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51. 发明授权

US06936529B2 Method for fabricating gate-electrode of semiconductor device with use of hard mask 失效
标题翻译：使用硬掩模制造半导体器件栅电极的方法
公开(公告)号：US06936529B2
公开(公告)日：2005-08-30
申请号：US10725320
申请日：2003-12-02
申请人： Kwan-Yong Lim , Heung-Jae Cho , Jung-Ho Lee , Se-Aug Jang , Yong-Soo Kim , Byung-Seop Hong , Jae-Geun Oh , Hong-Seon Yang , Hyun-Chul Sohn
发明人： Kwan-Yong Lim , Heung-Jae Cho , Jung-Ho Lee , Se-Aug Jang , Yong-Soo Kim , Byung-Seop Hong , Jae-Geun Oh , Hong-Seon Yang , Hyun-Chul Sohn
IPC分类号： H01L21/336 , H01L21/28 , H01L21/3205 , H01L21/44 , H01L21/4763 , H01L29/49
CPC分类号： H01L21/2807 , H01L29/4941
摘要： The present invention relates to a method for fabricating a gate electrode of a semiconductor device with a double hard mask capable of preventing an abnormal oxidation of a metal layer included in the gate electrode and suppressing stress generation. The method includes the steps of: forming a gate insulation layer on a substrate; forming a gate layer structure containing at least a metal layer on the gate insulation layer; forming a hard mask oxide layer on the gate layer structure at a temperature lower than an oxidation temperature of the metal layer; forming a hard mask nitride layer on the hard mask oxide layer; patterning the hard mask oxide layer and the hard mask nitride layer as a double hard mask for forming the gate electrode; and forming the gate electrode by etching the gate layer structure with use of the double hard mask as an etch mask.
摘要翻译：本发明涉及一种制造半导体器件的栅电极的方法，所述半导体器件具有能够防止包含在栅极电极中的金属层的异常氧化并抑制应力产生的双重硬掩模。该方法包括以下步骤：在衬底上形成栅极绝缘层; 在所述栅极绝缘层上形成至少含有金属层的栅极层结构; 在低于金属层的氧化温度的温度下在栅极层结构上形成硬掩模氧化物层; 在硬掩模氧化物层上形成硬掩模氮化物层; 将硬掩模氧化物层和硬掩模氮化物层图案化为用于形成栅电极的双重硬掩模; 以及通过使用双重硬掩模作为蚀刻掩模蚀刻栅极层结构来形成栅电极。

52. 发明申请

US20050097772A1 Roller and clothes drying apparatus provided with the same 有权
标题翻译：辊筒和衣物干燥设备配备相同
公开(公告)号：US20050097772A1
公开(公告)日：2005-05-12
申请号：US10911622
申请日：2004-08-05
申请人： Jung-Ho Lee
发明人： Jung-Ho Lee
IPC分类号： D06F58/02 , D06F58/04 , D06F58/06 , F16C13/04 , F26B11/02
CPC分类号： F16C13/04 , D06F58/06 , F16C2340/00
摘要： A roller capable of easily absorbing impact transmitted thereto while maintaining a desired level of abrasion resistance, and a clothes drying apparatus provided with the roller. The roller is provided with an impact absorption enhancer capable of causing the roller to be easily elastically deformable while maintaining a desired hardness of the roller. Accordingly, it is possible to absorb intensive impact transmitted to the roller while maintaining a desired abrasion resistance of the roller.
摘要翻译：能够容易地吸收传递到其上并同时保持所需耐磨性水平的冲击力的滚筒和设置有滚筒的衣物干燥装置。辊设置有能够使滚子容易弹性变形同时保持辊的所需硬度的冲击吸收增强器。因此，可以在保持辊的期望的耐磨性的同时吸收传递到辊的强烈冲击。

53. 外观设计

USD466939S1 Correction tape dispenser 失效
公开(公告)号：USD466939S1
公开(公告)日：2002-12-10
申请号：US29152726
申请日：2001-12-21
申请人： Jung-Ho Lee
设计人： Jung-Ho Lee

54. 发明授权

US06479405B2 Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method 失效
标题翻译：在半导体制造工艺中使用旋涂玻璃组合物和使用相同方法的隔离方法形成氧化硅层的方法
公开(公告)号：US06479405B2
公开(公告)日：2002-11-12
申请号：US09985615
申请日：2001-11-05
申请人： Jung-Ho Lee , Dong-Jun Lee , Dae-Won Kang , Sung-Taek Moon , Gi-Hag Lee , Jung-Sik Choi
发明人： Jung-Ho Lee , Dong-Jun Lee , Dae-Won Kang , Sung-Taek Moon , Gi-Hag Lee , Jung-Sik Choi
IPC分类号： H01L2131
CPC分类号： C23C18/1283 , C08G77/62 , C23C18/1212 , C23C18/122 , C23C18/1279 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31051 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/76229 , H01L21/823481 , H01L27/105 , H01L27/11521
摘要： A method of forming a silicon oxide layer of a semiconductor device comprising coating a spin-on glass (SOG) composition including perhydropolysilazane having a compound of the formula (SiH2NH2)n where n represents a positive integer on a semiconductor substrate having a surface discontinuity, to form a planar SOG layer; and forming a silicon oxide layer with a planar surface by implementing a first heat treatment to convert an SOG solution into oxide and a second heat treatment to densify thus obtained oxide. The silicon oxide layer of the present invention can bury a gap between gaps of VLSI having a high aspect ratio and gives the same characteristics as a CVD oxide layer. Further, the oxidation of silicon in the active region is restrained in the present invention to secure dimension stability. Also disclosed is a semiconductor device made by the method.
摘要翻译：一种形成半导体器件的氧化硅层的方法，包括在具有表面不连续性的半导体衬底上涂覆包含具有式（SiH 2 NH 2）n的化合物的全氢聚硅氮烷的旋涂玻璃（SOG）组合物，其中n表示正整数，以形成平面SOG层; 以及通过实施第一热处理以将SOG溶液转化为氧化物并进行第二热处理以致密化由此获得的氧化物，形成具有平坦表面的氧化硅层。本发明的氧化硅层可以在具有高纵横比的VLSI的间隙之间埋设间隙，并赋予与CVD氧化物层相同的特性。此外，本发明中限制了活性区域中硅的氧化以确保尺寸稳定性。还公开了通过该方法制造的半导体器件。

55. 发明授权

US6057896A Liquid crystal displays using organic insulating material for a passivation layer and/or a gate insulating layer and manufacturing methods thereof 失效
标题翻译：使用有机绝缘材料进行钝化层和/或栅极绝缘层的液晶显示器及其制造方法
公开(公告)号：US6057896A
公开(公告)日：2000-05-02
申请号：US979572
申请日：1997-11-26
申请人： Soo-Guy Rho , Jung-Ho Lee
发明人： Soo-Guy Rho , Jung-Ho Lee
IPC分类号： G02B5/00 , G02F1/1333 , G02F1/1335 , G02F1/1339 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L29/786 , H01L29/04 , H01L29/93 , H01L23/48
CPC分类号： G02F1/133345 , G02F1/136213 , G02F1/136227 , G02F1/136209 , G02F1/1368 , G02F2001/133357
摘要： A passivation layer is formed by coating a flowable insulating material on the substrate where a thin film transistor and a storage capacitor electrode, and a pixel electrode is formed on the passivation layer. A portion of the passivation layer is etched using the pixel electrode as a mask to make a groove on the thin film transistor, and then a black matrix is formed by filling an organic black photoresist in the groove. To increase the storage capacitance, a portion of the passivation layer is removed or to form a metal pattern on the storage capacitor electrode. A flowable insulating material is used as a gate insulating layer to planarize the substrate. In the case of the etch stopper type thin film transistor, a photo definable material is used as the etch stopper layer to reduce the parasitic capacitance between the gate electrode and the drain electrode.
摘要翻译：通过在基板上涂布可流动的绝缘材料形成钝化层，在钝化层上形成薄膜晶体管和存储电容器电极以及像素电极。使用像素电极作为掩模蚀刻钝化层的一部分，以在薄膜晶体管上形成沟槽，然后通过在沟槽中填充有机黑色光致抗蚀剂形成黑色矩阵。为了增加存储电容，去除钝化层的一部分或在存储电容器电极上形成金属图案。使用可流动绝缘材料作为栅极绝缘层来平坦化基板。在蚀刻停止型薄膜晶体管的情况下，使用光可定义材料作为蚀刻停止层，以减小栅电极和漏电极之间的寄生电容。

56. 发明授权

US09082910B2 Solar cell and manufacturing method thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US09082910B2
公开(公告)日：2015-07-14
申请号：US13380584
申请日：2009-10-14
申请人： Jung-Ho Lee , Jin-Young Jung , Sang-Won Jee , Han-Don Um
发明人： Jung-Ho Lee , Jin-Young Jung , Sang-Won Jee , Han-Don Um
IPC分类号： H01L31/0352 , H01L31/0236 , H01L31/028 , H01L31/068 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/0236 , H01L31/028 , H01L31/03529 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes: a substrate; a plurality of first nanostructures provided on the substrate and arranged; and a plurality of second nanostructures provided on the substrate and arranged separate from the plurality of first nanostructures wherein an average diameter of a cross section of one of the plurality of first nanostructures that is incised in a direction that is in parallel to a substrate surface of the substrate is greater than an average diameter of a cross section of one of the plurality of second nanostructures that is incised in a direction that is in parallel to a substrate surface of the substrate.
摘要翻译：太阳能电池包括：基板; 多个第一纳米结构，设置在基板上并布置; 以及多个第二纳米结构，其设置在所述基板上并且与所述多个第一纳米结构分离地布置，其中所述多个第一纳米结构中的一个的横截面在与基板表面平行的方向上切割的平均直径衬底大于在与衬底的衬底表面平行的方向上切割的多个第二纳米结构中的一个的横截面的平均直径。

57. 发明授权

US08563085B2 Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor 有权
标题翻译：前体组成，形成层的方法，形成栅极结构的方法和形成电容器的方法
公开(公告)号：US08563085B2
公开(公告)日：2013-10-22
申请号：US13035659
申请日：2011-02-25
申请人： Youn-Joung Cho , Youn-Soo Kim , Kyu-Ho Cho , Jung-Ho Lee , Jae-Hyoung Choi , Seung-Min Ryu
发明人： Youn-Joung Cho , Youn-Soo Kim , Kyu-Ho Cho , Jung-Ho Lee , Jae-Hyoung Choi , Seung-Min Ryu
IPC分类号： C23C16/00
CPC分类号： C23C16/18 , C23C16/405 , C23C16/45553 , H01L27/10852 , H01L28/40 , H01L28/91
摘要： In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.
摘要翻译：在形成层的方法中，通过使前体组合物与给电子化合物接触以将稳定的前体组合物接触到基底上来稳定包含金属和螯合金属的配体的前体组合物。将反应物引入到底物上以与稳定化的前体组合物中的金属结合。在将供电子化合物引入到基板上之后，将前体组合物引入到基板上，将稳定化的前体组合物提供到基板上。引入前体组合物之前和之后，将电子给体化合物连续引入到基质上。

58. 发明授权

US08232904B2 Folding analog-to-digital converter 有权
标题翻译：折叠模数转换器
公开(公告)号：US08232904B2
公开(公告)日：2012-07-31
申请号：US12784781
申请日：2010-05-21
申请人： Jung-Ho Lee , Jung-Eun Lee , Heung-Bae Lee
发明人： Jung-Ho Lee , Jung-Eun Lee , Heung-Bae Lee
IPC分类号： H03M1/12
CPC分类号： G11C27/024 , G11C27/026 , H03M1/141
摘要： A folding analog-to-digital converter including: a reference voltage generator, a track-and-hold circuit and a first pre-amplification circuit. The reference voltage generator generates a plurality of reference voltages. The track-and-hold circuit generates a sampling control signal having a voltage level lower than or equal to a level of a power supply voltage by maintaining an initial level of a boost capacitor voltage at a level lower than a level of a power supply voltage, and samples and holds an input voltage signal in response to the generated sampling control signal to generate a sampled signal. The first pre-amplification circuit amplifies each of voltage differences between the sampled signal and each of the plurality of reference voltages.
摘要翻译：一种折叠模数转换器，包括：参考电压发生器，跟踪保持电路和第一预放大电路。参考电压发生器产生多个参考电压。跟踪保持电路通过将升压电容器电压的初始电平维持在低于电源电压的电平的电平来产生具有低于或等于电源电压电平的电压电平的采样控制信号并且响应于所生成的采样控制信号采样和保持输入电压信号以产生采样信号。第一预放大电路放大采样信号和多个参考电压中的每一个之间的每个电压差。

59. 发明申请

US20120097231A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120097231A1
公开(公告)日：2012-04-26
申请号：US13380584
申请日：2009-10-14
申请人： Jung-Ho Lee , Jin-Young Jung , Sang-Won Jee , Han-Don Um
发明人： Jung-Ho Lee , Jin-Young Jung , Sang-Won Jee , Han-Don Um
IPC分类号： H01L31/0352 , H01L31/18 , B82Y99/00 , B82Y40/00
CPC分类号： H01L31/035281 , H01L31/0236 , H01L31/028 , H01L31/03529 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes: a substrate; a plurality of first nanostructures provided on the substrate and arranged; and a plurality of second nanostructures provided on the substrate and arranged separate from the plurality of first nanostructures wherein an average diameter of a cross section of one of the plurality of first nanostructures that is incised in a direction that is in parallel to a substrate surface of the substrate is greater than an average diameter of a cross section of one of the plurality of second nanostructures that is incised in a direction that is in parallel to a substrate surface of the substrate.
摘要翻译：太阳能电池包括：基板; 多个第一纳米结构，设置在基板上并布置; 以及多个第二纳米结构，其设置在所述基板上并且与所述多个第一纳米结构分离地布置，其中所述多个第一纳米结构中的一个的横截面在与基板表面平行的方向上切割的平均直径衬底大于在与衬底的衬底表面平行的方向上切割的多个第二纳米结构中的一个的横截面的平均直径。

60. 发明申请

US20110183527A1 Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor 有权
标题翻译：前体成分，形成层的方法，形成栅极结构的方法和形成电容器的方法
公开(公告)号：US20110183527A1
公开(公告)日：2011-07-28
申请号：US13035659
申请日：2011-02-25
申请人： Youn-Joung Cho , Youn-Soo Kin , Kyu-Ho Cho , Jung-Ho Lee , Jae-Hyoung Choi , Seung-Min Ryu
发明人： Youn-Joung Cho , Youn-Soo Kin , Kyu-Ho Cho , Jung-Ho Lee , Jae-Hyoung Choi , Seung-Min Ryu
IPC分类号： H01L21/314
CPC分类号： C23C16/18 , C23C16/405 , C23C16/45553 , H01L27/10852 , H01L28/40 , H01L28/91
摘要： In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.
摘要翻译：在形成层的方法中，通过使前体组合物与给电子化合物接触来稳定前体组合物，该组合物包含金属和与金属螯合的配体，以将稳定化的前体组合物提供到基底上。将反应物引入到底物上以与稳定化的前体组合物中的金属结合。在将供电子化合物引入到基板上之后，将前体组合物引入到基板上，将稳定化的前体组合物提供到基板上。引入前体组合物之前和之后，将电子给体化合物连续引入到基质上。

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