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51. 发明申请

US20100057968A1 MODULAR FLEXIBLE SOFTWARE ARCHITECTURE FOR TV 失效
标题翻译：用于电视的模块化柔性软件架构
公开(公告)号：US20100057968A1
公开(公告)日：2010-03-04
申请号：US12274702
申请日：2008-11-20
申请人： Thomas P. Dawson , Aixin Liu , Kai Liu , Andy Nguyen , Ling Jun Wong
发明人： Thomas P. Dawson , Aixin Liu , Kai Liu , Andy Nguyen , Ling Jun Wong
IPC分类号： H05K7/10
CPC分类号： H04N5/4401 , G06F8/65 , G06F9/44526 , H04N21/436 , H04N21/4431 , H04N21/4433
摘要： Rather than have a unique code set per TV product, a common code base is provided to service multiple products and even multiple product lines. Embedded systems can be upgraded through a network connection. The software architecture provides a flexible approach to supporting multiple product offerings through a plug-in modular middle-ware and to providing standardized hardware acceleration for both 2D and 3D graphics. The plug-in capability provides for feature additions and upgrades after sale.
摘要翻译：而不是每个电视产品都有一个唯一的代码集，而是提供一个通用的代码库来为多个产品甚至多个产品线提供服务。嵌入式系统可以通过网络连接进行升级。软件架构提供了一种灵活的方式，通过插件模块化中间件支持多种产品，并为2D和3D图形提供标准化的硬件加速。插件功能提供售后功能添加和升级。

52. 发明申请

US20100001268A1 Semiconductor Device and Method of Shunt Test Measurement for Passive Circuits 有权
标题翻译：半导体器件和无源电路并联测试测量方法
公开(公告)号：US20100001268A1
公开(公告)日：2010-01-07
申请号：US12167039
申请日：2008-07-02
申请人： Robert C. Frye , Kai Liu , Yaojian Lin
发明人： Robert C. Frye , Kai Liu , Yaojian Lin
IPC分类号： H01L23/58 , H01L21/02
CPC分类号： H01L22/34 , H01L23/64 , H01L28/10 , H01L28/40 , H01L2224/48091 , H01L2224/73265 , H01L2924/3011 , H01L2924/00014
摘要： A semiconductor device has an inductor and capacitor formed on the substrate. The inductor and capacitor are electrically connected in series. The inductor is a coiled conductive layer. The capacitor has first and second conductive layers separated by an insulating layer. A first test pad and second test pad are formed on the substrate. A terminal of the inductor is coupled to the first and second test pads. A third test pad and fourth test pad are formed on the substrate. A terminal of the capacitor is coupled to the third and fourth test pads such that the inductor and capacitor are connected in shunt between the first and second test pads and the third and fourth test pads. An electrical characteristic of the inductor and capacitor such that resonant frequency and quality factor are tested using a two-port shunt measurement which negates series resistance of test probes.
摘要翻译：半导体器件具有形成在衬底上的电感器和电容器。电感器和电容器串联电连接。电感器是线圈导电层。该电容器具有被绝缘层隔开的第一和第二导电层。在基板上形成第一测试焊盘和第二测试焊盘。电感器的端子耦合到第一和第二测试焊盘。在基板上形成第三测试焊盘和第四测试焊盘。电容器的端子耦合到第三和第四测试焊盘，使得电感器和电容器在第一和第二测试焊盘与第三和第四测试焊盘之间分流连接。电感器和电容器的电气特性使得谐振频率和品质因数使用双端口分流测量进行测试，这样可以消除测试探针的串联电阻。

53. 发明申请

US20100000990A1 Carbon nanotube heater 审中-公开
标题翻译：碳纳米管加热器
公开(公告)号：US20100000990A1
公开(公告)日：2010-01-07
申请号：US12460870
申请日：2009-07-23
申请人： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
发明人： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H05B3/03 , H05B3/10
CPC分类号： H05B3/145 , H05B3/265 , H05B3/28 , H05B3/34 , H05B2203/005 , H05B2203/007 , H05B2203/011 , H05B2203/013 , H05B2203/014 , H05B2203/017 , H05B2203/032 , H05B2214/04 , Y10T29/49208 , Y10T156/10 , Y10T156/1002
摘要： An apparatus includes a hollow heater. The hollow heater has a hollow supporter, a heating element and at least two electrodes. The at least two electrodes are separately and electrically connected to the heating element. The hollow supporter defines a hollow space, the hollow supporter has an inner surface and an outer surface. The heating element disposed on one of the surfaces of the hollow supporter. The heating element includes a carbon nanotube film. The carbon nanotube film is made of a plurality of carbon nanotubes entangled with each other.
摘要翻译：一种装置包括中空加热器。中空加热器具有中空的支撑件，加热元件和至少两个电极。所述至少两个电极分别电连接到所述加热元件。中空支撑件限定中空空间，中空支撑件具有内表面和外表面。加热元件设置在中空支撑体的一个表面上。加热元件包括碳纳米管膜。碳纳米管膜由多个彼此缠结的碳纳米管制成。

54. 发明申请

US20100000669A1 Carbon nanotube heater 审中-公开
标题翻译：碳纳米管加热器
公开(公告)号：US20100000669A1
公开(公告)日：2010-01-07
申请号：US12462153
申请日：2009-07-30
申请人： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
发明人： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： B29D31/00 , H01C17/06
CPC分类号： H01C17/06 , H01C17/28 , H05B3/145 , H05B2203/005 , H05B2203/007 , H05B2203/011 , H05B2203/013 , H05B2203/014 , H05B2203/017 , H05B2203/032 , Y10T29/49083
摘要： A method for making a hollow heater is provided. The method includes providing a hollow supporter and, the hollow supporter defines a hollow space. A carbon nanotube structure is made and then fixed on a surface of the hollow supporter. A first electrode and a second electrode is provided and electrically connected to the carbon nanotube structure.
摘要翻译：提供一种制造中空加热器的方法。该方法包括提供中空支撑件，并且中空支撑件限定中空空间。制作碳纳米管结构，然后固定在中空支撑体的表面上。提供第一电极和第二电极并电连接到碳纳米管结构。

55. 发明申请

US20090321420A1 Carbon nanotube heater 审中-公开
标题翻译：碳纳米管加热器
公开(公告)号：US20090321420A1
公开(公告)日：2009-12-31
申请号：US12460854
申请日：2009-07-23
申请人： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
发明人： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H05B3/03 , H05B3/10
CPC分类号： H05B3/145 , H05B3/265 , H05B3/28 , H05B3/34 , H05B2203/005 , H05B2203/007 , H05B2203/011 , H05B2203/013 , H05B2203/014 , H05B2203/017 , H05B2203/032 , H05B2214/04 , Y10T29/49208 , Y10T156/10 , Y10T156/1002
摘要： An apparatus includes a hollow heater. The hollow heater includes a hollow supporter, a heating element and at least two electrodes. The hollow supporter has an inner surface and an outer surface. The heating element is attached on one of the inner and the outer surfaces of the hollow supporter. The heat element comprises of a carbon nanotube film comprising of carbon nanotubes arranged along a same direction. The at least two electrodes are electrically connected to the heating element.
摘要翻译：一种装置包括中空加热器。中空加热器包括中空支撑件，加热元件和至少两个电极。中空支撑件具有内表面和外表面。加热元件安装在中空支撑件的内表面和外表面之一上。加热元件由沿同一方向排列的碳纳米管构成的碳纳米管膜构成。至少两个电极电连接到加热元件。

56. 发明授权

US07622796B2 Semiconductor package having a bridged plate interconnection 有权
标题翻译：具有桥接板互连的半导体封装
公开(公告)号：US07622796B2
公开(公告)日：2009-11-24
申请号：US11906136
申请日：2007-09-28
申请人： Lei Shi , Ming Sun , Kai Liu
发明人： Lei Shi , Ming Sun , Kai Liu
IPC分类号： H01L23/02
CPC分类号： H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, and a semiconductor die coupled to the leadframe, the semiconductor die having a plurality of metalized source contacts. A bridged source plate interconnection has a bridge portion, valley portions disposed on either side of the bridge portion, plane portions disposed on either side of the valley portions and the bridge portion, and a connection portion depending from one of the plane portions, the bridged source plate interconnection connecting the source lead with the plurality of metalized source contacts. The bridge portion is disposed in a plane above the plane of the valley portions while the plane portions are disposed in a plane intermediate the plane of the bridge portion and the plane of the valley portions.
摘要翻译：公开了半导体封装。封装包括具有漏极，源极和栅极引线的引线框架以及耦合到引线框架的半导体管芯，该半导体管芯具有多个金属化源极触点。桥接源极板互连具有桥接部分，设置在桥接部分的任一侧上的谷部分，设置在谷部分和桥接部分两侧的平面部分以及从平面部分之一悬挂的连接部分，将源极引线与多个金属化源触点连接的源极板互连。桥面部分设置在平坦部分的平面上方的平面中，而平面部分设置在桥接部分的平面和谷部的平面之间的平面中。

57. 发明申请

US20090272490A1 METHOD FOR MANUFACTURING CARBON NANOTUBES 有权
标题翻译：制备碳纳米管的方法
公开(公告)号：US20090272490A1
公开(公告)日：2009-11-05
申请号：US11484396
申请日：2006-07-11
申请人： Kai Liu , Kai-Li Jiang , Shou-Shan Fan
发明人： Kai Liu , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： D01F9/12 , B29C65/00
CPC分类号： B82Y40/00 , B01J23/74 , B01J37/0215 , B82Y30/00 , C01B32/162 , Y10T156/1089
摘要： A method for manufacturing open-ended carbon nanotubes is described. The method includes steps of: providing a substrate having a catalyst layer formed thereon; placing the substrate in a reaction chamber; introducing a carbon source gas containing carbon element into the reaction chamber for growing carbon nanotubes form the catalyst layer; promptly reducing a concentration of the carbon source gas when the growth of carbon nanotubes in process, thereby ceasing the growth of the carbon nanotubes instantly; and separating the carbon nanotubes from the catalyst layer.
摘要翻译：描述了制造开放式碳纳米管的方法。该方法包括以下步骤：提供其上形成有催化剂层的基板; 将基板放置在反应室中; 将碳元素的碳源气体引入用于生长碳纳米管的反应室中形成催化剂层; 在碳纳米管生长过程中迅速降低碳源气体的浓度，从而立即停止碳纳米管的生长; 并从催化剂层分离碳纳米管。

58. 发明授权

US07606184B2 Multiplexers employing bandpass-filter architectures 有权
标题翻译：采用带通滤波器架构的多路复用器
公开(公告)号：US07606184B2
公开(公告)日：2009-10-20
申请号：US11029664
申请日：2005-01-04
申请人： Kai Liu , Richard Kommrusch
发明人： Kai Liu , Richard Kommrusch
IPC分类号： H04L5/00
CPC分类号： H03H7/463 , H03H2001/0085
摘要： A multiplexer, such as a diplexer, is delineated. The multiplexer may be employed in a communications system that may communicate in multiple frequency bands within a predefined range of frequencies, e.g., 2400 MHz-4900 MHz. The communications system may operate in a network, such as a wireless local area network, without significant interference from signals used by a cellular/mobile telephone system. The multiplexer may include multiple channels with bandpass filters that may be formed with lumped inductors and lumped capacitors. In at least one of the channels, the bandpass filter may be formed by combining at least one lowpass filter with at least one highpass filter.
摘要翻译：已经描述了诸如双工器之类的多路复用器。多路复用器可以用在可以在预定范围的频率（例如2400MHz-4900MHz）内在多个频带中通信的通信系统中。通信系统可以在诸如无线局域网的网络中操作，而不会由蜂窝/移动电话系统使用的信号的显着干扰。多路复用器可以包括具有带通滤波器的多个通道，其可以形成有集总电感器和集总电容器。在至少一个通道中，可以通过将至少一个低通滤波器与至少一个高通滤波器组合来形成带通滤波器。

59. 发明申请

US20090197082A1 Individually coated carbon nanotube wire-like structure related applications 审中-公开
标题翻译：单独涂覆碳纳米管线状结构相关应用
公开(公告)号：US20090197082A1
公开(公告)日：2009-08-06
申请号：US12321568
申请日：2009-01-22
申请人： Kai-Li Jiang , Liang Liu , Kai Liu , Qing-Yu Zhao , Yong-Chao Zhai , Shou-Shan Fan
发明人： Kai-Li Jiang , Liang Liu , Kai Liu , Qing-Yu Zhao , Yong-Chao Zhai , Shou-Shan Fan
IPC分类号： H01B1/04 , B32B15/04
CPC分类号： H01B13/0026 , H01B1/04 , H01B1/24 , Y10T428/2918
摘要： A individually coated carbon nanotube wire-like structure includes an amount of carbon nanotubes and a conductive coating on an outside surface of the carbon nanotubes. The carbon nanotubes are joined end-to-end by van der Waals attractive force therebetween.
摘要翻译：单独涂覆的碳纳米管线状结构包括一定量的碳纳米管和在碳纳米管的外表面上的导电涂层。碳纳米管之间以范德华力吸引力端对端连接。

60. 发明申请

US20090108456A1 Solder-top Enhanced Semiconductor Device and Method for Low Parasitic Impedance Packaging 有权
标题翻译：焊接增强型半导体器件和低寄生阻抗封装方法
公开(公告)号：US20090108456A1
公开(公告)日：2009-04-30
申请号：US11932845
申请日：2007-10-31
申请人： Francois Hebert , Anup Bhalla , Kai Liu , Ming Sun
发明人： Francois Hebert , Anup Bhalla , Kai Liu , Ming Sun
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/40 , H01L23/4952 , H01L23/49562 , H01L23/64 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/05624 , H01L2224/29101 , H01L2224/29111 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/4103 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/83194 , H01L2224/83801 , H01L2224/84801 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01067 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/157 , H01L2924/181 , H01L2924/19043 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/37099
摘要： A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes: a) Lithographically patterning the top metal layer into the contact zones and the contact enhancement zones. b) Forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.
摘要翻译：提出了一种焊顶增强型半导体器件进行封装。焊料顶部器件包括具有图案化为接触区域和接触增强区域的顶部金属层的器件裸片。至少一个接触区域电连接到至少一个接触增强区域。每个接触增强区顶部都是一个焊料层，用于增加复合材料厚度，从而降低寄生阻抗。在顶部金属材料不能与焊料材料形成均匀的良好电接合的情况下，器件裸片还包括夹在中间层之间并与顶部金属层和焊料层形成均匀的电接合的中间层。用于制造焊料顶部器件的方法包括：a）将顶部金属层的光刻图案化成接触区域和接触增强区域。 b）使用用于增加复合材料厚度的模版工艺在每个接触增强区的顶部上形成焊料层。

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