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51. 发明授权

US07384860B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07384860B2
公开(公告)日：2008-06-10
申请号：US10941000
申请日：2004-09-15
申请人： Osamu Nakamura , Manabu Katsumura , Shunpei Yamazaki
发明人： Osamu Nakamura , Manabu Katsumura , Shunpei Yamazaki
IPC分类号： H01L21/36 , H01L21/20 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/2022 , H01L21/3226 , H01L27/1277 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-Si film to the heat treatment to carry out gettering therefor, the device is performed for the shape of the island-like insulating film on the poly-Si film which is employed when implanting phosphorus. Thereby, the area of the boundary surface between the region to which phosphorus has been added and the region to which no phosphorus has been added is increased to enhance gettering efficiency.
摘要翻译：本发明涉及一种制造具有优异吸气效果的半导体器件的方法。在这种方法中，当通过添加金属将已经结晶的多晶硅膜加入磷中时，为了进行吸热而使得到的多晶硅膜进行热处理，对于在植入磷时使用的多晶硅膜上的岛状绝缘膜的形状。由此，增加了添加了磷的区域与没有添加磷的区域之间的边界面的面积，以提高吸气效率。

52. 发明授权

US07314785B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07314785B2
公开(公告)日：2008-01-01
申请号：US10968240
申请日：2004-10-20
申请人： Shunpei Yamazaki , Osamu Nakamura , Aki Yamamiti , Naoto Yamade
发明人： Shunpei Yamazaki , Osamu Nakamura , Aki Yamamiti , Naoto Yamade
IPC分类号： H01L21/336 , H01L21/00 , H01L21/84
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3272 , H01L51/5206 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L2251/5323 , H01L2251/552
摘要： A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.
摘要翻译：一种可靠性提高的显示装置及其制造方法，其产率提高。根据本发明的显示装置包括显示区域，包括第一电极，覆盖第一电极的边缘的绝缘层，形成在第一电极上的含有机化合物的层和第二电极。第一电极和绝缘层掺杂有一种导电性的杂质元素。

53. 发明申请

US20070099440A1 Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus 有权
标题翻译：半导体器件，半导体器件和激光照射设备的制造方法
公开(公告)号：US20070099440A1
公开(公告)日：2007-05-03
申请号：US11637914
申请日：2006-12-13
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C30B1/023 , C30B1/08 , C30B29/06 , H01L21/02683 , H01L21/2026
摘要： [Object]It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method. [Solution]A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀的同时，均匀地结晶半导体膜。本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件方法。 [解决方案]一种半导体器件的制造方法，其特征在于，包括以下步骤：通过离子掺杂法将形成在绝缘表面上的半导体膜添加第一稀有气体，并将其中添加有激光的第一稀土气体照射到半导体膜第二惰性气体的气氛，其中当照射激光时，将第一稀有气体施加到半导体膜上。

54. 发明申请

US20060237397A1 Method for manufacturing semiconductor device and laser irradiation apparatus 有权
标题翻译：半导体装置及激光照射装置的制造方法
公开(公告)号：US20060237397A1
公开(公告)日：2006-10-26
申请号：US11471494
申请日：2006-06-21
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L21/36 , B23K26/00
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光来有效地防止氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

55. 发明授权

US07067403B2 Method for manufacturing a semiconductor device that includes adding noble gas to a semiconductor film and then irradiating the semiconductor film with laser light in the presence of a magnetic field 失效
公开(公告)号：US07067403B2
公开(公告)日：2006-06-27
申请号：US10700516
申请日：2003-11-05
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L21/36
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

56. 发明授权

US07842589B2 Laser irradiation apparatus with means for applying magnetic field 有权
标题翻译：具有施加磁场的装置的激光照射装置
公开(公告)号：US07842589B2
公开(公告)日：2010-11-30
申请号：US12627242
申请日：2009-11-30
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L21/428 , B23K26/12
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

57. 发明授权

US07585783B2 Drop discharge apparatus, method for forming pattern and method for manufacturing semiconductor device 有权
标题翻译：放电装置，形成图案的方法和制造半导体器件的方法
公开(公告)号：US07585783B2
公开(公告)日：2009-09-08
申请号：US10827710
申请日：2004-04-20
申请人： Osamu Nakamura , Shunpei Yamazaki
发明人： Osamu Nakamura , Shunpei Yamazaki
IPC分类号： H01L21/31
CPC分类号： H01L21/76877 , H01L21/288 , H01L21/76838 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/66765
摘要： In this invention, it provides a method for forming a pattern, which is capable of improving position control after a drop, which was discharged from a drop discharge apparatus, was landed on a substrate. In addition, it provides a drop discharge apparatus which is capable of improving drop position accuracy after it was landed. Further, it provides a method for manufacturing a semiconductor device which uses the drop discharge apparatus of this invention.This invention is characterized in that a drop which was discharged from a discharge part, or a substrate on which a drop is landed, is irradiated with a laser beam, and a landing position of a drop is controlled. By this invention, it is possible to form a pattern, without using a photolithography process.
摘要翻译：在本发明中，提供了一种用于形成图案的方法，该图案能够改善从液滴排出装置排出的液滴之后的位置控制落在基板上。另外，它提供了一种能够降低降落位置精度后降落放电装置。此外，本发明提供了使用本发明的液滴放电装置的半导体装置的制造方法。本发明的特征在于，从喷射部排出的液滴或者液滴落下的基板被照射激光束，并且控制液滴的着落位置。通过本发明，可以在不使用光刻工艺的情况下形成图案。

58. 发明授权

US07316947B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07316947B2
公开(公告)日：2008-01-08
申请号：US10072931
申请日：2002-02-12
申请人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/78621 , H01L29/78624 , H01L29/78675 , H01L29/78678
摘要： An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing a noble (rare) gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.
摘要翻译：目的是减少高温（等于或高于600℃）的热处理工艺步骤，达到较低的温度（等于或小于600℃）的工艺，并简化工艺步骤并增加在制造半导体器件的方法中的吞吐量。通过本发明，在具有结晶结构的第一半导体膜上形成有阻挡层，第二半导体膜和含有贵重（稀有）气体元素的第三半导体膜。进行吸气，并且包含在第一半导体膜中的金属元素通过热处理工艺通过阻挡层和第二半导体膜，并移动到第三半导体膜。然后去除第二半导体膜和第三半导体膜，其中阻挡层用作蚀刻停止层。

59. 发明授权

US07141822B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07141822B2
公开(公告)日：2006-11-28
申请号：US10066542
申请日：2002-02-05
申请人： Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Shunpei Yamazaki , Hideaki Kuwabara
发明人： Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78621 , Y10S257/913
摘要： The TFT electric characteristic is ready to be influenced by the channel region in the neighborhood of an interface between a semiconductor and a gate insulating film. The present invention provides TFTs reduced in electric characteristic deviations and a method for manufacturing the same. The invention forms a region or layer containing an inactive element, or rear gas element, in the channel region. As shown in FIG. 1, a rear gas element is contained at least in an upper layer of the channel region.
摘要翻译： TFT电气特性准备好受到半导体和栅极绝缘膜之间的界面附近的沟道区的影响。本发明提供了减少电特性偏差的TFT及其制造方法。本发明在通道区域中形成含有非活性元件或后气体元件的区域或层。如图所示。如图1所示，后气体元件至少包含在通道区域的上层中。

60. 发明授权

US07033871B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07033871B2
公开(公告)日：2006-04-25
申请号：US11061780
申请日：2005-02-22
申请人： Osamu Nakamura , Shunpei Yamazaki , Koji Dairiki , Masayuki Kajiwara , Junichi Koezuka , Satoshi Murakami
发明人： Osamu Nakamura , Shunpei Yamazaki , Koji Dairiki , Masayuki Kajiwara , Junichi Koezuka , Satoshi Murakami
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L21/3226 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78633 , H01L29/78645 , H01L29/78675
摘要： According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H2, O, O2, and P are added, are formed in a semiconductor film having a crystalline structure, using a mask, and gettering for segregating a metal element contained in the semiconductor film to the impurity region by heat treatment. Thereafter, pattering is conducted using the mask, whereby a semiconductor layer made of the semiconductor film having a crystalline structure is formed.
摘要翻译：根据本发明，将稀有气体元素（也称为稀有气体）和选自H，H 2 O 2的一种或多种元素的杂质区域，，O，O 2 +和P添加时，使用掩模形成在具有晶体结构的半导体膜中，并且通过使用掩模将包含在半导体膜中的金属元素分离到杂质区域的吸杂热处理。此后，使用掩模进行图案化，由此形成由具有晶体结构的半导体膜制成的半导体层。

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