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51. 发明授权

US07492208B2 MOSFET circuit having reduced output voltage oscillations during a switch-off operation 有权
标题翻译： MOSFET电路在关断操作期间具有降低的输出电压振荡
公开(公告)号：US07492208B2
公开(公告)日：2009-02-17
申请号：US10757974
申请日：2004-01-15
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H03K17/04
CPC分类号： H01L29/7808 , H01L27/0727 , H01L29/0634 , H01L29/41766 , H01L29/7802 , H03K17/08142 , H03K17/164
摘要： The invention relates to a MOSFET circuit having reduced output voltage oscillations, in which a smaller CoolMOS transistor (T2) with a zener diode (Z1) connected upstream of its gate is located in parallel with a larger CoolMOS transistor (T1), so that, during a switch-off operation, after the larger transistor has been switched off, the smaller transistor (T2) carries a tail current on account of the zener voltage still present, which tail current attenuates output oscillations of the voltage.
摘要翻译：本发明涉及具有降低的输出电压振荡的MOSFET电路，其中具有连接在其栅极上游的齐纳二极管（Z1）的较小的CoolMOS晶体管（T2）与较大的CoolMOS晶体管（T1）并联，在关断操作期间，在较大的晶体管已经断开之后，较小的晶体管（T2）由于仍然存在齐纳电压而带有尾电流，该尾电流衰减了电压的输出振荡。

52. 发明申请

US20070018716A1 Circuit arrangement having a transistor component and a freewheeling element 有权
标题翻译：具有晶体管部件和续流元件的电路装置
公开(公告)号：US20070018716A1
公开(公告)日：2007-01-25
申请号：US11480337
申请日：2006-06-30
申请人： Jenoe Tihanyi , Nada Tihanyi
发明人： Jenoe Tihanyi , Nada Tihanyi
IPC分类号： H01L25/00
CPC分类号： H02M3/158 , H01L27/0629 , H01L27/0811 , H01L27/0922 , H01L2924/0002 , H02M2003/1555 , H01L2924/00
摘要： A circuit arrangement configured to drive a load is disclosed herein. The circuit arrangement comprises a first and a second supply potential terminal for application of a first supply potential and a second supply potential. A load terminal is provided between the first and second supply potential for connection of the load. The circuit arrangement further comprises a first transistor component of a first conduction type. The first transistor component includes a load path and a control terminal, with the load path connected between the first supply potential terminal and the load terminal. The circuit arrangement also comprises a freewheeling element. The freewheeling element is provided as a second transistor of a second conduction type connected up as a diode. The second transistor is connected between the load terminal and the second supply potential terminal. The first transistor component and the freewheeling element are integrated in a common semiconductor body.
摘要翻译：这里公开了构造成驱动负载的电路装置。电路装置包括用于施加第一电源电位和第二电源电位的第一和第二电源端子。负载端子设置在用于连接负载的第一和第二供电电位之间。电路装置还包括第一导电类型的第一晶体管组件。第一晶体管部件包括负载路径和控制端子，负载路径连接在第一供电电位端子和负载端子之间。电路装置还包括续流元件。续流元件被提供为作为二极管连接的第二导电类型的第二晶体管。第二晶体管连接在负载端子和第二电源端子之间。第一晶体管元件和续流元件集成在共同的半导体本体中。

53. 发明授权

US07148736B1 Power switch 有权
标题翻译：开关;电源开关
公开(公告)号：US07148736B1
公开(公告)日：2006-12-12
申请号：US09590041
申请日：2000-06-08
申请人： Jenoe Tihanyi , Peter Sommer
发明人： Jenoe Tihanyi , Peter Sommer
IPC分类号： H03K17/60
CPC分类号： H03K17/102 , H03K17/08142 , H03K17/107
摘要： The power switch has a first transistor, a limiting transistor, and an auxiliary transistor. The first transistor has a load path and a control electrode. The limiting transistor, which limits a voltage drop across the load path of the first transistor, has a load path connected in series with the load path of the first transistor, and a control electrode. The auxiliary transistor has a load path connected between the control electrode of the limiting transistor and a reference node, and having a control electrode connected between the first transistor and the limiting transistor.
摘要翻译：电源开关具有第一晶体管，限流晶体管和辅助晶体管。第一晶体管具有负载路径和控制电极。限制晶体管限制第一晶体管的负载路径上的电压降，具有与第一晶体管的负载路径串联连接的负载路径和控制电极。辅助晶体管具有连接在限制晶体管的控制电极和参考节点之间的负载路径，并且具有连接在第一晶体管和限制晶体管之间的控制电极。

54. 发明申请

US20050116298A1 MOS field effect transistor with small miller capacitance 审中-公开
标题翻译： MOS场效应晶体管具有小的磨机电容
公开(公告)号：US20050116298A1
公开(公告)日：2005-06-02
申请号：US10981946
申请日：2004-11-05
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L21/28 , H01L21/336 , H01L29/06 , H01L29/423 , H01L29/49 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7828 , H01L21/2815 , H01L29/0653 , H01L29/42368 , H01L29/42376 , H01L29/4925 , H01L29/4933 , H01L29/66712 , H01L29/7802
摘要： A MOS field effect transistor having a vertical source, drain and gate structure, the gate electrode of which has a dimensioning that determines the gate-drain capacitance (Miller capacitance) and provides a reduced capacitance.
摘要翻译：具有垂直源极，漏极和栅极结构的MOS场效应晶体管，其栅电极具有确定栅 - 漏电容（米勒电容）的尺寸并提供减小的电容。

55. 发明申请

US20050093062A1 SOI component with increased dielectric strength and improved heat dissipation 有权
标题翻译： SOI元件具有增加的介电强度和改善的散热
公开(公告)号：US20050093062A1
公开(公告)日：2005-05-05
申请号：US10943491
申请日：2004-09-17
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L21/84 , H01L27/12 , H01L29/06 , H01L29/739 , H01L29/78 , H01L29/786 , H01L29/861 , H01L29/04
CPC分类号： H01L29/7824 , H01L21/84 , H01L27/1203 , H01L29/0634 , H01L29/7393 , H01L29/78639 , H01L29/8611
摘要： The present invention relates to a semiconductor component arrangement having the following features: a semiconductor substrate (10) of a first conduction type, an insulation layer (20) arranged on the substrate (10), a semiconductor layer (30) arranged on the insulation layer (20), there being formed in said semiconductor layer a semiconductor component with at least a first semiconductor zone (40) of a first conduction type, a second semiconductor zone (70) of a second conduction type, which adjoins the first semiconductor zone (40), and a third semiconductor zone (80), which is doped more heavily than the second semiconductor zone, at a distance from the first semiconductor zone (40), featuring at least one fourth semiconductor zone (90) of the second conduction type, which has a first section (91) formed in the second semiconductor zone (70) and a second section (92) formed in the underlying substrate (10), which sections are electrically conductively connected to one another through the insulation layer (20).
摘要翻译：本发明涉及具有以下特征的半导体元件布置：第一导电类型的半导体衬底（10），布置在衬底（10）上的绝缘层（20），布置在绝缘体上的半导体层（30）在所述半导体层中形成有至少第一导电类型的第一半导体区域（40）和第二导电类型的第二半导体区域（70）的第二半导体区域（70）的第二半导体层（20）（40）的第四半导体区（90）和与所述第二半导体区（40）相距一定距离的第三半导体区（80），所述第三半导体区（80）具有至少一个第二半导体区型，其具有形成在第二半导体区域（70）中的第一部分（91）和形成在下面的基板（10）中的第二部分（92），这些部分是导电的通过绝缘层（20）彼此连接。

56. 发明授权

US06864535B2 Controllable semiconductor switching element that blocks in both directions 有权
标题翻译：可控半导体开关元件，阻止两个方向
公开(公告)号：US06864535B2
公开(公告)日：2005-03-08
申请号：US10164178
申请日：2002-06-06
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L21/336 , H01L29/04 , H01L29/08 , H01L29/10 , H01L29/739 , H01L29/78 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/7802 , H01L29/04 , H01L29/086 , H01L29/1033 , H01L29/1079 , H01L29/1095 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/78 , H01L29/7813
摘要： The controllable semiconductor switching element blocks in both directions. The semiconductor switching element is formed with a first conduction region and a second conduction region of a first type of conductivity, a blocking region of a second type of conductivity which is disposed between the first and second conducting regions, and a control electrode which is arranged opposite the blocking region and insulated from it. A recombination region is configured in the blocking region and is comprised of a material that promotes a recombination of charge carriers of the first and second type of conductivity.
摘要翻译：可控半导体开关元件在两个方向上阻塞。半导体开关元件形成有第一导电区域和第一导电类型的第二导电区域，设置在第一和第二导电区域之间的第二导电类型的阻挡区域和布置在第一导电区域中的控制电极与阻挡区域相对并与之隔绝。复合区域被配置在阻挡区域中，并且由促进第一和第二导电类型的载流子重组的材料构成。

57. 发明授权

US06803629B2 Vertical field-effect transistor with compensation zones and terminals at one side of a semiconductor body 有权
标题翻译：具有补偿区域的垂直场效应晶体管和半导体主体一侧的端子
公开(公告)号：US06803629B2
公开(公告)日：2004-10-12
申请号：US10033122
申请日：2001-10-22
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L2976
CPC分类号： H01L29/41741 , H01L29/0634 , H01L29/402 , H01L29/7809
摘要： A controllable field-effect semiconductor component has a semiconductor body including a first surface, a first layer of a first conduction type, and a second layer of the first conduction type lying above the first layer. The semiconductor component also has a first terminal zone that can be contact-connected at the first surface of the semiconductor body. The first terminal zone is formed in the second layer. A channel zone of a second conduction type surrounds the first terminal zone. Compensation zones of the second conduction type that are formed in the second layer are provided. Additionally, the semiconductor component has a second terminal zone of the first conduction type that can be contact-connected at the first surface of the semiconductor body. The second terminal zone is formed in the second layer.
摘要翻译：可控场效应半导体部件具有包括第一表面，第一导电类型的第一层和位于第一层上方的第一导电类型的第二层的半导体本体。半导体部件还具有可在半导体本体的第一表面处接触连接的第一端子区。第一端区形成在第二层中。第二导电类型的沟道区围绕第一端子区。提供形成在第二层中的第二导电类型的补偿区。此外，半导体部件具有可在半导体本体的第一表面处接触连接的第一导电类型的第二端子区。第二端区形成在第二层中。

58. 发明授权

US06777726B2 MOSFET source, drain and gate regions in a trench between a semiconductor pillar and filling insulation 失效
标题翻译： MOSFET源极，漏极和栅极区域在半导体柱和填充绝缘体之间的沟槽中
公开(公告)号：US06777726B2
公开(公告)日：2004-08-17
申请号：US10213414
申请日：2002-08-05
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H10L27148
CPC分类号： H01L29/4238 , H01L27/092 , H01L29/41775 , H01L29/41783 , H01L29/66621 , H01L29/66787
摘要： In a metal oxide semiconductor (MOS) field effect transistor configuration, a source, a drain and a gate are embedded between a semiconductor pillar that extends away from a semiconductor body and forms a body region. A filling insulator surrounds the semiconductor pillar and is situated on the semiconductor body for insulating the MOSFET.
摘要翻译：在金属氧化物半导体（MOS）场效应晶体管构造中，源极，漏极和栅极嵌入在远离半导体本体延伸并形成体区的半导体柱之间。填充绝缘体围绕半导体柱并且位于半导体本体上用于绝缘MOSFET。

59. 发明授权

US06639388B2 Free wheeling buck regulator with floating body zone switch 有权
标题翻译：自由轮降压调节器带浮体开关
公开(公告)号：US06639388B2
公开(公告)日：2003-10-28
申请号：US10272343
申请日：2002-10-15
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： G05F1613
CPC分类号： H02M3/158
摘要： A voltage transformer includes a pair of input terminals for applying an input voltage, a series circuit connected in parallel to the pair of input terminals of a first switch, and a low pass filter. The low pass filter has output terminals for connecting a load. A freewheeling circuit is connected in parallel to the low pass filter. The freewheeling circuit has a second switch, which is configured as a MOS transistor, with a gate terminal and a load path formed between a first load path terminal and a second load path terminal. The MOS transistor has a body zone mounted in a floated manner or connected to a source zone by an ohmic resistor.
摘要翻译：电压互感器包括用于施加输入电压的一对输入端子，并联连接到第一开关的一对输入端子的串联电路和低通滤波器。低通滤波器具有用于连接负载的输出端子。续流电路与低通滤波器并联连接。续流电路具有构造为MOS晶体管的第二开关，栅极端子和形成在第一负载路径端子和第二负载路径端子之间的负载路径。 MOS晶体管具有以漂浮方式安装或通过欧姆电阻器连接到源极区的体区。

60. 发明授权

US06617640B2 Field-effect-controllable semiconductor configuration with a laterally extending channel zone 有权
标题翻译：具有横向延伸通道区的场效应可控半导体构造
公开(公告)号：US06617640B2
公开(公告)日：2003-09-09
申请号：US09815657
申请日：2001-03-23
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L2976
CPC分类号： H01L29/4236 , H01L29/41741 , H01L29/41766 , H01L29/7827 , H01L29/7828 , H01L29/7838
摘要： A semiconductor configuration includes a semiconductor body with a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, and at least one control electrode surrounded by an insulation layer. The channel zone is formed between the first connection zone and the second connection zone. The at least one control electrode extends, adjacent to the channel zone, from the first connection zone to the second connection zone. The first connection zone, the second connection zone and the at least one control electrode extend in the vertical direction such that, when a voltage is applied between the first and second connection zones, a current path along the lateral direction is formed in the channel zone.
摘要翻译：半导体结构包括具有第一导电类型的第一连接区域，第一导电类型的第二连接区域，第一导电类型的沟道区域和被绝缘层包围的至少一个控制电极的半导体本体。通道区形成在第一连接区和第二连接区之间。所述至少一个控制电极从所述第一连接区延伸到所述第二连接区。第一连接区域，第二连接区域和至少一个控制电极在垂直方向上延伸，使得当在第一和第二连接区域之间施加电压时，在沟道区域中形成沿着横向方向的电流路径。

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