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    • 54. 发明申请
    • SEMICONDUCTOR DEVICE HAVING DIFFUSION LAYERS AS BIT LINES AND METHOD FOR MANUFACTURING THE SAME
    • 具有扩展层作为位线的半导体器件及其制造方法
    • US20090104765A1
    • 2009-04-23
    • US12337023
    • 2008-12-17
    • Nobuyoshi TAKAHASHIFumihiko NoroKenji Sato
    • Nobuyoshi TAKAHASHIFumihiko NoroKenji Sato
    • H01L21/768
    • H01L27/11568H01L27/115
    • A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.
    • 半导体器件包括:半导体区域; 多个位线扩散层,其形成在所述半导体区域的上部,并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线,各自在列方向上形成在半导体区域上,并且与字线绝缘膜和栅极绝缘膜交叉。 存储单元形成在栅极绝缘膜和字线的交点处。 包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部,并且连接部分的上表面的电平低于连接扩散部的上表面的高度 半导体区域中的层。
    • 57. 发明授权
    • Vehicle deck structure
    • 车辆甲板结构
    • US07490892B2
    • 2009-02-17
    • US12149711
    • 2008-05-07
    • Kenji Sato
    • Kenji Sato
    • B62D21/03
    • B62D25/2054
    • A vehicle deck structure that can suppress deformation of a deck floor is provided. The vehicle deck structure includes a deck floor extending in a vehicle body front-rear direction and a vehicle width direction, a cross member having a longitudinal direction that corresponds to the vehicle width direction and provided at a lower side of the deck floor, a mount lower surface reinforcement that closes off a downward open end of the cross member to form a closed cross-section portion Sc, a collar that is provided within the closed cross-section portion Sc and supports a fastening load for fastening the deck floor to a chassis frame F, and a rear cross reinforcement that is provided at a front side or a rear side in the vehicle body front-rear direction with respect to an installation portion of the collar at the deck floor. The rear cross reinforcement includes an upper wall joined with the deck floor, a lower wall fixed at a front flange of the mount lower surface reinforcement, and an upright wall connecting the upper wall and the lower wall.
    • 提供了能够抑制甲板地板的变形的车辆甲板结构。 车辆甲板结构包括在车体前后方向和车宽方向上延伸的甲板楼板,具有与车宽方向对应的纵向方向并设置在甲板楼板的下侧的横梁,安装件 下表面加强件,其封闭横向构件的向下开口端,以形成封闭的横截面部分Sc,该套环设置在封闭的横截面部分Sc内,并支撑用于将甲板底板紧固到底盘的紧固载荷 框架F和相对于甲板底板上的轴环的安装部分设置在车身前后方向的前侧或后侧的后横梁加强件。 后横梁加强件包括与甲板底板连接的上壁,固定在安装下表面加强件的前凸缘处的下壁和连接上壁和下壁的直立壁。
    • 58. 发明授权
    • Semiconductor device having diffusion layers as bit lines and method for manufacturing the same
    • 具有作为位线的扩散层的半导体器件及其制造方法
    • US07476943B2
    • 2009-01-13
    • US11405451
    • 2006-04-18
    • Nobuyoshi TakahashiFumihiko NoroKenji Sato
    • Nobuyoshi TakahashiFumihiko NoroKenji Sato
    • H01L29/76
    • H01L27/11568H01L27/115
    • A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.
    • 半导体器件包括:半导体区域; 多个位线扩散层,其形成在所述半导体区域的上部,并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线,各自在列方向上形成在半导体区域上,并且与字线绝缘膜和栅极绝缘膜交叉。 存储单元形成在栅极绝缘膜和字线的交点处。 包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部,并且连接部分的上表面的电平低于连接扩散部的上表面的高度 半导体区域中的层。
    • 59. 发明申请
    • Vehicle deck structure
    • 车辆甲板结构
    • US20080277971A1
    • 2008-11-13
    • US12149715
    • 2008-05-07
    • Kenji Sato
    • Kenji Sato
    • B62D33/02
    • B62D21/03B62D25/2054
    • A vehicle deck structure that can suppress deformation of a deck floor is provided. The vehicle deck structure includes a deck floor that extends in a vehicle body front-rear direction and a vehicle width direction, a cross member disposed at a lower side of the deck floor and whose longitudinal direction corresponds to the vehicle width direction, and a top plate as a reinforcing member interposed between the deck floor and the cross member. The top plate has a plurality of ridges, whose longitudinal directions each correspond to the vehicle body front-rear direction, and which are arranged in parallel in a vehicle width direction, and these ridges overhang at both sides in the vehicle front-rear direction with respect to the cross member.
    • 提供了能够抑制甲板地板的变形的车辆甲板结构。 车辆甲板结构包括在车身前后方向和车宽方向上延伸的甲板地板,设置在甲板地板的下侧并且其纵向方向对应于车辆宽度方向的横梁,以及顶部 板作为插入在甲板底板和横梁之间的加强构件。 顶板具有多个脊部,其长度方向各自对应于车体前后方向,并且在车辆宽度方向上平行布置,并且这些脊部在车辆前后方向上两侧悬伸, 尊重十字架成员。