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51. 发明授权

US5329207A Field emission structures produced on macro-grain polysilicon substrates 失效
标题翻译：在大颗粒多晶硅基板上产生的场致发射结构
公开(公告)号：US5329207A
公开(公告)日：1994-07-12
申请号：US883629
申请日：1992-05-13
申请人： David A. Cathey , J. Brett Rolfson , Tyler A. Lowrey , Trung T. Doan
发明人： David A. Cathey , J. Brett Rolfson , Tyler A. Lowrey , Trung T. Doan
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30407
摘要： A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.
摘要翻译：一种用于平板显示器的底板，包括相对厚的半导体衬底，其中半导体衬底是通过离子注入而非晶化或通过重结晶重新形成的宏晶多晶衬底，以掩盖晶界，此后可制造冗余电路，进一步提高产品产量。

52. 发明授权

US5314578A Process for etching a multi-layer substrate 失效
标题翻译：蚀刻多层基板的方法
公开(公告)号：US5314578A
公开(公告)日：1994-05-24
申请号：US904463
申请日：1992-06-25
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31116 , Y10S438/97
摘要： A carbon-containing, chemical etchant protective patterned layer is formed on a multi-layer substrate including a silicon dioxide layer formed on an underlying silicon or metal silicide layer by providing a predetermined pattern defining a plurality of openings in the carbon-containing, chemical etchant protective patterned layer. Next, the plurality of exposed areas of the major surface of the silicon dioxide structural layer are selectively etched with a substantially carbon-free chemical etchant system. These materials form a polyhalocarbon material in the presence of a carbon-containing material. Thus, since the chemical etchant protective patterned layer is carbon-containing, a localized polyhalocarbon deposition can be affected, at high selectivity conditions, by adding the carbon-free chemical etchant system in the presence of the protective patterned layer. More specifically, the hydrogen-containing material reacts with the carbon-free, halogen-containing material and the carbon-containing, chemical etchant protective patterned layer to selectively form in situ, at the point of interaction thereof, a polyhalocarbon protective coating layer on the silicon dioxide structural layer.
摘要翻译：通过在含碳化学蚀刻剂中提供限定多个开口的预定图案，在包含形成在下面的硅或金属硅化物层上的二氧化硅层的多层基底上形成含碳化学蚀刻剂保护性图案层保护图案层。接下来，用基本上不含碳的化学蚀刻剂系统选择性地蚀刻二氧化硅结构层的主表面的多个暴露区域。这些材料在含碳材料的存在下形成多卤碳材料。因此，由于化学蚀刻剂保护性图案层是含碳的，因此在高选择性条件下，通过在存在保护性图案化层的情况下添加无碳化学蚀刻剂体系，可以影响局部多卤碳沉积。更具体地说，含氢材料与无碳，含卤素的材料和含碳化学蚀刻剂保护性图案层反应，在其相互作用点上选择性地形成在其上的多卤素保护涂层二氧化硅结构层。

53. 发明授权

US5281500A Method of preventing null formation in phase shifted photomasks 失效
标题翻译：防止相移光掩模中无效形成的方法
公开(公告)号：US5281500A
公开(公告)日：1994-01-25
申请号：US754893
申请日：1991-09-04
申请人： David A. Cathey , Brett Rolfson
发明人： David A. Cathey , Brett Rolfson
IPC分类号： G03F1/30 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30
摘要： A method of preventing null formation is performed on a phase shifted photomask including a clear quartz substrate, dark chrome feature features, and alternating clear phase shifters raised from the substrate. The phase shifter features are terminated in a transmissive, optically clear edge. To prevent null formation and consequent formation of stringers on the surface of the integrated circuit, the substantially vertical edge of the optically clear end of the phase shifter is tapered. The slope at any point along the tapered edge between the photomask substrate and the phase shifter is set to an angle, typically less than forty-five degrees, shallow enough that the point spread function does not produce an image. The point spread function of the imaging system spreads out the null, which is therefore not printed into the photoresist layer on the integrated circuit. The tapered edge of the phase shifter is created by either discrete or continuous etching methods. Both methods create the phase shifter and tapered edges simultaneously and are compatible with photomasks having either additive or subtractive type phase shifters.
摘要翻译：对包括透明石英基板，黑铬特征特征的相移光掩模以及从基板凸起的交替的透明移相器执行防止空白形成的方法。移相器的特征端接在透射光学透明的边缘。为了防止在集成电路的表面上的空隙形成和随之形成桁条，移相器的光学透明端的基本上垂直的边缘是锥形的。沿着光掩模基板和移相器之间的锥形边缘的任何点处的斜率被设定为通常小于四十五度的角度，足以使点扩散函数不产生图像。成像系统的点扩散功能扩展为零，因此不会印刷到集成电路上的光致抗蚀剂层中。移相器的锥形边缘通过离散或连续蚀刻方法产生。两种方法同时产生移相器和锥形边缘，并且与具有加法或减法型移相器的光掩模兼容。

54. 发明授权

US5240871A Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor 失效
标题翻译：有腐蚀性的存储接触电容器和形成存储接触电容器的方法
公开(公告)号：US5240871A
公开(公告)日：1993-08-31
申请号：US755985
申请日：1991-09-06
申请人： Trung T. Doan , David A. Cathey
发明人： Trung T. Doan , David A. Cathey
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/88
摘要： A dynamic random access memory (DRAM) cell having a corrugated storage contact capacitor for enhancing capacitance. A noncritical alignment is effected between the substrate contact area and the lower capacitor plate by using an etch stop layer to protect wordlines, field-effect transistors (FETs), and field oxide regions during the patterning and etching of storage capacitor regions. The corrugated storage contact capacitor is fabricated by depositing alternating layers of dielectric materials having either substantially different etch rates or wet etch selectivity one toward the other. The layers are isotropically etched and a cavity having corrugated sidewalls is provided. A doped poly layer is deposited to function as the storage-node capacitor plate. The deposition of a dielectric layer is followed by an insitu-doped poly layer deposited to form the upper capacitor plate. The capacitor thus formed is typified as having the storage-node capacitor plate self-aligned to the contact area of the substrate.
摘要翻译：一种具有用于增强电容的瓦楞存储接触电容器的动态随机存取存储器（DRAM）单元。在存储电容器区域的图案化和蚀刻期间，通过使用蚀刻停止层来保护字线，场效应晶体管（FET）和场氧化物区域，在衬底接触区域和下电容器板之间实现非临界对准。波纹存储接触电容器通过将具有基本上不同的蚀刻速率或湿蚀刻选择性的交替层的介电材料沉积到另一个来制造。各层被各向同性地蚀刻并且提供具有波纹侧壁的空腔。沉积掺杂多晶硅层作为存储节点电容器板。介电层的沉积之后是沉积以形成上电容器板的原位掺杂多晶硅层。由此形成的电容器的特征在于具有与衬底的接触区域自对准的存储节点电容器板。

55. 发明授权

US5082524A Addition of silicon tetrabromide to halogenated plasmas as a technique for minimizing photoresist deterioration during the etching of metal layers 失效
标题翻译：将四溴化硅添加到卤化等离子体中，作为在金属层的蚀刻期间最小化光致抗蚀剂劣化的技术
公开(公告)号：US5082524A
公开(公告)日：1992-01-21
申请号：US559959
申请日：1990-07-30
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： C23F4/00 , H01L21/321 , H01L21/3213
CPC分类号： H01L21/32105 , C23F4/00 , H01L21/32136
摘要： An enhanced halogenated plasma for ion-assisted plasma etches to which silicon tetrabromide has been added to retard erosion, flowing and reticulation of photoresist, particularly during an etch of an aluminum or tungsten metal layer. The added resistance to erosion, flowing and reticulation is greater than that achieved through the addition of silicon tetrachloride to the same plasma. It is postulated that a silicon-containing layer is deposited on horizontal and vertical surfaces of photoresist at a faster rate than that possible for silicon tetrachloride. As with silicon tetrachloride, resist loss still occurs, but at a much reduced rate, with loss on the upper surfaces of the photoresist segments (these surfaces being perpendicular to the RF field of the reactor) occurring at a higher rate than loss on vertical surfaces (these surfaces being parallel to the RF field of the reactor).
摘要翻译：用于离子辅助等离子体蚀刻的增强的卤化等离子体，其中已加入四溴化硅以延缓光刻胶的侵蚀，流动和网状化，特别是在蚀刻铝或钨金属层期间。对侵蚀，流动和网状结构的增加的抵抗力大于通过向同一等离子体中加入四氯化硅所达到的抵抗力。假设含硅层以比四氯化硅可能的速度更快的速率沉积在光致抗蚀剂的水平和垂直表面上。与四氯化硅一样，仍然发生抗蚀剂损失，但是以大大降低的速率，在光致抗蚀剂段的上表面（这些表面垂直于反应器的RF场）的损失以比在垂直表面上的损失更高的速率发生（这些表面平行于反应器的RF场）。

56. 发明授权

US5049520A Method of partially eliminating the bird's beak effect without adding any process steps 失效
标题翻译：在不添加任何工艺步骤的情况下部分消除鸟的喙效应的方法
公开(公告)号：US5049520A
公开(公告)日：1991-09-17
申请号：US534588
申请日：1990-06-06
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： H01L21/311 , H01L21/74 , H01L21/762 , H01L21/8242
CPC分类号： H01L27/10852 , H01L21/31144 , H01L21/743 , H01L21/76202 , Y10S148/106 , Y10S148/117
摘要： A method of partially eliminating the field oxide bird's beak over a storage cell and slightly enlarging the storage cell active area without adding any process steps is described. A photomask is used during a buried contact etch to reduce the field oxide bird's beak both vertically and horizonally. The storage cell active area is further enlarged during a first polysilicon etch step without adding process steps. At that point, the wafer is completed by existing techniques.
摘要翻译：描述了一种在存储单元上部分地消除场氧化物鸟的喙并且稍微扩大存储单元活动区域而不添加任何处理步骤的方法。在掩埋接触蚀刻期间使用光掩模以垂直和水平地减小场氧化物鸟的喙。在第一多晶硅蚀刻步骤期间，存储单元有源区进一步放大，而不添加工艺步骤。在这一点上，晶圆是通过现有技术完成的。

57. 发明授权

US07462088B2 Method for making large-area FED apparatus 失效
标题翻译：制造大面积FED设备的方法
公开(公告)号：US07462088B2
公开(公告)日：2008-12-09
申请号：US11405112
申请日：2006-04-17
申请人： David A. Cathey , Jimmy J. Browning
发明人： David A. Cathey , Jimmy J. Browning
IPC分类号： H01J9/00 , H01J9/02
CPC分类号： H01J31/123 , H01J9/025 , H01J9/185 , H01J9/242 , H01J29/028 , H01J29/864 , H01J31/127 , H01J2329/863
摘要： A method is provided for forming and associating a lower section of a large-area field emission device (“FED”) that is sealed under a predetermined level of vacuum pressure with an upper section of a large-area FED. The upper section of the FED includes a faceplate. A first conductive layer is disposed on a surface of the faceplate. A matrix member is disposed on a surface of the first conductive layer, and cathodoluminescent material is disposed on the first conductive layer in areas not covered by the matrix member. The method includes disposing a plurality of spacers between the upper and lower sections of the FED to provide a predetermined separation between the upper and lower sections, with the spacers having cross-sectional shapes commensurate with stresses exerted on the spacers and/or heights commensurate with stresses exerted on the spacers. Resulting FED structures are disclosed.
摘要翻译：提供一种用于形成和关联在预定真空压力下密封的大面积场致发射装置（“FED”）的下部与大面积FED的上部的方法。 FED的上部包括面板。第一导电层设置在面板的表面上。矩阵构件设置在第一导电层的表面上，阴极发光材料设置在未被矩阵构件覆盖的区域中的第一导电层上。该方法包括在FED的上部和下部之间设置多个间隔件以在上部和下部之间提供预定的间隔，其中间隔件具有与施加在间隔件上的应力相当的横截面形状和/或与施加在间隔件上的应力。公开了所得的FED结构。

58. 发明授权

US07417549B2 Automated antenna trim for transmitting and receiving semiconductor devices 失效
标题翻译：用于发射和接收半导体器件的自动天线装饰
公开(公告)号：US07417549B2
公开(公告)日：2008-08-26
申请号：US10642910
申请日：2003-08-18
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： G08B13/14 , H01Q9/16 , H01Q7/00
CPC分类号： H01Q1/2208 , G06K19/0723 , G06K19/0726 , G06K19/07749 , H01Q1/2225 , H01Q9/30
摘要： A radio frequency communication device and method for tuning an antenna attached thereto are disclosed. A radio frequency communication device is disclosed comprising internal circuitry and an antenna having a plurality of antenna segments associated therewith. Each antenna segment is associated with the antenna in either series or parallel relation through at least one of a fuse and an antifuse. In testing and tuning, a comparison is made to indicate whether the antenna is too short or too long. If the antenna is too short, an antenna segment may be attached to the antenna by initiating an antifuse. If the antenna is too long, an antenna segment may be detached from the antenna by blowing a fuse. If it is indeterminate whether the antenna is too short or too long, an antenna segment may be either attached or detached, the test repeated, and the results of the repeated test compared with the prior test to determine whether the correct action was taken.
摘要翻译：公开了一种用于调谐附着于其上的天线的射频通信装置和方法。公开了一种射频通信设备，其包括具有与其相关联的多个天线段的内部电路和天线。每个天线段通过熔丝和反熔丝中的至少一个与串联或并联的天线相关联。在测试和调谐中，比较天线是否太短或太长。如果天线太短，则可以通过启动反熔丝将天线段连接到天线。如果天线太长，则可以通过吹保险丝从天线分离天线段。如果不确定天线是否太短或太长，则可以将天线段连接或分离，重复测试，并将重复测试的结果与先前测试相比较，以确定是否采取正确的操作。

59. 发明授权

US07098587B2 Preventing junction leakage in field emission devices 有权
标题翻译：防止场致发射装置的结漏电
公开(公告)号：US07098587B2
公开(公告)日：2006-08-29
申请号：US10400732
申请日：2003-03-27
申请人： James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
发明人： James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
IPC分类号： H01J1/62 , H01J63/04 , H01J1/02 , H01J5/50 , G09G3/10
CPC分类号： H01J3/022 , H01J9/241 , H01J29/04 , H01J29/06 , H01J29/89 , H01J31/127 , H01J2201/319
摘要： An apparatus and a method for stabilizing the threshold voltage in an active matrix field emission device are disclosed. The method includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.
摘要翻译：公开了用于稳定有源矩阵场致发射器件中的阈值电压的装置和方法。该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成辐射阻挡元件。

60. 发明授权

US07033238B2 Method for making large-area FED apparatus 失效
标题翻译：制造大面积FED设备的方法
公开(公告)号：US07033238B2
公开(公告)日：2006-04-25
申请号：US10262747
申请日：2002-10-02
申请人： David A. Cathey , Jimmy J. Browning
发明人： David A. Cathey , Jimmy J. Browning
IPC分类号： H01J9/00 , H01J9/02
CPC分类号： H01J31/123 , H01J9/025 , H01J9/185 , H01J9/242 , H01J29/028 , H01J29/864 , H01J31/127 , H01J2329/863
摘要： A method is provided for forming and associating a lower section of a large-area field emission device (“FED”) that is sealed under a predetermined level of vacuum pressure with an upper section of a large-area FED. The upper section of the FED includes a faceplate. A first conductive layer is disposed on a surface of the faceplate. A matrix member is disposed on a surface of the first conductive layer, and cathodoluminescent material is disposed on the first conductive layer in areas not covered by the matrix member. The method includes disposing a plurality of spacers between the upper and lower sections of the FED to provide a predetermined separation between the upper and lower sections, with the spacers having cross-sectional shapes commensurate with stresses exerted on the spacers and/or heights commensurate with stresses exerted on the spacers. Resulting FED structures are disclosed.
摘要翻译：提供一种用于形成和关联在预定真空压力下密封的大面积场致发射装置（“FED”）的下部与大面积FED的上部的方法。 FED的上部包括面板。第一导电层设置在面板的表面上。矩阵构件设置在第一导电层的表面上，阴极发光材料设置在未被矩阵构件覆盖的区域中的第一导电层上。该方法包括在FED的上部和下部之间设置多个间隔件以在上部和下部之间提供预定的间隔，其中间隔件具有与施加在间隔件上的应力相当的横截面形状和/或与施加在间隔件上的应力。公开了所得的FED结构。

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