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51. 发明授权

US07413843B2 Sulfonamide compound, polymer compound, resist material and pattern formation method 有权
标题翻译：磺酰胺化合物，高分子化合物，抗蚀剂材料和图案形成方法
公开(公告)号：US07413843B2
公开(公告)日：2008-08-19
申请号：US11641654
申请日：2006-12-20
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03F7/004
CPC分类号： C08F220/18 , C08F212/02 , C08F228/02 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/111
摘要： A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
摘要翻译：抗蚀剂材料的基础聚合物包括由以下化学式3的通式表示的单元：其中R 1，R 2和R 3， SUP>相同或不同，为氢原子，氟原子，直链烷基，支链或环状烷基或碳数不少于1的氟化烷基; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同，为氢原子，直链烷基，支链或环状烷基，氟化烷基与碳数为1以上且20以下，或被酸释放的保护基。

52. 发明授权

US07378216B2 Resist material and pattern formation method 有权
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US07378216B2
公开(公告)日：2008-05-27
申请号：US11128438
申请日：2005-05-13
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： C08F12/30 , G03F7/00 , G03F7/004
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0397
摘要： A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2: wherein R1, R2, R3, R7, and R8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.
摘要翻译：抗蚀剂材料具有含有包含由以下化学式1的通式表示的第一单元与由下列化学式2的通式表示的第二单元的共聚物的化合物的基础聚合物：其中R 1 R 2，R 3，R 7，R 7和R 8相同或不同碳原子数为1以上且20以下的氢原子，氟原子或直链烷基，支链或环状烷基或氟化烷基， R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5和R 6相同或不同，为氢原子，直链烷基，支链或环状烷基或氟化烷基，其中具有碳数不小于1，不大于20，或由酸释放的保护基; R 9为碳原子数为1以上且20以下的氟原子，直链烷基，支链状或环状烷基或氟化烷基。

53. 发明授权

US07169530B2 Polymer compound, resist material and pattern formation method 有权
公开(公告)号：US07169530B2
公开(公告)日：2007-01-30
申请号：US10954374
申请日：2004-10-01
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03C1/73 , G03F7/039 , G03F7/20 , G03F7/30 , C08F226/02
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/146 , Y10S430/167
摘要： The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or —SO2—; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, —OR13, CO2R13, —R2—OR13 or —R12—CO2R13, at least one of R8, R9, R10 and R11 including —OR13, —CO2R13, —R12—OR13 or —R12—CO2R13 (wherein R 2 is a straight-chain alkylene group, a branched or cyclic alkylene group or a fluoridated alkylene group with a carbon number not less than 1 and not more than 20 and R13 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid); 0

54. 发明申请

US20050186501A1 Polymer compound, resist material and pattern formation method 有权
公开(公告)号：US20050186501A1
公开(公告)日：2005-08-25
申请号：US10954374
申请日：2004-10-01
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： C08F28/04 , C08G75/30 , G03C1/76 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/146 , Y10S430/167
摘要： The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or -SO2-; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, -0R13, CO2R13, -R2-OR13 or -R12-CO2R13, at least one of R8, R9, R10 and R11 including -OR13, -CO2R13, -R12-OR13 or -R12-CO2R13 (wherein R 2 is a straight-chain alkylene group, a branched or cyclic alkylene group or a fluoridated alkylene group with a carbon number not less than 1 and not more than 20 and R13 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid); 0

55. 发明授权

US06645694B2 Pattern formation material and pattern formation method 有权
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06645694B2
公开(公告)日：2003-11-11
申请号：US09922638
申请日：2001-08-07
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0392 , Y10S430/106
摘要： A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
摘要翻译：本发明的图案形成材料包含含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物和酸产生剂：其中R 1和R 2相同或不同，选自烷基，氯原子和包含氯原子的烷基; R 3，R 4，R 5和R 6是氢原子或氟原子，其中至少一个是氟原子; R 7是被酸释放的保护基。

56. 发明授权

US07588876B2 Resist material and pattern formation method 失效
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US07588876B2
公开(公告)日：2009-09-15
申请号：US11128441
申请日：2005-05-13
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03F7/004 , C08F12/30
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108
摘要： A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.
摘要翻译：抗蚀剂材料包括含有具有由以下化学式1的通式表示的单元的化合物的基础聚合物：其中R 1，R 2和R 3相同或不同，为氢原子，氟原子，直链烷基，支链或环状烷基或碳数不小于1且不大于20的氟化烷基; R4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R5为氢原子，直链烷基，支链或环状烷基或碳数为1以上20以下的氟化烷基或被酸释放的保护基; R6为具有环状酯化合物的基团，具有羟基的脂环族化合物的基团或具有包含六氟异丙醇的化合物的基团。

57. 发明申请

US20050266338A1 Resist material and pattern formation method 失效
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US20050266338A1
公开(公告)日：2005-12-01
申请号：US11128441
申请日：2005-05-13
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Mitsuru Ueda , Hirokazu Imori , Toshiaki Fukuhara
IPC分类号： G03F7/004 , G03F7/039 , G03C1/492
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108
摘要： A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.
摘要翻译：抗蚀剂材料包括含有具有由以下化学式1的通式表示的单元的化合物的基础聚合物：其中R 1，R 2和R 2， 3个相同或不同，为氢原子，氟原子，直链烷基，支链或环状烷基或碳数不小于1且不大于1的氟化烷基 20; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5是氢原子，直链烷基，支链或环状烷基或碳数不少于1的氟化烷基或保护基由酸释放; R 6是具有环状酯化合物的基团，具有羟基的脂环式化合物的基团或具有包含六氟异丙醇的化合物的基团。

58. 发明授权

US06511786B2 Pattern formation material and pattern formation method 有权
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06511786B2
公开(公告)日：2003-01-28
申请号：US09924093
申请日：2001-08-08
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/108
摘要： A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
摘要翻译：本发明的图案形成材料包含含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物和酸产生剂：其中R1和R2相同或不同并选自烷基，氯原子和含有氯原子的烷基; R3，R4，R5和R6是氢原子或氟原子，其中至少一个是氟原子; 而R7是由酸释放的保护基。

59. 发明申请

US20080193882A1 PATTERN FORMATION METHOD 有权
标题翻译：模式形成方法
公开(公告)号：US20080193882A1
公开(公告)日：2008-08-14
申请号：US11958661
申请日：2007-12-18
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/2041
摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
摘要翻译：在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

60. 发明授权

US07338743B2 Resist material and pattern formation method 有权
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US07338743B2
公开(公告)日：2008-03-04
申请号：US11197296
申请日：2005-08-05
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.
摘要翻译：抗蚀剂材料包括第一聚合物，其中碱溶性基团的一部分被酸酸化的酸不稳定基团保护; 其中基本上所有的碱溶性基团都被被酸化的酸不稳定基团保护的第二聚合物; 和酸发生剂。

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