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51. 发明申请

US20060172506A1 Process for producing a semiconductor chip 有权
标题翻译：半导体芯片的制造方法
公开(公告)号：US20060172506A1
公开(公告)日：2006-08-03
申请号：US11314447
申请日：2005-12-20
申请人： Georg Bruderl , Volker Harle
发明人： Georg Bruderl , Volker Harle
IPC分类号： H01L21/76 , H01L21/30
CPC分类号： H01L21/76254 , H01L33/0075 , H01L33/0079 , H01L33/32 , H01L33/405
摘要： In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation, the ion implantation taking place through the functional semiconductor layer sequence (2). Then, a handle substrate (6) is applied to the functional semiconductor layer sequence (2), and a part of the growth substrate (1) which is remote from the handle substrate (6) as seen from the separating zone (4), is detached along the separating zone (4).
摘要翻译：在制造半导体芯片的工艺中，在生长衬底（1）上外延生长功能半导体层序列（2）。然后，通过离子注入在生长衬底（1）中形成平行于生长衬底（1）的主表面（8）平行的分离区（4），通过功能半导体层发生离子注入序列（2）。然后，从功能半导体层序列（2）施加手柄基板（6），从分离区域（4）观察到远离手柄基板（6）的生长基板（1）的一部分，沿分离区（4）分离。

52. 发明授权

US06527853B1 Method for producing nitride monocrystals 有权
标题翻译：氮化物单晶的生产方法
公开(公告)号：US06527853B1
公开(公告)日：2003-03-04
申请号：US09869221
申请日：2001-10-01
申请人： Volker Harle
发明人： Volker Harle
IPC分类号： C30B1900
CPC分类号： C30B7/14 , C30B7/00 , C30B7/005 , C30B9/00 , C30B17/00
摘要： The inventive method exploits the fact that in solutions or melts which contain certain organic substances, small nitride crystallites consisting of GaN or AlN are formed by thermal reaction and decomposition. A vessel containing the melt is kept at a first temperature T1. In the vessel is a substrate nucleus of he nitride to be formed, which is heated to second temperature T2 through the input of energy, where T2>T1. Epitaxial growth from the melt then takes place on the surface of the substrate nucleus. The energy input can be carried out in different ways.
摘要翻译：本发明的方法利用了在含有某些有机物的溶液或熔体中，通过热反应和分解形成由GaN或AlN组成的小的氮化物微晶。将含有熔体的容器保持在第一温度T1。在容器中是要形成的氮化物的衬底核，其通过能量的输入被加热到第二温度T2，其中T2> T1。来自熔体的外延生长发生在基底核的表面上。能量输入可以以不同的方式进行。

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