的各个开关元件的各个漏电极相邻。有机绝缘层具有形成在每个单位像素的区域内的孔，并且从形成在像素的相应漏电极的一部分的接触区域延伸到对应于其存储线的部分。这种布置使得能够减小接触区域和存储线的区域中的孔的失配所需的边缘区域，从而增加显示器的开口率。

60. 发明授权

US07804569B2 Panel assembly having a common electrode comprising a plurality of domain dividing members overlapping gate lines and wherein the gate lines overlap a pixel electrode 有权
标题翻译：面板组件具有公共电极，其包括与栅极线重叠的多个畴分隔构件，并且其中栅极线与像素电极重叠
公开(公告)号：US07804569B2
公开(公告)日：2010-09-28
申请号：US11943400
申请日：2007-11-20
申请人： Ji-Won Sohn , Jin-Won Park , Seon-Ah Cho , Mee-Hye Jung , Sung-Hoon Yang
发明人： Ji-Won Sohn , Jin-Won Park , Seon-Ah Cho , Mee-Hye Jung , Sung-Hoon Yang
IPC分类号： G02F1/1343
CPC分类号： G02F1/134309 , G02F2001/134318
摘要： A panel assembly includes a gate wire, a data wire, a plurality of pixel electrodes, a liquid crystal layer, and a common electrode. The gate wire includes a plurality of gate lines and the data wire includes a plurality of data lines crossing and insulated from the gate lines. The pixel electrodes are insulated from each other and disposed on the data wire. The liquid crystal layer is disposed on the pixel electrodes and includes liquid crystal molecules, and a common electrode is disposed on the liquid crystal layer. The gate lines cross a center of the pixel electrodes, and the common electrode includes a plurality of cutting patterns that overlap the gate lines.
摘要翻译：面板组件包括栅极线，数据线，多个像素电极，液晶层和公共电极。栅极线包括多条栅极线，数据线包括与栅极线交叉并绝缘的多条数据线。像素电极彼此绝缘并设置在数据线上。液晶层设置在像素电极上并且包括液晶分子，并且公共电极设置在液晶层上。栅极线穿过像素电极的中心，并且公共电极包括与栅极线重叠的多个切割图案。

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